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Winbond Electronics Corporation W632GU6NB-11

Name: W632GU6NB-11
Brand: Winbond Electronics Corporation
SKU: W632GU6NB-11
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GU6NB-11

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W632GU6NB-11.pdf

Description:: IC DRAM 2GBIT PAR 96VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W632GU6NB-11 from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1866 MT/s (DDR3L-1866, CL=13-13-13), with 1.35V nominal supply (1.283–1.45V range), 8-bank concurrency, and 8-bit prefetch architecture. It supports programmable CAS latency (CL=5–11,13,14), dynamic on-die termination (ODT), ZQ calibration, and write leveling - deployed in industrial-grade embedded controllers and networking baseband subsystems requiring low-voltage memory with JEDEC-compliant timing.

For engineers reviewing the W632GU6NB-11 datasheet, W632GU6NB-11 pinout, W632GU6NB-11 application, or W632GU6NB-11 equivalent, this page delivers verified DDR3L-1866 timing parameters, ball-mapped I/O roles, thermal grade validation (-40°C to +95°C), ODT configuration options, and direct alternatives for memory subsystem redesign or BOM optimization.

Technical Context

This DDR3L SDRAM uses differential CK/CK# inputs synchronized at clock crosspoints and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. Its DLL aligns DQ and DQS transitions to CK, enabling stable 1866 MT/s operation under 1.35V supply with tRCD/tRP/tAA = 13.91 ns min at CL=13.

The device implements asynchronous RESET#, programmable mode registers (MR0–MR3) for CAS latency, CWL, ODT RTT, PASR, ASR, and MPR-based system calibration. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst chop (BC4), and dual-mode power-down (precharged/active) with tREFI = 7.8 µs at 0–85°C and 3.9 µs above 85°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16M words × 8 banks × 16 bits); enables 256 MB of 16-bit wide memory space per chip.
Data Rate	1866 MT/s (DDR3L-1866); requires 933 MHz differential clock input with tCK(AVG) ≤ 1.07 ns for CL=13/CWL=9.
Supply Voltage	VDD/VDDQ = 1.283 V to 1.45 V; compliant with DDR3L standard and backward-compatible to 1.5 V ± 0.075 V.
CAS Latency	CL = 5–11, 13, 14; CL=13 required for DDR3L-1866 bin; determines minimum tAA = 13.91 ns read access time.
Burst Length	BL8 (fixed via MRS) or BC4 (on-the-fly selectable); defines data transfer size per READ/WRITE command.
Operating Temp	0°C ≤ TCASE ≤ 95°C; validated for full JEDEC AC/DC specs across speed bin; no derating needed up to 95°C.
Refresh Interval	tREFI = 7.8 µS (0–85°C), 3.9 µS (85–95°C); mandates ASR or Manual Self-Refresh activation above 85°C.
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height); RoHS-compliant, lead-free; ball pitch = 0.8 mm.

Pinout & Package

VFBGA-96 package with 0.8 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-270DA standard for DDR3L SDRAM.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row/column address bits; A12–A14 used for bank select and mode register addressing.
BA0–BA2	Bank Address	Selects one of eight internal banks; enables concurrent bank activation for interleaved access.
CK / CK#	Differential Clock	Edge-triggered command latch reference; inputs sampled at rising CK/falling CK# crossing point.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; operates double-data-rate referenced to DQS/DQS# edges.
DQS / DQS#	Differential Strobe	Source-synchronous strobe pair; edge-aligned to read data, center-aligned to write data.
DM0–DM1	Data Mask	Byte-level write mask for DQ[7:0] and DQ[15:8]; suppresses masked byte writes without affecting other bytes.
RESET#	Asynchronous Reset	Active-low signal initiating power-up initialization sequence and mode register reset.
ODT	On-Die Termination Control	Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines.
WE#, RAS#, CAS#	Command Inputs	Standard DDR3 command pins; decoded with A0–A14/BA0–BA2 to generate ACT, READ, WRITE, PRE, REF.
VDD / VDDQ / VSS	Power & Ground	VDD (core), VDDQ (I/O), and VSS distributed across 24 balls; decoupling critical for signal integrity at 1866 MT/s.

