Winbond Electronics Corporation W632GU6KB-12 TR
- Part No.:
- W632GU6KB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W632GU6KB-12 TR.pdf
- Description:
- IC DRAM 2GBIT 96-WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,537
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Product details
Overview
W632GU6KB-12 TR from Winbond Electronics is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35 V nominal supply, compliant with DDR3L-1600 (11-11-11) timing, featuring 96-ball WBGA (9 × 13 mm²) packaging, and supporting CAS Latency 6–11 and CWL 5–8 for use in embedded computing, industrial HMIs, and low-power networking equipment.
For engineers reviewing the W632GU6KB-12 TR datasheet, W632GU6KB-12 TR pinout, W632GU6KB-12 TR application, or W632GU6KB-12 TR equivalent, this page delivers verified electrical specs, ball mapping, JEDEC-compliant DDR3L timing behavior, ODT configuration options, and validated alternative parts for memory subsystem design and BOM optimization.
Technical Context
The W632GU6KB-12 TR implements an 8-bank, 8-bit prefetch DDR3L architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQ/DQS timing and programmable additive latency (AL = 0, CL−1, CL−2) enabling efficient command bus utilization. It supports both synchronous and dynamic on-die termination (ODT), ZQ calibration for output driver and ODT impedance tuning, and asynchronous RESET# for power-up initialization.
Its functional scope includes burst read/write with BL8/BC4 modes, auto-precharge, multi-mode refresh (standard, self-refresh, ASR, PASR), write leveling for timing margin optimization, and MPR-based system-level calibration-fully compliant with JEDEC JESD79-3F for DDR3L-1600 operation across 0°C to 95°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M words × 8 banks × 16 bits), enabling 256 MB of 16-bit wide memory space |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V DDR3 systems |
| Speed Grade | DDR3L-1600 (11-11-11), max clock frequency 800 MHz, tCK(AVG) ≤ 2.5 ns |
| CAS Latency | Programmable CL = 6, 7, 8, 9, 10, 11 - determines minimum tAA and impacts read access timing |
| CAS Write Latency | Programmable CWL = 5, 6, 7, 8 - sets write latency WL = AL + CWL for precise data capture alignment |
| Package | 96-ball WBGA, 9 mm × 13 mm, RoHS-compliant, lead-free, 0.8 mm ball pitch |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C (commercial extended), with full JEDEC AC/DC spec compliance |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C), requiring doubled refresh rate at high temperature |
Pinout & Package
W632GU6KB-12 TR uses a 96-ball fine-pitch WBGA package (9 × 13 mm², 0.8 mm pitch) with standard DDR3L ball assignment including dedicated DQ/DQS/DQS#/DM groups, dual VDDQ/VDD/VSSQ/VSS rails, differential clocks (CK/CK#), control signals (CS#, RAS#, CAS#, WE#, ODT, CKE), address/bank inputs (A0–A13, BA0–BA2), and calibration pins (ZQ, VREFCA, VREFDQ).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Latches all commands/address on rising edge of CK; defines timing reference for all I/O operations |
| DQS / DQS# | Differential data strobe | Source-synchronous strobe aligned to center of write data and edge of read data; enables DDR timing margining |
| RESET# | Asynchronous reset input | Initiates power-up sequence and resets internal state machines without requiring stable clocks |
| ZQ | Calibration reference pin | Connects to 240 Ω ±1 % external resistor to ground for factory-trimmed output driver and ODT impedance calibration |
| VREFCA / VREFDQ | Reference voltage inputs | VREFCA sets mid-point threshold for command/address inputs; VREFDQ sets threshold for DQ/DQS inputs |
| ODT | On-die termination control | Enables/disables programmable termination resistances (RTT_NOM, RTT_WR) on DQ/DQS/DM lines during reads/writes |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Allows real-time switching of termination resistance during write bursts to improve signal integrity on bidirectional DQ bus |
| Write Leveling | Enables controller-driven DQS-to-CK skew calibration to compensate for board trace mismatch in high-speed write setup |
| Multi-Purpose Register (MPR) | Provides predefined read pattern for system-level timing margin validation without disturbing memory contents |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, lowering IDD6 by up to 40 % in partial-use scenarios |
| Posted CAS with AL | Decouples command issuance from data availability, increasing command bus efficiency by allowing back-to-back commands before CAS latency completes |
| Auto Self-Refresh (ASR) | Automatically transitions to self-refresh when temperature exceeds 85°C, eliminating host intervention for thermal management |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Touch-enabled operator interfaces in factory automation panels requiring reliable memory operation under variable ambient temperatures and EMI. IC Role / Device Role / Timing Role: Primary program/data storage for ARM Cortex-A series SoCs, interfaced via 16-bit DDR3L bus with strict tRC/tRAS timing enforcement. Use Value: DDR3L-1600 speed bin ensures sufficient bandwidth for GUI rendering while 1.35 V operation reduces system power by ~15 % vs. 1.5 V DDR3. | Use Scenario: Packet buffering and forwarding tables in fanless enterprise switches deployed in telecom cabinets with limited airflow. IC Role / Device Role / Timing Role: High-reliability working memory for network processors, leveraging PASR and ASR to maintain data integrity during thermal transients. Use Value: 0–95°C commercial extended temperature rating and dynamic ODT support enable stable operation without forced cooling or layout derating. |
