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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W632GU6NB12I TR

Name: W632GU6NB12I TR
Brand: Winbond Electronics Corporation
SKU: W632GU6NB12I TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GU6NB12I TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W632GU6NB12I TR.pdf

Description:: IC DRAM 2GBIT 96-VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W632GU6NB12I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35V nominal supply, compliant with DDR3L-1600 (11-11-11) timing, rated for industrial temperature range (−40°C to +95°C), and packaged in a 96-ball VFBGA (7.5 × 13 mm). It serves as main system memory in embedded controllers, network processors, and industrial SoC platforms requiring low-voltage, high-density, JEDEC-compliant DRAM.

For engineers reviewing the W632GU6NB12I TR datasheet, W632GU6NB12I TR pinout, W632GU6NB12I TR application, or W632GU6NB12I TR equivalent, this page delivers verified DDR3L-1600 timing parameters, industrial-grade thermal validation, VFBGA ball mapping, on-die termination (ODT) configuration options, and direct alternatives supporting same-speed binning and JEDEC DDR3L command protocol compatibility.

Technical Context

This device implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write operation. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), and dynamic ODT (Rtt_WR) for signal integrity optimization during burst writes.

Key operational modes include auto-precharge, ZQ calibration for output driver and ODT impedance tuning, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-lane DQ-to-DQS skew compensation. The asynchronous RESET# pin enables deterministic power-up initialization and runtime reset independent of clock state.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16M words × 8 banks × 16 bits); supports 256 MB addressable space in x16 configuration
Data Rate	1600 MT/s (DDR3L-1600); requires 800 MHz differential clock input (tCK = 1.25 ns min)
Timing Bin	11-11-11 (tRCD/tRP/tRAS = 11 cycles @ 800 MHz = 13.75 ns each); validated for industrial −40°C to +95°C
Supply Voltage	VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V DDR3 systems
Burst Length	BL8 (fixed) and BC4 (on-the-fly selectable); enables full-page burst efficiency or partial-word masking
On-Die Termination	Programmable Rtt_Nom (60 Ω, 120 Ω, 40 Ω) and dynamic Rtt_WR (60 Ω, 120 Ω); reduces external termination components
Refresh Interval	tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C); supports Auto Self-Refresh (ASR) for extended temperature operation
Package	VFBGA-96 (7.5 × 13 mm, 0.8 mm ball pitch, RoHS-compliant, lead-free)

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-270DA standard for DDR3L SDRAM.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row/column address inputs; A10 controls auto-precharge; A13/A14 select bank group (BG0/BG1) in DDR3L-1600 mode
BA0–BA2	Bank Address	Selects one of eight internal banks; BA2 enables bank group addressing when enabled
CK / CK#	Differential Clock	Edge-triggered command latch reference; all commands sampled at CK rising / CK# falling crossing point
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; double-data-rate transfers aligned to DQS/DQS# edges
DQS / DQS#	Differential Strobe	Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data
DM0–DM1	Data Mask	Per-byte write mask for DQ[7:0] and DQ[15:8]; suppresses write data without interrupting burst sequence
RESET#	Asynchronous Reset	Active-low, level-sensitive input; initiates power-up initialization or runtime reset independent of clock
ODT	On-Die Termination Control	Dynamic enable for Rtt_Nom; used with MR1 to configure termination during reads/writes
WE#, RAS#, CAS#	Command Inputs	Standard DDR3 command pins; decoded with A0–A14/BA0–BA2 to generate ACT, READ, WRITE, PRE, REF, etc.
VDD / VDDQ	Power Supplies	Separate 1.35 V supplies for core (VDD) and I/O (VDDQ); decoupling required per JEDEC DDR3L layout guidelines

