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Winbond Electronics Corporation W632GU6MB09I
- Part No.:
- W632GU6MB09I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6MB09I.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,021
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Product details
Overview
W632GU6MB09I from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature support (–40°C to +95°C), delivering 2133 MT/s data rates (DDR3L-2133, CL=14), and featuring on-die termination, ZQ calibration, and programmable CAS Write Latency for use in embedded controllers and industrial SoC memory subsystems.
For engineers reviewing the W632GU6MB09I datasheet, W632GU6MB09I pinout, W632GU6MB09I application, or W632GU6MB09I equivalent, key selection considerations include its DDR3L-2133 speed grade, industrial temperature range, VFBGA-96 package, 16-bit bus width, and support for write leveling and multi-purpose register (MPR) calibration.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable CWL per frequency bin.
The device integrates asynchronous RESET# for power-up initialization, dynamic ODT (Rtt_WR) for write-time termination control, partial array self-refresh (PASR), auto self-refresh (ASR), and ZQ calibration using an external 240 Ω resistor to ground - all compliant with JEDEC JESD79-3F specification for DDR3L.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M words × 8 banks × 16 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133, tCK = 0.938 ns min) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C (industrial grade) |
| CAS Latency | CL = 14 (for DDR3L-2133), also supports CL = 5–11, 13 |
| CAS Write Latency | CWL = 10 (for DDR3L-2133), also supports CWL = 5–9 |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
Pinout & Package
VFBGA-96 package with 0.8 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-275AC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address for bank and page access; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock | Commands latched at rising CK / falling CK# crossing; defines timing reference |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers referenced to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe; edge-aligned with read data, center-aligned with write data |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; suppresses write data per nibble |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1 % external resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Write Leveling Support | Enables system-level timing calibration by adjusting DQS-to-CK skew during initialization |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern for readout to verify system timing margins and DQ/DQS alignment |
| Dynamic ODT (Rtt_WR) | Activates on-die termination only during write bursts, improving signal integrity without affecting read paths |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active memory banks, extending battery life |
| Programmable Additive Latency | AL = 0, CL−1, or CL−2 allows optimization of command bus efficiency under varying controller timing constraints |
Applications
| Industrial HMI Controllers | Medical Imaging Systems |
|---|---|
Use Scenario: Real-time display rendering and touch response in panel-mounted HMIs deployed in factory automation environments. IC Role / Device Role / Timing Role: Primary system memory buffer interfacing with ARM Cortex-A series processors via 16-bit DDR3L bus. Use Value: Industrial temperature rating (–40°C to +95°C) ensures reliable operation in uncontrolled ambient conditions without thermal throttling. | Use Scenario: Frame buffering and image preprocessing in portable ultrasound and X-ray console units. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory supporting burst-intensive pixel pipeline operations. Use Value: DDR3L-2133 speed grade delivers 34.1 GB/s peak bandwidth, enabling real-time 4K image streaming with minimal frame latency. |
| Ruggedized Network Edge Routers | Automated Test Equipment (ATE) |
Use Scenario: Packet buffering and lookup table storage in fanless, conduction-cooled edge routers for outdoor telecom cabinets. IC Role / Device Role / Timing Role: Dual-rank memory subsystem component supporting ECC-capable memory controllers. Use Value: VDD/VDDQ = 1.35 V operation reduces power dissipation by ~15 % vs. standard DDR3, critical for sealed thermal envelopes. | Use Scenario: High-speed waveform capture and pattern generation in modular PXI-based test platforms. IC Role / Device Role / Timing Role: On-board memory for digital pattern storage and real-time comparison logic. Use Value: Write leveling and MPR calibration features simplify board-level timing closure across variable trace lengths and signal integrity conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-125KBL | 16-bit DDR3L, 2 Gb, DDR3L-1600 (CL=11), VFBGA-96, –40°C to +95°C | Lower max data rate (1600 MT/s); higher tRCD/tRP (11 ns vs. 14 ns) | Select when system clock budget limits tCK to ≥1.25 ns and lower power at reduced bandwidth is acceptable. |
| MT41K128M16HA-125:E | 16-bit DDR3L, 2 Gb, DDR3L-1600 (CL=11), FBGA-96, –40°C to +95°C | Micron part with different ZQ calibration behavior and no PASR support; requires updated SPD programming | Choose for established Micron design ecosystems where JEDEC compliance and long-term availability are prioritized over advanced power features. |
Compared with W632GU6MB09I, the IS43TR16256B-125KBL offers identical package and temperature but trades 2133 MT/s performance for lower IDD0/IDD1 current, while the MT41K128M16HA-125:E provides proven industrial qualification but lacks PASR and dynamic ODT flexibility - making W632GU6MB09I optimal for bandwidth-constrained, thermally demanding embedded systems requiring fine-grained power control.
