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Winbond Electronics Corporation W632GU6NB-09
- Part No.:
- W632GU6NB-09
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6NB-09.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,036
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Product details
Overview
W632GU6NB-09 from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM supporting DDR3L-2133 speed grade (14-14-14 CL-nRCD-nRP), 1.35V nominal supply, and industrial temperature range (0°C to 95°C). It delivers 2133 MT/s data rates with 8 internal banks, 8-bit prefetch architecture, and programmable CAS latency (CL = 5–14) for use in embedded computing, networking processors, and industrial control memory subsystems.
For engineers reviewing the W632GU6NB-09 datasheet, W632GU6NB-09 pinout, W632GU6NB-09 application, or W632GU6NB-09 equivalent, key selection considerations include its DDR3L-2133 timing compliance, VFBGA-96 package, ZQ calibration support, dynamic on-die termination (Rtt_WR), and write leveling capability for high-speed signal integrity tuning.
Technical Context
This DDR3L SDRAM implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling precise timing at 1066 MHz clock frequency (2133 MT/s).
The device supports full JEDEC DDR3L command set including ACTIVE, READ, WRITE, PRECHARGE, REFRESH, and SELF-REFRESH, plus advanced features such as programmable CWL (5–10), additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and partial array self-refresh (PASR) for power optimization in multi-bank workloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M words × 8 banks × 16 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133, fCK = 1066 MHz) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 0.075 V |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11, 13, 14 - determines read access delay in clock cycles |
| CAS Write Latency | Programmable CWL = 5–10 - sets write-to-strobe alignment for timing closure |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C - validated for industrial-grade thermal environments |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - requires doubled refresh rate above 85°C |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, address/command, data, strobe, and control balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address during ACTIVE, READ, WRITE, PRECHARGE |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock | Edge-triggered command latch reference; defines all timing windows |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS# |
| DQS / DQS# | Differential Data Strobe | Read: edge-aligned with DQ; Write: center-aligned with DQ; enables timing margin recovery |
| DM0–DM1 | Data Mask | Per-byte write masking (2×8-bit lanes); suppresses invalid write data |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence and functional reset independent of clock |
| ODT | On-Die Termination Control | Enables/disables programmable termination resistors on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Control | Standard DDR3 command encoding (e.g., WE# + RAS# + CAS# = PRECHARGE) |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT calibration |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic On-Die Termination (Rtt_WR) | Configurable termination impedance during write bursts improves signal integrity without external resistors |
| Write Leveling | Calibrates DQS-to-CK skew per byte lane to enable reliable 2133 MT/s write capture at system level |
| Multi-Purpose Register (MPR) | Outputs predefined bit pattern for system-level timing calibration and eye-diagram validation |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - cuts IDD6 by up to 40% in partial-workload scenarios |
| Programmable Additive Latency (AL) | AL = 0, CL−1, or CL−2 allows fine-grained tuning of command bus efficiency and tRCD/tRP trade-offs |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures stable output drive strength and ODT accuracy across voltage/temperature |
Applications
| Industrial HMI Controllers | Network Packet Processors |
|---|---|
Use Scenario: Real-time human-machine interface with graphics overlay, local storage buffering, and deterministic response. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoCs; provides low-latency, burst-capable data access for GUI rendering and event handling. Use Value: DDR3L-2133 bandwidth meets 1080p UI frame buffer requirements while 1.35V operation reduces thermal load in sealed enclosures. |
Use Scenario: High-throughput packet classification, deep packet inspection, and flow table lookups in Layer 3 switches. IC Role / Device Role / Timing Role: Shared memory pool for multi-core NPU clusters; supports interleaved bank access to sustain >10 Gbps line-rate processing. Use Value: 8-bank concurrency and programmable CL/CWL enable predictable tRCD/tRP timing under variable traffic loads. |
| Medical Imaging Edge Devices | Ruggedized IoT Gateways |