Key Features

Feature	Design Value
DDR3L Low-Voltage Operation	1.35 V nominal supply reduces active/idle power vs. 1.5 V DDR3; validated across full industrial temperature range
Dynamic On-Die Termination (Rtt_WR)	Enables per-write-cycle termination switching (60 Ω / 120 Ω); eliminates stub reflections during high-speed burst writes
Write Leveling Calibration	Hardware-supported per-lane DQ-to-DQS delay adjustment via MRS and MPR; essential for >1600 MT/s PCB layout margin
ZQ Calibration	One-time or periodic calibration using external 240 Ω ±1% resistor to ground; maintains output driver and ODT impedance accuracy over voltage/temperature
Multi-Purpose Register (MPR)	Predefined 128-bit pattern accessible via READ command; used for system-level timing margin verification and eye-diagram training
Auto Self-Refresh (ASR)	Temperature-triggered refresh rate doubling (tREFI = 3.9 µs) above 85°C; eliminates host controller intervention for extended-temp reliability

Applications

Industrial HMI Controllers	Network Edge Routers
Use Scenario: Real-time GUI rendering and multitask OS execution in panel-mounted HMIs deployed in factory automation environments. IC Role / Device Role / Timing Role: Primary system memory interfacing directly to ARM Cortex-A series MPU; provides 16-bit wide data path synchronized to 800 MHz DDR clock. Use Value: DDR3L-1600 bandwidth (3.2 GB/s peak) sustains concurrent video decode, Ethernet stack, and local storage I/O while maintaining −40°C to +95°C thermal compliance.	Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise switches with dual 10Gbps uplinks. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple traffic management engines; operates under strict tRCD/tRP timing constraints for low-latency queuing. Use Value: 11-11-11 timing bin ensures sub-14 ns row activation and precharge delays, enabling <100 ns average packet queue access latency at line rate.
Medical Imaging Gateways	Automated Test Equipment (ATE)
Use Scenario: DICOM image caching and real-time DICOM-to-JPEG2000 transcoding in portable ultrasound gateways. IC Role / Device Role / Timing Role: High-bandwidth frame buffer co-located with FPGA-based image processing pipeline; uses BL8 bursts for full-line pixel transfer. Use Value: Dynamic ODT (Rtt_WR) minimizes write-data jitter across 16-bit bus, preserving SNR in time-critical analog front-end sampling paths.	Use Scenario: Pattern memory for high-speed digital vector generation in semiconductor wafer test systems requiring nanosecond-level stimulus timing. IC Role / Device Role / Timing Role: Deterministic-access memory for test pattern storage; leverages posted CAS and AL=1 to hide command latency during rapid vector sequencing. Use Value: Asynchronous RESET# allows full memory reinitialization between test programs without clock gating or power cycle, reducing test cycle overhead.

Industrial HMI Controllers

Network Edge Routers

Use Scenario: Real-time GUI rendering and multitask OS execution in panel-mounted HMIs deployed in factory automation environments.

IC Role / Device Role / Timing Role: Primary system memory interfacing directly to ARM Cortex-A series MPU; provides 16-bit wide data path synchronized to 800 MHz DDR clock.

Use Value: DDR3L-1600 bandwidth (3.2 GB/s peak) sustains concurrent video decode, Ethernet stack, and local storage I/O while maintaining −40°C to +95°C thermal compliance.

Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise switches with dual 10Gbps uplinks.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple traffic management engines; operates under strict tRCD/tRP timing constraints for low-latency queuing.

Use Value: 11-11-11 timing bin ensures sub-14 ns row activation and precharge delays, enabling <100 ns average packet queue access latency at line rate.

Medical Imaging Gateways

Automated Test Equipment (ATE)

Use Scenario: DICOM image caching and real-time DICOM-to-JPEG2000 transcoding in portable ultrasound gateways.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer co-located with FPGA-based image processing pipeline; uses BL8 bursts for full-line pixel transfer.

Use Value: Dynamic ODT (Rtt_WR) minimizes write-data jitter across 16-bit bus, preserving SNR in time-critical analog front-end sampling paths.

Use Scenario: Pattern memory for high-speed digital vector generation in semiconductor wafer test systems requiring nanosecond-level stimulus timing.

IC Role / Device Role / Timing Role: Deterministic-access memory for test pattern storage; leverages posted CAS and AL=1 to hide command latency during rapid vector sequencing.

