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Winbond Electronics Corporation W632GU6NB12J

Part No.:
W632GU6NB12J
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW632GU6NB12J.pdf
Description:
IC DRAM 2GBIT 96-VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,983

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Product details

Overview

W632GU6NB12J from Winbond Electronics is a 2 Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35 V nominal supply, compliant with DDR3L-1600 (11-11-11) timing, rated for -40°C to +105°C industrial-plus temperature range, and packaged in a 96-ball VFBGA (7.5 × 13 mm). It serves as main memory or frame buffer in embedded controllers, network edge devices, and industrial HMIs requiring low-voltage operation and extended thermal reliability.

For engineers reviewing the W632GU6NB12J datasheet, W632GU6NB12J pinout, W632GU6NB12J application, or W632GU6NB12J equivalent, key selection criteria include its DDR3L-1600 speed bin with CL=11/CWL=7 support, programmable ODT and dynamic ODT modes, ZQ calibration capability, asynchronous RESET# input, and industrial-plus temperature qualification - all critical for thermal-stable memory subsystems in fanless or high-ambient deployments.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3L architecture with differential CK/CK# clock inputs and source-synchronous DQS/DQS# strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multiple power-down modes including precharged and active power-down.

Timing control includes programmable mode registers MR0–MR3 for CAS latency (CL = 5–14), CAS write latency (CWL = 5–10), partial array self-refresh (PASR), dynamic ODT (Rtt_WR), and multi-purpose register (MPR) readout for system-level timing calibration. ZQ calibration adjusts output driver and ODT impedance using an external 240 Ω resistor.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Gb (16,777,216 words × 8 banks × 16 bits); enables 256 MB of 16-bit wide memory space.
Data Rate 1600 MT/s (DDR3L-1600); supports 800 MHz clock frequency with tCK(AVG) = 1.25–1.5 ns for CL=11/CWL=7.
Supply Voltage VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); compatible with DDR3L low-power systems and backward-compatible to 1.5 V DDR3.
Operating Temperature -40°C to +105°C (industrial-plus grade); requires MR2 A6=1b (ASR enabled) or MR2 A6=0b/A7=1b (manual self-refresh) above 95°C.
CAS Latency CL = 11 (minimum) at DDR3L-1600; tRCD/tRP/tAA min = 13.75 ns; ensures deterministic read/write timing alignment.
On-Die Termination Programmable static ODT (RTT_NOM = 60/120/240 Ω) and dynamic ODT (Rtt_WR = 60/120/240 Ω); improves signal integrity on high-speed data buses.
Refresh Interval tREFI = 3.9 µs at 95°C < TCASE ≤ 105°C; mandates doubled refresh rate versus standard 7.8 µs for thermal stability.

Pinout & Package

Packaged in 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant lead-free construction.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs Row/column address bits for bank and page access; A10 controls auto-precharge.
BA0–BA2 Bank Address Inputs Select one of eight internal banks for concurrent operation and interleaved access.
CK / CK# Differential Clock Inputs Edge-triggered command latching at crosspoint; defines all timing windows and data valid windows.
CS# Chip Select Active-low enable for command decoding; deassertion halts all internal operations.
RAS#, CAS#, WE# Command Control Standard SDRAM command lines (Row Active, Column Address Strobe, Write Enable) decoded with address.
RESET# Asynchronous Reset Hardware-initiated initialization sequence; required for power-up and recovery from deep power-down.
DQ0–DQ15 Data I/O 16-bit bidirectional data bus; synchronized with DQS/DQS# for source-synchronous reads/writes.
DQS / DQS# Differential Data Strobe Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data.
DM0–DM1 Data Mask Per-byte write masking for DQ[7:0] and DQ[15:8]; suppresses invalid write data without command overhead.
ODT On-Die Termination Control Dynamic enable/disable of termination resistance on DQ/DQS/DM lines during reads/writes per MR1/MR2 settings.
VDD / VDDQ Power Supplies Separate 1.35 V core (VDD) and I/O (VDDQ) supplies; allows independent voltage scaling and noise isolation.
VSS Ground Signal and power return reference; multiple balls ensure low-impedance return path for high-speed switching.

