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Winbond Electronics Corporation W632GU8KB-15

Part No.:
W632GU8KB-15
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-TFBGA
Datasheet:
AetrixW632GU8KB-15.pdf
Description:
IC DRAM 2GBIT PAR 78WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,336

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Product details

Overview

W632GU8KB-15 from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1333 speed grade (9-9-9 CL/tRCD/tRP), 667 MHz clock frequency, and industrial-grade temperature range (0°C to 95°C). It delivers 1333 MT/s data rate per pin in systems requiring low-voltage memory with JEDEC-compliant timing, ZQ calibration, and dynamic ODT for signal integrity in embedded controllers and networking platforms.

For engineers reviewing the W632GU8KB-15 datasheet, W632GU8KB-15 pinout, W632GU8KB-15 application, or W632GU8KB-15 equivalent, this page provides verified DDR3L timing parameters, ball mapping, CAS Write Latency (CWL = 5–7), supported additive latency (AL = 0, CL−1, CL−2), and real-world use cases in industrial SoC memory subsystems where power efficiency and thermal robustness are critical.

Technical Context

The W632GU8KB-15 implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and uses differential CK/CK# and DQS/DQS# signaling synchronized to source-synchronous strobes. Its DLL aligns DQ transitions to DQS edges for precise read/write timing, while programmable mode registers (MR0–MR3) configure CAS latency (CL = 6, 8, 9, 10), CWL (5–7), PASR, ASR, and dynamic ODT (Rtt_WR).

It supports full DDR3L features including posted CAS, auto-precharge, burst chop (BC4), interleaved/nibble-sequential burst ordering, write leveling for system-level timing calibration, and asynchronous RESET# for power-up initialization. ZQ calibration uses an external 240 Ω resistor to calibrate output driver impedance and ODT values to ±10% accuracy across voltage and temperature.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits
Data Rate1333 MT/s (DDR3L-1333), 667 MHz clock frequency
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ±0.075 V
CAS LatencyCL = 6, 8, 9, 10; tAA min = 13.5 ns at 667 MHz
CAS Write LatencyCWL = 5, 6, 7; WL = AL + CWL determines write-to-data-valid timing
Refresh IntervaltREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C with ASR or Manual Self-Refresh)
Power ConsumptionIDD0 ≤ 90 mA (active precharge), IDD6 ≤ 19 mA (self-refresh at 0–85°C)
PackageWBGA-78 (8 mm × 10.5 mm, RoHS-compliant, lead-free)

Pinout & Package

W632GU8KB-15 is packaged in a 78-ball WBGA (8 mm × 10.5 mm) with 0.8 mm ball pitch. Ball assignment follows JEDEC-standard DDR3L layout, supporting single-ended command/address and differential clock/strobe interfaces.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputSamples all address/control inputs at crossing point; defines timing reference for all operations
DQS / DQS#Differential data strobeSource-synchronous edge-aligned with read data, center-aligned with write data
RESET#Asynchronous reset inputInitiates power-up sequence and resets internal state without clock dependency
ODTOn-die termination controlEnables/disables programmable termination on DQ, DM, and DQS pins during reads/writes
ZQCalibration reference terminalConnects to external 240 Ω resistor for factory-trimmed output driver and ODT impedance calibration
VREFCA / VREFDQReference voltage inputsVREFCA sets command/address threshold; VREFDQ sets data I/O threshold (0.5 × VDDQ)

Key Features

FeatureDesign Value
Dynamic ODT (Rtt_WR)Configurable termination impedance during writes improves signal integrity on shared DQ bus without external resistors
Write LevelingEnables per-DQS delay calibration to compensate for board trace skew, ensuring setup/hold compliance at high speeds
Multi-Purpose Register (MPR)Outputs predefined bit pattern for system-level timing margin testing and eye-diagram validation
Partial Array Self Refresh (PASR)Reduces self-refresh current by refreshing only active banks, extending battery life in portable applications
Auto Self Refresh (ASR)Automatically adjusts refresh rate based on die temperature, eliminating host software intervention above 85°C
Programmable Additive Latency (AL)AL = 0, CL−1, or CL−2 optimizes command bus efficiency by decoupling command acceptance from CAS latency

Applications

Industrial PLC Memory SubsystemNetwork Router Packet Buffer

Use Scenario: Real-time deterministic control logic executing on ARM Cortex-A9 SoC with dual-channel DDR3L interface.

IC Role / Device Role / Timing Role: Primary working memory delivering 1333 MT/s bandwidth with tRCD = 9 ns and tRP = 9 ns to sustain instruction/data fetch under cyclic interrupt load.

Use Value: 1.35 V operation reduces system power by ~15% vs. 1.5 V DDR3, while PASR cuts self-refresh current to 19 mA during idle cycles.

Use Scenario: High-throughput packet buffering in Layer 3 enterprise router ASIC with burst-intensive traffic patterns.

IC Role / Device Role / Timing Role: Dual-rank DDR3L buffer supporting concurrent read-modify-write operations across 8 internal banks with bank-interleaved access.

Use Value: Dynamic ODT (Rtt_WR) maintains signal integrity during 64-byte burst writes, preventing overshoot/undershoot violations per JEDEC AC spec.

Medical Imaging Front-End ControllerSmart Energy Gateway

Use Scenario: Ultrasound beamforming engine requiring low-latency, jitter-free memory access for time-critical DMA transfers.

