Winbond Electronics Corporation W632GU6NB11I TR

Overview

W632GU6NB11I TR from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35V nominal supply with industrial temperature support (−40°C to +95°C), compliant with DDR3L-1866 (13-13-13) timing, and featuring programmable CAS latency (CL=5–13), on-die termination (ODT), and ZQ calibration for high-speed memory subsystems in networking and embedded computing.

For engineers reviewing the W632GU6NB11I TR datasheet, W632GU6NB11I TR pinout, W632GU6NB11I TR application, or W632GU6NB11I TR equivalent, this device supports system-level timing calibration via write leveling and MPR read patterns, delivers burst read/write throughput up to 1866 MT/s, and enables power-efficient operation through active and precharge power-down modes with dynamic ODT control.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with all commands latched on the rising edge of CK and data referenced to bi-directional DQS/DQS# strobes. It supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization in high-bandwidth controllers.

The device integrates asynchronous RESET# for power-up initialization and reset, supports both synchronous and dynamic ODT modes with configurable RTT values (RZQ/4, RZQ/2, RZQ/1), and provides ZQ calibration using an external 240 Ω reference resistor to maintain output driver and termination accuracy across voltage and temperature.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch; RoHS-compliant, lead-free construction per JEDEC MO-270AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W632GU6NB11I TR, IS43TR16256B-125KBL offers lower cost at reduced speed and feature set, while MT41K256M16HA-125:E provides stronger vendor longevity and validation coverage but trades off power efficiency and industrial temperature headroom.

Availability

W632GU6NB11I TR is available at Aetrix Electronics and suitable for networking equipment, industrial HMIs, medical imaging subsystems, and avionics data recorders requiring stable component supply, extended temperature reliability, and DDR3L-1866 performance.

Supply support for W632GU6NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and robust signal integrity features like write leveling and dynamic ODT.

FAQ

What is the maximum data rate supported by the W632GU6NB11I TR?

The W632GU6NB11I TR supports DDR3L-1866 operation at 1866 MT/s, corresponding to a minimum clock period (tCK) of 1.07 ns. This speed grade is validated for CL=13 timing (13-13-13) and requires stable 1.35 V supply and −40°C to +95°C case temperature compliance. The device maintains full JEDEC AC/DC specifications across this bin under industrial conditions.

Does the W632GU6NB11I TR support backward compatibility with standard DDR3 systems?

Yes, the W632GU6NB11I TR supports backward compatibility with 1.5 V DDR3 systems. Its VDD/VDDQ rails accept 1.5 V ± 0.075 V, allowing seamless integration into existing DDR3 designs without hardware modification. However, DDR3L-specific features such as lower IDD currents and extended temperature operation are only guaranteed at 1.35 V.

How does the W632GU6NB11I TR implement on-die termination (ODT)?

The W632GU6NB11I TR implements programmable ODT via Mode Registers MR1 and MR2, supporting RTT_NOM (RZQ/4, RZQ/2, RZQ/1) and dynamic RTT_WR (RZQ/4, RZQ/2) configurations. ODT is enabled synchronously with command decode or asynchronously during power-down, and calibrated using the ZQ pin and external 240 Ω resistor to maintain impedance accuracy across voltage and temperature.

What is the purpose of the Multi-Purpose Register (MPR) in the W632GU6NB11I TR?

The MPR in the W632GU6NB11I TR outputs a fixed 128-bit calibration pattern upon MRS entry, enabling system-level timing margin testing without disrupting normal memory operation. This allows host controllers to perform read DQ–DQS eye measurements and validate setup/hold margins during bring-up, especially critical for 1866 MT/s interfaces with tight skew budgets.

Can the W632GU6NB11I TR operate reliably at +95°C case temperature?

Yes, the W632GU6NB11I TR is rated for −40°C ≤ TCASE ≤ +95°C and fully complies with JEDEC DDR3L specifications at this upper limit. At temperatures above 85°C, it requires either Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 0b10) or Auto Self-Refresh (ASR) mode (MR2[7:6] = 0b11) to maintain refresh integrity with doubled tREFI = 3.9 µS.