Use Scenario: Portable ultrasound or digital X-ray units requiring fast image reconstruction and local DICOM buffering. IC Role / Device Role / Timing Role: Frame buffer and algorithm scratchpad memory for FPGA-accelerated image pipelines; interfaces via AXI or AHB bus bridges. Use Value: PASR and self-refresh modes reduce standby power to <15 mA, extending battery life between scans without compromising burst performance. |
Use Scenario: Field-deployed gateways aggregating sensor data across CAN, RS-485, and LoRaWAN interfaces. IC Role / Device Role / Timing Role: Main system memory for Linux-based ARM SoC running real-time telemetry stacks and TLS encryption engines. Use Value: Industrial temperature rating (0–95°C) and ZQ calibration ensure stable operation in uncontrolled outdoor cabinets with wide ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:A | 2Gb DDR3L, 16-bit, VFBGA-96, DDR3L-1600 (11-11-11), CL=11, tRC = 48.75 ns | Lower speed grade; lacks write leveling and MPR; supports −40°C to 95°C | Choose for cost-sensitive designs where 1600 MT/s suffices and calibration features are not required. |
| IS43TR16256B-125KBL | 2Gb DDR3L, 16-bit, VFBGA-96, DDR3L-1600 (11-11-11), CL=11, tRC = 48.75 ns, supports ASR/PASR | Same speed bin; includes ASR but no write leveling; rated −40°C to 105°C | Prefer when extended temperature range (up to 105°C) is mandatory and write-leveling calibration is handled externally. |
Compared with MT41K256M16HA-125:A and IS43TR16256B-125KBL, the W632GU6NB-09 uniquely delivers DDR3L-2133 performance with integrated write leveling and MPR-enabling robust 2133 MT/s timing closure in high-density routing without external calibration logic.
Availability
W632GU6NB-09 is available at Aetrix Electronics and suitable for industrial HMI controllers, network packet processors, and medical imaging edge devices requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L interoperability.
Supply support for W632GU6NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU6NB-09 belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained, thermally demanding embedded systems that require JEDEC-compliant high-speed memory with extended temperature support and advanced calibration features.
FAQ
What is the maximum data rate supported by the W632GU6NB-09?
The W632GU6NB-09 supports DDR3L-2133 operation at 2133 MT/s, corresponding to a 1066 MHz clock frequency (tCK = 0.938 ns minimum). This is validated under JEDEC conditions with CL = 14, nRCD = 14, nRP = 14, and VDD/VDDQ = 1.283–1.45 V at 0–95°C case temperature.
Does the W632GU6NB-09 support both 1.35V and 1.5V operation?
Yes, the W632GU6NB-09 is fully backward-compatible with standard 1.5V DDR3 systems. It operates at 1.35V nominal (1.283–1.45V range) for DDR3L mode and accepts 1.5V ± 0.075V for legacy DDR3 compatibility, with identical timing specifications in both modes per JEDEC JESD79-3F.
How does write leveling function in the W632GU6NB-09?
Write leveling in the W632GU6NB-09 uses the DQS strobe to calibrate skew between DQS and CK at the DRAM input. The controller issues a special MRS command to enter write leveling mode, then adjusts delay taps until the DRAM echoes back a stable pattern - enabling precise tDQSS timing closure at 2133 MT/s.
What package type and ball count does the W632GU6NB-09 use?
The W632GU6NB-09 uses a 96-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum height. It complies with JEDEC MO-270AC and is RoHS-compliant with lead-free terminations.
Is the W632GU6NB-09 suitable for automotive applications?
No - the W632GU6NB-09 is specified for industrial temperature range (0°C to 95°C), not AEC-Q200 automotive qualification. For automotive use, Winbond offers separate A-grade parts (e.g., W632GU6NB-09J with −40°C to 105°C), but the -09 suffix denotes commercial/industrial grade only.
W632GU6NB-09 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.067 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6NB-09 FAQ
1.How can I place an order for W632GU6NB-09 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6NB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6NB-09 reliable?
The price and inventory of W632GU6NB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB-09 is usually 5 days.
3.What payment methods are accepted for W632GU6NB-09?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB-09 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6NB-09?
W632GU6NB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6NB-09 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6NB-09?
For technical support, including W632GU6NB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB-09 requirements.
6.How does Aetrix verify that W632GU6NB-09 is sourced from the original manufacturer or authorized distributors?
All W632GU6NB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB-09 meets industry standards.
7.What is the process for return or replacement of W632GU6NB-09?
All W632GU6NB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB-09, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6NB-09 part is unused and in its original packaging.
Return procedure for W632GU6NB-09:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6NB-09 Tags
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