Winbond Electronics Corporation W632GU6KB12I TR
- Part No.:
- W632GU6KB12I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W632GU6KB12I TR.pdf
- Description:
- IC DRAM 2GBIT 96-WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,990
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W632GU6KB12I TR from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in 96-ball WBGA (9 mm × 13 mm). It delivers 1600 MT/s data rates for memory subsystems in networking edge devices, industrial HMIs, and embedded controllers requiring low-voltage, high-reliability DRAM.
For engineers reviewing the W632GU6KB12I TR datasheet, W632GU6KB12I TR pinout, W632GU6KB12I TR application, or W632GU6KB12I TR equivalent, key selection criteria include its DDR3L-1600 speed grade, industrial temperature support, on-die termination (ODT) programmability, ZQ calibration capability, and asynchronous RESET# functionality - all critical for stable memory interface design in thermally demanding environments.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the cross-point, and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. Its DLL aligns DQ and DQS transitions to CK, supporting precise timing control across voltage and temperature variations.
The device supports programmable CAS Latency (CL = 6, 7, 8, 9, 10, 11), CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), and dynamic ODT (Rtt_WR) with multiple RTT values. It also features Multi-Purpose Register (MPR)-based system timing calibration, write leveling, and partial array self-refresh (PASR) for power optimization in idle bank subsets.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M × 8 banks × 16 bits), enabling 256 MB of 16-bit wide memory space |
| Speed Grade | DDR3L-1600 (11-11-11), supporting 800 MHz clock frequency and 1600 MT/s transfer rate |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical), reducing power vs. standard DDR3 while maintaining backward compatibility to 1.5 V |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C, qualified for industrial-grade reliability without derating |
| CAS Latency | Configurable CL = 6, 7, 8, 9, 10, or 11, allowing trade-off between latency and bandwidth per system timing budget |
| On-Die Termination | Programmable Rtt_Nom (60 Ω, 120 Ω, etc.) and dynamic Rtt_WR during writes, eliminating external termination resistors and improving signal integrity |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω ±1 % reference resistor to ground, correcting output driver and ODT impedance drift |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C, ensuring data retention under extended thermal stress |
Pinout & Package
Packaged in 96-ball WBGA (9 mm × 13 mm, RoHS-compliant, lead-free), with ball pitch of 0.8 mm and standard JEDEC DDR3L footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Latches all commands and addresses at cross-point; defines timing reference for all operations |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe for read/write data; edge-aligned on reads, center-aligned on writes |
| RESET# | Asynchronous Reset Input | Initiates power-up initialization sequence and resets internal state without requiring stable clocks |
| ODT | On-Die Termination Control | Enables/disables programmable termination on DQ/DQS/DM pins per MR1 configuration |
| ZQ | Calibration Reference Pin | Connects to 240 Ω ±1 % resistor to ground for factory and runtime output/ODT impedance calibration |
| VREFCA / VREFDQ | Reference Voltage Inputs | VREFCA sets command/address threshold; VREFDQ sets data I/O threshold - both require stable 0.5×VDDQ |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL & AL | Supports write latency tuning (WL = AL + CWL) to match controller timing margins across frequency and voltage corners |
| Dynamic ODT (Rtt_WR) | Switches termination impedance on DQ/DQS during write bursts only, minimizing noise on read cycles and improving bus efficiency |
| Write Leveling | Enables per-lane DQS delay calibration via MRS, compensating for PCB trace skew in high-speed memory interfaces |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active banks, extending battery life in portable industrial systems |
| Backward 1.5 V Compatibility | Operates at standard DDR3 voltage (1.5 V ± 0.075 V) without hardware change, easing migration from legacy DDR3 designs |
Applications
| Industrial HMI Controllers | Networking Edge Routers |
|---|---|
Use Scenario: Touch-enabled operator panels in factory automation systems requiring persistent memory operation across –40°C to +95°C ambient. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A9/A15 SoCs via 16-bit DDR3L bus with strict tREFI and ODT timing compliance. Use Value: Industrial temperature rating and PASR reduce refresh power by >40 % versus commercial DDR3L, extending panel uptime in uncooled enclosures. | Use Scenario: Packet buffering in fanless enterprise switches deployed in telecom cabinets with limited airflow and thermal cycling. IC Role / Device Role / Timing Role: Dual-rank DDR3L buffer supporting line-rate forwarding; relies on write leveling and ZQ calibration for signal integrity at 1600 MT/s. Use Value: Dynamic ODT and calibrated 34 Ω drivers maintain <±50 mV eye height at DQ pins, meeting IEEE 802.3bj jitter specs without layout rework. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image preprocessing units in portable ultrasound systems where low standby power and fast wake-from-sleep are mandatory. IC Role / Device Role / Timing Role: High-bandwidth frame buffer for FPGA-accelerated image pipelines; uses self-refresh and ASR mode during idle periods. Use Value: IDD6 = 19 mA at 85°C enables >12-hour battery operation in handheld diagnostics tools without thermal throttling. | Use Scenario: Real-time pattern memory in semiconductor ATE platforms requiring deterministic read/write latency and error-free burst transfers. IC Role / Device Role / Timing Role: Synchronous memory subsystem for vector storage; leverages posted CAS and AL=1 to hide command bus contention during high-throughput test sequences. Use Value: CL=11 + AL=1 yields RL=12, matching tester timing engines' fixed setup windows and eliminating inter-burst gaps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-125KBL | Same density (2 Gb), 96-ball WBGA, DDR3L-1600, but supports only CL=9/11 and lacks PASR | No partial array self-refresh; higher IDD6 (22 mA) limits battery-powered use cases | Select when cost sensitivity outweighs power optimization needs and full JEDEC DDR3L-1600 compliance is sufficient |
