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Winbond Electronics Corporation W632GU6NB09I TR
- Part No.:
- W632GU6NB09I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6NB09I TR.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,286
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Product details
Overview
W632GU6NB09I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), 1.35V nominal VDD/VDDQ operation, -40°C to +95°C industrial temperature range, and VFBGA-96 (7.5 × 13 mm) packaging. It serves as main memory in embedded controllers, network processors, and industrial SoC platforms requiring low-voltage, high-bandwidth DRAM with JEDEC-compliant timing and robust power-down modes.
For engineers reviewing the W632GU6NB09I TR datasheet, W632GU6NB09I TR pinout, W632GU6NB09I TR application, or W632GU6NB09I TR equivalent, this page delivers verified electrical specs, ball mapping, mode register behavior, ZQ calibration support, and industrial-grade thermal validation - all confirmed against Winbond's official A02 revision datasheet (Apr. 2019).
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, synchronous differential clocking (CK/CK#), and source-synchronous DQS/DQS# strobes aligned to data edges. It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
Key control features include asynchronous RESET#, on-die termination (ODT) with static/dynamic modes, ZQ calibration using external 240Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DDR interface skew compensation. All AC timing parameters are validated at 1066 MHz fCK (DDR3L-2133) under industrial temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16,777,216 words × 8 banks × 16 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133), fCK = 1066 MHz max |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ±75 mV |
| Operating Temperature | -40°C ≤ TCASE ≤ 95°C (industrial grade) |
| CAS Latency (CL) | Programmable CL = 5, 6, 7, 8, 9, 10, 11, 13, 14; CL = 14 supported at DDR3L-2133 |
| CAS Write Latency (CWL) | Programmable CWL = 5–10; CWL = 10 required for CL = 14 at DDR3L-2133 |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C); ASR/PASR supported |
| Package | VFBGA-96, 7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and standard DDR3L ball assignment per JEDEC JESD79-3F. Ball layout optimized for signal integrity in high-speed memory interfaces with dedicated VDD, VDDQ, VSS, and VSSQ planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs; A10 controls auto-precharge; A12/A13 select bank |
| BA0–BA2 | Bank Address | Select one of eight internal banks for concurrent access |
| CK / CK# | Differential Clock | Edge-triggered command/address latching at crosspoint; defines tCK period |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS# |
| DQS / DQS# | Differential Strobe | Edge-aligned with read data, center-aligned with write data; enables timing margin recovery |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; suppresses masked write data |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors during reads/writes |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (active-low); decoded with address and BA |
| CKE | Clock Enable | Gates internal clock; controls entry/exit from power-down and self-refresh modes |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | Uses external 240Ω reference resistor to calibrate output driver strength and ODT impedance across voltage/temperature |
| Write Leveling | Enables per-lane DQS-to-CK delay adjustment via MPR read pattern to compensate for PCB trace skew |
| Dynamic ODT (Rtt_WR) | Switches ODT termination on DQ/DQS lines during write bursts only, reducing standby current and improving signal integrity |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern accessible via MRS; used for system-level timing margin validation |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, enabling selective power optimization in idle memory regions |
| Auto Self Refresh (ASR) | Automatically doubles refresh rate at elevated temperatures (≥85°C), eliminating host firmware intervention for thermal management |
Applications
| Industrial PLC Memory | Network Processor Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution in programmable logic controllers with dual-core ARM Cortex-A9 SoCs. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to memory controller; provides burst-access capability for instruction/data caching and I/O buffer staging. Use Value: DDR3L-2133 bandwidth (17 GB/s peak) and industrial temperature rating (-40°C to +95°C) ensure reliable operation in uncooled cabinet environments without throttling. |
Use Scenario: Packet buffering and flow control in Layer 3 enterprise switches with integrated network processors. IC Role / Device Role / Timing Role: High-throughput packet buffer memory; supports concurrent read/write operations across 8 banks to sustain line-rate forwarding. Use Value: 8-bank interleaving and programmable tRCD/tRP (14 ns) minimize command latency overhead, enabling sub-100 ns average access time under sustained traffic loads. |
| Medical Imaging Subsystem | Automotive ADAS Domain Controller |
