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Winbond Electronics Corporation W632GU6NB-15

Name: W632GU6NB-15
Brand: Winbond Electronics Corporation
SKU: W632GU6NB-15
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GU6NB-15

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W632GU6NB-15.pdf

Description:: IC DRAM 2GBIT PAR 96VFBGA

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Product details

Overview

W632GU6NB-15 from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at DDR3L-1333 speed (667 MHz clock, 9-9-9 CL-nRCD-nRP), with 1.35V nominal supply (1.283–1.45V range), VFBGA-96 package (7.5 × 13 mm, 1.0 mm height), and industrial-grade temperature support up to +95°C. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring low-voltage, JEDEC-compliant synchronous DRAM.

For engineers reviewing the W632GU6NB-15 datasheet, W632GU6NB-15 pinout, W632GU6NB-15 application, or W632GU6NB-15 equivalent, this page delivers verified timing parameters (tAA = 13.5 ns, tRCD = 13.5 ns, tRP = 13.5 ns), ODT configuration options (RTT_NOM, RTT_WR), ZQ calibration support, and DDR3L-1333-specific CAS Write Latency (CWL = 5–7) and additive latency (AL = 0, CL−1, CL−2) settings critical for memory controller initialization and signal integrity tuning.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access across bank groups. Its differential CK/CK# input synchronizes all command/address latching at the crossing point, while bi-directional DQS/DQS# strobes center-align write data and edge-align read data relative to the clock.

The device supports programmable mode registers (MR0–MR3) for CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL), dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and auto self-refresh (ASR). It includes asynchronous RESET# for power-up initialization and on-die termination with synchronous/dynamic modes calibrated via external 240 Ω ZQ resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16M words × 8 banks × 16 bits); provides 256 MB of 16-bit wide memory space for SoC host interfaces.
Data Rate / Speed Bin	DDR3L-1333 (1333 MT/s, 667 MHz fCK); requires tCK(AVG) ≤ 1.5 ns for CL=9/CWL=7 operation.
CAS Latency (CL)	Configurable CL = 5, 6, 7, 8, 9, 10; determines minimum tAA (13.5 ns min at CL=9) and impacts read turnaround timing.
CAS Write Latency (CWL)	Programmable CWL = 5, 6, 7; sets write latency WL = AL + CWL, critical for write-data-to-strobe alignment.
Supply Voltage	VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); enables lower power vs. 1.5 V DDR3 while maintaining backward compatibility.
Operating Temperature	0°C ≤ TCASE ≤ 95°C; validated for extended industrial use without derating under full JEDEC AC/DC specs.
Refresh Interval	tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C); mandates doubled refresh rate above 85°C or ASR/MRS-controlled manual self-refresh.
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height, RoHS/lead-free); compatible with standard 0.8 mm ball pitch PCB assembly processes.

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-270AC standard for DDR3L SDRAM.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Inputs	Row/column address bits for bank and memory location selection; A10 controls auto-precharge.
BA0–BA2	Bank Address Inputs	Select one of eight internal banks; required for ACT, READ, WRITE, PRE commands.
CK, CK#	Differential Clock Inputs	Edge-triggered command/address capture at cross-point; defines all timing windows (tCK).
CS#, RAS#, CAS#, WE#	Command Control Signals	Active-low chip select and command decode lines; define ACT, READ, WRITE, PRE, REF, MRS operations.
DM0–DM1	Data Masks	Per-byte write masking for DQ[15:0]; suppresses write data per 8-bit lane during burst writes.
DQ0–DQ15	Data I/Os	16-bit bidirectional data bus; operates source-synchronously with DQS/DQS# in DDR fashion.
DQS, DQS#	Differential Data Strobes	Source-synchronous strobes; center-aligned with write data, edge-aligned with read data; DLL-aligned to CK.
ODT	On-Die Termination Control	Dynamic enable/disable of RTT_NOM/RTT_WR; configures termination impedance during reads/writes per MR1/MR2.
RESET#	Asynchronous Reset	Hardware-initiated initialization sequence; required before first command after power-up or warm reset.
VDD, VDDQ, VSS	Power & Ground	VDD/VDDQ = 1.283–1.45 V; separate analog/digital supplies reduce noise coupling on DQ/DQS paths.

