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Winbond Electronics Corporation W632GU6MB-12 TR
- Part No.:
- W632GU6MB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6MB-12 TR.pdf
- Description:
- IC DRAM 2GBIT PARALLEL 96VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W632GU6MB-12 TR from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) timing, supporting CAS Latency 5–11 and CWL 5–8, and designed for high-bandwidth memory subsystems in industrial computing and embedded controllers.
For engineers reviewing the W632GU6MB-12 TR datasheet, W632GU6MB-12 TR pinout, W632GU6MB-12 TR application, or W632GU6MB-12 TR equivalent, this device requires attention to its VFBGA-96 package, differential clock/strobe interface, programmable ODT, ZQ calibration, and temperature-grade-specific refresh behavior across 0°C to 95°C operation.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, DLL-aligned DQ/DQS timing, and source-synchronous double-data-rate I/O referenced to differential CK/CK# and DQS/DQS#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization.
Functional features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-DQS skew compensation, and ZQ calibration using an external 240 Ω resistor to ground for output driver and ODT impedance tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M words × 8 banks × 16 bits) |
| Data Rate | 1600 MT/s (DDR3L-1600, fCK = 800 MHz) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11 (CL = 13/14 not supported in -12 speed grade) |
| CAS Write Latency | Programmable CWL = 5, 6, 7, 8 (CWL = 9/10 not supported) |
| Timing Parameters | tRCD/tRP/tAA min = 13.75 ns (11-11-11 bin); tRC = 48.75 ns; tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Ball layout follows JEDEC MO-275AC standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address inputs for bank and memory location selection; A10 used for auto-precharge control |
| BA0–BA2 | Bank Address | Selects one of eight internal banks during ACT, READ, WRITE, or PRE commands |
| CK / CK# | Differential Clock | Edge-triggered command/address latch reference; inputs sampled at crosspoint (CK↑, CK#↓) |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; synchronized to DQS/DQS# edges in source-synchronous mode |
| DQS / DQS# | Differential Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; active-high, sampled on DQS rising edge |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and functional reset independent of clock |
| ODT | On-Die Termination Control | Dynamic enable/disable of programmable termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command signals defining READ, WRITE, ACT, PRE, REF, MRS operations |
Key Features
| Feature | Design Value |
|---|---|
| Programmable ODT | Configurable termination impedances (RTT_NOM = 60/120/40 Ω; RTT_WR = 60/120 Ω) for improved signal integrity on DQ/DQS/DM lines |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to adjust output driver strength and ODT resistance over voltage/temperature |
| Write Leveling | Hardware-assisted DQ-DQS timing alignment via MPR read pattern and delay adjustment per byte lane, essential for reliable high-speed writes |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern accessible via MRS; enables system-level timing margin verification without memory access |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks, extending battery life in portable or low-power embedded systems |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time deterministic control logic execution with burst data logging in programmable logic controllers. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU with AXI/AHB bus bridge; operates at DDR3L-1600 with CL=7 for balanced latency/bandwidth. Use Value: 1.35 V operation reduces system power by ~15% vs. 1.5 V DDR3; PASR and low IDD6 (11 mA) extend uptime in fanless enclosures. | Use Scenario: High-throughput buffering of ultrasound or X-ray image frames before compression and transmission. IC Role / Device Role / Timing Role: Dual-channel frame buffer supporting simultaneous capture and display pipelines; configured with BL8 interleaved bursts and dynamic ODT for clean write transitions. Use Value: 16-bit bus width and 1600 MT/s rate deliver 3.2 GB/s peak bandwidth; write leveling ensures <±50 ps DQ-DQS skew at 800 MHz clock. |
| Automotive ADAS Camera Hub | Network Appliance Packet Buffer |
Use Scenario: Aggregation and preprocessing of multi-camera video streams in driver assistance ECUs. IC Role / Device Role / Timing Role: Shared memory resource for SoC vision processor and DSP co-processor; uses ASR mode with extended temperature support up to 95°C ambient. Use Value: Industrial temperature grade (-40°C to +95°C) and robust ODT switching ensure stable operation under automotive thermal cycling; ZQ calibration maintains signal fidelity across voltage droop events. | Use Scenario: Deep packet inspection and flow classification in enterprise firewalls and SD-WAN gateways. IC Role / Device Role / Timing Role: High-throughput packet buffer for network processors; configured with auto-precharge, posted CAS, and AL=1 to maximize command efficiency under random access patterns. Use Value: 8-bank concurrency enables parallel access to multiple packet queues; low tRC (48.75 ns) allows rapid row activation across banks for latency-sensitive forwarding decisions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125K | Same density, VFBGA-96, DDR3L-1600; supports CL=5–11 but requires 1.5 V for full CL=11 timing; no PASR support | Targeted at commercial-temp systems; lacks extended temperature self-refresh modes and ASR capability | Choose when full JEDEC compliance at 1.5 V is required and industrial temp range is not needed |
| IS43TR16128B-125KBL | Identical pinout and DDR3L-1600 spec; supports same CL/CWL ranges; includes enhanced ZQ calibration algorithm and lower IDD0 (115 mA) | Optimized for ultra-low-power standby; offers deeper power-down states but no MPR functionality | Prefer for battery-backed or energy-constrained designs where MPR-based calibration is not required |
Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W632GU6MB-12 TR uniquely combines industrial temperature support (0°C–95°C), PASR, ASR, and MPR-based system calibration-making it optimal for thermally demanding embedded systems requiring both reliability and timing margin validation.
