Winbond Electronics Corporation W632GU6NB-12

Overview

W632GU6NB-12 from Winbond Electronics is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at 1600 MT/s with CL=11, tRCD=tRP=11 ns, and 1.35V nominal supply. It delivers high-bandwidth memory for embedded controllers and industrial SoCs requiring low-voltage operation and extended temperature support up to 95°C. The device uses an 8-bit prefetch architecture with eight internal banks and supports programmable CAS Write Latency (CWL=7), ZQ calibration, and dynamic on-die termination.

For engineers reviewing the W632GU6NB-12 datasheet, W632GU6NB-12 pinout, W632GU6NB-12 application, or W632GU6NB-12 equivalent, key selection criteria include DDR3L-1600 timing compliance (11-11-11), VDD/VDDQ = 1.283–1.45V operation, industrial-grade thermal range, and VFBGA-96 package compatibility with JEDEC-standard DDR3L interface signaling.

Technical Context

This DDR3L SDRAM implements a source-synchronous interface with differential CK/CK# and DQS/DQS# pairs, where inputs are latched at the crosspoint of CK rising and CK# falling edges. All commands are registered on positive CK edges, while data transfers occur on both edges of DQS/DQS#.

The device supports asynchronous RESET#, programmable mode registers (MR0–MR3), multi-purpose register (MPR) readout for system calibration, and dual ODT modes-synchronous and dynamic-with configurable RTT values. It enables write leveling, partial array self-refresh (PASR), and auto self-refresh (ASR) for thermal-aware power management.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and lead-free, RoHS-compliant construction. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, and NC balls distributed for signal integrity and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125:A and IS43TR16128B-125KBL, the W632GU6NB-12 uniquely combines DDR3L-1600 timing (11-11-11), full industrial temperature support (0–95°C), dynamic ODT, and PASR - enabling lower system power, tighter timing margins, and simplified thermal management in space-constrained embedded platforms.

Availability

W632GU6NB-12 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W632GU6NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6NB-12 belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-sensitive, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature reliability and advanced calibration features.

FAQ

What is the maximum clock frequency supported by the W632GU6NB-12?

The W632GU6NB-12 supports a maximum clock frequency of 800 MHz (1600 MT/s data rate), corresponding to the DDR3L-1600 speed bin with CL=11, tRCD=11 ns, and tRP=11 ns. This is validated under VDD/VDDQ = 1.283–1.45 V and 0°C ≤ TCASE ≤ 95°C, per JEDEC JESD79-3F specification.

Does the W632GU6NB-12 support both DDR3 and DDR3L voltage levels?

Yes, the W632GU6NB-12 supports dual-voltage operation: it is fully compliant with DDR3L (1.35 V ±0.067 V) and backward-compatible with standard DDR3 (1.5 V ±0.075 V). Voltage switching is controlled externally; no mode register setting is required to toggle between the two standards.

How does the W632GU6NB-12 implement dynamic on-die termination (ODT)?

The W632GU6NB-12 implements dynamic ODT (Rtt_WR) via MR2 bit A2, enabling ODT activation only during WRITE bursts. This reduces noise on DQ/DQS lines during READ operations and improves signal integrity without increasing static power consumption - a key advantage over fixed-ODT DDR3L parts.

What package type and ball count does the W632GU6NB-12 use?

The W632GU6NB-12 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It is lead-free and RoHS-compliant, with JEDEC-standard ball assignments for address, data, control, and power/ground connections.

Can the W632GU6NB-12 operate at 95°C case temperature?

Yes, the W632GU6NB-12 is rated for 0°C ≤ TCASE ≤ 95°C. At temperatures above 85°C, the device requires either Auto Self-Refresh (ASR) enabled via MR2[A6]=1 or Manual Self-Refresh with extended temperature capability (MR2[A6]=0, MR2[A7]=1) to maintain tREFI = 3.9 µs and prevent data retention loss.