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Winbond Electronics Corporation W632GU8KB-12 TR
- Part No.:
- W632GU8KB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W632GU8KB-12 TR.pdf
- Description:
- IC DRAM 2GBIT 78-WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,614
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Product details
Overview
W632GU8KB-12 TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in 78-ball WBGA package, operating at 1.35V nominal supply with DDR3L-1600 (11-11-11) timing, supporting CAS Latency 6–11 and programmable CWL 5–8. It delivers 1600 Mb/s/pin data rates for memory subsystems in industrial embedded controllers and networking edge devices.
For engineers reviewing the W632GU8KB-12 TR datasheet, W632GU8KB-12 TR pinout, W632GU8KB-12 TR application, or W632GU8KB-12 TR equivalent, key selection criteria include its 1.35V low-voltage operation, industrial temperature support (0°C to 95°C), ZQ calibration, dynamic ODT, and compatibility with DDR3L-1600 system timing requirements.
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# and DQS/DQS# interfaces, and DLL-based clock-data alignment. It supports posted CAS, additive latency (AL = 0, CL−1, CL−2), and auto-precharge for burst reads/writes.
Functional features include asynchronous RESET#, multi-purpose register (MPR) for timing calibration, write leveling for signal integrity, and dual-mode ODT (synchronous and dynamic) with RTT_NOM, RTT_WR, and RTT_PARK settings. It complies fully with JEDEC DDR3L standards and supports backward operation at 1.5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits), organized as 256M words × 8 |
| Data Rate | 1600 Mb/s/pin (DDR3L-1600), tCK = 1.25 ns min (CL=11/CWL=8) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward compatible to 1.5 V ± 75 mV |
| CAS Latency | Programmable CL = 6, 7, 8, 9, 10, 11 - enables tuning of read latency vs. timing margin |
| CAS Write Latency | Programmable CWL = 5, 6, 7, 8 - matches frequency bin and ensures write setup compliance |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs at 85°C–95°C with ASR or Manual Self-Refresh mode |
| Package | 78-ball WBGA, 8 mm × 10.5 mm, RoHS-compliant, lead-free |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C (commercial/industrial grade per -12 suffix) |
Pinout & Package
W632GU8KB-12 TR uses a 78-ball WBGA (8 mm × 10.5 mm) package with ball pitch of 0.8 mm. Pinout follows JEDEC-standard DDR3L layout with dedicated VDDQ, VSSQ, VREFCA, VREFDQ, ZQ, and ODT balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Samples all command/address inputs at crossing point; defines system timing reference |
| DQS / DQS# | Differential strobe (bidirectional) | Source-synchronous capture of read data (edge-aligned) and write data (center-aligned) |
| RESET# | Asynchronous active-low reset | Triggers power-up initialization sequence and resets internal state machines |
| ZQ | Calibration reference terminal | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance tuning |
| ODT | On-die termination control | Enables/disables synchronous or dynamic ODT on DQ/DQS/DM lines per MR1/MR2 configuration |
| VREFCA / VREFDQ | Reference voltage inputs | VREFCA sets command/address threshold; VREFDQ sets data I/O threshold (0.5 × VDDQ) |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Enables on-the-fly termination switching during writes to suppress reflections without affecting read paths |
| Write Leveling | Allows controller to calibrate DQS-to-CK skew per byte lane, critical for reliable high-speed write capture |
| Multi-Purpose Register (MPR) | Provides predefined read pattern for system-level timing margin validation and MPR-based calibration |
| ZQ Calibration | Performs periodic 240 Ω reference-based trimming of output drivers and ODT impedances across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, extending battery life in portable systems |
| Programmable Additive Latency (AL) | Supports AL = 0, CL−1, CL−2 to optimize command bus efficiency and reduce command collision in burst-heavy workloads |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with local data buffering and firmware update storage. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M4-based controllers running real-time OS. Use Value: DDR3L-1600 bandwidth meets 100+ MB/s DMA throughput needs while 1.35V operation reduces thermal load in sealed enclosures. |
Use Scenario: Packet buffering and forwarding table caching in Layer 3 switches with 1–10 Gbps line-rate processing. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer memory interfaced to multi-core network processors. Use Value: 8-bank concurrency and programmable CL/CWL enable predictable latency under variable traffic loads and bursty ingress patterns. |
| Medical Imaging Gateways | Smart Video Surveillance NVRs |
Use Scenario: DICOM image preprocessing pipeline requiring temporary frame storage before compression and transmission. IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-accelerated image scaling, noise reduction, and ROI extraction. Use Value: Dynamic ODT and write leveling ensure signal integrity across long PCB traces between FPGA and memory, minimizing bit errors at 1600 MT/s. |