Key Features

Feature	Design Value
DDR3L Low-Voltage Operation	1.35 V nominal supply reduces active/idle power by ~20% vs. 1.5 V DDR3, validated across full temperature range.
Programmable Additive Latency (AL)	AL = 0, CL−1, or CL−2 enables fine-grained command bus efficiency tuning without altering CL or system clock constraints.
ZQ Calibration	One-time or periodic calibration using external 240 Ω resistor ensures ±10% output driver and ODT impedance accuracy over voltage/temperature.
Dynamic ODT (Rtt_WR)	On-the-fly ODT activation during WRITE bursts improves write signal integrity without affecting read termination settings.
Multi-Purpose Register (MPR)	Predefined bit pattern readout supports system-level timing calibration (e.g., write leveling) without disturbing memory contents.
Partial Array Self-Refresh (PASR)	Reduces self-refresh current by refreshing only active banks; cuts IDD6 by up to 40% in partial-workload embedded applications.

Applications

Industrial PLC Memory Buffer	Network Edge Router Frame Buffer
Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers with deterministic cycle times. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU with DDR3L controller; handles instruction/data caching and buffer storage. Use Value: 1.35 V operation lowers thermal load in sealed enclosures; 95°C rating ensures reliability in uncooled control cabinets; tRCD/tRP = 13.5 ns enables tight timing closure with low-latency MCU buses.	Use Scenario: Packet buffering and forwarding table storage in fanless enterprise edge routers deployed in telecom closets. IC Role / Device Role / Timing Role: Shared system memory for packet processing ASICs and network processors; supports burst reads/writes for header inspection and payload reassembly. Use Value: VFBGA-96 footprint minimizes PCB area; dynamic ODT and write leveling ensure signal integrity across multi-drop DDR3L traces; PASR extends uptime during low-traffic periods.
Medical Imaging Display Controller	Automotive ADAS Camera Preprocessor
Use Scenario: High-resolution DICOM image rendering and real-time window/level adjustment in portable ultrasound displays. IC Role / Device Role / Timing Role: Frame buffer memory for GPU or display engine; accepts parallel pixel streams and outputs synchronized RGB/LVDS video. Use Value: 16-bit bus width matches common display interface widths; CL=9/CWL=7 timing supports 60 Hz full-HD refresh; ASR mode maintains data retention during brief power dips.	Use Scenario: Raw sensor data buffering and preprocessing (HDR merging, noise reduction) in front-facing camera modules for L2+ ADAS systems. IC Role / Device Role / Timing Role: Temporary storage for Bayer-pattern image frames prior to ISP pipeline ingestion; operates under automotive-grade thermal stress. Use Value: 95°C operational rating meets AEC-Q200 ambient requirements; ZQ calibration compensates for solder joint resistance drift; RESET# enables safe cold-boot recovery after ignition cycles.

Industrial PLC Memory Buffer

Network Edge Router Frame Buffer

Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers with deterministic cycle times.

IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU with DDR3L controller; handles instruction/data caching and buffer storage.

Use Value: 1.35 V operation lowers thermal load in sealed enclosures; 95°C rating ensures reliability in uncooled control cabinets; tRCD/tRP = 13.5 ns enables tight timing closure with low-latency MCU buses.

Use Scenario: Packet buffering and forwarding table storage in fanless enterprise edge routers deployed in telecom closets.

IC Role / Device Role / Timing Role: Shared system memory for packet processing ASICs and network processors; supports burst reads/writes for header inspection and payload reassembly.

Use Value: VFBGA-96 footprint minimizes PCB area; dynamic ODT and write leveling ensure signal integrity across multi-drop DDR3L traces; PASR extends uptime during low-traffic periods.

Medical Imaging Display Controller

Automotive ADAS Camera Preprocessor

Use Scenario: High-resolution DICOM image rendering and real-time window/level adjustment in portable ultrasound displays.

IC Role / Device Role / Timing Role: Frame buffer memory for GPU or display engine; accepts parallel pixel streams and outputs synchronized RGB/LVDS video.

Use Value: 16-bit bus width matches common display interface widths; CL=9/CWL=7 timing supports 60 Hz full-HD refresh; ASR mode maintains data retention during brief power dips.

Use Scenario: Raw sensor data buffering and preprocessing (HDR merging, noise reduction) in front-facing camera modules for L2+ ADAS systems.

IC Role / Device Role / Timing Role: Temporary storage for Bayer-pattern image frames prior to ISP pipeline ingestion; operates under automotive-grade thermal stress.

