Winbond Electronics Corporation W632GU6NB-15 TR

Overview

W632GU6NB-15 TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3L SDRAM operating at DDR3L-1333 speed (9-9-9 CL-nRCD-nRP), with 1.35V nominal supply, VFBGA-96 package (7.5 × 13 mm), and industrial temperature support up to 95°C. It delivers reliable memory buffering for embedded controllers, network interface cards, and industrial HMIs requiring low-voltage, JEDEC-compliant synchronous DRAM.

For engineers reviewing the W632GU6NB-15 TR datasheet, W632GU6NB-15 TR pinout, W632GU6NB-15 TR application, or W632GU6NB-15 TR equivalent, key selection criteria include its DDR3L-1333 timing (tCK = 1.5 ns min), programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET#-all critical for stable high-speed memory subsystems in thermally constrained environments.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, supporting interleaved/nibble-sequential burst ordering, posted CAS with additive latency (AL = 0, CL−1, CL−2), and auto-precharge. Its DLL aligns DQ/DQS edges to CK/CK#, enabling precise source-synchronous data capture at up to 1333 MT/s.

It supports full JEDEC DDR3L features including dynamic ODT (Rtt_WR), partial array self-refresh (PASR), write leveling, multi-purpose register (MPR) for calibration pattern readout, and dual-voltage operation (1.35V DDR3L or 1.5V DDR3 backward compatibility). The -15 speed grade guarantees tRCD/tRP/tAA ≤ 13.5 ns at 667 MHz clock frequency.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness), ball pitch 0.8 mm, RoHS-compliant lead-free construction. Ball map conforms to JEDEC MO-270AC standard for DDR3L SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125:K and IS43TR16128B-15KBL, the W632GU6NB-15 TR uniquely combines native 1.35 V operation, 95°C qualification, ASR/PASR, and write leveling-making it the only option for thermally aggressive, power-sensitive DDR3L designs needing JEDEC-compliant timing closure without layout changes.

Availability

W632GU6NB-15 TR is available at Aetrix Electronics and suitable for industrial HMIs, network interface cards, embedded vision controllers, and medical diagnostic devices requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W632GU6NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and computing markets.

The W632GU6NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature support and advanced power management features.

FAQ

What is the maximum clock frequency supported by the W632GU6NB-15 TR?

The W632GU6NB-15 TR supports a maximum clock frequency of 667 MHz (1333 MT/s data rate), corresponding to the DDR3L-1333 speed bin. Its tCK(AVG) specification is 1.5 ns minimum for CL=9/CWL=7 operation, and it guarantees tRCD/tRP/tAA ≤ 13.5 ns under full JEDEC conditions at this frequency. This rating applies across the full 0°C to 95°C case temperature range.

Does the W632GU6NB-15 TR support both DDR3 and DDR3L voltage levels?

Yes, the W632GU6NB-15 TR supports dual-voltage operation: it is fully compliant with DDR3L specifications at 1.35 V (1.283–1.45 V), and also backward compatible with standard DDR3 at 1.5 V ± 0.075 V. Voltage switching between modes is supported via VDD/VDDQ control, and all AC/DC parameters remain valid under both supply conditions per JEDEC JESD79-3F.

How does the W632GU6NB-15 TR handle refresh at elevated temperatures?

At case temperatures above 85°C, the W632GU6NB-15 TR requires doubled refresh frequency (tREFI = 3.9 µs instead of 7.8 µs). This is implemented either via Auto Self-Refresh (ASR) mode (enabled by setting MR2[A6]=1) or manual entry into self-refresh with extended temperature capability (MR2[A6]=0, MR2[A7]=1). Both methods ensure data retention integrity up to 95°C without external intervention.

What termination options are available on the W632GU6NB-15 TR?

The W632GU6NB-15 TR provides programmable on-die termination (ODT) with three selectable impedances (RTT_NOM = 75 Ω, 150 Ω, 50 Ω; RTT_WR = 75 Ω, 150 Ω) controlled via MR1/MR2. It supports synchronous ODT (for reads), dynamic ODT (Rtt_WR during writes), and asynchronous ODT mode transitions-enabling precise signal integrity tuning for both read and write operations on high-speed memory buses.

Is write leveling supported on the W632GU6NB-15 TR?

Yes, the W632GU6NB-15 TR fully supports JEDEC-standard write leveling. It uses the Multi-Purpose Register (MPR) to output a predefined calibration pattern while the memory controller adjusts DQS delay to align with CK. This procedure is mandatory for timing closure at 1333 MT/s and is implemented in hardware per DDR3L specification section 8.9.