Use Value: Asynchronous RESET# allows full memory reinitialization between test programs without clock gating or power cycle, reducing test cycle overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS43TR16256B-125KBL	Same 2Gb x16 DDR3L-1600 density and VFBGA-96 package; CL=11, tRCD/tRP = 13.75 ns; supports −40°C to +95°C	Requires identical board layout; differs in ZQ calibration sequence and MPR pattern definition	Drop-in replacement if host controller firmware supports ISSI's MRS encoding and ZQ timing requirements
MT41K128M16JT-125:K	2Gb x16 DDR3L-1600 in 96-ball VFBGA; CL=11, tRCD/tRP = 13.75 ns; industrial temp rated; includes enhanced self-refresh exit timing	Uses Micron-specific ASR entry/exit handshake; slightly tighter tRFC spec (260 ns vs. 240 ns)	Valid alternative where JEDEC-standard ASR behavior is not required; verify tRFC裕度 in high-temperature refresh scenarios

Compared with W632GU6NB12I TR, IS43TR16256B-125KBL offers identical timing and thermal specs but diverges in MPR implementation, while MT41K128M16JT-125:K provides broader ASR robustness at the cost of stricter tRFC margin-both require validation of host controller's mode register programming and refresh scheduler logic.

Availability

W632GU6NB12I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU6NB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and networking markets.

The W632GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature resilience, and JEDEC-compliant interoperability with mainstream MPUs and FPGAs.

FAQ

What is the guaranteed operating temperature range for W632GU6NB12I TR?

W632GU6NB12I TR is specified for industrial operation from −40°C to +95°C case temperature (TCASE), validated per JEDEC JESD22-A104 and JESD22-A106 standards. This includes full AC/DC parameter compliance across the range, with mandatory Auto Self-Refresh (ASR) activation above 85°C to maintain tREFI = 3.9 µs.

Does W632GU6NB12I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W632GU6NB12I TR supports 1.5 V ± 0.075 V operation on both VDD and VDDQ, enabling drop-in replacement in legacy DDR3 designs. However, DDR3L-specific features like lower IDD currents and optimized tREFI scaling are only active at 1.35 V; 1.5 V operation retains full DDR3 command set and timing compatibility.

How is on-die termination configured on W632GU6NB12I TR?

W632GU6NB12I TR supports both static and dynamic ODT. Static Rtt_Nom values (60 Ω, 120 Ω, 40 Ω) are set via MR1 bits A9–A7. Dynamic Rtt_WR (60 Ω or 120 Ω) is enabled via MR2 bit A2 and activated automatically during WRITE bursts. ODT is disabled during reads unless explicitly enabled via MR1.

What is the purpose of the Multi-Purpose Register (MPR) in W632GU6NB12I TR?

The MPR in W632GU6NB12I TR outputs a fixed 128-bit pattern (0x0000_0000_0000_0000) upon READ command when MPR mode is enabled (MR3 A0 = 1). It is used for system-level timing margin analysis, DQ/DQS eye diagram measurement, and write leveling calibration-providing a known, noise-immune reference sequence.

Can W632GU6NB12I TR operate at DDR3L-1866 or DDR3L-2133 speeds?

No. W632GU6NB12I TR is speed-binned exclusively for DDR3L-1600 (11-11-11) operation at 800 MHz clock frequency. While the underlying die may share architecture with faster variants (e.g., W632GU6NB09I), the -12I suffix denotes factory characterization and guarantee only for 1600 MT/s timing; overclocking is not supported or validated.

W632GU6NB12I TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3L

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: -

Clock Frequency:: 800 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.283V ~ 1.45V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W632GU6NB12I TR FAQ

1.How can I place an order for W632GU6NB12I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6NB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6NB12I TR reliable?

The price and inventory of W632GU6NB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB12I TR is usually 5 days.

3.What payment methods are accepted for W632GU6NB12I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB12I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6NB12I TR?

W632GU6NB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6NB12I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6NB12I TR?

For technical support, including W632GU6NB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB12I TR requirements.

6.How does Aetrix verify that W632GU6NB12I TR is sourced from the original manufacturer or authorized distributors?

All W632GU6NB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB12I TR meets industry standards.

7.What is the process for return or replacement of W632GU6NB12I TR?

All W632GU6NB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB12I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6NB12I TR part is unused and in its original packaging.

Return procedure for W632GU6NB12I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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