Key Features

Feature Design Value
DDR3L-1600 Speed Bin (11-11-11) Guarantees tRCD/tRP/tAA ≤ 13.75 ns at 800 MHz clock; enables deterministic timing margins in real-time embedded systems.
Industrial-Plus Temperature Range Rated for -40°C to +105°C case temperature; validated with ASR or manual self-refresh mode for sustained operation above 95°C.
ZQ Calibration Uses external 240 Ω resistor to calibrate output driver strength and ODT impedance; maintains signal integrity across voltage/temperature drift.
Dynamic ODT (Rtt_WR) Switches termination resistance on DQ/DQS/DM lines during write bursts only; reduces standby power and improves write eye margin.
Multi-Purpose Register (MPR) Outputs predefined calibration pattern on DQ pins during MPR read; enables system-level timing margin verification without external pattern generator.
Write Leveling Support Adjusts DQS-to-CK skew per byte lane via MR1 AL=0/1/2; compensates for PCB trace length mismatch in high-density memory interfaces.

Applications

Industrial HMI Systems Network Edge Routers

Use Scenario: Fanless human-machine interface panels deployed in factory automation cabinets with ambient temperatures up to 105°C.

IC Role / Device Role / Timing Role: Primary working memory for ARM-based SoC running Linux GUI stack; provides 16-bit wide data path with DDR3L-1600 bandwidth.

Use Value: Extended temperature rating eliminates need for thermal derating or forced cooling; ASR mode ensures reliable refresh under thermal stress.

Use Scenario: Layer 3 packet forwarding engines in compact carrier-grade edge routers with space-constrained PCB layouts.

IC Role / Device Role / Timing Role: Frame buffer and packet buffer memory interfaced to multi-core NPU; operates at 800 MHz with CL=11 for deterministic latency.

Use Value: Dynamic ODT and write leveling reduce signal integrity risk on dense 16-bit memory bus; VFBGA footprint saves board area vs. TSOP.

Medical Imaging Terminals Automotive ADAS Camera Modules

Use Scenario: Portable ultrasound display units requiring continuous image buffering and real-time rendering in clinical environments.

IC Role / Device Role / Timing Role: Dual-role memory supporting both video frame storage and application code execution; uses burst reads/writes with auto-precharge.

Use Value: Low 1.35 V operation reduces system power and heat generation; MPR readout validates timing margins during production test.

Use Scenario: Compact rear-view and surround-view camera ECUs mounted near vehicle exteriors with wide thermal cycling exposure.

IC Role / Device Role / Timing Role: High-reliability frame buffer for image sensor pipeline; interfaces to MIPI CSI-2 bridge IC with synchronous DDR3L timing.

Use Value: Industrial-plus qualification (-40°C to +105°C) and RESET#-driven initialization ensure robust boot and recovery after cold starts or thermal shock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS43TR16256B-125KBL Same density (2 Gb), 96-ball VFBGA, DDR3L-1600, but rated -40°C to +95°C (not +105°C); no ASR support above 95°C. Lacks industrial-plus thermal margin; unsuitable for sustained >95°C operation without external thermal management. Choose W632GU6NB12J when ambient exceeds 95°C or ASR is required; IS43TR16256B-125KBL fits cost-sensitive 95°C-limited designs.
MT41K128M16JT-125K 2 Gb DDR3L-1600 in 96-ball VFBGA, -40°C to +95°C, JEDEC-compliant; supports same CL/CWL ranges but no PASR or MPR. No partial array self-refresh or MPR calibration pattern; less flexible for ultra-low-power or margin-critical validation use cases. W632GU6NB12J preferred for thermal resilience and system-level timing validation; MT41K128M16JT-125K suits standard DDR3L-1600 applications with broad vendor support.