Availability
W632GU6MB09I is available at Aetrix Electronics and suitable for industrial HMI controllers, medical imaging systems, ruggedized network edge routers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU6MB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU6MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, low-voltage compatibility, and JEDEC-compliant power management features such as PASR and ASR.
FAQ
What is the maximum data rate supported by W632GU6MB09I?
W632GU6MB09I supports DDR3L-2133 operation with a maximum data transfer rate of 2133 MT/s, corresponding to a clock period (tCK) of 0.938 ns minimum. This is validated for the -09I speed grade under industrial temperature conditions (–40°C to +95°C) and requires CL=14, CWL=10 timing settings per JEDEC JESD79-3F.
Does W632GU6MB09I support backward compatibility with standard DDR3 voltage levels?
Yes, W632GU6MB09I supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L) with VDD/VDDQ ranging from 1.283 V to 1.45 V, and is fully backward compatible with 1.5 V ± 0.075 V DDR3 systems. Voltage switching between modes is controlled via mode register MR1 bit A12 and must be performed during precharge power-down state.
How does the ZQ calibration function work on W632GU6MB09I?
W632GU6MB09I uses the ZQ pin to connect to a 240 Ω ±1 % external resistor to ground, enabling on-die calibration of output driver strength and ODT impedance. ZQ calibration commands (ZQCL and ZQCS) adjust internal current sources to maintain 34 Ω (nominal) output drive and 40/60/120 Ω ODT values across voltage and temperature variations, ensuring signal integrity in high-speed layouts.
What is the purpose of the Multi-Purpose Register (MPR) in W632GU6MB09I?
The MPR in W632GU6MB09I outputs a fixed 128-bit pattern (0x0000000000000000FFFFFFFFFFFFFFFF) on DQ pins during MPR read mode. This known pattern enables system-level timing margin verification - particularly for DQ-to-DQS setup/hold windows - and supports automated calibration routines like write leveling without requiring user-defined data patterns.
Can W632GU6MB09I operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU6MB09I supports PASR via MR2 register configuration (bits A0–A2), allowing refresh cycles to target only selected banks (1/2/4/8 banks). This reduces self-refresh current (IDD6) proportionally - e.g., refreshing half the array cuts IDD6 by ~40 % - which is critical for battery-powered or thermally constrained applications where full-array refresh is unnecessary.
W632GU6MB09I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.067 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6MB09I FAQ
1.How can I place an order for W632GU6MB09I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6MB09I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6MB09I reliable?
The price and inventory of W632GU6MB09I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6MB09I is usually 5 days.
3.What payment methods are accepted for W632GU6MB09I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6MB09I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6MB09I?
W632GU6MB09I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6MB09I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6MB09I?
For technical support, including W632GU6MB09I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6MB09I requirements.
6.How does Aetrix verify that W632GU6MB09I is sourced from the original manufacturer or authorized distributors?
All W632GU6MB09I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6MB09I meets industry standards.
7.What is the process for return or replacement of W632GU6MB09I?
All W632GU6MB09I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6MB09I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6MB09I part is unused and in its original packaging.
Return procedure for W632GU6MB09I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6MB09I Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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Microchip Technology
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