Use Scenario: Concurrent recording of 8–16 HD video streams with motion-triggered event buffering and AI inference pre-processing. IC Role / Device Role / Timing Role: Shared system memory for SoC-based NVR platforms handling simultaneous encode/decode and analytics. Use Value: PASR and low IDD6 (19 mA) extend uptime in fanless, thermally constrained enclosures during extended idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same density (2Gb × 8), 78-ball FBGA, DDR3L-1600, but requires 1.5V-compatible VDDQ rail; no PASR support | Targeted at server/desktop-derived designs where 1.5V legacy compatibility is mandatory and thermal headroom is higher | Select when board already supports 1.5V VDDQ and PASR is not required; verify RESET# timing and ZQ calibration sequence differences |
| IS43TR16256B-125KBL | 16-bit wide (x16), 2Gb density, same 78-ball WBGA, DDR3L-1600, supports CL=11 but lacks write leveling and MPR | Used in cost-sensitive consumer electronics where x16 interface simplifies routing and calibration complexity is avoided | Choose only if x16 data bus matches SoC interface and system does not require write leveling or MPR-based margin testing |
Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GU8KB-12 TR offers unique integration of PASR, write leveling, and MPR-enabling lower power, higher signal integrity, and production testability in thermally constrained industrial systems without requiring 1.5V infrastructure.
Availability
W632GU8KB-12 TR is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging gateways, and smart video surveillance NVRs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for W632GU8KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU8KB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding extended temperature operation, low-voltage efficiency, and robust signal integrity features like write leveling and dynamic ODT.
FAQ
What is the maximum operating frequency supported by W632GU8KB-12 TR?
W632GU8KB-12 TR supports DDR3L-1600 operation with a maximum clock frequency of 800 MHz (1600 MT/s), corresponding to a minimum tCK of 1.25 ns. This is validated for CL=11 and CWL=8 under 0°C to 95°C case temperature and 1.283–1.45 V supply conditions per JEDEC specification.
Does W632GU8KB-12 TR support both 1.35V and 1.5V operation?
Yes, W632GU8KB-12 TR is backward compatible with 1.5V DDR3 systems. It operates at 1.35V nominal (1.283–1.45 V range) for DDR3L mode and supports 1.5V ± 75 mV for legacy DDR3 compatibility, with identical timing specifications and no hardware changes required.
How does the ZQ calibration function work on W632GU8KB-12 TR?
W632GU8KB-12 TR performs ZQ calibration by referencing an external 240 Ω ±1% resistor connected to the ZQ pin. During calibration, internal current sources adjust output driver strength and ODT impedance to match the reference, ensuring consistent signal integrity across voltage and temperature variations.
What is the purpose of the MPR (Multi-Purpose Register) in W632GU8KB-12 TR?
The MPR in W632GU8KB-12 TR provides a predefined read-only bit pattern used for system-level timing margin validation and calibration. When enabled via MR3, it outputs a fixed sequence on DQ pins, allowing controllers to measure setup/hold margins and verify signal integrity without accessing actual memory contents.
Can W632GU8KB-12 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU8KB-12 TR supports PASR via MR2 configuration (A6/A5/A4 bits), enabling refresh of only selected banks. This reduces self-refresh current from 19 mA to as low as ~10 mA depending on bank count, extending battery life in portable and fanless industrial systems.
W632GU8KB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W632GU8KB-12 TR FAQ
1.How can I place an order for W632GU8KB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8KB-12 TR reliable?
The price and inventory of W632GU8KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8KB-12 TR is usually 5 days.
3.What payment methods are accepted for W632GU8KB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8KB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8KB-12 TR?
W632GU8KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8KB-12 TR?
For technical support, including W632GU8KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8KB-12 TR requirements.
6.How does Aetrix verify that W632GU8KB-12 TR is sourced from the original manufacturer or authorized distributors?
All W632GU8KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8KB-12 TR meets industry standards.
7.What is the process for return or replacement of W632GU8KB-12 TR?
All W632GU8KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8KB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8KB-12 TR part is unused and in its original packaging.
Return procedure for W632GU8KB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8KB-12 TR Tags
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M24C02-WMN6TP
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