| MT41K256M16HA-125:E | 2 Gb, 96-ball FBGA, DDR3L-1600, includes built-in temperature sensor and extended refresh modes | Requires different ZQ resistor (200 Ω) and has non-identical ball map; not pin-compatible | Prefer for designs needing thermal-aware refresh but accept board redesign and additional firmware integration |
Compared with IS43TR16256B-125KBL and MT41K256M16HA-125:E, the W632GU6KB12I TR uniquely combines industrial temperature support, PASR, and full write leveling capability in a drop-in WBGA package - making it optimal for space-constrained, thermally aggressive embedded systems where memory power, timing margin, and qualification rigor are co-prioritized.
Availability
W632GU6KB12I TR is available at Aetrix Electronics and suitable for industrial HMIs, networking edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU6KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based global supplier of specialty memory and microcontroller solutions, serving industrial, automotive, and communications markets since 1987.
The W632GU6KB series belongs to Winbond's DDR3L SDRAM product line, engineered specifically for industrial and embedded applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity without design compromises.
FAQ
What is the maximum operating frequency supported by W632GU6KB12I TR?
The W632GU6KB12I TR is rated for DDR3L-1600 operation, supporting a maximum clock frequency of 800 MHz and data transfer rates up to 1600 MT/s. This is validated under industrial temperature conditions (–40°C to +95°C) with VDD/VDDQ = 1.283 V to 1.45 V and meets all AC timing parameters specified in the -12I speed bin, including tAA ≤ 13.75 ns and tRCD ≤ 13.75 ns.
Does W632GU6KB12I TR support backward compatibility with standard DDR3 (1.5 V) systems?
Yes, W632GU6KB12I TR supports backward compatibility with 1.5 V DDR3 systems. It operates with VDD/VDDQ = 1.5 V ± 0.075 V per JEDEC JESD79-3F, retaining full functionality including CAS latency settings, ODT control, and refresh modes. No hardware modification is required, though SPD programming must reflect the 1.5 V operating point for reliable initialization.
How does the ZQ calibration function work on W632GU6KB12I TR?
The W632GU6KB12I TR performs ZQ calibration by referencing an external 240 Ω ±1 % resistor connected between the ZQ pin and ground. During calibration, the device adjusts its 34 Ω output driver and ODT impedances to match this reference, compensating for process, voltage, and temperature variation. Calibration is initiated via ZQCL command and can be repeated dynamically using ZQCS for ongoing accuracy.
What is the purpose of the RESET# pin on W632GU6KB12I TR?
The RESET# pin on W632GU6KB12I TR provides asynchronous reset functionality, enabling power-up initialization and recovery from fault states without requiring stable clocks or supply ramp monitoring. When asserted low, it forces the device into a known state and triggers the internal initialization sequence, including DLL locking and mode register loading - essential for robust boot in industrial power-supply environments.
Can W632GU6KB12I TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU6KB12I TR supports Partial Array Self-Refresh (PASR) via MR2 configuration (A1–A3 bits). PASR allows selective refresh of only active memory banks, reducing self-refresh current from 19 mA to as low as 9.5 mA depending on bank count. This feature is particularly valuable in battery-powered or thermally constrained applications where minimizing standby power is critical.
W632GU6KB12I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W632GU6KB12I TR FAQ
1.How can I place an order for W632GU6KB12I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6KB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6KB12I TR reliable?
The price and inventory of W632GU6KB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6KB12I TR is usually 5 days.
3.What payment methods are accepted for W632GU6KB12I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6KB12I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6KB12I TR?
W632GU6KB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6KB12I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6KB12I TR?
For technical support, including W632GU6KB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6KB12I TR requirements.
6.How does Aetrix verify that W632GU6KB12I TR is sourced from the original manufacturer or authorized distributors?
All W632GU6KB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6KB12I TR meets industry standards.
7.What is the process for return or replacement of W632GU6KB12I TR?
All W632GU6KB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6KB12I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6KB12I TR part is unused and in its original packaging.
Return procedure for W632GU6KB12I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6KB12I TR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