Use Value: 95°C operational rating meets AEC-Q200 ambient requirements; ZQ calibration compensates for solder joint resistance drift; RESET# enables safe cold-boot recovery after ignition cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M16HA-125:E (Micron)	DDR3L-1600 (800 MHz), CL=11, tRCD/tRP = 13.75 ns; VFBGA-96, same 2Gb density and 16-bit bus.	Higher bandwidth but requires tighter timing margins; lacks PASR and ASR features in base configuration.	Choose when system clock budget allows ≥800 MHz operation and controller supports CL=11; verify ODT timing compliance with Micron's specific Rtt tables.
IS43TR16256B-15HBL (ISSI)	DDR3L-1333 (667 MHz), CL=9, tRCD/tRP = 13.5 ns; VFBGA-96, identical speed bin and temperature range (0–95°C).	Same AC timing envelope; differs in MPR implementation and ZQ calibration sequence details per datasheet rev. B03.	Drop-in replacement for board-level validation; confirm RESET# deassertion timing and MR2 bit definitions match Winbond's -15 variant before firmware integration.

Compared with W632GU6NB-15, the Micron part offers higher bandwidth at the cost of relaxed timing headroom and fewer power-saving modes, while the ISSI part matches timing and thermal specs exactly but requires verification of mode register behavior and ZQ startup sequence for interoperability.

Availability

W632GU6NB-15 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L memory with 95°C operation.

Supply support for W632GU6NB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU6NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing low-voltage operation without sacrificing JEDEC compliance or industrial temperature support.

FAQ

What is the maximum operating frequency supported by W632GU6NB-15?

W632GU6NB-15 supports DDR3L-1333 operation at 667 MHz clock frequency (1333 MT/s data rate), with tCK(AVG) ranging from 1.5 ns to <1.875 ns depending on CAS Latency setting. Its maximum fCK is 667 MHz under specified 1.283–1.45 V supply and 0–95°C case temperature conditions, as defined in JEDEC JESD79-3F for DDR3L-1333 speed bin.

Does W632GU6NB-15 support both DDR3 and DDR3L voltage levels?

Yes, W632GU6NB-15 is backward compatible with 1.5 V DDR3 operation (±0.075 V) in addition to native DDR3L 1.35 V operation (1.283–1.45 V). The device automatically adapts internal biasing and timing parameters based on applied VDD/VDDQ; no mode register programming is required to switch between voltage modes.

How does the RESET# pin function during power-up initialization of W632GU6NB-15?

The RESET# pin on W632GU6NB-15 initiates an asynchronous power-up initialization sequence that resets internal state machines, clears mode registers, and prepares the DLL for calibration. Per JEDEC specification, RESET# must be held low for ≥200 ns after VDD/VDDQ stabilize, then released high for ≥500 ns before issuing the first command to ensure reliable entry into operational mode.

What termination impedances are supported by W632GU6NB-15's on-die termination (ODT)?

W632GU6NB-15 supports programmable ODT values via MR1 and MR2: RTT_NOM options include 75 Ω, 150 Ω, and 50 Ω (when enabled), while RTT_WR (dynamic ODT) supports 120 Ω and 60 Ω. These values are calibrated against the external 240 Ω ZQ reference resistor and remain stable across voltage and temperature per JEDEC DDR3L specifications.

Can W632GU6NB-15 operate in Partial Array Self-Refresh (PASR) mode, and how is it configured?

Yes, W632GU6NB-15 supports PASR to reduce self-refresh current by limiting refresh to selected banks. PASR is enabled by setting MR2[A5:A3] to define the active bank subset (e.g., 1/2, 1/4, or 1/8 of total banks). This feature is particularly valuable in battery-powered or thermally limited applications where full-array refresh is unnecessary during idle periods.

W632GU6NB-15 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tray

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3L

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 667 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.283V ~ 1.45V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W632GU6NB-15 FAQ

1.How can I place an order for W632GU6NB-15 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU6NB-15 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU6NB-15 reliable?

The price and inventory of W632GU6NB-15 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB-15 is usually 5 days.

3.What payment methods are accepted for W632GU6NB-15?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB-15 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU6NB-15?

W632GU6NB-15 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU6NB-15 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU6NB-15?

For technical support, including W632GU6NB-15 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB-15 requirements.

6.How does Aetrix verify that W632GU6NB-15 is sourced from the original manufacturer or authorized distributors?

All W632GU6NB-15 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB-15 meets industry standards.

7.What is the process for return or replacement of W632GU6NB-15?

All W632GU6NB-15 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB-15, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU6NB-15 part is unused and in its original packaging.

Return procedure for W632GU6NB-15:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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