Winbond Electronics Corporation W632GG8NB15I TR

Overview

W632GG8NB15I TR from Winbond is a 2 Gb (256 MB) DDR3 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 CL-tRCD-tRP), with 1.5 V supply, industrial temperature range (–40°C to +95°C), and VFBGA78 (8 mm × 10.5 mm) package. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring JEDEC-compliant low-power DRAM.

For engineers reviewing the W632GG8NB15I TR datasheet, W632GG8NB15I TR pinout, W632GG8NB15I TR application, or W632GG8NB15I TR equivalent, key selection considerations include its DDR3-1333 timing (tCK = 1.5 ns min), programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration support, and industrial-grade thermal reliability up to +95°C case temperature.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to CK, enabling stable high-speed data capture.

It supports full JEDEC DDR3 features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst chop (BC4) and burst length 8 (BL8), multi-purpose register (MPR) for system timing calibration, write leveling, and dynamic ODT (Rtt_WR). Refresh modes include standard, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR).

Key Specifications

Pinout & Package

VFBGA78 package (8 mm × 10.5 mm, 1.0 mm thickness, 0.8 mm ball pitch), RoHS-compliant lead-free construction. Ball grid arranged in 9 rows × 9 columns with corner balls omitted (A1, A9, J1, J9 missing), total 78 functional balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W632GG8NB15I TR, MT41K256M8DA-125:A offers higher speed but mandates 1.35 V operation and lacks industrial-grade RESET# robustness, while IS43TR16256B-125KBL delivers same density in x16 format but cannot replace x8 layouts without hardware changes.

Availability

W632GG8NB15I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical electronics, and smart energy applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GG8NB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG8NB series targets cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant DDR3 with extended temperature support, robust initialization, and advanced power management features like PASR and ASR.

FAQ

What is the maximum operating frequency supported by W632GG8NB15I TR?

W632GG8NB15I TR is rated for DDR3-1333 operation, corresponding to a maximum clock frequency of 667 MHz (1333 MT/s). Its tCK(AVG) minimum is 1.5 ns, and it supports CL=9, tRCD=9, tRP=9 timing at this speed. The device does not support higher speed bins such as DDR3-1600 or DDR3-1866; those require different speed-grade suffixes (e.g., -12 or -11).

Does W632GG8NB15I TR support automatic self-refresh (ASR) for high-temperature operation?

Yes, W632GG8NB15I TR supports Auto Self-Refresh (ASR) via Mode Register 2 (MR2). When enabled (MR2[A6] = 1), the device automatically doubles refresh rate above 85°C ambient, ensuring data retention at its full industrial range up to +95°C case temperature without host controller intervention - a key requirement for fanless industrial deployments.

What package type and ball count does W632GG8NB15I TR use?

W632GG8NB15I TR uses a VFBGA78 package: very thin fine-pitch ball grid array with 78 solder balls, 8 mm × 10.5 mm body size, 1.0 mm maximum height, and 0.8 mm ball pitch. It follows JEDEC MO-245AC mechanical standards and is RoHS-compliant with lead-free terminations.

Can W632GG8NB15I TR be used with a DDR3L controller designed for 1.35 V operation?

No - W632GG8NB15I TR is a standard DDR3 (not DDR3L) device requiring VDD/VDDQ = 1.5 V ± 0.075 V. It is incompatible with DDR3L-only controllers that lack 1.5 V support. Using it with a 1.35 V supply will cause functional failure and potential damage; always verify controller VDDQ compliance before integration.

What is the purpose of the ZQ pin on W632GG8NB15I TR, and what external component is required?

The ZQ pin on W632GG8NB15I TR connects to a precision 240 Ω ±1 % external resistor to ground, enabling on-die calibration of output driver strength and on-die termination (ODT) impedances. This calibration compensates for process, voltage, and temperature variations, maintaining signal integrity across the full industrial temperature range.