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Winbond Electronics Corporation W632GU6MB15I

Part No.:
W632GU6MB15I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW632GU6MB15I.pdf
Description:
IC DRAM 2GBIT PAR 96VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,640

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Product details

Overview

W632GU6MB15I from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at DDR3L-1333 speed (9-9-9 CL-tRCD-tRP), rated for -40°C to +95°C industrial temperature range, with 1.35 V nominal supply (1.283–1.45 V), and packaged in 96-ball VFBGA (7.5 × 13 mm). It supports programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded controllers and industrial gateways.

For engineers reviewing the W632GU6MB15I datasheet, W632GU6MB15I pinout, W632GU6MB15I application, or W632GU6MB15I equivalent, this page delivers verified timing parameters, ball configuration, ODT behavior, thermal operating limits, and JEDEC-compliant DDR3L-1333 functional compatibility - critical for memory interface validation, PCB layout sign-off, and long-life industrial BOM planning.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, supporting burst lengths of 8 (BL8) and burst chop 4 (BC4), programmable read burst ordering (interleaved/nibble sequential), and posted CAS with additive latency (AL = 0, CL−1, CL−2). Its DLL aligns DQ/DQS transitions to CK/CK#, enabling precise source-synchronous data capture at up to 1333 MT/s.

It features dual-mode ODT (synchronous and dynamic), ZQ calibration for output driver and termination impedance tracking, Multi-Purpose Register (MPR) for system-level timing calibration, and write leveling for per-lane DQS-to-DQ skew compensation - all essential for robust high-speed memory channel design in constrained thermal environments.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (16M words × 8 banks × 16 bits)
Data RateDDR3L-1333 (1333 MT/s, tCK = 1.5 ns min)
CAS LatencyCL = 5, 6, 7, 8, 9, or 10 (JEDEC-compliant 9-9-9 timing)
CAS Write LatencyCWL = 5, 6, or 7 (WL = AL + CWL; AL = 0, CL−1, CL−2)
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 0.075 V
Operating Temp-40°C ≤ TCASE ≤ 95°C (industrial grade, full JEDEC spec compliance)
PackageVFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS/lead-free)
Refresh IntervaltREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C); supports Auto Self-Refresh (ASR)

Pinout & Package

VFBGA-96 package (7.5 × 13 mm, 1.0 mm height) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction per JEDEC MO-276AB.

Pin/TerminalCircuit RoleDesign Meaning
A0–A13Address InputsRow/column address inputs for bank and memory location selection
BA0–BA2Bank AddressSelects one of eight internal banks during command decode
CK, CK#Differential ClockEdge-triggered command/address latch reference; defines timing window
DQ0–DQ15Data I/O16-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS#
DQS, DQS#Differential StrobeSource-synchronous strobe for read/write data capture; center-aligned on write, edge-aligned on read
DM0–DM1Data MaskByte-level write masking for DQ[7:0] and DQ[15:8]; active-high during write
RESET#Asynchronous ResetActive-low signal initiating power-up initialization or functional reset independent of clock
ODTOn-Die Termination ControlDynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM
WE#, RAS#, CAS#Command InputsStandard DDR3 command signals decoded with A0–A13/BA0–BA2 on CK rising edge
VDD, VDDQPower SuppliesSeparate 1.35 V supplies for core (VDD) and I/O (VDDQ); decoupling required per JEDEC

Key Features

FeatureDesign Value
Programmable CWLSupports CWL = 5, 6, 7 per frequency bin - enables optimal write timing margin tuning across voltage/temperature
ZQ CalibrationOne-time or periodic calibration using external 240 Ω ±1% resistor to ground - maintains output driver and ODT impedance accuracy over process/voltage/temp
Dynamic ODT (Rtt_WR)Configurable termination during write bursts only - improves signal integrity without impacting read eye opening
Write LevelingPer-lane DQS-to-DQ delay adjustment via MPR read pattern - compensates for board trace skew in multi-drop or fly-by topologies
Partial Array Self Refresh (PASR)Reduces self-refresh current by refreshing only selected banks - extends battery life in low-power standby modes
Multi-Purpose Register (MPR)Predefined 128-bit calibration pattern accessible via MRS - enables automated system-level timing margin testing without external pattern generator

Applications

Industrial PLC Memory BufferMedical Imaging Data Cache

Use Scenario: Real-time motion control logic in programmable logic controllers requires deterministic memory access with guaranteed availability across wide ambient temperatures.

IC Role / Device Role / Timing Role: W632GU6MB15I serves as main working memory buffer, interfacing directly with ARM Cortex-M7 or RISC-V SoCs via 16-bit DDR3L bus.

Use Value: Its -40°C to +95°C rating, 9-9-9 timing stability, and ASR support ensure uninterrupted operation during thermal cycling in factory-floor enclosures.

Use Scenario: Portable ultrasound systems demand low-power, high-reliability memory for real-time frame buffering and image reconstruction pipelines.

IC Role / Device Role / Timing Role: W632GU6MB15I provides burst-accessible frame storage for FPGA-accelerated image processing engines.

Use Value: Dynamic ODT and write leveling reduce signal integrity risk on compact 4-layer PCBs, while PASR cuts self-refresh current to <11 mA for extended battery runtime.

