Winbond Electronics Corporation W632GU6KB15I TR

Overview

W632GU6KB15I TR from Winbond Electronics is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), compliant with DDR3L-1333 (9-9-9) timing, and packaged in 96-ball WBGA (9 mm × 13 mm). It supports programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for embedded computing and industrial control memory subsystems.

For engineers reviewing the W632GU6KB15I TR datasheet, W632GU6KB15I TR pinout, W632GU6KB15I TR application, or W632GU6KB15I TR equivalent, key selection considerations include its DDR3L-1333 speed grade, industrial temperature rating, 16-bit data bus width, support for dynamic ODT and write leveling, and compatibility with JEDEC-standard DDR3L controllers requiring low-voltage operation and robust refresh management.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the cross-point, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

The device integrates ZQ calibration for output driver and ODT impedance tuning using an external 240 Ω reference resistor, programmable mode registers (MR0–MR3) for CAS latency, CWL, PASR, ASR, and dynamic ODT activation, and a Multi-Purpose Register (MPR) for system-level timing calibration via predefined read patterns.

Key Specifications

Pinout & Package

W632GU6KB15I TR uses a 96-ball fine-pitch wafer-level ball grid array (WBGA) package with 0.8 mm ball pitch, optimized for high-density PCB layouts and thermal performance in space-constrained industrial modules. Ball assignment follows JEDEC-standard DDR3L pinout with dedicated VDDQ/VSSQ domains for I/O power integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M16HA-125:A, W632GU6KB15I TR delivers lower active and self-refresh current at 1.35 V, enabling extended battery life and reduced thermal design complexity; versus IS43TR16256B-125KBL, it trades peak bandwidth for tighter tAA/tRCD timing at DDR3L-1333, simplifying timing closure in cost-sensitive industrial designs.

Availability

W632GU6KB15I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical diagnostic terminals, ruggedized IoT gateways, and embedded vision systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU6KB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile DRAM, serving automotive, industrial, and communications markets.

The W632GU6KB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding reliable low-voltage memory operation across –40°C to +95°C with JEDEC compliance and extended lifecycle support.

FAQ

What is the maximum operating frequency supported by W632GU6KB15I TR?

W632GU6KB15I TR supports a maximum clock frequency of 667 MHz (DDR3L-1333), delivering 1333 MT/s data transfer rate. This is confirmed in the datasheet's Key Parameters table under "fCKMAX" for the -15/15I/15J speed grades. The device achieves this with CL = 9, tRCD = 9 ns, and tRP = 9 ns timing, validated across the full industrial temperature range.

Does W632GU6KB15I TR support both DDR3L and standard DDR3 voltage levels?

Yes, W632GU6KB15I TR is backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V) while being optimized for DDR3L at 1.35 V (1.283 V to 1.45 V). Section 11 of the datasheet explicitly confirms dual-voltage support, allowing seamless integration into existing 1.5 V systems or migration to lower-power 1.35 V designs without hardware changes.

How does the ZQ calibration function work on W632GU6KB15I TR?

W632GU6KB15I TR performs ZQ calibration by referencing an external 240 Ω resistor connected to the ZQ pin to ground. During ZQCAL commands, internal circuitry adjusts output driver strength and ODT resistance values to match JEDEC-specified targets (e.g., 34 Ω for drivers, 60/120/240 Ω for ODT). This occurs at power-up, after reset, and optionally during runtime to compensate for voltage/temperature drift.

What is the purpose of the MPR (Multi-Purpose Register) in W632GU6KB15I TR?

The MPR in W632GU6KB15I TR stores a fixed 128-bit calibration pattern used during write leveling and system timing validation. When activated via MR3, the DRAM outputs this predefined sequence on DQ pins instead of normal read data, enabling the memory controller to measure and correct DQS-to-CK skew per byte lane-critical for achieving reliable high-speed signaling margins.

Can W632GU6KB15I TR operate in Partial Array Self-Refresh (PASR) mode?

Yes, W632GU6KB15I TR supports PASR via MR2 programming (bits A0–A2), allowing selective self-refresh of 1/2, 1/4, or 1/8 of the memory array. This feature reduces IDD6 current proportionally-for example, 1/4-array refresh cuts self-refresh power by ~75%-making it ideal for battery-powered or thermally constrained applications where full-array refresh is unnecessary.