Winbond Electronics Corporation W632GU8KB12I TR

Overview

W632GU8KB12I TR from Winbond is a 2Gb (256M × 8) industrial-grade DDR3L SDRAM with 8 internal banks, 8-bit prefetch architecture, and support for DDR3L-1600 (11-11-11) operation at 800 MHz clock frequency. It operates at 1.35 V nominal supply (VDD/VDDQ = 1.283–1.45 V), features programmable CAS Latency (CL = 6, 7, 8, 9, 10, 11), and delivers burst read/write throughput up to 1600 Mb/sec/pin in systems requiring low-voltage memory for embedded control and industrial computing.

For engineers reviewing the W632GU8KB12I TR datasheet, W632GU8KB12I TR pinout, W632GU8KB12I TR application, or W632GU8KB12I TR equivalent, this device serves as a drop-in industrial-temp DDR3L replacement with verified ZQ calibration, dynamic ODT, write leveling, and MPR-based timing calibration - critical for stable high-speed memory interfaces in temperature-varying environments.

Technical Context

The W632GU8KB12I TR implements a source-synchronous DDR interface with differential CK/CK# and DQS/DQS# signaling, where all commands are latched on the CK rising / CK# falling crossing point and data is double-data-rate aligned to DQS edges. Its DLL aligns DQ and DQS transitions to CK, enabling precise timing at 800 MHz.

It supports full JEDEC DDR3L-1600 compliance including programmable CWL (5–8), additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and multi-mode refresh (ASR, PASR, self-refresh). The -12I speed grade guarantees operation from −40°C to +95°C with tREFI = 7.8 µs (0–85°C) or 3.9 µs (85–95°C) under extended-temperature ASR mode.

Key Specifications

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-78 (8 mm × 10.5 mm, 0.8 mm pitch) with 78-ball array.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GU8KB12I TR uniquely combines industrial −40°C to +95°C operation, integrated write leveling, MPR-based margin validation, and ZQ-calibrated dynamic ODT - making it optimal for ruggedized embedded designs where link reliability must be maintained across thermal and mechanical stress.

Availability

W632GU8KB12I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, railway onboard control units, medical imaging gateways, and network edge routers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU8KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and low-power DRAM products for industrial, automotive, and communications markets.

The W632GU8KB12I TR belongs to Winbond's DDR3L SDRAM product line, engineered specifically for industrial and embedded applications demanding extended temperature operation, robust signal integrity, and JEDEC-compliant timing calibration features.

FAQ

What is the guaranteed operating temperature range for W632GU8KB12I TR?

The W632GU8KB12I TR is rated for −40°C ≤ TCASE ≤ 95°C. At temperatures above 85°C, operation requires either Auto Self-Refresh (ASR) enabled via MR2[7:6] = 10b or manual self-refresh mode to maintain tREFI = 3.9 µs, ensuring reliable data retention without external thermal management.

Does W632GU8KB12I TR support write leveling, and how is it implemented?

Yes, W632GU8KB12I TR supports write leveling per JEDEC DDR3L specification. It uses the Multi-Purpose Register (MPR) to output a predefined pattern while the controller adjusts DQS delay; the DRAM returns feedback via DQ pins to determine optimal DQS-to-CK phase alignment per byte lane.

What ZQ calibration resistor value is required for W632GU8KB12I TR?

W632GU8KB12I TR requires a 240 Ω ±1% resistor connected between the ZQ pin and VSS. This resistor serves as the reference for both output driver impedance tuning and on-die termination (ODT) calibration, ensuring consistent signal integrity across voltage and temperature variations.

Can W632GU8KB12I TR operate at 1.5 V, and what are the implications?

Yes, W632GU8KB12I TR is backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V). However, doing so forfeits DDR3L-specific power savings and may require reconfiguration of MR1/MR2 settings; JEDEC AC timing parameters remain valid only at the rated 1.35 V nominal supply.

How does dynamic ODT (Rtt_WR) function in W632GU8KB12I TR?

In W632GU8KB12I TR, dynamic ODT activates termination resistors (Rtt_WR) only during WRITE operations, as controlled by MR2[8]. This reduces noise on the data bus during READ cycles while maintaining clean write waveforms - especially beneficial in multi-drop or long-trace DDR3L layouts.