Winbond Electronics Corporation W632GU6NB15I TR

Overview

W632GU6NB15I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at DDR3L-1333 speed (9-9-9 CL-tRCD-tRP), with 1.35V nominal supply, industrial temperature range (–40°C to +95°C), and VFBGA-96 package. It delivers reliable memory buffering for embedded controllers, network processors, and industrial HMIs requiring low-voltage, high-density synchronous DRAM with programmable CAS Write Latency and on-die termination.

For engineers reviewing the W632GU6NB15I TR datasheet, W632GU6NB15I TR pinout, W632GU6NB15I TR application, or W632GU6NB15I TR equivalent, this page provides verified timing parameters, ball configuration, ODT and ZQ calibration behavior, industrial-grade thermal validation, and direct alternatives for DDR3L-1333 memory substitution in space-constrained designs.

Technical Context

This DDR3L SDRAM implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write timing. It supports programmable CAS Latency (CL = 5–10), additive latency (AL = 0, CL−1, CL−2), and CAS Write Latency (CWL = 5–7) per JEDEC JESD79-3F.

Key operational features include asynchronous RESET#, ZQ calibration using external 240Ω ±1% resistor, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, and partial array self-refresh (PASR) for power optimization. The device complies fully with DDR3L-1333 (9-9-9) timing at 667 MHz clock frequency under industrial temperature conditions.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, and ZQ pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Compared with MT41K128M16JT-125:J and IS43TR16256B-125KBL, the W632GU6NB15I TR delivers higher guaranteed data rate (1333 MT/s vs. 1250 MT/s), integrated MPR for automated write leveling, and tighter tAA/tRCD/tRP (13.5 ns) enabling more robust timing closure in thermally aggressive layouts.

Availability

W632GU6NB15I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, and medical imaging terminals requiring stable component supply, long-lifecycle support, and RoHS-compliant DDR3L memory with industrial temperature qualification.

Supply support for W632GU6NB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature resilience, and JEDEC-compliant interoperability with mainstream memory controllers.

FAQ

What is the maximum clock frequency supported by W632GU6NB15I TR?

The W632GU6NB15I TR is rated for DDR3L-1333 operation, supporting a maximum clock frequency of 667 MHz (1333 MT/s). This is validated across its full industrial temperature range (–40°C to +95°C) with tCK(AVG) = 1.5 ns minimum and CL = 9, tRCD = tRP = 13.5 ns timing parameters.

Does W632GU6NB15I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W632GU6NB15I TR supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L) and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. No hardware modification is needed-VDD and VDDQ can be supplied at either voltage, and all DC/AC specifications remain valid per JEDEC JESD79-3F.

How does the ZQ calibration function work on W632GU6NB15I TR?

The W632GU6NB15I TR uses its ZQ pin to connect to a single external 240 Ω ±1% resistor to ground. During ZQ calibration commands, internal circuitry measures this reference to trim output driver strength and on-die termination (ODT) impedances. This ensures consistent signal integrity across voltage and temperature without requiring board-level resistor networks.

What is the purpose of the Multi-Purpose Register (MPR) in W632GU6NB15I TR?

The MPR in W632GU6NB15I TR stores a fixed 128-bit pattern used exclusively for system-level timing calibration-most notably write leveling. When enabled via mode register, the MPR outputs this pattern on DQ pins instead of memory data, allowing the memory controller to adjust DQS-to-clock skew without accessing actual stored content or disrupting normal operation.

Can W632GU6NB15I TR operate reliably at +95°C case temperature?

Yes, W632GU6NB15I TR is explicitly qualified for –40°C ≤ TCASE ≤ +95°C. At temperatures above +85°C, it requires doubled auto-refresh frequency (tREFI = 3.9 µs), achievable either by enabling Auto Self-Refresh (ASR) via MR2 or using Manual Self-Refresh with Extended Temperature Range mode (MR2 A6 = 0, A7 = 1), both confirmed in the device's datasheet revision A02.