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Winbond Electronics Corporation W632GU6MB-09

Part No.:
W632GU6MB-09
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW632GU6MB-09.pdf
Description:
IC DRAM 2GBIT PAR 96VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,725

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Product details

Overview

W632GU6MB-09 from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), 1.35 V nominal supply, and industrial temperature range (0°C to 95°C). It features eight internal banks, 8-bit prefetch architecture, programmable CAS latency (CL = 5–14), and on-die termination for high-speed memory subsystems in embedded computing and networking equipment.

For engineers reviewing the W632GU6MB-09 datasheet, W632GU6MB-09 pinout, W632GU6MB-09 application, or W632GU6MB-09 equivalent, key selection considerations include its DDR3L-2133 timing compliance, VFBGA-96 package with 7.5 × 13 mm footprint, ZQ calibration support, asynchronous RESET# functionality, and compatibility with JEDEC-standard DDR3L controllers requiring low-voltage operation and robust signal integrity at 1066 MHz clock frequency.

Technical Context

This device implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with all commands latched on the rising edge of CK. Internal operations use an 8-bit prefetch buffer and eight independent banks to enable concurrent access and bank interleaving, reducing average latency in burst-intensive workloads.

It supports full DDR3L feature set including programmable CWL (5–10), additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and write leveling - all configurable via mode registers MR0–MR3 and controlled through standard command bus (ACT, READ, WRITE, PRE, REF, etc.).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (16,777,216 words × 8 banks × 16 bits)
Data Rate2133 MT/s (DDR3L-2133), fCKMAX = 1066 MHz
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 0.075 V
Timing (CL-tRCD-tRP)14-14-14 at 1066 MHz; supports CL = 5–14, CWL = 5–10
Operating Temperature0°C ≤ TCASE ≤ 95°C (commercial-industrial grade)
PackageVFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free)
Refresh IntervaltREFI = 7.8 µs (0°C–85°C); 3.9 µs at extended temperature (95°C)
Power ManagementPrecharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR)

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm body size, 0.8 mm ball pitch, and RoHS-compliant lead-free finish. Ball layout follows JEDEC MO-274 standard for DDR3L SDRAM.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address InputsRow/column address bits for bank and page access; A10 controls auto-precharge
BA0–BA2Bank AddressSelects one of eight internal banks for concurrent operation
CK, CK#Differential ClockEdge-aligned command latch reference; all commands sampled on CK rising edge
DQ0–DQ15Data I/O16-bit bidirectional data bus; source-synchronous with DQS/DQS#
DQS, DQS#Differential Data StrobeCenter-aligned with write data, edge-aligned with read data; DLL-aligned to CK
DM0–DM1Data MaskByte-level write masking for DQ[7:0] and DQ[15:8]; active-high during WRITE
RESET#Asynchronous ResetActive-low initialization trigger; initiates power-up sequence and resets internal state
ODTOn-Die Termination ControlDynamic enable/disable of termination resistors on DQ/DQS/DM lines per MR1/MR2 settings
WE#, RAS#, CAS#Command InputsStandard DDR3 command encoding (WRITE, ACTIVATE, READ/WRITE) via 3-pin bus
CKEClock EnableGates internal clock domains; low enters power-down modes

Key Features

FeatureDesign Value
Programmable CAS Write Latency (CWL)Supports CWL = 5–10, enabling precise write timing alignment across frequency bins
ZQ CalibrationOne-time or periodic calibration using external 240 Ω resistor to adjust output driver and ODT impedance accuracy within ±10%
Write LevelingPer-lane delay adjustment via MPR read pattern to compensate for DQS-to-CK skew in high-speed layouts
Dynamic ODT (Rtt_WR)Configurable termination on DQ/DQS/DM during WRITE bursts only, improving signal integrity without affecting READ paths
Multi-Purpose Register (MPR)Predefined 128-bit calibration pattern accessible via READ command for system-level timing validation
Partial Array Self-Refresh (PASR)Reduces self-refresh current up to 50% by refreshing only active banks, critical for battery-backed systems

Applications

Networking EquipmentIndustrial HMI Controllers

Use Scenario: High-throughput packet buffering and table lookups in Layer 3 switches and routers.

IC Role / Device Role / Timing Role: Primary working memory interfaced to multi-core network processors with DDR3L controllers.

Use Value: DDR3L-2133 bandwidth (34.1 GB/s peak) and low 1.35 V operation reduce thermal load while sustaining line-rate forwarding.

Use Scenario: Real-time UI rendering and local data logging in factory-floor HMIs with fanless enclosures.

IC Role / Device Role / Timing Role: Main system memory for ARM-based SoCs running Linux with deterministic interrupt response.

Use Value: 0°C–95°C operating range and PASR support extend uptime in uncooled environments without compromising refresh overhead.

