Winbond Electronics Corporation W632GU6NB-11 TR

Overview

W632GU6NB-11 TR from Winbond is a 2G-bit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1.35V nominal supply with DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), supporting CAS Latency 5–11 and CWL 5–9. It delivers 1866 MT/s data rates in systems requiring low-voltage memory for industrial computing and embedded controllers.

For engineers reviewing the W632GU6NB-11 TR datasheet, W632GU6NB-11 TR pinout, W632GU6NB-11 TR application, or W632GU6NB-11 TR equivalent, key selection factors include its VFBGA-96 package, 1.35V operation with 1.5V backward compatibility, programmable ODT and ZQ calibration, and support for write leveling and multi-purpose register (MPR) timing calibration.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at cross-point edges, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS-clock timing across process/voltage/temperature variations.

It supports asynchronous RESET#, programmable mode registers (MR0–MR3) for CAS Latency, CWL, ODT RTT values, PASR, ASR, and dynamic ODT (Rtt_WR), plus ZQ calibration using an external 240Ω reference resistor to maintain output driver and termination impedance accuracy over temperature and voltage.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout follows JEDEC-standard DDR3L pin assignment for address, command, data, strobe, and power/ground distribution.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GU6NB-11 TR uniquely combines DDR3L-1866 performance, 95°C operation, ASR/PASR power management, and full JEDEC-compliant write leveling-enabling higher bandwidth and lower system power in thermally constrained industrial environments.

Availability

W632GU6NB-11 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and guaranteed temperature-rated performance.

Supply support for W632GU6NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity features like write leveling and ZQ calibration.

FAQ

What is the maximum operating frequency supported by W632GU6NB-11 TR?

W632GU6NB-11 TR supports DDR3L-1866 operation with a maximum clock frequency of 933 MHz (1866 MT/s), corresponding to a minimum tCK of 1.07 ns. This speed grade is validated for CL=13 and tRCD/tRP=13 ns under 0°C to 95°C case temperature conditions per JEDEC specification.

Does W632GU6NB-11 TR support both 1.35 V and 1.5 V supply voltages?

Yes, W632GU6NB-11 TR is fully backward compatible with 1.5 V DDR3 systems while optimized for 1.35 V DDR3L operation. It accepts VDD/VDDQ between 1.283 V and 1.45 V for DDR3L mode and 1.425 V to 1.575 V for DDR3 mode, with automatic detection via mode register settings and no hardware modification required.

How does the write leveling function work in W632GU6NB-11 TR?

W632GU6NB-11 TR implements JEDEC-standard write leveling by sampling CK at DQS input receivers during MPR read mode. The memory controller adjusts per-lane DQS delay until CK edge aligns with DQS center point, compensating for board-level skew. This calibration is performed once during initialization and stored in controller registers-not in W632GU6NB-11 TR itself.

What package type and ball count does W632GU6NB-11 TR use?

W632GU6NB-11 TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum thickness. It complies with JEDEC MO-270AC and is RoHS-compliant with lead-free terminations.

Can W632GU6NB-11 TR operate reliably at 95°C case temperature?

Yes, W632GU6NB-11 TR is rated for 0°C ≤ TCASE ≤ 95°C operation with full AC/DC specifications met. At temperatures above 85°C, it requires either Auto Self-Refresh (ASR) enabled via MR2 or Manual Self-Refresh with extended temperature capability to maintain tREFI = 3.9 µs, ensuring data retention integrity.