Winbond Electronics Corporation W632GU6MB-09
- Part No.:
- W632GU6MB-09
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6MB-09.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,725
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Product details
Overview
W632GU6MB-09 from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), 1.35 V nominal supply, and industrial temperature range (0°C to 95°C). It features eight internal banks, 8-bit prefetch architecture, programmable CAS latency (CL = 5–14), and on-die termination for high-speed memory subsystems in embedded computing and networking equipment.
For engineers reviewing the W632GU6MB-09 datasheet, W632GU6MB-09 pinout, W632GU6MB-09 application, or W632GU6MB-09 equivalent, key selection considerations include its DDR3L-2133 timing compliance, VFBGA-96 package with 7.5 × 13 mm footprint, ZQ calibration support, asynchronous RESET# functionality, and compatibility with JEDEC-standard DDR3L controllers requiring low-voltage operation and robust signal integrity at 1066 MHz clock frequency.
Technical Context
This device implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with all commands latched on the rising edge of CK. Internal operations use an 8-bit prefetch buffer and eight independent banks to enable concurrent access and bank interleaving, reducing average latency in burst-intensive workloads.
It supports full DDR3L feature set including programmable CWL (5–10), additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and write leveling - all configurable via mode registers MR0–MR3 and controlled through standard command bus (ACT, READ, WRITE, PRE, REF, etc.).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16,777,216 words × 8 banks × 16 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133), fCKMAX = 1066 MHz |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 0.075 V |
| Timing (CL-tRCD-tRP) | 14-14-14 at 1066 MHz; supports CL = 5–14, CWL = 5–10 |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial-industrial grade) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C); 3.9 µs at extended temperature (95°C) |
| Power Management | Precharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm body size, 0.8 mm ball pitch, and RoHS-compliant lead-free finish. Ball layout follows JEDEC MO-274 standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits for bank and page access; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock | Edge-aligned command latch reference; all commands sampled on CK rising edge |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS# |
| DQS, DQS# | Differential Data Strobe | Center-aligned with write data, edge-aligned with read data; DLL-aligned to CK |
| DM0–DM1 | Data Mask | Byte-level write masking for DQ[7:0] and DQ[15:8]; active-high during WRITE |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and resets internal state |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors on DQ/DQS/DM lines per MR1/MR2 settings |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (WRITE, ACTIVATE, READ/WRITE) via 3-pin bus |
| CKE | Clock Enable | Gates internal clock domains; low enters power-down modes |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5–10, enabling precise write timing alignment across frequency bins |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to adjust output driver and ODT impedance accuracy within ±10% |
| Write Leveling | Per-lane delay adjustment via MPR read pattern to compensate for DQS-to-CK skew in high-speed layouts |
| Dynamic ODT (Rtt_WR) | Configurable termination on DQ/DQS/DM during WRITE bursts only, improving signal integrity without affecting READ paths |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern accessible via READ command for system-level timing validation |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, critical for battery-backed systems |
Applications
| Networking Equipment | Industrial HMI Controllers |
|---|---|
Use Scenario: High-throughput packet buffering and table lookups in Layer 3 switches and routers. IC Role / Device Role / Timing Role: Primary working memory interfaced to multi-core network processors with DDR3L controllers. Use Value: DDR3L-2133 bandwidth (34.1 GB/s peak) and low 1.35 V operation reduce thermal load while sustaining line-rate forwarding. | Use Scenario: Real-time UI rendering and local data logging in factory-floor HMIs with fanless enclosures. IC Role / Device Role / Timing Role: Main system memory for ARM-based SoCs running Linux with deterministic interrupt response. Use Value: 0°C–95°C operating range and PASR support extend uptime in uncooled environments without compromising refresh overhead. |
| Medical Imaging Subsystems | Automated Test Equipment (ATE) |
Use Scenario: Frame buffering and image preprocessing in portable ultrasound and X-ray digitizers. IC Role / Device Role / Timing Role: Low-power, high-reliability memory for FPGA-accelerated image pipelines with strict EMI constraints. Use Value: Asynchronous RESET# and ZQ calibration ensure deterministic initialization and stable signal integrity under variable ambient conditions. | Use Scenario: Pattern storage and result capture in high-speed digital ATE platforms with parallel channel testing. IC Role / Device Role / Timing Role: Burst-access memory for vector sequencers requiring tight tAA (13.09 ns min) and tRCD consistency. Use Value: CL-14/14-14-14 timing bin enables reliable 1066 MHz operation with margin for test fixture skew and voltage droop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:E | 2 Gb DDR3L, 125 ps tAC min, VFBGA-96, supports CL=11–14 but no PASR or ASR | Lacks partial array self-refresh and auto self-refresh; requires external refresh management above 85°C | Preferred where JEDEC-compliant timing margin is prioritized over extended-temperature power optimization |
| IS43TR16256B-125KBL | 2 Gb DDR3L, 125 ps tAC, VFBGA-96, supports CL=9–13, includes PASR but no write leveling | Missing write leveling and MPR; limited CWL range (5–8) restricts fine-grained write timing control | Selected when simplified calibration flow is acceptable and system-level DQS skew compensation is handled externally |
Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GU6MB-09 uniquely combines DDR3L-2133 performance, full JEDEC write leveling + MPR calibration, PASR, and ASR - making it optimal for thermally constrained, high-reliability embedded systems requiring autonomous power management and precise timing closure.
