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Winbond Electronics Corporation W632GU8KB-12
- Part No.:
- W632GU8KB-12
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W632GU8KB-12.pdf
- Description:
- IC DRAM 2GBIT 78-WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,558
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Product details
Overview
W632GU8KB-12 from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) speed grade, supporting CAS Latency 6–11 and CWL 5–8, and designed for low-power embedded, networking, and industrial control systems requiring stable high-bandwidth memory with extended temperature operation up to 95°C.
For engineers reviewing the W632GU8KB-12 datasheet, W632GU8KB-12 pinout, W632GU8KB-12 application, or W632GU8KB-12 equivalent, this page delivers verified timing parameters, ball mapping, ODT configuration options, ZQ calibration support, and industrial-grade thermal behavior - all confirmed for the -12 speed grade and 0°C to 95°C case temperature range.
Technical Context
The W632GU8KB-12 implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved burst access. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, and dynamic on-die termination (Rtt_WR) for write signal integrity.
Its differential clock (CK/CK#) and strobe (DQS/DQS#) interfaces are source-synchronous; DLL alignment ensures precise DQ-DQS timing. The device includes asynchronous RESET#, ZQ calibration via external 240 Ω resistor, and multi-purpose register (MPR) for system-level timing calibration using write leveling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - defines usable capacity and row/column/bank addressing space. |
| Data Rate | DDR3L-1600: 1600 MT/s (800 MHz clock), tCK(AVG) = 1.875–2.5 ns - sets maximum sustained bandwidth per pin (1.6 GB/s). |
| CAS Latency (CL) | 6, 7, 8, 9, 10, 11 - determines minimum read access latency in clock cycles; CL=11 required for full DDR3L-1600 timing compliance. |
| CAS Write Latency (CWL) | 5, 6, 7, 8 - configures write-to-strobe delay; CWL=8 pairs with CL=11 for tAA/tRCD/tRP = 11-11-11 timing. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V - enables dual-voltage system integration and legacy DDR3 interoperability. |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C - validated for industrial ambient conditions without derating; supports ASR/PASR for thermal-aware refresh. |
| Power Consumption | IDD0 = 95 mA (active one bank), IDD6 = 19 mA (self-refresh) - quantifies dynamic and standby power for thermal and battery-life budgeting. |
| Package | WBGA-78 (8 mm × 10.5 mm, 0.8 mm pitch) - surface-mount footprint compatible with standard DDR3 layout rules and reflow profiles. |
Pinout & Package
W632GU8KB-12 uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch, RoHS-compliant and lead-free. Ball assignment follows JEDEC-standard DDR3L pinout with dedicated VREFCA/VREFDQ, ZQ, RESET#, and ODT pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Samples all command/address inputs at crossing point; defines timing reference for all operations. |
| CKE | Clock enable | Controls entry/exit from power-down modes; LOW enables Precharge or Active Power Down. |
| RESET# | Asynchronous reset | Initiates power-up sequence or functional reset independent of clock; active-low, internally pulled up. |
| ODT | On-die termination control | Enables/disables programmable termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines. |
| ZQ | ZQ calibration reference | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance calibration. |
| VREFCA | Command/address reference voltage | Supplies mid-supply reference (0.5 × VDD) for address/control input threshold; requires stable decoupling. |
| VREFDQ | Data reference voltage | Supplies mid-supply reference (0.5 × VDDQ) for DQ/DQS/DM input thresholds; separate from VREFCA. |
| DQS / DQS# | Differential data strobe | Source-synchronous strobe for read/write data; center-aligned on write, edge-aligned on read. |
| DM | Data mask | Per-byte write mask signal; active HIGH masks corresponding DQ byte during WRITE bursts. |
| BA0–BA2 | Bank address | Selects one of eight internal banks for ACT/READ/WRITE/REF commands; latched on CK rising edge. |
| A0–A14 | Row/column address | Row address (A0–A14) and column address (A0–A9) share pins; A10/AP controls auto-precharge. |
| CS#, RAS#, CAS#, WE# | Command decode inputs | Define command type (ACT, READ, WRITE, PRE, REF, MRS) per JEDEC DDR3L truth table. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–8, dynamically selectable per frequency bin - enables optimal write timing alignment across DDR3L-1333/1600/1866 speeds. |
| Dynamic On-Die Termination (Rtt_WR) | Configurable termination during WRITE bursts only - improves signal integrity on bidirectional DQ bus without affecting read paths. |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor - corrects output driver and ODT impedance drift over voltage/temperature. |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS - supports system-level timing margin verification and write leveling calibration. |
| Partial Array Self Refresh (PASR) | Refreshes only selected banks (1/2/4/8) - reduces self-refresh current by up to 50% when full array retention is unnecessary. |
| Auto Self Refresh (ASR) | Temperature-triggered refresh rate adjustment - doubles refresh rate above 85°C (tREFI = 3.9 µS) to maintain data retention at 95°C. |
Applications
| Industrial HMI Panels | Network Switch Buffers |
|---|---|
Use Scenario: Touch-enabled operator interface with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A9/A15 SoC, buffering frame buffers, GUI assets, and firmware variables. Use Value: DDR3L-1600 bandwidth sustains 60 Hz 1024×600 display updates while 0–95°C rating ensures reliability in unventilated enclosures. |
Use Scenario: Layer-2/Layer-3 packet buffering in managed Gigabit Ethernet switches with QoS and VLAN processing. IC Role / Device Role / Timing Role: Shared packet buffer memory for ingress/egress queues, supporting bursty traffic with low-latency random access. Use Value: Eight-bank concurrency and programmable AL/CWL minimize head-of-line blocking; PASR cuts idle power during low-traffic periods. |
