Winbond Electronics Corporation W632GU6NB11J

Overview

W632GU6NB11J from Winbond Electronics is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1866 MT/s (DDR3L-1866, CL=13), with 1.35V nominal supply, industrial-plus temperature range (−40°C to +105°C), and VFBGA-96 package. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring low-voltage, high-reliability DRAM.

For engineers reviewing the W632GU6NB11J datasheet, W632GU6NB11J pinout, W632GU6NB11J application, or W632GU6NB11J equivalent, this page delivers verified timing parameters (tRCD = 13.91 ns, tRP = 13.91 ns), ODT configuration options, ZQ calibration support, write leveling capability, and thermal-grade validation for extended-temperature deployment.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, DLL-aligned DQ/DQS timing, and synchronous command decoding on CK/CK# differential clock edges. It supports programmable CAS Latency (CL = 13), CAS Write Latency (CWL = 13), additive latency (AL = 0, CL−1, CL−2), and posted CAS for optimized bus efficiency.

It features asynchronous RESET#, dynamic on-die termination (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, and dual-mode refresh (Auto Self-Refresh and Partial Array Self-Refresh) with mandatory ASR activation above 95°C - confirmed for the 11J speed grade per MR2 A6/A7 settings.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, CK/CK#, DQS/DQS#, DM, and address/command banks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W632GU6NB11J uniquely combines 105°C industrial-plus qualification, native DDR3L voltage optimization, and integrated ASR activation - making it the only option among the three qualified for uncooled automotive or industrial deployments above 95°C without host firmware intervention.

Availability

W632GU6NB11J is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU6NB11J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant timing robustness.

FAQ

What is the maximum operating frequency and corresponding CAS latency for W632GU6NB11J?

W632GU6NB11J is rated for DDR3L-1866 operation at 933 MHz clock frequency with CL = 13 (13-13-13 timing bin). Its tRCD and tRP minimums are both 13.91 ns, and it supports optional down-binning to CL = 11 or CL = 10 under specific conditions. The device achieves 1866 MT/s data transfer rate using double-data-rate architecture on a 16-bit bus.

Does W632GU6NB11J support operation at 1.5 V, and what are the implications?

Yes, W632GU6NB11J is backward compatible with 1.5 V ±0.075 V supplies per JEDEC DDR3 standards. However, it is optimized for 1.35 V (1.283–1.45 V) operation. Using 1.5 V does not extend timing margins or temperature range - the 105°C rating and ASR functionality remain valid, but power consumption increases approximately 18% versus 1.35 V operation.

How is thermal management handled above 95°C for W632GU6NB11J?

For operation above 95°C, W632GU6NB11J requires either Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b or 11b) or Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 01b). This doubles the refresh rate to 3.9 µS intervals, ensuring data retention without host controller intervention - a mandatory requirement confirmed for the 11J speed grade.

What ball-grid array package does W632GU6NB11J use, and is it JEDEC-compliant?

W632GU6NB11J uses a VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, 0.8 mm ball pitch) with RoHS-compliant, lead-free terminations. Its ball assignment, mechanical dimensions, and thermal characteristics comply fully with JEDEC MO-270AC standard for DDR3L SDRAM, enabling drop-in compatibility with existing DDR3L layout footprints.

Can W632GU6NB11J be used with write leveling and MPR for system-level calibration?

Yes, W632GU6NB11J fully supports write leveling for DQS-to-CK skew compensation and Multi-Purpose Register (MPR) readout of a fixed calibration bit pattern. These features are implemented per JEDEC JESD79-3F and are validated for the 11J speed grade - enabling robust signal integrity tuning in high-speed memory interfaces without requiring external test equipment.