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Winbond Electronics Corporation W632GU6KB-12 TR

Part No.:
W632GU6KB-12 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-TFBGA
Datasheet:
AetrixW632GU6KB-12 TR.pdf
Description:
IC DRAM 2GBIT 96-WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,537

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Product details

Overview

W632GU6KB-12 TR from Winbond Electronics is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35 V nominal supply, compliant with DDR3L-1600 (11-11-11) timing, featuring 96-ball WBGA (9 × 13 mm²) packaging, and supporting CAS Latency 6–11 and CWL 5–8 for use in embedded computing, industrial HMIs, and low-power networking equipment.

For engineers reviewing the W632GU6KB-12 TR datasheet, W632GU6KB-12 TR pinout, W632GU6KB-12 TR application, or W632GU6KB-12 TR equivalent, this page delivers verified electrical specs, ball mapping, JEDEC-compliant DDR3L timing behavior, ODT configuration options, and validated alternative parts for memory subsystem design and BOM optimization.

Technical Context

The W632GU6KB-12 TR implements an 8-bank, 8-bit prefetch DDR3L architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQ/DQS timing and programmable additive latency (AL = 0, CL−1, CL−2) enabling efficient command bus utilization. It supports both synchronous and dynamic on-die termination (ODT), ZQ calibration for output driver and ODT impedance tuning, and asynchronous RESET# for power-up initialization.

Its functional scope includes burst read/write with BL8/BC4 modes, auto-precharge, multi-mode refresh (standard, self-refresh, ASR, PASR), write leveling for timing margin optimization, and MPR-based system-level calibration-fully compliant with JEDEC JESD79-3F for DDR3L-1600 operation across 0°C to 95°C case temperature.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (16M words × 8 banks × 16 bits), enabling 256 MB of 16-bit wide memory space
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V DDR3 systems
Speed GradeDDR3L-1600 (11-11-11), max clock frequency 800 MHz, tCK(AVG) ≤ 2.5 ns
CAS LatencyProgrammable CL = 6, 7, 8, 9, 10, 11 - determines minimum tAA and impacts read access timing
CAS Write LatencyProgrammable CWL = 5, 6, 7, 8 - sets write latency WL = AL + CWL for precise data capture alignment
Package96-ball WBGA, 9 mm × 13 mm, RoHS-compliant, lead-free, 0.8 mm ball pitch
Operating Temp0°C ≤ TCASE ≤ 95°C (commercial extended), with full JEDEC AC/DC spec compliance
Refresh IntervaltREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C), requiring doubled refresh rate at high temperature

Pinout & Package

W632GU6KB-12 TR uses a 96-ball fine-pitch WBGA package (9 × 13 mm², 0.8 mm pitch) with standard DDR3L ball assignment including dedicated DQ/DQS/DQS#/DM groups, dual VDDQ/VDD/VSSQ/VSS rails, differential clocks (CK/CK#), control signals (CS#, RAS#, CAS#, WE#, ODT, CKE), address/bank inputs (A0–A13, BA0–BA2), and calibration pins (ZQ, VREFCA, VREFDQ).

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputLatches all commands/address on rising edge of CK; defines timing reference for all I/O operations
DQS / DQS#Differential data strobeSource-synchronous strobe aligned to center of write data and edge of read data; enables DDR timing margining
RESET#Asynchronous reset inputInitiates power-up sequence and resets internal state machines without requiring stable clocks
ZQCalibration reference pinConnects to 240 Ω ±1 % external resistor to ground for factory-trimmed output driver and ODT impedance calibration
VREFCA / VREFDQReference voltage inputsVREFCA sets mid-point threshold for command/address inputs; VREFDQ sets threshold for DQ/DQS inputs
ODTOn-die termination controlEnables/disables programmable termination resistances (RTT_NOM, RTT_WR) on DQ/DQS/DM lines during reads/writes

Key Features

FeatureDesign Value
Dynamic ODT (Rtt_WR)Allows real-time switching of termination resistance during write bursts to improve signal integrity on bidirectional DQ bus
Write LevelingEnables controller-driven DQS-to-CK skew calibration to compensate for board trace mismatch in high-speed write setup
Multi-Purpose Register (MPR)Provides predefined read pattern for system-level timing margin validation without disturbing memory contents
Partial Array Self-Refresh (PASR)Reduces self-refresh current by refreshing only active banks, lowering IDD6 by up to 40 % in partial-use scenarios
Posted CAS with ALDecouples command issuance from data availability, increasing command bus efficiency by allowing back-to-back commands before CAS latency completes
Auto Self-Refresh (ASR)Automatically transitions to self-refresh when temperature exceeds 85°C, eliminating host intervention for thermal management

Applications

Industrial HMI ControllersNetwork Edge Routers

Use Scenario: Touch-enabled operator interfaces in factory automation panels requiring reliable memory operation under variable ambient temperatures and EMI.

IC Role / Device Role / Timing Role: Primary program/data storage for ARM Cortex-A series SoCs, interfaced via 16-bit DDR3L bus with strict tRC/tRAS timing enforcement.

Use Value: DDR3L-1600 speed bin ensures sufficient bandwidth for GUI rendering while 1.35 V operation reduces system power by ~15 % vs. 1.5 V DDR3.

Use Scenario: Packet buffering and forwarding tables in fanless enterprise switches deployed in telecom cabinets with limited airflow.