| Medical Imaging Edge Devices | Automated Test Equipment (ATE) |
Use Scenario: Portable ultrasound or digital X-ray units performing real-time image reconstruction and DICOM export. IC Role / Device Role / Timing Role: High-throughput memory for FPGA-accelerated FFT and filtering pipelines, interfacing via AXI or APB. Use Value: 1.35 V operation reduces thermal load near sensitive analog front-ends; ZQ calibration maintains signal integrity across wide temperature swings. |
Use Scenario: High-speed digital pattern generators and logic analyzers requiring deterministic memory access for waveform capture. IC Role / Device Role / Timing Role: Deep capture buffer for multi-channel parallel sampling at >200 MS/s, synchronized to system clock domain. Use Value: CL=11 and tRCD=11 ns guarantee predictable worst-case access latency; ODT and write leveling ensure clean eye diagrams at 1600 MT/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same density (2 Gb), 96-ball FBGA, DDR3L-1600, CL=11, but requires 1.5 V compatibility mode disabled; no PASR support. | Lacks partial array self-refresh and ASR - less suitable for thermally constrained or battery-backed applications needing ultra-low IDD6. | Choose if board already uses Micron's 96-ball footprint and does not require PASR/ASR features. |
| IS43TR16256B-125KBL | 16-bit bus (x16), 2 Gb, same WBGA-78 package, DDR3L-1600, CL=11, but no TDQS/TDQS# support and fixed CWL=6 only. | Wider data bus reduces controller pin count but increases routing complexity; lacks dynamic ODT and MPR-based calibration. | Choose for x16 interface designs where bandwidth-per-pin efficiency outweighs calibration flexibility. |
Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GU8KB-12 provides unique support for PASR, ASR, dynamic Rtt_WR, and MPR-based write leveling - making it optimal for thermally demanding, power-sensitive, or high-signal-integrity DDR3L implementations where fine-grained power and timing control are critical.
Availability
W632GU8KB-12 is available at Aetrix Electronics and suitable for industrial HMI panels, network switch buffers, medical imaging edge devices, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8KB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile LPDRAM, with global manufacturing and quality certifications.
The W632GU8KB-12 belongs to Winbond's DDR3L SDRAM product line, engineered for industrial, networking, and medical applications demanding low-voltage operation, extended temperature resilience, and JEDEC-compliant signal integrity.
FAQ
What is the maximum supported CAS Latency for W632GU8KB-12 at DDR3L-1600 speed?
The W632GU8KB-12 supports CAS Latency settings of 6, 7, 8, 9, 10, and 11 at DDR3L-1600 speed. CL=11 is required to meet the full JEDEC DDR3L-1600 (11-11-11) timing specification, ensuring tAA, tRCD, and tRP minima of 13.75 ns. Lower CL values may be used with appropriate timing derating and SPD configuration.
Does W632GU8KB-12 support both DDR3L and standard DDR3 1.5 V operation?
Yes, W632GU8KB-12 is backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V), as confirmed in Section 11 of its datasheet. However, it must be configured for 1.5 V mode via mode register settings and VDDQ voltage switching; simultaneous 1.35 V and 1.5 V operation is not supported.
How is ZQ calibration implemented on W632GU8KB-12?
W632GU8KB-12 performs ZQ calibration using an external 240 Ω ±1% resistor connected between the ZQ pin and VSS. Calibration occurs automatically after power-up and can be triggered manually via ZQCL or ZQCS commands. It adjusts both output driver strength and ODT impedance to maintain 34 Ω nominal resistance across voltage and temperature variations.
What is the function of the TDQS/TDQS# pins on W632GU8KB-12?
TDQS and TDQS# on W632GU8KB-12 are true differential data strobes used exclusively in x8 configuration for source-synchronous read/write data transfer. They are edge-aligned with read data and center-aligned with write data, and their timing is DLL-aligned to CK/CK# to ensure tight skew control - critical for reliable 1600 MT/s operation.
Can W632GU8KB-12 operate reliably at 95°C case temperature?
Yes, W632GU8KB-12 is rated for 0°C ≤ TCASE ≤ 95°C. At temperatures above 85°C, Auto Self Refresh (ASR) must be enabled (MR2 A6 = 1b) to double refresh frequency (tREFI = 3.9 µS), ensuring data retention. This capability is validated and specified in the device's AC characteristics table and thermal notes.
W632GU8KB-12 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W632GU8KB-12 FAQ
1.How can I place an order for W632GU8KB-12 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8KB-12 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8KB-12 reliable?
The price and inventory of W632GU8KB-12 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8KB-12 is usually 5 days.
3.What payment methods are accepted for W632GU8KB-12?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8KB-12 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8KB-12?
W632GU8KB-12 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8KB-12 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8KB-12?
For technical support, including W632GU8KB-12 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8KB-12 requirements.
6.How does Aetrix verify that W632GU8KB-12 is sourced from the original manufacturer or authorized distributors?
All W632GU8KB-12 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8KB-12 meets industry standards.
7.What is the process for return or replacement of W632GU8KB-12?
All W632GU8KB-12 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8KB-12, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8KB-12 part is unused and in its original packaging.
Return procedure for W632GU8KB-12:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8KB-12 Tags
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