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Winbond Electronics Corporation W632GU8KB15I
- Part No.:
- W632GU8KB15I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W632GU8KB15I.pdf
- Description:
- IC DRAM 2GBIT PAR 78WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,075
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Product details
Overview
W632GU8KB15I from Winbond Electronics is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature range support (–40°C to +95°C), compliant with DDR3L-1333 (9-9-9) timing, and packaged in 78-ball WBGA (8 mm × 10.5 mm). It serves as main memory or buffer storage in embedded controllers, network processors, and industrial HMIs requiring low-voltage, high-reliability DRAM.
For engineers reviewing the W632GU8KB15I datasheet, W632GU8KB15I pinout, W632GU8KB15I application, or W632GU8KB15I equivalent, this page delivers verified electrical specs, ball mapping, JEDEC-compliant timing parameters, industrial-grade thermal validation, and direct alternatives for DDR3L-1333 memory replacement in space-constrained designs.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous data transfer using differential CK/CK# and DQS/DQS# pairs. It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10), CAS Write Latency (CWL = 5–7), and additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency.
Key operational features include asynchronous RESET#, ZQ calibration for output driver and ODT impedance tuning, dynamic and synchronous on-die termination (Rtt_WR, Rtt_NOM), multi-purpose register (MPR) for system-level timing calibration, and partial array self-refresh (PASR) for power-sensitive applications. The device supports both auto-precharge and manual precharge modes across all burst operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - defines usable capacity and address space for memory controllers. |
| Speed Grade | DDR3L-1333 (9-9-9) - guarantees tRCD/tRP/tAA ≤ 13.5 ns at 667 MHz clock (1333 MT/s), validated for industrial temp range. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical) - enables lower power vs. standard DDR3 while maintaining backward compatibility to 1.5 V systems. |
| Operating Temperature | –40°C ≤ TCASE ≤ 95°C - qualified for extended industrial environments with mandatory ASR or Manual Self-Refresh above 85°C. |
| Burst Length | BL8 (fixed) and BC4 (on-the-fly selectable) - determines data transfer granularity per READ/WRITE command, critical for bandwidth matching. |
| CAS Latency Range | CL = 6, 7, 8, 9, 10 - configurable via mode register MR0; CL=9 required for DDR3L-1333 compliance at full speed. |
| Self-Refresh Current | IDD6 ≤ 19 mA at 0°C–85°C - quantifies standby power draw during retention mode, essential for battery-backed or low-power idle states. |
| Package | 78-ball WBGA, 8 mm × 10.5 mm, RoHS-compliant, lead-free - surface-mount footprint optimized for high-density PCB layouts with thermal pad grounding. |
Pinout & Package
W632GU8KB15I uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with exposed thermal pad (VSS) on underside. Ball pitch is 0.8 mm; balls are arranged in 9 rows × 9 columns with corner voids (A1, A9, J1, J9 unpopulated).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Samples all address/control inputs at crossing point; defines timing reference for all internal operations and data strobes. |
| DQS / DQS# | Differential data strobe (bidirectional) | Source-synchronous timing reference: center-aligned with write data, edge-aligned with read data; enables precise capture at controller. |
| RESET# | Asynchronous reset input | Initiates power-up sequence or hard reset; must be held low ≥ 200 ns before stable VDD/VDDQ and ≥ 500 µs after stabilization. |
| ODT | On-die termination control | Enables/disables programmable termination resistors (Rtt_NOM/Rtt_WR) on DQ/DQS/DM lines to suppress reflections on high-speed buses. |
| ZQ | Calibration reference terminal | Connects to 240 Ω ±1 % external resistor to ground; used for factory and runtime calibration of output drivers and ODT impedances. |
| VREFCA / VREFDQ | Reference voltage inputs | VREFCA sets mid-point threshold for command/address inputs; VREFDQ sets threshold for DQ/DM/DQS I/Os - both require 0.5 × VDDQ ±1%. |
| A10/AP | Address/Activate Power-down | When asserted during PRECHARGE, selects auto-precharge; when asserted during ACTIVATE, enables partial array self-refresh (PASR). |
Key Features
| Feature | Design Value |
|---|---|
| DDR3L Low-Voltage Operation | 1.35 V nominal supply reduces active and standby power by ~20% vs. 1.5 V DDR3, validated across full industrial temperature range. |
| Dynamic On-Die Termination (Rtt_WR) | Programmable termination during WRITE bursts only - improves signal integrity without impacting READ timing margins or power. |
| Write Leveling Support | Enables controller-driven DQS-to-CK skew calibration at system boot - essential for reliable timing closure in high-speed DDR3L interfaces. |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS reads - used for system-level timing margin testing and eye-diagram characterization. |
| Auto Self-Refresh (ASR) & PASR | ASR automatically adjusts refresh rate based on temperature; PASR allows selective bank refresh - both reduce IDD6 current in thermally constrained systems. |
| Backward 1.5 V Compatibility | Operates fully compliant at 1.5 V ±0.075 V - enables drop-in replacement in legacy DDR3 designs without hardware modification. |
Applications
| Industrial HMI Memory Buffer | Network Processor Main Memory |
|---|---|
Use Scenario: Touch-enabled human-machine interface in factory automation panels requiring persistent display buffering and real-time response. IC Role / Device Role / Timing Role: Acts as frame buffer and application code/data RAM; operates at DDR3L-1333 speed with CL=9 to meet 60 Hz UI update deadlines. Use Value: Industrial temperature rating (–40°C to +95°C) ensures reliability in uncontrolled cabinet environments; low IDD6 current extends uptime during brownouts. |