Use Scenario: Frame buffering and image processing pipeline memory in portable ultrasound systems with FPGA-based beamforming engines. IC Role / Device Role / Timing Role: Low-voltage DDR3L memory co-located with FPGA; supplies pixel data to real-time DSP cores with minimal EMI impact. Use Value: 1.35V operation reduces power delivery noise and heat generation, critical for battery-powered handheld devices with strict thermal envelopes. |
Use Scenario: Sensor fusion memory in automotive domain controllers integrating radar, camera, and LiDAR data streams. IC Role / Device Role / Timing Role: Safety-critical working memory for ISO 26262 ASIL-B software stacks; supports ECC-capable memory controllers via DQ/DQS signaling integrity. Use Value: Write leveling and MPR calibration enable precise timing closure across wide temperature ranges (-40°C to +95°C), ensuring functional safety compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-213JBL | Same density (2Gb), same VFBGA-96 package, but supports CL=11 only at DDR3L-2133; no PASR or ASR | Lacks partial array self-refresh and auto self-refresh; requires host-managed refresh extension above 85°C | Choose when simplified firmware stack and lower cost outweigh advanced power management features |
| MT41K256M16HA-125:A | 2Gb DDR3L, 96-ball VFBGA, but rated only for commercial temp (0°C–95°C); CL=11 max at 2133 MT/s | No industrial temperature guarantee below 0°C; lacks write leveling and MPR calibration support | Acceptable for non-industrial ambient environments where full JEDEC industrial qualification is not required |
Compared with IS43TR16256B-213JBL and MT41K256M16HA-125:A, the W632GU6NB09I TR delivers broader CL/CWL flexibility (up to CL=14/CWL=10), certified industrial temperature operation with ASR/PASR, and hardware-assisted timing calibration - making it optimal for thermally constrained, safety-aware, or long-lifecycle embedded designs.
Availability
W632GU6NB09I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for W632GU6NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU6NB09I TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant interoperability with mainstream memory controllers.
FAQ
What is the maximum supported CAS Latency for W632GU6NB09I TR at DDR3L-2133 speed?
The W632GU6NB09I TR supports CAS Latency (CL) up to 14 at DDR3L-2133 speed (1066 MHz fCK), with corresponding tAA/tRCD/tRP minimum values of 13.09 ns. This CL=14 setting is validated per JEDEC JESD79-3F and explicitly listed in the device's Sup_CL specification table for the -09/09I/09J speed grades.
Does W632GU6NB09I TR support both DDR3L and standard DDR3 voltage levels?
Yes, W632GU6NB09I TR supports dual-voltage operation: 1.35V nominal (1.283–1.45V range) for DDR3L mode and backward compatibility to 1.5V ±75 mV for legacy DDR3 systems. Voltage switching between modes is controlled via VDD/VDDQ supply rails and does not require mode register changes.
How is ZQ calibration implemented on W632GU6NB09I TR?
W632GU6NB09I TR performs ZQ calibration using an external 240Ω ±1% resistor connected between ZQ pin and VSS. The internal calibration circuit adjusts output driver strength and ODT resistance values across process/voltage/temperature variations. Calibration is initiated via ZQCL command and must be repeated after power-up, VDD change, or temperature shift >50°C.
What is the purpose of the Multi-Purpose Register (MPR) in W632GU6NB09I TR?
The MPR in W632GU6NB09I TR stores a fixed 128-bit calibration pattern used for system-level timing margin verification. When enabled via MR3, the DRAM outputs this pattern on DQ pins synchronized to DQS, allowing test equipment or memory controller logic to measure setup/hold margins and validate write leveling accuracy.
Can W632GU6NB09I TR operate reliably at 95°C case temperature?
Yes, W632GU6NB09I TR is qualified for -40°C ≤ TCASE ≤ 95°C operation with full JEDEC AC/DC specifications met. At temperatures above 85°C, Auto Self Refresh (ASR) must be enabled (MR2 A6=1b) to double refresh frequency (tREFI = 3.9 µS), ensuring data retention integrity without host firmware intervention.
W632GU6NB09I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6NB09I TR FAQ
1.How can I place an order for W632GU6NB09I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6NB09I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6NB09I TR reliable?
The price and inventory of W632GU6NB09I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB09I TR is usually 5 days.
3.What payment methods are accepted for W632GU6NB09I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB09I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6NB09I TR?
W632GU6NB09I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6NB09I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6NB09I TR?
For technical support, including W632GU6NB09I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB09I TR requirements.
6.How does Aetrix verify that W632GU6NB09I TR is sourced from the original manufacturer or authorized distributors?
All W632GU6NB09I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB09I TR meets industry standards.
7.What is the process for return or replacement of W632GU6NB09I TR?
All W632GU6NB09I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB09I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6NB09I TR part is unused and in its original packaging.
Return procedure for W632GU6NB09I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6NB09I TR Tags
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