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Winbond Electronics Corporation W632GU6NB11I
- Part No.:
- W632GU6NB11I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6NB11I.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,105
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Product details
Overview
W632GU6NB11I from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at 1866 MT/s with CL=13, tRCD=tRP=13 ns, and industrial temperature range (–40°C to +95°C). It delivers high-bandwidth memory for embedded controllers, network processors, and industrial HMIs requiring low-voltage operation and robust thermal performance.
For engineers reviewing the W632GU6NB11I datasheet, W632GU6NB11I pinout, W632GU6NB11I application, or W632GU6NB11I equivalent, key selection factors include DDR3L-1866 timing compliance, VDD/VDDQ = 1.283–1.45 V operation, on-die termination (ODT) programmability, ZQ calibration support, and industrial-grade reliability across full temperature range.
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned edge-to-read and center-to-write data. It supports posted CAS, programmable additive latency (AL = 0, CL−1, CL−2), and dynamic ODT for signal integrity optimization during write bursts.
The device integrates asynchronous RESET#, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DDR interface tuning. It complies fully with JEDEC DDR3L standard JESD79-3F and supports both DDR3L (1.35 V) and backward-compatible DDR3 (1.5 V) supply modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16,777,216 words × 8 banks × 16 bits) |
| Data Rate | 1866 MT/s (DDR3L-1866, CL=13, tRCD=tRP=13 ns) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (DDR3L); supports 1.5 V ± 0.075 V (backward compatible) |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C (industrial grade, full JEDEC spec compliance) |
| Burst Length | BL8 (fixed or on-the-fly), BC4 supported via mode register |
| CAS Latency Range | CL = 5, 6, 7, 8, 9, 10, 11, 13, 14 - configurable per speed bin |
| CAS Write Latency | CWL = 5–9 (supports CWL=7 at DDR3L-1866) |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR or Manual Self-Refresh enabled |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address inputs; A10 used for auto-precharge control |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent access |
| CK, CK# | Differential Clock | Edge-triggered command latch point; all commands sampled at CK rising / CK# falling crossing |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low chip select and row/column/write enable; define command truth table (e.g., ACT, READ, WRITE, PRE) |
| DM0–DM1 | Data Mask | Per-byte write mask for 16-bit DQ bus; suppresses write data without affecting DQS timing |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS# |
| DQS, DQS# | Differential Strobe | Edge-aligned with read data, center-aligned with write data; DLL-aligned to CK/CK# |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence and resets internal state machines |
| ODT | On-Die Termination Control | Dynamic or synchronous ODT enable; selects RTT_NOM/RTT_WR values per MR1/MR2 |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1% external resistor to ground for output driver and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL=7 at DDR3L-1866, enabling precise write timing alignment with system controller |
| Dynamic On-Die Termination (Rtt_WR) | Enables per-write-cycle ODT activation on DQ/DQS lines to reduce stub reflections and improve write eye margin |
| Write Leveling Support | Allows system controller to calibrate DQS-to-CK skew per byte lane, critical for reliable 1866 MT/s operation |
| Multi-Purpose Register (MPR) | Provides predefined 128-bit calibration pattern for read-based timing margin analysis and system-level validation |
| Auto Self-Refresh (ASR) & PASR | Extends refresh interval to 3.9 µS at 95°C and enables partial array self-refresh to reduce IDD6 current in idle banks |
| ZQ Calibration | Performs periodic output driver and ODT impedance calibration using external 240 Ω reference resistor |
Applications
| Industrial HMI Systems | Network Packet Processors |
|---|---|
|
Use Scenario: Touch-enabled operator panels in factory automation systems requiring real-time display updates and local data buffering. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A9/A15-based SoCs, interfacing via 16-bit DDR3L bus at 1866 MT/s. Use Value: Industrial temperature rating (–40°C to +95°C) ensures uninterrupted operation in uncontrolled cabinet environments; low-voltage DDR3L reduces system power and heat dissipation. |
Use Scenario: High-throughput packet classification engines in enterprise switches needing fast access to flow tables and buffer descriptors. IC Role / Device Role / Timing Role: Low-latency, high-bandwidth memory for ASIC/FPGA-based traffic managers handling 10+ Gbps line rates. Use Value: BL8 burst and 8-bank concurrency enable sustained 14.9 GB/s peak bandwidth; dynamic ODT maintains signal integrity under heavy write load. |
| Medical Imaging Controllers | Automated Test Equipment (ATE) |
|
