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Winbond Electronics Corporation W632GU6NB15J
- Part No.:
- W632GU6NB15J
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W632GU6NB15J.pdf
- Description:
- IC DRAM 2GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,453
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Product details
Overview
W632GU6NB15J from Winbond is a 2 Gbit DDR3L SDRAM organized as 16M × 8 banks × 16 bits, operating at 1333 MT/s (DDR3L-1333, CL=9), with 1.35 V nominal supply, industrial-plus temperature range (–40°C to +105°C), and VFBGA-96 package. It serves as main memory in embedded computing, networking equipment, and industrial controllers requiring extended thermal reliability.
For engineers reviewing the W632GU6NB15J datasheet, W632GU6NB15J pinout, W632GU6NB15J application, or W632GU6NB15J equivalent, this page delivers verified timing parameters, ODT configuration options, ZQ calibration support, write leveling capability, and JEDEC-compliant DDR3L-1333 operation under extended temperature conditions.
Technical Context
This DDR3L SDRAM implements eight internal banks, 8-bit prefetch architecture, and source-synchronous I/O with differential DQS/DQS# strobes aligned to CK/CK#. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
Key control features include asynchronous RESET#, on-die termination (ODT) with dynamic Rtt_WR mode, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for system timing calibration, and partial array self-refresh (PASR) for power optimization. The device complies fully with JEDEC DDR3L standard JESD79-3F at 1.35 V and maintains backward compatibility with 1.5 V DDR3 systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gbit (16M × 8 banks × 16 bits) |
| Data Rate | 1333 MT/s (DDR3L-1333, tCK = 1.5 ns min) |
| CAS Latency (CL) | Configurable CL = 5–10; CL = 9 used for DDR3L-1333 timing (tRCD/tRP = 9 cycles) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); supports 1.5 V DDR3 backward compatibility |
| Operating Temperature | –40°C ≤ TCASE ≤ +105°C (industrial-plus grade, requires ASR or Manual Self-Refresh above 95°C) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 3.9 µs at 95°C < TCASE ≤ 105°C (doubled refresh rate required) |
| Power Management | Supports Precharged Power Down, Active Power Down, Auto Self-Refresh (ASR), and PASR |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Ball map follows JEDEC MO-270AB standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address inputs; A10 controls auto-precharge; A12/A13 select bank group (DDR3L) |
| BA0–BA2 | Bank Address | Select one of eight internal banks; BA2 enables bank group addressing |
| CK / CK# | Differential Clock | Edge-triggered command latch point; all commands sampled at CK rising / CK# falling crossing |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS#; supports DM masking |
| DQS / DQS# | Differential Strobe | Read: edge-aligned with DQ; Write: center-aligned with DQ; DLL-aligned to CK/CK# |
| DM0–DM1 | Data Mask | Per-byte write mask (DM0 for DQ0–7; DM1 for DQ8–15); active-high during write bursts |
| RESET# | Asynchronous Reset | Active-low; initiates power-up initialization sequence and resets internal state machines |
| ODT | On-Die Termination Control | Dynamic ODT enable; selects Rtt_NOM/Rtt_WR values per MR1/MR2; supports synchronous and asynchronous modes |
| WE#, CAS#, RAS#, CS# | Command Inputs | Standard DDR3 command signals; decoded on every CK rising edge to generate internal operations |
| VDD / VDDQ / VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS distributed across 24 balls; decoupling critical for signal integrity at 1333 MT/s |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | CWL = 5–7 selected per frequency; WL = AL + CWL ensures precise write timing alignment at 1333 MT/s |
| ZQ Calibration | Uses external 240 Ω ±1 % resistor to calibrate output driver impedance and ODT values; required after power-up and temperature shifts |
| Write Leveling | Enables per-lane DQS-to-CK skew compensation during initialization; essential for reliable high-speed write capture |
| Multi-Purpose Register (MPR) | Provides predefined read pattern (0x00000000) for system-level timing margin verification without disturbing memory contents |
| Dynamic ODT (Rtt_WR) | Activates ODT only during write operations on DQ/DQS lines; reduces standby power and improves write signal integrity |
| Extended Temp Self-Refresh | MR2 bit A6/A7 configures Manual Self-Refresh or Auto Self-Refresh (ASR) for stable operation up to +105°C |
Applications
| Industrial PLC Controllers | Telecom Line Cards |
|---|---|
|
Use Scenario: Real-time motion control and I/O scanning in programmable logic controllers deployed in factory environments with ambient temperatures up to +105°C. IC Role / Device Role / Timing Role: Primary working memory buffer for firmware execution and process data storage; interfaces directly with ARM Cortex-A9 or RISC-V SoCs via 16-bit DDR3L bus. Use Value: Extended temperature rating eliminates need for local cooling; DDR3L-1333 bandwidth meets deterministic scan cycle timing; ASR mode ensures uninterrupted operation during thermal transients. |
Use Scenario: Packet buffering and forwarding table storage in carrier-grade Ethernet line cards operating in temperature-controlled but thermally dense chassis. IC Role / Device Role / Timing Role: High-reliability, low-power memory for network processor co-processing; supports burst reads/writes synchronized to 133 MHz system clock domain. Use Value: Dynamic ODT and write leveling ensure signal integrity across 10+ inch PCB traces; VFBGA-96 footprint enables dense memory population without routing congestion. |
