Winbond Electronics Corporation W632GU6MB-11

Overview

W632GU6MB-11 from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1866 MT/s (DDR3L-1866, CL13-13-13), with 1.35V nominal supply, 8 internal banks, and VFBGA-96 (7.5 × 13 mm) packaging. It serves as main memory in embedded computing, industrial HMIs, and network edge devices requiring low-voltage, high-bandwidth data buffering.

For engineers reviewing the W632GU6MB-11 datasheet, W632GU6MB-11 pinout, W632GU6MB-11 application, or W632GU6MB-11 equivalent, this page delivers verified timing parameters (tRCD = 13.91 ns max), ODT configuration options (RTT_NOM = 60 Ω, RTT_WR = 120 Ω), ZQ calibration support, and industrial-grade thermal operation (0°C to 95°C case temperature).

Technical Context

This DDR3L SDRAM implements a double-data-rate architecture with 8-bit prefetch, synchronous command decoding on CK/CK# differential clocks, and source-synchronous DQS/DQS# strobes aligned to read/write data edges. It supports programmable CAS Latency (CL = 5–13), additive latency (AL = 0, CL−1, CL−2), and posted CAS for bus efficiency.

Key control features include asynchronous RESET#, dynamic on-die termination (ODT) with Rtt_WR during writes, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DQ-DQS skew compensation. All timing complies with JEDEC DDR3L standard JESD79-3F for DDR3L-1866 speed bin.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, and NC balls per datasheet Section 5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, the W632GU6MB-11 offers tighter 1.35V-specific power optimization and lower IDD0/IDD6 at 0°C–95°C, making it more suitable for thermally constrained embedded systems where voltage headroom and standby current are critical design constraints.

Availability

W632GU6MB-11 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging front-ends, and automotive ADAS vision preprocessors requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L performance.

Supply support for W632GU6MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile LPDRAM.

The W632GU6MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with industrial temperature support.

FAQ

What is the maximum clock frequency supported by the W632GU6MB-11?

The W632GU6MB-11 supports a maximum data transfer rate of 1866 MT/s, corresponding to a 933 MHz differential clock frequency (tCK = 1.07 ns minimum). This is validated per JEDEC DDR3L-1866 specification (CL13-13-13 timing) and confirmed in the device's speed bin documentation. The W632GU6MB-11 achieves this performance within its specified 0°C to 95°C case temperature range and 1.283 V–1.45 V VDD/VDDQ supply window.

Does the W632GU6MB-11 support both DDR3 and DDR3L voltage levels?

Yes, the W632GU6MB-11 is backward compatible with standard 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V), while being fully specified for DDR3L operation at 1.35 V nominal (1.283 V–1.45 V). This dual-voltage capability allows seamless migration from legacy DDR3 designs and simplifies board-level power architecture when coexisting with mixed-voltage components. The W632GU6MB-11 maintains full AC/DC parameter compliance across both voltage modes.

How does the W632GU6MB-11 implement on-die termination (ODT)?

The W632GU6MB-11 provides programmable on-die termination with two primary modes: synchronous ODT (RTT_NOM = 60 Ω, 120 Ω, or 40 Ω) controlled via MR1, and dynamic ODT (Rtt_WR = 120 Ω) activated automatically during write operations via the ODT pin. This dual-mode ODT scheme minimizes stub reflections on high-speed DQ/DQS lines while reducing static power consumption compared to always-on termination. The W632GU6MB-11 uses ZQ calibration to maintain impedance accuracy within ±5% across voltage and temperature.

What is the purpose of the Multi-Purpose Register (MPR) in the W632GU6MB-11?

The MPR in the W632GU6MB-11 stores a fixed 128-bit calibration pattern used exclusively for system-level timing margin verification and write leveling training. When accessed via MRS command, the MPR outputs this predefined bit sequence on DQ pins, allowing the memory controller to measure DQ-to-DQS skew and adjust delay taps accordingly. Unlike general-purpose registers, the MPR is read-only and not user-programmable - its sole function is to support robust DDR3L interface initialization. The W632GU6MB-11 implements MPR per JEDEC JESD79-3F Section 8.10.

Can the W632GU6MB-11 operate in Partial Array Self Refresh (PASR) mode?

Yes, the W632GU6MB-11 supports PASR via MR2 programming (bits A0–A2), enabling selective self-refresh of 1/2, 1/4, or 1/8 of the total memory array. This feature reduces self-refresh current (IDD6) proportionally - e.g., 1/4-array refresh cuts IDD6 from 11 mA to ~2.75 mA - which is critical for battery-powered or thermally limited applications. PASR is fully compliant with JEDEC DDR3L specification and requires no external circuitry. The W632GU6MB-11 implements PASR as described in Section 8.3.3.1 of its datasheet.