Use Scenario: Real-time image reconstruction modules in portable ultrasound devices requiring deterministic memory access for FPGA-accelerated FFT processing. IC Role / Device Role / Timing Role: Coherent memory resource for dual-core Cortex-R4/R5 subsystems running safety-critical firmware with strict timing budgets. Use Value: Asynchronous RESET# and full JEDEC compliance ensure predictable initialization and qualification for IEC 62304 Class C software; MPR-assisted calibration simplifies production test. |
Use Scenario: Pin electronics boards in semiconductor testers requiring precise waveform generation and capture at sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: High-speed trace buffer for pattern generators and digitizers, synchronized to system clock via DLL-aligned DQS. Use Value: Write leveling and tAA/tRCD/tRP = 13 ns timing guarantee deterministic setup/hold margins at 1866 MT/s; VFBGA-96 footprint enables dense, low-inductance routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-125KBL | 2Gb DDR3L, 1600 MT/s (CL=11), VFBGA-96, –40°C to +95°C; no MPR or write leveling support | Limited to lower bandwidth; lacks system calibration features needed for 1866 MT/s designs | Choose when 1600 MT/s suffices and calibration simplicity is prioritized over peak performance |
| MT41K256M16TW-125:A | 4Gb DDR3L, 1600 MT/s (CL=11), FBGA-96, –40°C to +95°C; supports write leveling but no MPR | Higher density but lower speed grade; requires board redesign for 4Gb layout and timing closure | Consider only if capacity >2Gb is mandatory and system can tolerate reduced data rate and missing MPR diagnostics |
Compared with IS43TR16256B-125KBL and MT41K256M16TW-125:A, the W632GU6NB11I uniquely delivers 1866 MT/s with full JEDEC-compliant write leveling, MPR, and dynamic ODT in industrial temperature grade - enabling higher throughput and more robust DDR interface tuning without increasing PCB layer count or BOM cost.
Availability
W632GU6NB11I is available at Aetrix Electronics and suitable for industrial HMIs, network packet processors, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU6NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile RAM products.
The W632GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding high reliability, low-voltage operation, and extended temperature support without sacrificing bandwidth.
FAQ
What is the maximum data rate supported by the W632GU6NB11I?
The W632GU6NB11I supports up to 1866 MT/s (DDR3L-1866) with CL=13, tRCD=tRP=13 ns, and operates within its specified industrial temperature range. This speed grade is validated per JEDEC JESD79-3F and confirmed in the device's speed bin labeling (-11I suffix) and AC timing tables.
Does the W632GU6NB11I support both DDR3L and standard DDR3 voltage levels?
Yes, the W632GU6NB11I supports VDD/VDDQ = 1.283 V to 1.45 V for DDR3L operation and is backward compatible with 1.5 V ± 0.075 V DDR3 supplies. Voltage switching between modes is supported per Section 11.4 of the datasheet, with appropriate mode register configuration and timing guardbanding.
How does the W632GU6NB11I handle thermal derating above 85°C?
Above 85°C, the W632GU6NB11I requires doubling the refresh rate (tREFI = 3.9 µs) and mandates use of either Auto Self-Refresh (ASR) or Manual Self-Refresh with Extended Temperature Range mode (MR2[7:6] = 10b or 11b). This ensures data retention integrity up to +95°C case temperature.
What calibration features does the W632GU6NB11I provide for high-speed DDR interface tuning?
The W632GU6NB11I provides write leveling for DQS-to-CK skew compensation and a multi-purpose register (MPR) delivering a fixed 128-bit calibration pattern. These features enable system-level timing margin analysis and are essential for achieving stable 1866 MT/s operation in production hardware.
Is the W632GU6NB11I pin-compatible with other Winbond DDR3L SDRAMs in the same package?
Yes, the W632GU6NB11I uses the standard VFBGA-96 ball map defined in Section 5 of the datasheet and is pin-compatible with other W632GU6NB speed grades (e.g., -09I, -12I, -15I) and density variants sharing the same 16-bit x8-bank organization and package footprint.
W632GU6NB11I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6NB11I FAQ
1.How can I place an order for W632GU6NB11I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6NB11I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6NB11I reliable?
The price and inventory of W632GU6NB11I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB11I is usually 5 days.
3.What payment methods are accepted for W632GU6NB11I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB11I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6NB11I?
W632GU6NB11I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6NB11I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6NB11I?
For technical support, including W632GU6NB11I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB11I requirements.
6.How does Aetrix verify that W632GU6NB11I is sourced from the original manufacturer or authorized distributors?
All W632GU6NB11I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB11I meets industry standards.
7.What is the process for return or replacement of W632GU6NB11I?
All W632GU6NB11I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB11I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6NB11I part is unused and in its original packaging.
Return procedure for W632GU6NB11I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6NB11I Tags
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