Winbond Electronics Corporation W632GU6NB12I

Overview

W632GU6NB12I from Winbond Electronics is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at DDR3L-1600 speed (800 MHz clock, 11-11-11 CL-tRCD-tRP), with 1.35 V nominal supply, industrial temperature range (−40°C to +95°C), and VFBGA-96 package. It serves as main system memory in embedded controllers, network edge devices, and industrial HMIs requiring low-voltage, high-density, JEDEC-compliant DRAM.

For engineers reviewing the W632GU6NB12I datasheet, W632GU6NB12I pinout, W632GU6NB12I application, or W632GU6NB12I equivalent, key selection factors include its DDR3L-1600 timing compliance, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) with dynamic Rtt_WR support, ZQ calibration capability, and industrial-grade thermal reliability up to +95°C case temperature.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and auto-precharge to maximize bus efficiency.

Functional features include asynchronous RESET#, multi-purpose register (MPR) for timing calibration bitstream readout, write leveling for per-lane skew compensation, and dual-mode ODT (synchronous and dynamic). Power management includes precharged/active power-down, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR) for fine-grained retention control.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16256B-125KBL and MT41K256M16TW-125:A, W632GU6NB12I uniquely delivers +95°C case-rated operation with integrated ASR/PASR and single-resistor ZQ calibration-critical for unventilated industrial deployments where thermal headroom and power predictability are constrained.

Availability

W632GU6NB12I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging subsystems, and smart energy gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU6NB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM for industrial, automotive, and communications markets.

W632GU6NB12I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with industrial temperature resilience and advanced power management.

FAQ

What is the maximum operating frequency supported by W632GU6NB12I?

W632GU6NB12I supports DDR3L-1600 operation at 800 MHz clock frequency (1600 MT/s data rate), with minimum timing parameters of tRCD = tRP = tAA = 13.75 ns and tRC = 48.75 ns. It is not rated for DDR3L-1866 or higher speeds; attempting to exceed DDR3L-1600 violates JEDEC AC specifications and may cause data corruption.

Does W632GU6NB12I support both 1.35 V and 1.5 V supply voltages?

Yes, W632GU6NB12I is fully backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V) while maintaining full AC/DC specifications. Its native DDR3L mode operates at 1.35 V nominal (1.283–1.45 V range), enabling lower power consumption and reduced thermal output in thermally sensitive designs.

How does the write leveling feature work in W632GU6NB12I?

W632GU6NB12I implements JEDEC-standard write leveling: the memory controller asserts DQS while holding CK stable, and the DRAM returns a phase-aligned strobe to allow measurement of DQS-to-CK skew per byte lane. This calibration is performed during initialization and enables precise WRITE timing margin optimization at 800 MHz.

What power-saving modes are available in W632GU6NB12I?

W632GU6NB12I supports precharged power-down, active power-down, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR). PASR allows selective bank refresh to reduce current by up to 40% versus full-array self-refresh, making it ideal for battery-backed or energy-harvesting applications.

Is W632GU6NB12I pin-compatible with other Winbond DDR3L SDRAMs in the same package?

W632GU6NB12I uses the standard VFBGA-96 ball map defined in JEDEC MO-270AC, and is pin-compatible with other Winbond DDR3L SDRAMs in the same density and package (e.g., W632GU6NB-12, W632GU6NB12J). However, speed bin (-12 vs. -12I vs. -12J) and temperature grade determine valid timing and thermal operation-not physical pinout.