Use Scenario: Packet buffering and forwarding table storage in Layer 3 switches handling 1 Gbps+ traffic with deterministic latency. IC Role / Device Role / Timing Role: Provides shared packet memory for ASIC/FPGA-based forwarding engines; uses BL8 bursts and auto-precharge to sustain >800 MB/s throughput. Use Value: Dynamic ODT (Rtt_WR) minimizes write-data jitter under heavy load; ZQ calibration maintains signal integrity across voltage/temperature drift. |
| Medical Imaging Data Cache | Edge AI Inference Accelerator |
Use Scenario: Temporary storage for DICOM image tiles during real-time ultrasound reconstruction on portable diagnostic devices. IC Role / Device Role / Timing Role: Serves as low-latency scratchpad memory for FPGA-based image pipelines; leverages PASR to reduce power during idle scan intervals. Use Value: 1.35 V operation cuts thermal load near sensitive analog front-end circuitry; MPR readout validates timing margins during production test. |
Use Scenario: Weight and activation buffer for vision inference accelerators running CNN models on battery-powered edge cameras. IC Role / Device Role / Timing Role: Supplies high-bandwidth memory for tensor matrix operations; uses write leveling and CL=7/8 binning to tighten setup/hold windows. Use Value: Backward 1.5 V compatibility allows reuse of existing DDR3 PCB layouts; 78-ball WBGA enables compact module integration with thermal pad grounding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8RH-125:E (Micron) | DDR3L-1600 (11-11-11), 2 Gb, 96-ball FBGA - higher speed grade, larger package, tighter tRCD/tRP (11 ns). | Requires PCB redesign due to different ball count/pitch; suitable where bandwidth >12.8 GB/s is needed. | Select if system clock supports ≥800 MHz and layout allows 96-ball footprint; not drop-in compatible. |
| IS43TR16256B-125KBL (ISSI) | DDR3L-1600 (11-11-11), 2 Gb, 96-ball FBGA - same speed bin as Micron part, identical package but different ball map. | Also requires board revision; offers extended voltage range (1.283–1.45 V) and same industrial temp support. | Prefer for second-source assurance in new designs targeting DDR3L-1600; verify ball-out against controller routing. |
Compared with W632GU8KB15I, both alternatives operate at DDR3L-1600 speed and require 96-ball packages, making them unsuitable for direct replacement without PCB changes; W632GU8KB15I remains optimal for cost-sensitive, space-constrained industrial designs needing DDR3L-1333 performance and 78-ball WBGA compatibility.
Availability
W632GU8KB15I is available at Aetrix Electronics and suitable for industrial HMIs, network processors, medical imaging systems, and edge AI accelerators requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature qualification.
Supply support for W632GU8KB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W632GU8KB15I belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant interoperability with mainstream memory controllers.
FAQ
What is the maximum supported CAS Latency for W632GU8KB15I at DDR3L-1333 speed?
W632GU8KB15I supports CAS Latency settings of 6, 7, 8, 9, and 10 at DDR3L-1333 speed. CL=9 is the default and JEDEC-compliant setting for the -15/15I speed grade, delivering tRCD/tRP/tAA ≤ 13.5 ns. CL=10 is permitted but requires corresponding SPD programming and timing margin verification in the host controller.
Does W632GU8KB15I support 1.5 V operation, and what conditions apply?
Yes, W632GU8KB15I is backward compatible with 1.5 V ±0.075 V DDR3 operation per JEDEC JESD79-3F. It retains full AC/DC specifications at 1.5 V, including timing, drive strength, and ODT behavior. No configuration change is needed - the device auto-adapts based on applied VDD/VDDQ voltage.
How is thermal management handled for W632GU8KB15I above 85°C case temperature?
For operation between 85°C and 95°C case temperature, W632GU8KB15I requires either Auto Self-Refresh (ASR) enabled via MR2 bit A6=1, or Manual Self-Refresh with Extended Temperature Range (MR2 A6=0, A7=1). Both modes double refresh frequency to 3.9 µS interval (tREFI), ensuring data retention without external intervention.
What is the function of the ZQ pin on W632GU8KB15I, and what external component is required?
The ZQ pin on W632GU8KB15I connects to a 240 Ω ±1 % precision resistor to ground, enabling factory and runtime calibration of output driver strength and on-die termination (ODT) impedances. This calibration ensures consistent signal integrity across voltage, temperature, and process variations - critical for reliable DDR3L-1333 operation.
Can W632GU8KB15I be used in systems requiring Partial Array Self-Refresh (PASR)?
Yes, W632GU8KB15I supports Partial Array Self-Refresh via A10/AP pin assertion during PRECHARGE commands. PASR allows selective refresh of active banks only, reducing self-refresh current (IDD6) by up to 40% compared to full-array refresh - beneficial in thermally constrained or battery-operated systems.
W632GU8KB15I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W632GU8KB15I FAQ
1.How can I place an order for W632GU8KB15I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8KB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8KB15I reliable?
The price and inventory of W632GU8KB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8KB15I is usually 5 days.
3.What payment methods are accepted for W632GU8KB15I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8KB15I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8KB15I?
W632GU8KB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8KB15I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8KB15I?
For technical support, including W632GU8KB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8KB15I requirements.
6.How does Aetrix verify that W632GU8KB15I is sourced from the original manufacturer or authorized distributors?
All W632GU8KB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8KB15I meets industry standards.
7.What is the process for return or replacement of W632GU8KB15I?
All W632GU8KB15I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8KB15I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8KB15I part is unused and in its original packaging.
Return procedure for W632GU8KB15I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8KB15I Tags
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