Winbond Electronics Corporation W632GG8NB15I

Overview

W632GG8NB15I from Winbond Electronics is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 CL-tRCD-tRP), with 1.5 V supply, industrial temperature range (−40°C to +95°C), and VFBGA78 package. It serves as main system memory in embedded controllers, networking edge devices, and industrial HMIs requiring reliable, JEDEC-compliant DRAM with ZQ calibration and dynamic ODT.

For engineers reviewing the W632GG8NB15I datasheet, W632GG8NB15I pinout, W632GG8NB15I application, or W632GG8NB15I equivalent, key selection considerations include its DDR3-1333 timing (tCK = 1.5 ns min), industrial-grade thermal rating, VFBGA78 ball map, on-die termination configuration options, and compatibility with standard DDR3 memory controllers supporting CAS Write Latency (CWL) = 5–7 and CAS Latency (CL) = 5–10.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4).

Functional operation includes asynchronous RESET# for power-up initialization, ZQ calibration using external 240 Ω resistor for output driver and ODT tuning, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DQ-DQS skew compensation. Power management features include precharged/active power-down modes, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR).

Key Specifications

Pinout & Package

VFBGA78 package (8 × 10.5 mm, 1.0 mm thickness, 0.8 mm ball pitch) with lead-free, RoHS-compliant construction. Ball grid follows JEDEC MO-245AC standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GG8NB15I offers native 1.5 V operation, exact 8-bit bus alignment, and identical VFBGA78 mechanical fit - enabling drop-in replacement in legacy DDR3-1333 industrial designs without voltage or layout changes.

Availability

W632GG8NB15I is available at Aetrix Electronics and suitable for industrial HMIs, networking edge routers, medical diagnostic terminals, and smart energy gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GG8NB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical embedded systems where extended temperature operation, JEDEC compliance, and long-term supply stability are mandatory.

FAQ

What is the maximum operating frequency supported by the W632GG8NB15I?

The W632GG8NB15I is rated for DDR3-1333 operation, meaning it supports a maximum clock frequency of 667 MHz (1333 MT/s data rate). Its tCK(AVG) specification is 1.5 ns minimum, and it meets JEDEC timing requirements for CL=9, tRCD=9, tRP=9 cycles at this speed. It does not support higher-speed bins like DDR3-1600 or DDR3-1866.

Does the W632GG8NB15I support automatic self-refresh (ASR) mode?

Yes, the W632GG8NB15I supports Auto Self-Refresh (ASR) mode, enabled via Mode Register 2 (MR2) bit A6. This feature is required when operating above 85°C (up to +95°C), as it doubles the refresh command frequency to maintain data retention - a mandatory configuration for full industrial temperature compliance.

What termination resistances are available via on-die termination (ODT) on the W632GG8NB15I?

The W632GG8NB15I supports programmable ODT values: RTT_NOM = 75 Ω or 150 Ω (for reads), and RTT_WR = 75 Ω, 120 Ω, or 60 Ω (for writes), selected via MR1 and MR2. These values are calibrated using the ZQ pin and external 240 Ω reference resistor to ensure precise impedance matching under varying conditions.

Can the W632GG8NB15I be used with a DDR3L memory controller?

No - the W632GG8NB15I is a standard DDR3 (1.5 V) device and is not compatible with DDR3L (1.35 V) controllers. Its VDD/VDDQ specification is 1.5 V ± 75 mV; operation below 1.425 V violates DC operating conditions and may cause functional failure or data corruption.

How is write leveling implemented on the W632GG8NB15I?

Write leveling on the W632GG8NB15I uses the Multi-Purpose Register (MPR) and controller-driven training: the DRAM outputs a fixed MPR pattern on DQ while the controller adjusts DQS delay until valid capture is achieved. This procedure compensates for DQ-DQS skew and is initiated via MRS command with A10=1 and A9=0, as defined in section 9.9 of the datasheet.