Winbond Electronics Corporation W632GU6NB-09 TR

Overview

W632GU6NB-09 TR from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), 1.35 V nominal supply, and industrial temperature range (0°C to 95°C). It delivers 2133 MT/s data rates with programmable CAS latency (CL = 5–14), on-die termination (ODT), and ZQ calibration, deployed in embedded computing, networking processors, and industrial SoC memory subsystems.

For engineers reviewing the W632GU6NB-09 TR datasheet, W632GU6NB-09 TR pinout, W632GU6NB-09 TR application, or W632GU6NB-09 TR equivalent, this page provides verified timing parameters, ball configuration, ODT control modes, power-down behavior, and JEDEC-compliant DDR3L-2133 interoperability details essential for memory controller initialization and signal integrity validation.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned edge-to-read and center-to-write data. It supports asynchronous RESET#, posted CAS with additive latency (AL = 0, CL−1, CL−2), and dynamic ODT for write-data signal integrity.

Key operational features include ZQ calibration for output driver and ODT impedance tuning, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-DQS skew compensation, and partial array self-refresh (PASR) to reduce power during idle bank subsets.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Ball assignment follows JEDEC-standard DDR3L layout optimized for signal integrity and routing density in high-speed memory interfaces.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W632GU6NB-09 TR, both alternatives offer lower maximum data rate and reduced feature set-MT41K256M16HA-125:E omits PASR and MPR, while IS43TR16256B-125KBL lacks dynamic ODT and extended CL support-making W632GU6NB-09 TR the only option among the three with full DDR3L-2133 timing compliance and production-ready calibration infrastructure.

Availability

W632GU6NB-09 TR is available at Aetrix Electronics and suitable for networking equipment, industrial HMIs, embedded vision systems, and medical imaging front-end designs requiring stable component supply, long-lifecycle support, and JEDEC DDR3L-2133 compliance.

Supply support for W632GU6NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GU6NB-09 TR belongs to Winbond's DDR3L SDRAM product line, engineered for high-bandwidth, low-voltage memory subsystems in space-constrained embedded platforms where thermal robustness and JEDEC interoperability are critical.

FAQ

What is the maximum data rate supported by the W632GU6NB-09 TR?

The W632GU6NB-09 TR supports DDR3L-2133 operation at 1066 MHz clock frequency, delivering 2133 MT/s transfer rate. This is validated under JEDEC conditions with CL=14, tRCD=tRP=14 cycles, and VDD/VDDQ=1.35 V ±0.075 V. The -09 suffix explicitly denotes this speed grade per Winbond's order information table.

Does the W632GU6NB-09 TR support both 1.35 V and 1.5 V operation?

Yes, the W632GU6NB-09 TR is backward compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ±0.075 V) while fully compliant with DDR3L 1.35 V specifications. This dual-voltage capability allows seamless migration from legacy DDR3 designs without hardware changes, provided timing margins are re-validated per JEDEC JESD79-3F.

How does the W632GU6NB-09 TR handle temperature-induced refresh rate changes?

The W632GU6NB-09 TR automatically doubles refresh frequency (tREFI = 3.9 µS) when case temperature exceeds 85°C, meeting JEDEC requirements for extended temperature operation up to 95°C. This is managed via Auto Self-Refresh (ASR) mode enabled through MR2 bit A6, eliminating software intervention during thermal transients.

What calibration features are implemented in the W632GU6NB-09 TR for signal integrity?

The W632GU6NB-09 TR integrates ZQ calibration for output driver and ODT impedance tuning, write leveling for DQS-to-CK deskew, and Multi-Purpose Register (MPR) pattern readout for system-level timing validation. These features collectively reduce board-level tuning effort and improve first-pass success in high-speed DDR3L layouts.

Is the W632GU6NB-09 TR pin-compatible with other Winbond DDR3L devices in the same package?

Yes, the W632GU6NB-09 TR uses Winbond's standardized 96-ball VFBGA footprint shared across its DDR3L portfolio (e.g., W632GU6NB-11, W632GU6NB-12). Ball assignments for address, command, data, and control signals conform to JEDEC DDR3L specification, enabling drop-in replacement within the same speed grade and temperature range.