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Winbond Electronics Corporation W632GG8NB-15
- Part No.:
- W632GG8NB-15
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GG8NB-15.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,815
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Product details
Overview
W632GG8NB-15 from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 CL/tRCD/tRP), with 1.5 V supply, SSTL_15 interface, and VFBGA-78 (8 mm × 10.5 mm) package. It supports programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for embedded computing and industrial control memory subsystems.
For engineers reviewing the W632GG8NB-15 datasheet, W632GG8NB-15 pinout, W632GG8NB-15 application, or W632GG8NB-15 equivalent, this page delivers verified timing parameters, ball configuration, ODT behavior, power-down modes, and JEDEC-compliant DDR3-1333 operation under 0°C to 95°C case temperature.
Technical Context
The W632GG8NB-15 implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and interleaved burst operations. Its DLL-aligned DQS-DQ timing ensures precise source-synchronous data capture, while posted CAS with additive latency (AL = 0, CL−1, CL−2) improves command bus efficiency.
It supports full DDR3 features including dynamic ODT (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, write leveling, partial array self-refresh (PASR), and auto self-refresh (ASR) - all configurable via mode registers MR0–MR3 and controlled by differential CK/CK# and bidirectional DQS/DQS# signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits |
| Data Rate | DDR3-1333 (667 MHz clock, 1333 MT/s), CL = 9, tRCD = tRP = 9 cycles |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - matches standard DDR3 LVTTL/SSTL_15 logic levels |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C - commercial-grade thermal range per JEDEC JESD209-3 |
| Burst Length | BL8 (fixed) and BC4 (on-the-fly selectable) - enables flexible read/write granularity |
| CAS Write Latency | CWL = 5, 6, or 7 - sets write-to-strobe alignment per frequency bin |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - requires doubled refresh rate above 85°C |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and window-type ball layout optimized for signal integrity in high-speed DDR3 layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address latched on rising CK edge; A12–A14 used for mode register selection |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; sampled with ACT/READ/WRITE commands |
| CK, CK# | Differential Clock | Edge-triggered command/address sampling at crosspoint; defines all timing windows |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; referenced to DQS/DQS# for source-synchronous timing |
| DQS, DQS# | Differential Strobe | Edge-aligned with read data, center-aligned with write data; DLL-aligned to CK |
| DM | Data Mask | Per-byte write mask active on rising DQS edge; suppresses masked write data |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and clears internal state |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., RAS# + CAS# + WE# = PRECHARGE) |
| CKE | Clock Enable | Gates internal clocks; low enters power-down mode, high resumes operation |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | CWL = 5–7 selected per operating frequency - ensures optimal write strobe-to-data alignment at DDR3-1333 |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω ±1% resistor - maintains output driver and ODT impedance accuracy over voltage/temperature |
| Dynamic ODT (Rtt_WR) | Termination enabled only during WRITE bursts - reduces noise and improves signal integrity without affecting read paths |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS - enables system-level timing margin verification and write leveling calibration |
| Partial Array Self-Refresh (PASR) | Refresh only selected banks - cuts IDD6 current up to 40% in partial-memory-active systems |
| Posted CAS with AL | AL = 0, CL−1, or CL−2 - decouples command issuance from data availability, increasing bus utilization in burst-heavy workloads |
Applications
| Industrial PLC Memory Buffer | Network Router Packet Buffer |
|---|---|
Use Scenario: Real-time I/O scanning and ladder logic execution in programmable logic controllers requiring deterministic memory access latency. IC Role / Device Role / Timing Role: Primary working memory storing program code, data tables, and process variables; operates in synchronous burst mode with tRCD = 9 ns and tRP = 9 ns. Use Value: DDR3-1333 speed and 8-bank concurrency support simultaneous instruction fetch and data logging without arbitration stalls. | Use Scenario: Temporary storage of packet headers and payload fragments in Layer 3 forwarding engines handling 1–10 Gbps traffic. IC Role / Device Role / Timing Role: High-throughput packet buffer interfaced to network processor via 8-bit DDR3 bus; uses BL8 reads/writes with DM masking for partial writes. Use Value: Dynamic ODT and write leveling ensure signal integrity across 10+ inch PCB traces at 667 MHz clock, minimizing bit errors in burst transfers. |
| Medical Imaging Data Cache | Automotive ADAS Preprocessing Buffer |
Use Scenario: Intermediate frame storage between image sensor interface and FPGA-based reconstruction pipeline in portable ultrasound devices. IC Role / Device Role / Timing Role: Low-latency, low-power cache holding raw scan-line data; leverages PASR to reduce self-refresh current during idle periods between acquisitions. Use Value: 0°C to 95°C operation and ASR support meet medical thermal requirements while maintaining 15 mA IDD6 in normal self-refresh. | Use Scenario: Buffering radar point cloud data from 77 GHz sensors before fusion and object tracking in autonomous driving ECUs. IC Role / Device Role / Timing Role: Burst-capable memory supporting rapid read-modify-write sequences for histogram updates and clustering algorithms. Use Value: Programmable CL/CWL and tAA = 13.5 ns guarantee consistent 9-cycle access timing across automotive temperature gradients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same density (2 Gb), VFBGA-78, DDR3-1600 (11-11-11), 1.35 V DDR3L compatible | Higher speed grade; requires tighter layout control and lower VDD tolerance | Select when system clock exceeds 667 MHz or DDR3L voltage scaling is required |
| IS43TR16256B-15KBL | 16-bit bus (x16), same DDR3-1333 speed, TSOP-84 package, higher IDD0/IDD1 current | Wider data path but larger footprint; no VFBGA option for space-constrained designs | Select when board layout allows TSOP and 16-bit interface simplifies controller routing |
Compared with MT41K256M8DA-125:A and IS43TR16256B-15KBL, the W632GG8NB-15 offers optimal balance of commercial-temperature DDR3-1333 performance, compact VFBGA-78 packaging, and proven JEDEC compliance - making it ideal for cost-sensitive, thermally stable embedded systems where 8-bit bus width and 1.5 V operation are design constraints.