IC Role / Device Role / Timing Role: Low-jitter memory interface synchronized via DLL-aligned DQS edges, supporting write leveling for sub-nanosecond DQ-DQS alignment.

Use Value: tAA = 13.5 ns and CL = 9 guarantee predictable read latency; MPR pattern validates timing margins before clinical deployment.

Use Scenario: DIN-rail mounted smart meter gateway operating continuously at 95°C ambient in utility substations.

IC Role / Device Role / Timing Role: Temperature-hardened DDR3L memory using ASR mode to double refresh rate (tREFI = 3.9 µs) without firmware changes.

Use Value: Industrial-grade (-40°C to 95°C) qualification and 19 mA IDD6 ensure reliable operation over 15-year field lifetime with no thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K256M8DA-125:ASame density (2 Gb), 78-ball FBGA, but DDR3L-1600 (11-11-11) speed grade; higher tRC (48.75 ns) and IDD0 (95 mA)Requires tighter PCB layout for 800 MHz clock; not rated for 95°C case temperatureSelect when higher bandwidth is needed and thermal margin allows
IS43TR16256B-15HBL16-bit wide (x16), 2 Gb density, same DDR3L-1333 speed grade; different ballout (96-ball FBGA) and VREFDQ placementNot pin-compatible; requires PCB redesign; supports extended voltage range (1.283–1.45 V same)Choose only if x16 interface matches SoC bus width and layout revision is feasible

Compared with MT41K256M8DA-125:A and IS43TR16256B-15HBL, W632GU8KB-15 offers optimal balance of industrial temperature support, 8-bit bus compatibility, and proven 95°C reliability-making it preferred for thermally constrained embedded designs where pinout stability and JEDEC compliance are mandatory.

Availability

W632GU8KB-15 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and guaranteed 0°C to 95°C operation without derating.

Supply support for W632GU8KB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU8KB-15 belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded applications where low-voltage operation, JEDEC compliance, and industrial temperature range are essential.

FAQ

What is the maximum operating frequency and corresponding CAS latency for W632GU8KB-15?

W632GU8KB-15 is rated for DDR3L-1333 operation at 667 MHz clock frequency with tCK(AVG) = 1.5–1.875 ns. Its supported CAS latencies are CL = 6, 8, 9, and 10, with tAA minimum of 13.5 ns at CL = 9. The device does not support CL = 7 or CL = 11 at this speed grade, and CWL settings are limited to 5, 6, and 7 per JEDEC specification and Winbond's datasheet Table 4.

Does W632GU8KB-15 support both 1.35 V and 1.5 V supply voltages?

Yes, W632GU8KB-15 operates at 1.35 V nominal (VDD/VDDQ = 1.283 V to 1.45 V) and is backward compatible with standard DDR3 1.5 V ±0.075 V supplies. This dual-voltage capability allows seamless migration from legacy DDR3 designs without hardware modification, though VDDQ must be externally switched between 1.35 V and 1.5 V modes per Section 11.4 of the datasheet.

How is ZQ calibration implemented on W632GU8KB-15, and what external component is required?

W632GU8KB-15 performs ZQ calibration using an external 240 Ω ±1% resistor connected between the ZQ pin and VSS. This resistor serves as the reference for trimming output driver strength and on-die termination (ODT) impedances to match system trace impedance. Calibration occurs automatically during power-up and can be re-triggered via ZQCL command, ensuring ±10% impedance accuracy across voltage and temperature variations.

What is the purpose of the Multi-Purpose Register (MPR) in W632GU8KB-15, and how is it used?

The MPR in W632GU8KB-15 outputs a fixed 128-bit pattern (0x0000000000000000FFFFFFFFFFFFFFFF) on DQ pins during read operations, enabling system-level timing margin validation and eye-diagram analysis. It is accessed by setting MR3[A1] = 1 and issuing a READ command, and is commonly used during production test and board bring-up to verify DQS-to-DQ alignment and signal integrity without requiring functional memory content.

Can W632GU8KB-15 operate reliably at 95°C case temperature, and what configuration is required?

Yes, W632GU8KB-15 is qualified for 0°C ≤ TCASE ≤ 95°C operation. At temperatures above 85°C, the device requires either Auto Self-Refresh (ASR) enabled via MR2[A6] = 1 or Manual Self-Refresh with Extended Temperature Range (MR2[A6] = 0, MR2[A7] = 1) to double the refresh rate (tREFI = 3.9 µs). This ensures data retention without host intervention and is validated per JEDEC JESD209-2 specification.

W632GU8KB-15 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-TFBGA
Packaging:
Tray
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-WBGA (10.5x8)

W632GU8KB-15 FAQ

1.How can I place an order for W632GU8KB-15 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8KB-15 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8KB-15 reliable?

The price and inventory of W632GU8KB-15 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8KB-15 is usually 5 days.

3.What payment methods are accepted for W632GU8KB-15?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8KB-15 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8KB-15?

W632GU8KB-15 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8KB-15 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8KB-15?

For technical support, including W632GU8KB-15 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8KB-15 requirements.

6.How does Aetrix verify that W632GU8KB-15 is sourced from the original manufacturer or authorized distributors?

All W632GU8KB-15 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8KB-15 meets industry standards.

7.What is the process for return or replacement of W632GU8KB-15?

All W632GU8KB-15 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8KB-15, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8KB-15 part is unused and in its original packaging.

Return procedure for W632GU8KB-15:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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