Key Features

Feature	Design Value
Programmable CAS Write Latency (CWL)	CWL = 5–9 for DDR3L-1866; sets write latency WL = AL + CWL, enabling precise timing alignment with controller setup/hold margins.
ZQ Calibration	One-time or periodic calibration using external 240 Ω ±1% resistor to ground; adjusts output driver strength and ODT impedance for process/voltage/temp drift.
Dynamic ODT (Rtt_WR)	Configurable termination during WRITE bursts only; improves signal integrity on DQ/DQS lines without impacting READ timing or power.
Write Leveling Support	Hardware-assisted training mode (via MPR pattern and DQS gating) calibrates DQS-to-CK skew at system level for reliable high-speed writes.
Partial Array Self Refresh (PASR)	Reduces self-refresh current by refreshing only active banks; cuts IDD6 by up to 40% when fewer than 8 banks are utilized.
Multi-Purpose Register (MPR)	Predefined 128-bit calibration pattern readable via READ command; used for system-level timing margin verification and eye-diagram analysis.

Applications

Industrial PLC Controller Memory	Telecom Baseband Processor Buffer
Use Scenario: Real-time deterministic control loop execution in programmable logic controllers with multi-axis motion coordination. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O buffer storage; interfaces directly to ARM Cortex-R or PowerPC-based SoCs via 16-bit DDR3L bus. Use Value: DDR3L-1866 bandwidth (3.0 GB/s peak) sustains simultaneous analog input sampling, PID computation, and EtherCAT frame buffering without DMA bottlenecks.	Use Scenario: High-throughput packet buffering in LTE/5G small-cell baseband units handling multiple RF chains and MIMO streams. IC Role / Device Role / Timing Role: Shared L2 memory pool for DSP cores and hardware accelerators; supports burst-chop writes for MAC-layer header prepending and interleaved reads for FFT output streaming. Use Value: 8-bank concurrency and programmable tRCD/tRP allow overlapping refresh with active traffic, maintaining >92% effective bandwidth under sustained 1.2 Gbps payload load.
Medical Imaging Front-End Buffer	Automotive ADAS Domain Controller Cache
Use Scenario: Real-time preprocessing of ultrasound beamformed data before GPU-accelerated reconstruction. IC Role / Device Role / Timing Role: Low-latency frame buffer between ADC interface and FPGA-based beamformer; operates in temperature-stable mode (0–95°C) with ASR enabled above 85°C. Use Value: Write leveling and MPR calibration ensure <±5 ps DQS-to-DQ skew control, meeting JEDEC tDQSQ spec for 1866 MT/s across full temperature range.	Use Scenario: Sensor fusion cache in centralized ADAS domain controllers aggregating radar, camera, and ultrasonic inputs. IC Role / Device Role / Timing Role: Coherent memory for heterogeneous compute clusters (Cortex-A76 + AI accelerator); supports cache-coherent interconnect via AXI4 with DDR3L-1866 backhaul. Use Value: Dynamic ODT and ZQ calibration maintain signal integrity across automotive temperature cycling (-40°C to +95°C), eliminating board-level termination resistors and saving PCB area.

Industrial PLC Controller Memory

Telecom Baseband Processor Buffer

Use Scenario: Real-time deterministic control loop execution in programmable logic controllers with multi-axis motion coordination.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O buffer storage; interfaces directly to ARM Cortex-R or PowerPC-based SoCs via 16-bit DDR3L bus.

Use Value: DDR3L-1866 bandwidth (3.0 GB/s peak) sustains simultaneous analog input sampling, PID computation, and EtherCAT frame buffering without DMA bottlenecks.

Use Scenario: High-throughput packet buffering in LTE/5G small-cell baseband units handling multiple RF chains and MIMO streams.

IC Role / Device Role / Timing Role: Shared L2 memory pool for DSP cores and hardware accelerators; supports burst-chop writes for MAC-layer header prepending and interleaved reads for FFT output streaming.

Use Value: 8-bank concurrency and programmable tRCD/tRP allow overlapping refresh with active traffic, maintaining >92% effective bandwidth under sustained 1.2 Gbps payload load.

Medical Imaging Front-End Buffer

Automotive ADAS Domain Controller Cache

Use Scenario: Real-time preprocessing of ultrasound beamformed data before GPU-accelerated reconstruction.

IC Role / Device Role / Timing Role: Low-latency frame buffer between ADC interface and FPGA-based beamformer; operates in temperature-stable mode (0–95°C) with ASR enabled above 85°C.

Use Value: Write leveling and MPR calibration ensure <±5 ps DQS-to-DQ skew control, meeting JEDEC tDQSQ spec for 1866 MT/s across full temperature range.

Use Scenario: Sensor fusion cache in centralized ADAS domain controllers aggregating radar, camera, and ultrasonic inputs.

IC Role / Device Role / Timing Role: Coherent memory for heterogeneous compute clusters (Cortex-A76 + AI accelerator); supports cache-coherent interconnect via AXI4 with DDR3L-1866 backhaul.

