Winbond Electronics Corporation W632GU6MB11I

Overview

W632GU6MB11I from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1866 MT/s (DDR3L-1866, CL13-13-13), with 1.35V nominal supply, industrial temperature range (−40°C to +95°C), and VFBGA-96 package. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring low-voltage, high-bandwidth DRAM with robust refresh and power-down modes.

For engineers reviewing the W632GU6MB11I datasheet, W632GU6MB11I pinout, W632GU6MB11I application, or W632GU6MB11I equivalent, key selection considerations include its DDR3L-1866 speed grade, industrial temperature support, programmable CAS Write Latency (CWL=7), on-die termination (RTT_NOM/RTT_WR), ZQ calibration, and asynchronous RESET# for reliable initialization in harsh environments.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# and DQS/DQS# interfaces, and DLL-based timing alignment. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multiple power-down states including precharged and active power-down.

Functional features include programmable mode registers (MR0–MR3) for CAS latency (CL = 5–13), CWL (5–7), ODT settings (RTT_NOM, RTT_WR), partial array self-refresh (PASR), and write leveling. The device uses a 2K-byte page size and supports both synchronous and dynamic ODT modes for signal integrity optimization during reads and writes.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and standard DDR3L ball assignment per JEDEC JESD79-3F. Ball layout supports x16 data interface, 14-bit address/command bus (A0–A13, BA0–BA2), differential clocks (CK/CK#), differential strobes (DQS/DQS#, DQSn/DQSn#), and dedicated ODT/RESET#/ZQ pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W632GU6MB11I, MT41K128M16JT-125:K offers broader vendor support but mandates layout changes, while IS43TR16256B-125KBL provides drop-in mechanical compatibility but sacrifices write leveling and PASR - making W632GU6MB11I optimal for thermally demanding, high-signal-integrity applications requiring minimal design iteration.

Availability

W632GU6MB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU6MB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based global supplier of specialty memory and microcontrollers, founded in 1987 and publicly listed since 1995. It focuses on high-reliability, low-power, and application-optimized semiconductor solutions.

W632GU6MB11I belongs to Winbond's W632GU6MB DDR3L SDRAM product line, designed specifically for industrial and networking applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity features such as write leveling and dynamic ODT.

FAQ

What is the maximum data rate supported by W632GU6MB11I?

W632GU6MB11I supports a maximum data rate of 1866 MT/s, corresponding to the DDR3L-1866 speed grade with CL13-13-13 timing. This is validated at VDD/VDDQ = 1.283 V to 1.45 V and −40°C ≤ TCASE ≤ +95°C. The device achieves this using a 1.07 ns minimum clock period (tCK) and full JEDEC-compliant AC timing parameters for the -11I speed suffix.

Does W632GU6MB11I support backward compatibility with standard 1.5V DDR3 systems?

Yes, W632GU6MB11I supports backward compatibility with 1.5V DDR3 systems. Its VDD/VDDQ rails accept 1.5V ±0.075V operation per JEDEC JESD79-3F, enabling use in legacy 1.5V platforms without level-shifting. However, when operated at 1.5V, it retains DDR3L-1866 timing specifications and does not revert to DDR3-1866 voltage thresholds - full functionality remains intact.

How does the ZQ calibration function work on W632GU6MB11I?

W632GU6MB11I uses a single ZQ pin connected to a 240 Ω ±1 % external resistor to ground. Upon receiving a ZQCL (ZQ Calibration Long) command, the device measures this reference and trims its 34 Ω output driver and ODT impedances to match within ±10 % tolerance. Calibration occurs at power-up and can be re-executed dynamically to compensate for voltage/temperature drift, ensuring consistent signal integrity across operating conditions.

What power-saving features are implemented in W632GU6MB11I?

W632GU6MB11I implements multiple power-saving features: Precharged Power Down and Active Power Down modes reduce IDD to <15 mA; Normal Temperature Self-Refresh (IDD6 ≤ 11 mA); Partial Array Self-Refresh (PASR) cuts self-refresh current by up to 50 % when only selected banks are active; and Auto Self-Refresh (ASR) extends refresh interval at high temperatures without host intervention - all critical for energy-constrained industrial deployments.

Is W632GU6MB11I pin-compatible with other Winbond DDR3L SDRAMs in the same family?

Yes, W632GU6MB11I shares identical VFBGA-96 pinout, ball assignment, and electrical interface with all members of the W632GU6MB family (e.g., W632GU6MB-09, W632GU6MB11J, W632GU6MB-12). Differences are limited to speed grade, temperature rating, and internal binning - allowing direct substitution within the same package variant without PCB modification, provided timing and thermal requirements are met.