Availability
W632GU6MB-12 TR is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging devices, automotive ADAS camera hubs, and network appliance packet buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU6MB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU6MB series belongs to Winbond's DDR3L SDRAM product line, engineered for cost-effective, low-voltage memory expansion in space-constrained embedded systems requiring JEDEC-compliant timing, robust thermal performance, and advanced calibration features.
FAQ
What is the operating temperature range for W632GU6MB-12 TR?
The W632GU6MB-12 TR is rated for 0°C ≤ TCASE ≤ 95°C operation. It meets full JEDEC AC/DC specifications across this range, with mandatory doubling of auto-refresh frequency (tREFI = 3.9 µS) above 85°C. The part does not support -40°C operation-industrial-grade variants use suffixes "12I" or "12J" instead of "-12".
Does W632GU6MB-12 TR support backward compatibility with 1.5 V DDR3 systems?
Yes, W632GU6MB-12 TR supports 1.5 V ± 0.075 V operation for backward compatibility with legacy DDR3 controllers. However, at 1.5 V, maximum supported speed is DDR3L-1333 (9-9-9), and CL=11 is not guaranteed. Full DDR3L-1600 (11-11-11) performance requires 1.283–1.45 V supply.
How is ZQ calibration implemented on W632GU6MB-12 TR?
W632GU6MB-12 TR performs ZQ calibration using an external 240 Ω ±1 % resistor connected between ZQ pin and ground. Calibration adjusts both output driver strength and on-die termination (ODT) resistances to maintain impedance accuracy across voltage and temperature. It supports one-time power-up calibration and periodic recalibration via ZQINIT and ZQCL commands.
What CAS Latency and CWL settings are valid for W632GU6MB-12 TR at DDR3L-1600 speed?
For W632GU6MB-12 TR in DDR3L-1600 mode, supported CAS Latency values are CL = 5, 6, 7, 8, 9, 10, 11; supported CAS Write Latency values are CWL = 5, 6, 7, 8. CL=13/14 and CWL=9/10 are not supported in the -12 speed grade per datasheet Table 4.
Can W632GU6MB-12 TR be used in systems requiring Partial Array Self Refresh (PASR)?
Yes, W632GU6MB-12 TR supports PASR via MR2 bitfield A2–A0, allowing selective self-refresh of 1/2, 1/4, or 1/8 of total memory array. This feature reduces IDD6 current during idle periods-critical for battery-powered or thermally constrained applications where full-array self-refresh would exceed thermal or power budgets.
W632GU6MB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6MB-12 TR FAQ
1.How can I place an order for W632GU6MB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6MB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6MB-12 TR reliable?
The price and inventory of W632GU6MB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6MB-12 TR is usually 5 days.
3.What payment methods are accepted for W632GU6MB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6MB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6MB-12 TR?
W632GU6MB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6MB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6MB-12 TR?
For technical support, including W632GU6MB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6MB-12 TR requirements.
6.How does Aetrix verify that W632GU6MB-12 TR is sourced from the original manufacturer or authorized distributors?
All W632GU6MB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6MB-12 TR meets industry standards.
7.What is the process for return or replacement of W632GU6MB-12 TR?
All W632GU6MB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6MB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6MB-12 TR part is unused and in its original packaging.
Return procedure for W632GU6MB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6MB-12 TR Tags
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M24C02-WMN6TP
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