| Medical Imaging Systems | Automotive ADAS ECUs |
|
Use Scenario: Frame buffer and intermediate result storage in portable ultrasound and digital X-ray units where thermal cycling and long-term reliability are critical. IC Role / Device Role / Timing Role: Dual-role memory supporting both real-time acquisition buffers and post-processing scratchpad; operates under JEDEC industrial-plus qualification. Use Value: 1.35 V operation reduces system power and heat generation; PASR allows selective bank refresh during idle periods to extend battery life. |
Use Scenario: Vision processing memory in automotive surround-view and lane-departure ECUs exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: Low-latency working memory for TI TDA3x or NXP S32V234 vision processors; configured for CL=9, CWL=7, AL=0 for optimal read/write balance. Use Value: Guaranteed operation at +105°C case temperature avoids derating; RESET# pin enables safe cold-boot recovery after vehicle ignition cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-15JBLI | Same density (2 Gbit), same VFBGA-96, DDR3L-1333, –40°C to +105°C; differs in ODT timing behavior and MPR implementation | Requires different ZQ calibration sequence; no support for PASR or ASR at +105°C | Valid alternative if system does not use PASR or ASR; verify reset initialization flow and ODT exit timing against W632GU6NB15J |
| MT41K128M16JT-125:K | 2 Gbit DDR3L, VFBGA-96, –40°C to +95°C (not +105°C); CL=9 at 1333 MT/s; JEDEC JESD209-3 compliant | Limited to +95°C case temperature; lacks industrial-plus qualification and extended-temp self-refresh modes | Only suitable where ambient does not exceed +95°C; requires redesign of thermal management or refresh handling if migrating from W632GU6NB15J |
Compared with IS43TR16128B-15JBLI and MT41K128M16JT-125:K, W632GU6NB15J uniquely supports full ASR/PASR functionality and guaranteed operation up to +105°C case temperature while maintaining identical pinout and DDR3L-1333 timing - making it the only drop-in option for thermally demanding industrial and automotive ADAS designs.
Availability
W632GU6NB15J is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU6NB15J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W632GU6NB15J belongs to Winbond's DDR3L SDRAM product line, designed specifically for high-reliability embedded systems requiring extended temperature operation, low-voltage efficiency, and JEDEC-compliant interoperability with mainstream memory controllers.
FAQ
What is the maximum operating temperature specification for W632GU6NB15J?
W632GU6NB15J is rated for –40°C to +105°C case temperature (TCASE). At temperatures above +95°C, JEDEC requires either Auto Self-Refresh (ASR) enabled via MR2[A6]=1 or Manual Self-Refresh mode to maintain data retention. This is enforced by doubling the refresh rate to tREFI = 3.9 µS.
Does W632GU6NB15J support both DDR3 and DDR3L voltage levels?
Yes, W632GU6NB15J supports dual-voltage operation: 1.35 V ±0.067 V for DDR3L mode and 1.5 V ±0.075 V for backward-compatible DDR3 mode. Voltage switching must follow the sequence defined in Section 11.4 of the datasheet to avoid functional disruption.
How is write leveling implemented on W632GU6NB15J?
W632GU6NB15J implements JEDEC-standard write leveling using the DQS strobe and internal delay-locked loop (DLL). During initialization, the memory controller asserts WRLVL MODE, and the DRAM returns a fixed pattern on DQ while adjusting DQS delay until edge alignment with CK is achieved - critical for reliable 1333 MT/s writes.
What ODT configurations are supported by W632GU6NB15J?
W632GU6NB15J supports synchronous ODT (Rtt_NOM), dynamic ODT (Rtt_WR), and asynchronous ODT modes. Rtt_NOM values include 75 Ω, 150 Ω, and 50 Ω; Rtt_WR supports 75 Ω and 150 Ω. Configuration is set via MR1 and MR2, with timing governed by tODT and tDQSS specifications.
Is W632GU6NB15J pin-compatible with other Winbond DDR3L SDRAMs in the same density class?
Yes, W632GU6NB15J shares identical VFBGA-96 pinout and ball assignment with all members of the W632GU6NB family (e.g., W632GU6NB-15, W632GU6NB15I). Differences are limited to speed bin (-15 vs -15J) and temperature grade, enabling direct substitution where thermal requirements align.
W632GU6NB15J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W632GU6NB15J FAQ
1.How can I place an order for W632GU6NB15J through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU6NB15J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU6NB15J reliable?
The price and inventory of W632GU6NB15J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU6NB15J is usually 5 days.
3.What payment methods are accepted for W632GU6NB15J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU6NB15J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU6NB15J?
W632GU6NB15J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU6NB15J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU6NB15J?
For technical support, including W632GU6NB15J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU6NB15J requirements.
6.How does Aetrix verify that W632GU6NB15J is sourced from the original manufacturer or authorized distributors?
All W632GU6NB15J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU6NB15J meets industry standards.
7.What is the process for return or replacement of W632GU6NB15J?
All W632GU6NB15J units undergo pre-shipment inspection (PSI). If there is an issue with W632GU6NB15J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU6NB15J part is unused and in its original packaging.
Return procedure for W632GU6NB15J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU6NB15J Tags
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