Compared with IS43TR16256B-125KBL and MT41K128M16JT-125K, W632GU6NB12J uniquely delivers +105°C operation with mandatory ASR support and integrated MPR-based calibration - making it the only option among the three qualified for uncooled industrial-plus deployments requiring guaranteed refresh stability and production-level timing margin verification.

Availability

W632GU6NB12J is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W632GU6NB12J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GU6NB12J belongs to Winbond's DDR3L SDRAM product line, designed specifically for thermally demanding embedded applications where low-voltage operation, extended temperature reliability, and JEDEC-compliant timing predictability are essential.

FAQ

What is the maximum operating frequency of the W632GU6NB12J?

The W632GU6NB12J is rated for DDR3L-1600 operation, supporting a maximum clock frequency of 800 MHz (1600 MT/s data rate). Its tCK(AVG) specification is 1.25–1.5 ns for CL=11/CWL=7 configurations, and it meets all AC timing requirements at this speed under VDD/VDDQ = 1.283–1.45 V and -40°C to +105°C conditions. The device does not support higher bins such as DDR3L-1866 or DDR3L-2133.

Does the W632GU6NB12J support backward compatibility with standard 1.5 V DDR3 systems?

Yes, the W632GU6NB12J supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is backward compatible with 1.5 V ± 0.075 V DDR3 systems. This is achieved through internal voltage regulation and level-shifting circuitry. However, when operated at 1.5 V, the device must still comply with DDR3L timing specifications and cannot be used as a drop-in replacement for legacy DDR3 parts without verifying timing margins and power sequencing.

How is thermal management handled above 95°C for the W632GU6NB12J?

Above 95°C case temperature, the W632GU6NB12J requires either Auto Self-Refresh (ASR) mode (MR2 A6 = 1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b) to maintain reliable refresh operation. This doubles the refresh rate (tREFI = 3.9 µs instead of 7.8 µs) to prevent data retention loss. The device's -40°C to +105°C rating is validated only when one of these modes is enabled per JEDEC JESD209-2 specification.

What is the purpose of the Multi-Purpose Register (MPR) in the W632GU6NB12J?

The MPR in the W632GU6NB12J outputs a fixed 128-bit calibration pattern on the DQ pins during MPR read commands. This pattern is used for system-level timing margin analysis - particularly for verifying setup/hold windows and DQS-to-CK alignment - without requiring external test equipment. It directly supports write leveling and board-level signal integrity validation during bring-up and production testing of the W632GU6NB12J.

Can the W632GU6NB12J be used in place of a standard DDR3 part without design changes?

The W632GU6NB12J is pin-compatible with industry-standard 96-ball DDR3L SDRAMs (e.g., same ball map as JEDEC MO-273 VFBGA), but it is not a direct drop-in replacement for 1.5 V DDR3 parts due to differences in power sequencing, reset behavior, and optional features like ASR and MPR. While electrical interface is compatible, firmware and BIOS must be updated to configure MR2 for extended temperature operation and enable required DDR3L-specific modes.

W632GU6NB12J Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
-
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 105°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W632GU6NB12J FAQ

1.How can I place an order for W632GU6NB12J through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6NB12J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6NB12J reliable?

The price and inventory of W632GU6NB12J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB12J is usually 5 days.

3.What payment methods are accepted for W632GU6NB12J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB12J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6NB12J?

W632GU6NB12J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6NB12J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6NB12J?

For technical support, including W632GU6NB12J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB12J requirements.

6.How does Aetrix verify that W632GU6NB12J is sourced from the original manufacturer or authorized distributors?

All W632GU6NB12J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB12J meets industry standards.

7.What is the process for return or replacement of W632GU6NB12J?

All W632GU6NB12J units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB12J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6NB12J part is unused and in its original packaging.

Return procedure for W632GU6NB12J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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