Availability
W632GG8NB-15 is available at Aetrix Electronics and suitable for industrial automation, networking infrastructure, and medical electronics requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3 memory with commercial-temperature operation.
Supply support for W632GG8NB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GG8NB series belongs to Winbond's DDR3 SDRAM product line, designed specifically for cost-effective, high-reliability embedded systems needing JEDEC-standard memory with extended temperature support and robust signal integrity features.
FAQ
What is the maximum clock frequency supported by the W632GG8NB-15?
The W632GG8NB-15 supports a maximum clock frequency of 667 MHz, delivering a data rate of 1333 MT/s (DDR3-1333). This is confirmed by its speed bin designation "-15", corresponding to CL-tRCD-tRP = 9-9-9 timing and fCKMAX = 667 MHz per JEDEC JESD209-3. The W632GG8NB-15 must be operated within this limit to meet all AC timing specifications, including tAA = 13.5 ns minimum and tRC = 49.5 ns minimum.
Does the W632GG8NB-15 support on-die termination (ODT), and how is it configured?
Yes, the W632GG8NB-15 supports programmable on-die termination (ODT) for DQ, DQS, and DM lines via mode register MR1 and MR2. ODT values (RTT_NOM, RTT_WR) are set using ODT pins or mode register bits, with supported impedances including 75 Ω, 150 Ω, and 50 Ω depending on configuration. Dynamic ODT (Rtt_WR) activates automatically during WRITE bursts, improving signal integrity without requiring external resistors - a key feature confirmed in Section 9.19 of the W632GG8NB-15 datasheet.
What package type and ball count does the W632GG8NB-15 use?
The W632GG8NB-15 uses a VFBGA-78 package: a 8 mm × 10.5 mm, 1.0 mm thick, lead-free, RoHS-compliant window-type ball grid array with 78 solder balls arranged in a 9×9 grid (with corner balls omitted). Ball configuration and signal mapping are fully documented in Sections 6 and 7 of the official datasheet, confirming compatibility with standard DDR3 layout guidelines and IPC-7351B footprint standards.
Can the W632GG8NB-15 operate outside the 0°C to 95°C case temperature range?
No - the W632GG8NB-15 is rated strictly for 0°C ≤ TCASE ≤ 95°C. Unlike its -15I and -15J variants, the "-15" suffix denotes commercial temperature grade only. Operation beyond 95°C violates JEDEC specifications and risks timing violations, increased IDD6 current, and potential data retention failure. For extended temperature applications, Winbond offers W632GG8NB15I (-40°C to 95°C) and W632GG8NB15J (-40°C to 105°C) variants with enhanced refresh and ASR support.
How does write leveling function in the W632GG8NB-15, and is it mandatory?
Write leveling in the W632GG8NB-15 is a calibration procedure that adjusts DQS delay relative to CK to compensate for board skew, using the MPR to return a known pattern. It is mandatory for reliable operation at DDR3-1333 speeds, especially with >2-inch trace lengths. The process is initiated via MRS command and requires host controller support; Section 9.9 of the W632GG8NB-15 datasheet specifies timing, entry/exit sequences, and DQS duty-cycle constraints essential for successful calibration.
W632GG8NB-15 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GG8NB-15 FAQ
1.How can I place an order for W632GG8NB-15 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG8NB-15 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG8NB-15 reliable?
The price and inventory of W632GG8NB-15 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG8NB-15 is usually 5 days.
3.What payment methods are accepted for W632GG8NB-15?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG8NB-15 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG8NB-15?
W632GG8NB-15 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG8NB-15 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG8NB-15?
For technical support, including W632GG8NB-15 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG8NB-15 requirements.
6.How does Aetrix verify that W632GG8NB-15 is sourced from the original manufacturer or authorized distributors?
All W632GG8NB-15 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG8NB-15 meets industry standards.
7.What is the process for return or replacement of W632GG8NB-15?
All W632GG8NB-15 units undergo pre-shipment inspection (PSI). If there is an issue with W632GG8NB-15, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG8NB-15 part is unused and in its original packaging.
Return procedure for W632GG8NB-15:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG8NB-15 Tags
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