| Medical Imaging Terminals | Smart Energy Gateways |
Use Scenario: DICOM viewer stations in clinical environments where memory retention and low standby power are critical for regulatory compliance. IC Role / Device Role / Timing Role: Frame buffer and application memory for Linux-based imaging software stacks, using self-refresh and ZQ calibration for long idle periods. Use Value: IDD6 ≤ 19 mA at 85°C and ZQ recalibration capability ensure consistent signal integrity after wake-from-sleep cycles. | Use Scenario: Two-way communication hubs aggregating smart meter data in utility substations exposed to wide diurnal temperature swings. IC Role / Device Role / Timing Role: Local cache for time-series data logging and firmware updates, interfaced to microcontrollers with limited DDR PHY resources. Use Value: Write leveling and MPR support simplify timing closure on cost-optimized PCBs with asymmetric DQS routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125:K | 1.5 V only DDR3 (not DDR3L); 128M × 16 density; -125 speed grade = DDR3-1600; different ball map (x16 FBGA 96) | Requires 1.5 V supply rail; lacks DDR3L low-voltage features (ASR, PASR, ZQ calibration) | Select only if legacy 1.5 V system design prohibits voltage reduction and DDR3L-specific power management is unnecessary. |
| IS43TR16128B-125KBL | DDR3L-1600 x16; 128M × 16 = 2 Gb; same 96-ball WBGA; supports CL=11, CWL=8; identical tRC/tRAS timing | Pin-compatible replacement with matching ball assignment, VDDQ range, and JEDEC DDR3L-1600 compliance | Valid drop-in alternative for W632GU6KB-12 TR where second-source assurance is required and same-package footprint is mandatory. |
Compared with W632GU6KB-12 TR, MT41K128M16JT-125:K requires separate 1.5 V regulation and lacks low-power features, while IS43TR16128B-125KBL offers true pin-to-pin compatibility and identical DDR3L-1600 electrical behavior-making it the preferred alternative for seamless qualification and supply chain diversification.
Availability
W632GU6KB-12 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, and smart energy gateways requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3L performance.
Supply support for W632GU6KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU6KB-12 TR belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability embedded systems where power efficiency, thermal robustness, and JEDEC compliance are essential design requirements.
FAQ
What is the maximum operating frequency supported by W632GU6KB-12 TR?
W632GU6KB-12 TR supports a maximum clock frequency of 800 MHz (tCK = 1.25 ns), corresponding to DDR3L-1600 data rates of 1600 MT/s per pin. This is validated under JEDEC conditions with CL = 11 and CWL = 8, and requires stable 1.35 V ±6.5 % supply and 0°C to 95°C case temperature operation.
Does W632GU6KB-12 TR support both DDR3 and DDR3L voltage levels?
Yes, W632GU6KB-12 TR operates at 1.35 V nominal (DDR3L) but is fully backward compatible with 1.5 V DDR3 systems. Its VDD/VDDQ range spans 1.283 V to 1.45 V for DDR3L mode and 1.425 V to 1.575 V for DDR3 mode, enabling reuse in legacy designs without hardware modification.
How does the ZQ calibration function work on W632GU6KB-12 TR?
W632GU6KB-12 TR performs ZQ calibration by measuring an external 240 Ω ±1 % resistor connected to the ZQ pin and adjusting its output driver and ODT impedances accordingly. Calibration occurs automatically at power-up and can be triggered manually via ZQCL or ZQCS commands to maintain signal integrity across voltage/temperature drift.
Can W632GU6KB-12 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU6KB-12 TR supports PASR via MR2 programming (bits A2–A0), allowing refresh of only selected banks (¼, ½, or full array). This reduces self-refresh current (IDD6) proportionally-critical for battery-backed or thermally constrained applications where full-array refresh is unnecessary.
What is the ball pitch and footprint compatibility of W632GU6KB-12 TR?
W632GU6KB-12 TR uses a 96-ball WBGA package with 0.8 mm ball pitch and 9 mm × 13 mm body size. Its ball map matches JEDEC-standard DDR3L x16 96-ball layouts, ensuring mechanical and solder-reflow compatibility with industry-standard PCB footprints for DDR3L SDRAMs.
W632GU6KB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W632GU6KB-12 TR FAQ
1.How can I place an order for W632GU6KB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6KB-12 TR reliable?
The price and inventory of W632GU6KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6KB-12 TR is usually 5 days.
3.What payment methods are accepted for W632GU6KB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6KB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6KB-12 TR?
W632GU6KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6KB-12 TR?
For technical support, including W632GU6KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6KB-12 TR requirements.
6.How does Aetrix verify that W632GU6KB-12 TR is sourced from the original manufacturer or authorized distributors?
All W632GU6KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6KB-12 TR meets industry standards.
7.What is the process for return or replacement of W632GU6KB-12 TR?
All W632GU6KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6KB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6KB-12 TR part is unused and in its original packaging.
Return procedure for W632GU6KB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6KB-12 TR Tags

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M24C02-WMN6TP
STMicroelectronics
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STMicroelectronics

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