Winbond Electronics Corporation W632GU6KB15I

Overview

W632GU6KB15I from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35V nominal supply with DDR3L-1333 (9-9-9) timing and industrial temperature range (–40°C to +95°C). It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10), CAS Write Latency (CWL = 5–7), ZQ calibration, on-die termination (ODT), and asynchronous RESET# for embedded control and memory subsystems in networking and industrial computing.

For engineers reviewing the W632GU6KB15I datasheet, W632GU6KB15I pinout, W632GU6KB15I application, or W632GU6KB15I equivalent, key selection considerations include its industrial-grade thermal rating, DDR3L-1333 speed bin compliance, 96-ball WBGA package, support for PASR and ASR power management modes, and compatibility with JEDEC-standard DDR3L command protocols and timing definitions.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential clock interface (CK/CK#) latches commands on the crosspoint, while bi-directional DQS/DQS# strobes align read data edge-wise and write data center-wise relative to the clock.

The device supports full DDR3L feature set including posted CAS with additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), write leveling, multi-purpose register (MPR) for calibration pattern readout, and ZQ calibration using external 240Ω reference resistor. All timing parameters are defined per JEDEC JESD79-3F specification.

Key Specifications

Pinout & Package

W632GU6KB15I uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm ball pitch, footprint size 9 mm × 13 mm, and standard DDR3L ball assignment per JEDEC MO-270AB. Pin functions follow industry-standard DDR3L SDRAM signal mapping with dedicated VDD, VDDQ, VSS, VSSQ, VREFCA, and VREFDQ reference pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GU6KB15I uniquely delivers DDR3L-1333 performance with integrated ASR and PASR in a drop-in 96-ball WBGA footprint, enabling lower system power, simplified thermal design, and JEDEC-compliant industrial reliability without voltage or timing trade-offs.

Availability

W632GU6KB15I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and edge AI applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GU6KB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GU6KB15I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature operation and advanced power management features.

FAQ

What is the maximum operating frequency supported by W632GU6KB15I?

W632GU6KB15I supports DDR3L-1333 operation with a maximum clock frequency of 667 MHz (1333 Mbps/pin). This corresponds to tCK(AVG) = 1.5 ns minimum for CL=9/CWL=7 configurations. The device is not rated for DDR3L-1600 or DDR3L-1866 speeds; those require -12/-12I or -11/11I speed grades respectively.

Does W632GU6KB15I support both 1.35 V and 1.5 V supply voltages?

Yes, W632GU6KB15I is fully backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V) while being optimized for 1.35 V DDR3L operation (VDD/VDDQ = 1.283 V to 1.45 V). Voltage switching between modes is supported via VDDQ/VDDQ pin control per JEDEC specification, and all AC/DC parameters are guaranteed across both voltage ranges.

What power-saving features does W632GU6KB15I implement?

W632GU6KB15I implements multiple JEDEC-standard power-saving features: Auto Self-Refresh (ASR) for automatic high-temperature refresh rate doubling, Partial Array Self-Refresh (PASR) to reduce current by refreshing only active banks, Precharge Power Down and Active Power Down modes, and dynamic ODT (Rtt_WR) to activate termination only during writes. These reduce typical IDD6 to 19 mA and enable sub-100 mW standby power in industrial environments.

How is write timing calibrated for W632GU6KB15I in high-speed systems?

W632GU6KB15I supports JEDEC-standard write leveling using its Multi-Purpose Register (MPR) and dedicated DQS strobe training sequence. The host controller issues a write leveling command, then adjusts DQS delay until the DRAM returns a known MPR pattern aligned to CK edges. This calibrates DQS-to-CK skew at the DRAM input, ensuring reliable write capture at 667 MHz without requiring board-level trace length matching.

Is W632GU6KB15I pin-compatible with other Winbond DDR3L SDRAMs in the same package?

Yes, W632GU6KB15I shares identical 96-ball WBGA pinout and signal assignment with all members of the W632GU6KB family (e.g., W632GU6KB-11, W632GU6KB12I), including identical ball configuration for CK/CK#, DQS/DQS#, RESET#, ZQ, VREFCA, and ODT. This allows direct speed-bin substitution within the same industrial temperature grade without PCB redesign.