Medical Imaging SubsystemsAutomated Test Equipment (ATE)

Use Scenario: Frame buffering and image preprocessing in portable ultrasound and X-ray digitizers.

IC Role / Device Role / Timing Role: Low-power, high-reliability memory for FPGA-accelerated image pipelines with strict EMI constraints.

Use Value: Asynchronous RESET# and ZQ calibration ensure deterministic initialization and stable signal integrity under variable ambient conditions.

Use Scenario: Pattern storage and result capture in high-speed digital ATE platforms with parallel channel testing.

IC Role / Device Role / Timing Role: Burst-access memory for vector sequencers requiring tight tAA (13.09 ns min) and tRCD consistency.

Use Value: CL-14/14-14-14 timing bin enables reliable 1066 MHz operation with margin for test fixture skew and voltage droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K256M16HA-125:E2 Gb DDR3L, 125 ps tAC min, VFBGA-96, supports CL=11–14 but no PASR or ASRLacks partial array self-refresh and auto self-refresh; requires external refresh management above 85°CPreferred where JEDEC-compliant timing margin is prioritized over extended-temperature power optimization
IS43TR16256B-125KBL2 Gb DDR3L, 125 ps tAC, VFBGA-96, supports CL=9–13, includes PASR but no write levelingMissing write leveling and MPR; limited CWL range (5–8) restricts fine-grained write timing controlSelected when simplified calibration flow is acceptable and system-level DQS skew compensation is handled externally

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W632GU6MB-09 uniquely combines DDR3L-2133 performance, full JEDEC write leveling + MPR calibration, PASR, and ASR - making it optimal for thermally constrained, high-reliability embedded systems requiring autonomous power management and precise timing closure.

Availability

W632GU6MB-09 is available at Aetrix Electronics and suitable for networking equipment, industrial HMI controllers, medical imaging subsystems, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and validated DDR3L-2133 interoperability.

Supply support for W632GU6MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6MB-09 belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with extended temperature support and advanced power management features.

FAQ

What is the maximum clock frequency supported by the W632GU6MB-09?

The W632GU6MB-09 supports a maximum clock frequency of 1066 MHz, corresponding to DDR3L-2133 data rate (2133 MT/s). This is validated under JEDEC-specified conditions with CL-tRCD-tRP = 14-14-14 and VDD/VDDQ = 1.35 V ± 6.7%. The device maintains timing compliance across its full commercial-industrial temperature range (0°C to 95°C).

Does the W632GU6MB-09 support both 1.35 V and 1.5 V operation?

Yes, the W632GU6MB-09 is fully backward-compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ± 0.075 V) while maintaining DDR3L-2133 timing specifications. Its DC operating range is 1.283 V to 1.45 V for DDR3L mode and extends to 1.5 V for legacy DDR3 compatibility, allowing seamless migration in existing 1.5 V designs without hardware changes.

How does the W632GU6MB-09 handle thermal management at elevated temperatures?

The W632GU6MB-09 supports extended temperature operation up to 95°C case temperature. At temperatures above 85°C, it doubles the auto-refresh rate (tREFI = 3.9 µS) and requires either Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 0b01) or Auto Self-Refresh (ASR) mode (MR2[7:6] = 0b1x) to maintain data retention - a capability confirmed in its datasheet revision A02.

What calibration features does the W632GU6MB-09 provide for high-speed PCB design?

The W632GU6MB-09 provides ZQ calibration for output driver and ODT impedance tuning, plus write leveling and Multi-Purpose Register (MPR) read patterns for system-level timing validation. These features allow precise DQS-to-CK skew compensation and pre-defined bit-sequence readout to verify signal integrity margins before full system bring-up.

Is the W632GU6MB-09 pin-compatible with other Winbond DDR3L SDRAMs in the same density and package?

Yes, the W632GU6MB-09 shares identical VFBGA-96 pinout, ball assignment, and command protocol with other members of the W632GU6MB family (e.g., -11, -12, -15 variants), enabling drop-in replacement across speed grades. All variants use the same 7.5 × 13 mm footprint, ball pitch, and JEDEC MO-274 mechanical specification.

W632GU6MB-09 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
Parallel
Clock Frequency:
1.067 GHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W632GU6MB-09 FAQ

1.How can I place an order for W632GU6MB-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6MB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6MB-09 reliable?

The price and inventory of W632GU6MB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6MB-09 is usually 5 days.

3.What payment methods are accepted for W632GU6MB-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6MB-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6MB-09?

W632GU6MB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6MB-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6MB-09?

For technical support, including W632GU6MB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6MB-09 requirements.

6.How does Aetrix verify that W632GU6MB-09 is sourced from the original manufacturer or authorized distributors?

All W632GU6MB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6MB-09 meets industry standards.

7.What is the process for return or replacement of W632GU6MB-09?

All W632GU6MB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6MB-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6MB-09 part is unused and in its original packaging.

Return procedure for W632GU6MB-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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