Availability
W632GU6MB-09 is available at Aetrix Electronics and suitable for networking equipment, industrial HMI controllers, medical imaging subsystems, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and validated DDR3L-2133 interoperability.
Supply support for W632GU6MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU6MB-09 belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with extended temperature support and advanced power management features.
FAQ
What is the maximum clock frequency supported by the W632GU6MB-09?
The W632GU6MB-09 supports a maximum clock frequency of 1066 MHz, corresponding to DDR3L-2133 data rate (2133 MT/s). This is validated under JEDEC-specified conditions with CL-tRCD-tRP = 14-14-14 and VDD/VDDQ = 1.35 V ± 6.7%. The device maintains timing compliance across its full commercial-industrial temperature range (0°C to 95°C).
Does the W632GU6MB-09 support both 1.35 V and 1.5 V operation?
Yes, the W632GU6MB-09 is fully backward-compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ± 0.075 V) while maintaining DDR3L-2133 timing specifications. Its DC operating range is 1.283 V to 1.45 V for DDR3L mode and extends to 1.5 V for legacy DDR3 compatibility, allowing seamless migration in existing 1.5 V designs without hardware changes.
How does the W632GU6MB-09 handle thermal management at elevated temperatures?
The W632GU6MB-09 supports extended temperature operation up to 95°C case temperature. At temperatures above 85°C, it doubles the auto-refresh rate (tREFI = 3.9 µS) and requires either Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 0b01) or Auto Self-Refresh (ASR) mode (MR2[7:6] = 0b1x) to maintain data retention - a capability confirmed in its datasheet revision A02.
What calibration features does the W632GU6MB-09 provide for high-speed PCB design?
The W632GU6MB-09 provides ZQ calibration for output driver and ODT impedance tuning, plus write leveling and Multi-Purpose Register (MPR) read patterns for system-level timing validation. These features allow precise DQS-to-CK skew compensation and pre-defined bit-sequence readout to verify signal integrity margins before full system bring-up.
Is the W632GU6MB-09 pin-compatible with other Winbond DDR3L SDRAMs in the same density and package?
Yes, the W632GU6MB-09 shares identical VFBGA-96 pinout, ball assignment, and command protocol with other members of the W632GU6MB family (e.g., -11, -12, -15 variants), enabling drop-in replacement across speed grades. All variants use the same 7.5 × 13 mm footprint, ball pitch, and JEDEC MO-274 mechanical specification.
W632GU6MB-09 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.067 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6MB-09 FAQ
1.How can I place an order for W632GU6MB-09 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6MB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6MB-09 reliable?
The price and inventory of W632GU6MB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6MB-09 is usually 5 days.
3.What payment methods are accepted for W632GU6MB-09?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6MB-09 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6MB-09?
W632GU6MB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6MB-09 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6MB-09?
For technical support, including W632GU6MB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6MB-09 requirements.
6.How does Aetrix verify that W632GU6MB-09 is sourced from the original manufacturer or authorized distributors?
All W632GU6MB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6MB-09 meets industry standards.
7.What is the process for return or replacement of W632GU6MB-09?
All W632GU6MB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6MB-09, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6MB-09 part is unused and in its original packaging.
Return procedure for W632GU6MB-09:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6MB-09 Tags

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