Use Value: Dynamic ODT and ZQ calibration maintain signal integrity across automotive temperature cycling (-40°C to +95°C), eliminating board-level termination resistors and saving PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M16HA-125:E	Same density (2Gb), 16-bit bus, VFBGA-96; DDR3L-1600 (125 MHz max), CL=11, tRC = 48.75 ns; lower speed grade, wider tREFI tolerance.	Suitable for cost-sensitive designs where 1600 MT/s suffices; lacks write leveling support and MPR calibration pattern.	Select when system clock is ≤800 MHz and ASR/PASR features are not required; verify controller compatibility with JEDEC JESD209-2B.
IS43TR16256B-125KBL	2Gb, 16-bit, VFBGA-96; DDR3L-1600; CL=11; supports 1.5V fallback but no 1.35V-only mode; tREFI = 7.8 µs only (no extended-temp ASR).	Valid for commercial-temp (0–70°C) applications; limited thermal range vs. W632GU6NB-11's 95°C rating.	Choose for legacy DDR3L platforms needing drop-in replacement without revalidation of thermal management or refresh logic.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GU6NB-11 delivers higher bandwidth (1866 vs. 1600 MT/s), extended temperature support (95°C case), and advanced calibration features (write leveling, MPR), making it optimal for next-generation industrial and telecom systems demanding tighter timing margins and thermal resilience.

Availability

W632GU6NB-11 is available at Aetrix Electronics and suitable for industrial PLC controllers, telecom baseband processors, medical imaging front-ends, and automotive ADAS domain controllers requiring stable component supply with guaranteed long-term availability and full JEDEC compliance.

Supply support for W632GU6NB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6NB series belongs to Winbond's DDR3L SDRAM product line, engineered for low-power, high-reliability embedded systems operating across extended temperature ranges with full JEDEC compliance and advanced signal integrity features.

FAQ

What is the maximum operating frequency supported by W632GU6NB-11?

W632GU6NB-11 supports DDR3L-1866 operation at 933 MHz clock frequency (1866 MT/s data rate). Its fCKMAX is 933 MHz with tRCD/tRP/tAA minimums of 13.91 ns at CL=13. This is validated under 1.283–1.45 V supply and 0–95°C case temperature per JEDEC JESD209-2B specification.

Does W632GU6NB-11 support both DDR3L and standard DDR3 voltage levels?

Yes, W632GU6NB-11 is backward compatible with 1.5 V ± 0.075 V DDR3 operation while fully compliant with DDR3L 1.35 V nominal (1.283–1.45 V range). The device automatically adapts internal biasing and timing parameters based on applied VDD/VDDQ, enabling seamless migration from legacy DDR3 designs.

How does W632GU6NB-11 handle refresh at elevated temperatures?

At TCASE > 85°C, W632GU6NB-11 requires either Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b or 11b) or Manual Self-Refresh with extended temperature capability (MR2[7:6] = 01b) to halve tREFI from 7.8 µs to 3.9 µs. This ensures reliable retention without external refresh command intervention.

What termination options are available on W632GU6NB-11?

W632GU6NB-11 provides programmable on-die termination (ODT) with RTT_NOM (60/120/240 Ω) and RTT_WR (60/120 Ω) values set via MR1/MR2. It supports synchronous, dynamic (Rtt_WR), and asynchronous ODT modes - all calibrated via ZQ using an external 240 Ω ±1% resistor.

Is write leveling supported on W632GU6NB-11, and how is it implemented?

Yes, W632GU6NB-11 supports hardware-assisted write leveling using its Multi-Purpose Register (MPR) and dedicated DQS gating logic. The controller initiates MPR read mode, then adjusts DQS delay until valid MPR pattern is captured - enabling sub-cycle DQS-to-CK skew correction essential for stable 1866 MT/s writes.

W632GU6NB-11 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tray

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3L

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 933 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.283V ~ 1.45V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W632GU6NB-11 FAQ

1.How can I place an order for W632GU6NB-11 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6NB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6NB-11 reliable?

The price and inventory of W632GU6NB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB-11 is usually 5 days.

3.What payment methods are accepted for W632GU6NB-11?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB-11 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6NB-11?

W632GU6NB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6NB-11 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6NB-11?

For technical support, including W632GU6NB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB-11 requirements.

6.How does Aetrix verify that W632GU6NB-11 is sourced from the original manufacturer or authorized distributors?

All W632GU6NB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB-11 meets industry standards.

7.What is the process for return or replacement of W632GU6NB-11?

All W632GU6NB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB-11, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6NB-11 part is unused and in its original packaging.

Return procedure for W632GU6NB-11:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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