IC Role / Device Role / Timing Role: High-reliability working memory for network processors, leveraging PASR and ASR to maintain data integrity during thermal transients.

Use Value: 0–95°C commercial extended temperature rating and dynamic ODT support enable stable operation without forced cooling or layout derating.

Medical Imaging TerminalsSmart Energy Gateways

Use Scenario: DICOM viewer stations in clinical environments where memory retention and low standby power are critical for regulatory compliance.

IC Role / Device Role / Timing Role: Frame buffer and application memory for Linux-based imaging software stacks, using self-refresh and ZQ calibration for long idle periods.

Use Value: IDD6 ≤ 19 mA at 85°C and ZQ recalibration capability ensure consistent signal integrity after wake-from-sleep cycles.

Use Scenario: Two-way communication hubs aggregating smart meter data in utility substations exposed to wide diurnal temperature swings.

IC Role / Device Role / Timing Role: Local cache for time-series data logging and firmware updates, interfaced to microcontrollers with limited DDR PHY resources.

Use Value: Write leveling and MPR support simplify timing closure on cost-optimized PCBs with asymmetric DQS routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M16JT-125:K1.5 V only DDR3 (not DDR3L); 128M × 16 density; -125 speed grade = DDR3-1600; different ball map (x16 FBGA 96)Requires 1.5 V supply rail; lacks DDR3L low-voltage features (ASR, PASR, ZQ calibration)Select only if legacy 1.5 V system design prohibits voltage reduction and DDR3L-specific power management is unnecessary.
IS43TR16128B-125KBLDDR3L-1600 x16; 128M × 16 = 2 Gb; same 96-ball WBGA; supports CL=11, CWL=8; identical tRC/tRAS timingPin-compatible replacement with matching ball assignment, VDDQ range, and JEDEC DDR3L-1600 complianceValid drop-in alternative for W632GU6KB-12 TR where second-source assurance is required and same-package footprint is mandatory.

Compared with W632GU6KB-12 TR, MT41K128M16JT-125:K requires separate 1.5 V regulation and lacks low-power features, while IS43TR16128B-125KBL offers true pin-to-pin compatibility and identical DDR3L-1600 electrical behavior-making it the preferred alternative for seamless qualification and supply chain diversification.

Availability

W632GU6KB-12 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, and smart energy gateways requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3L performance.

Supply support for W632GU6KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6KB-12 TR belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability embedded systems where power efficiency, thermal robustness, and JEDEC compliance are essential design requirements.

FAQ

What is the maximum operating frequency supported by W632GU6KB-12 TR?

W632GU6KB-12 TR supports a maximum clock frequency of 800 MHz (tCK = 1.25 ns), corresponding to DDR3L-1600 data rates of 1600 MT/s per pin. This is validated under JEDEC conditions with CL = 11 and CWL = 8, and requires stable 1.35 V ±6.5 % supply and 0°C to 95°C case temperature operation.

Does W632GU6KB-12 TR support both DDR3 and DDR3L voltage levels?

Yes, W632GU6KB-12 TR operates at 1.35 V nominal (DDR3L) but is fully backward compatible with 1.5 V DDR3 systems. Its VDD/VDDQ range spans 1.283 V to 1.45 V for DDR3L mode and 1.425 V to 1.575 V for DDR3 mode, enabling reuse in legacy designs without hardware modification.

How does the ZQ calibration function work on W632GU6KB-12 TR?

W632GU6KB-12 TR performs ZQ calibration by measuring an external 240 Ω ±1 % resistor connected to the ZQ pin and adjusting its output driver and ODT impedances accordingly. Calibration occurs automatically at power-up and can be triggered manually via ZQCL or ZQCS commands to maintain signal integrity across voltage/temperature drift.

Can W632GU6KB-12 TR operate in Partial Array Self-Refresh (PASR) mode?

Yes, W632GU6KB-12 TR supports PASR via MR2 programming (bits A2–A0), allowing refresh of only selected banks (¼, ½, or full array). This reduces self-refresh current (IDD6) proportionally-critical for battery-backed or thermally constrained applications where full-array refresh is unnecessary.

What is the ball pitch and footprint compatibility of W632GU6KB-12 TR?

W632GU6KB-12 TR uses a 96-ball WBGA package with 0.8 mm ball pitch and 9 mm × 13 mm body size. Its ball map matches JEDEC-standard DDR3L x16 96-ball layouts, ensuring mechanical and solder-reflow compatibility with industry-standard PCB footprints for DDR3L SDRAMs.

W632GU6KB-12 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
-
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-WBGA (9x13)

W632GU6KB-12 TR FAQ

1.How can I place an order for W632GU6KB-12 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6KB-12 TR reliable?

The price and inventory of W632GU6KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6KB-12 TR is usually 5 days.

3.What payment methods are accepted for W632GU6KB-12 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6KB-12 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6KB-12 TR?

W632GU6KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6KB-12 TR?

For technical support, including W632GU6KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6KB-12 TR requirements.

6.How does Aetrix verify that W632GU6KB-12 TR is sourced from the original manufacturer or authorized distributors?

All W632GU6KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6KB-12 TR meets industry standards.

7.What is the process for return or replacement of W632GU6KB-12 TR?

All W632GU6KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6KB-12 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6KB-12 TR part is unused and in its original packaging.

Return procedure for W632GU6KB-12 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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