Smart Energy Meter ControllerRuggedized Edge Gateway

Use Scenario: Utility-grade smart meters operate unattended for 15+ years in outdoor cabinets exposed to extreme seasonal temperature swings.

IC Role / Device Role / Timing Role: W632GU6MB15I stores firmware execution code and encrypted metering logs in a secure, thermally stable memory subsystem.

Use Value: Backward 1.5 V compatibility allows reuse of legacy DDR3 designs, while 1.35 V operation reduces system power dissipation and thermal stress on surrounding components.

Use Scenario: Industrial IoT gateways aggregate sensor data from multiple field buses and forward it to cloud platforms via LTE/Wi-Fi.

IC Role / Device Role / Timing Role: W632GU6MB15I acts as shared memory between application processor and network co-processor, handling protocol translation and packet buffering.

Use Value: VFBGA-96 package enables high-density routing on space-constrained carrier boards, and RESET# pin ensures clean recovery after brown-out events common in remote deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS43TR16256B-15KLISame density (2 Gb), same VFBGA-96 package, identical DDR3L-1333 (9-9-9) timing, but supports only CL = 5–9 and CWL = 5–6; no PASR or MPRLacks partial array self-refresh and MPR-based calibration - less suitable for battery-powered or high-margin timing validation use casesPreferred where cost sensitivity outweighs advanced power/timing features and JEDEC compliance is limited to basic operation
MT41K128M16JT-125K2 Gb DDR3L, 96-ball VFBGA, DDR3L-1600 (11-11-11) base speed; requires derating to DDR3L-1333; supports CL = 5–11, CWL = 5–8, and full JEDEC DDR3L feature set including PASR, MPR, and write levelingHigher speed grade enables future-proofing and margin headroom; wider CL/CWL range offers greater flexibility in timing closureRecommended when design requires proven longevity, broad vendor support, and compatibility with Micron's long-term lifecycle roadmap

Compared with IS43TR16256B-15KLI, W632GU6MB15I adds PASR and MPR for enhanced power efficiency and system-level calibration; versus MT41K128M16JT-125K, it trades speed margin for tighter thermal specification and lower unit cost in industrial volume production.

Availability

W632GU6MB15I is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, smart grid infrastructure, and ruggedized edge computing applications requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W632GU6MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, JEDEC compliance, and long-term supply assurance.

FAQ

What is the maximum operating frequency supported by W632GU6MB15I?

W632GU6MB15I is rated for DDR3L-1333 operation, with a maximum clock frequency (fCK) of 667 MHz (1333 MT/s). Its tCK(AVG) minimum is 1.5 ns for CL=9/CWL=7 configurations, and it supports down-binned operation at lower frequencies with adjusted CAS latency settings per JEDEC specifications.

Does W632GU6MB15I support both 1.35 V and 1.5 V supply voltages?

Yes, W632GU6MB15I operates at 1.35 V nominal (1.283–1.45 V range) for DDR3L mode and is fully backward-compatible with 1.5 V ± 0.075 V DDR3 systems. Voltage switching between modes is supported via VDD/VDDQ control, and all DC/AC parameters remain compliant under both conditions per JEDEC JESD79-3F.

How does the RESET# pin function in W632GU6MB15I?

The RESET# pin in W632GU6MB15I is asynchronous and active-low. It initiates power-up initialization sequence or functional reset regardless of clock state, ensuring deterministic memory state recovery after power-on or brown-out events - a key requirement for fail-safe industrial control systems using W632GU6MB15I.

What termination options are available on W632GU6MB15I?

W632GU6MB15I supports programmable on-die termination (ODT) with synchronous and dynamic modes. RTT_NOM values include 75 Ω, 150 Ω, and 50 Ω; RTT_WR (dynamic ODT) supports 120 Ω and 60 Ω. These are configured via MR1/MR2 registers and applied to DQ, DQS/DQS#, and DM pins to match transmission line impedance and suppress reflections.

Is write leveling supported on W632GU6MB15I?

Yes, W632GU6MB15I supports write leveling per JEDEC DDR3L specification. It uses the Multi-Purpose Register (MPR) to output a predefined bit pattern, allowing the memory controller to measure DQS-to-DQ skew and adjust per-lane delays - critical for timing closure in high-speed, multi-drop DDR3L interfaces using W632GU6MB15I.

W632GU6MB15I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W632GU6MB15I FAQ

1.How can I place an order for W632GU6MB15I through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6MB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6MB15I reliable?

The price and inventory of W632GU6MB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6MB15I is usually 5 days.

3.What payment methods are accepted for W632GU6MB15I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6MB15I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6MB15I?

W632GU6MB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6MB15I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6MB15I?

For technical support, including W632GU6MB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6MB15I requirements.

6.How does Aetrix verify that W632GU6MB15I is sourced from the original manufacturer or authorized distributors?

All W632GU6MB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6MB15I meets industry standards.

7.What is the process for return or replacement of W632GU6MB15I?

All W632GU6MB15I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6MB15I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6MB15I part is unused and in its original packaging.

Return procedure for W632GU6MB15I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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