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Winbond Electronics Corporation W632GU8KB15I TR

Part No.:
W632GU8KB15I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-TFBGA
Datasheet:
AetrixW632GU8KB15I TR.pdf
Description:
IC DRAM 2GBIT PAR 78WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,461

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Product details

Overview

W632GU8KB15I TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in 78-ball WBGA package, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1333 speed grade (9-9-9 CL/tRCD/tRP), 8 internal banks, and 8-bit prefetch architecture for high-bandwidth memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W632GU8KB15I TR datasheet, W632GU8KB15I TR pinout, W632GU8KB15I TR application, or W632GU8KB15I TR equivalent, this page delivers verified timing parameters, ball-level I/O mapping, ODT configuration options, ZQ calibration support, and industrial-grade power-down modes required for stable DDR3L interface design and JEDEC-compliant layout validation.

Technical Context

The W632GU8KB15I TR implements a source-synchronous DDR interface with differential CK/CK# and DQS/DQS# signaling, DLL-aligned data strobes, and programmable additive latency (AL = 0, CL–1, CL–2) to decouple command bus efficiency from CAS latency. It supports posted CAS, auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Its memory organization comprises 8 banks × 32M words × 8 bits, enabling concurrent bank activation. Key control features include asynchronous RESET#, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, and write leveling for DQ-DQS skew compensation - all compliant with JEDEC DDR3L standard JESD79-3F.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density2 Gb (256M × 8), 32M words per bank × 8 banks × 8 bits
Speed GradeDDR3L-1333 (9-9-9 CL/tRCD/tRP), fCKMAX = 667 MHz
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward-compatible to 1.5 V ± 75 mV
Operating TemperatureIndustrial grade: –40°C ≤ TCASE ≤ 95°C with ASR/PASR support
Burst LengthFixed BL8 or BC4 via mode register; on-the-fly switching supported
CAS Latency (CL)Programmable CL = 6, 7, 8, 9, 10 (JEDEC-supported values for -15I)
CAS Write Latency (CWL)Programmable CWL = 5, 6, 7; WL = AL + CWL determines write-to-strobe timing
Self-Refresh CurrentIDD6 ≤ 19 mA at 0°C to 85°C; extends to 95°C using ASR or Manual Self-Refresh

Pinout & Package

Packaged in lead-free, RoHS-compliant 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch), with VDDQ/VSSQ separation for signal integrity and dedicated ZQ pin for output driver/ODT calibration.

Pin/Terminal Circuit Role Design Meaning
CK / CK#Differential clock inputLatches all address/control on rising CK/falling CK# crossing; defines system timing reference
DQS / DQS#Differential data strobeSource-synchronous read/write strobe; edge-aligned on reads, center-aligned on writes
RESET#Asynchronous reset inputInitiates power-up sequence or hard reset; independent of clock or CKE state
ODTOn-die termination controlEnables/disables programmable RTT values (60 Ω, 120 Ω, 40 Ω) on DQ/DM/DQS pins during reads/writes
ZQCalibration reference terminalConnects to external 240 Ω ±1% resistor to ground for factory-trimmed output driver and ODT impedance tuning
VREFCA / VREFDQReference voltage inputsVREFCA sets command/address threshold; VREFDQ sets data I/O threshold (0.5 × VDDQ)

Key Features

Feature Design Value
Dynamic ODT (Rtt_WR)Switches termination impedance on DQ/DM/DQS during write bursts only, improving signal integrity without affecting read paths
Write LevelingCalibrates DQ-to-DQS timing skew per byte lane using MPR pattern and controller-initiated training sequence
Multi-Purpose Register (MPR)Reads predefined 128-bit calibration pattern for system-level timing margin analysis and eye diagram optimization
Partial Array Self Refresh (PASR)Reduces self-refresh current up to 50% by refreshing only active banks, critical for battery-backed or low-power standby
Auto Self Refresh (ASR)Automatically adjusts refresh rate based on die temperature (via MR2 A6/A7), enabling reliable operation up to 95°C case temperature
Programmable Read Burst OrderSupports interleaved or nibble-sequential ordering to match host controller burst access patterns and reduce bus contention

Applications

Industrial PLC Controllers Network Switch ASIC Buffers

Use Scenario: Real-time deterministic execution in programmable logic controllers requiring guaranteed memory response under thermal stress and EMI.

IC Role / Device Role / Timing Role: Primary working memory with ASR-enabled extended temperature operation and PASR for low-power sleep states.

Use Value: Maintains 19 mA IDD6 self-refresh current at 95°C case temperature while supporting 1333 MT/s throughput for I/O scan buffers and ladder logic execution stacks.

Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches handling 10Gbps+ line rates with strict jitter and timing margin requirements.

IC Role / Device Role / Timing Role: Shared packet buffer memory interfaced to switch fabric ASICs via DDR3L PHY with write leveling and dynamic ODT.

Use Value: Enables sub-13.5 ns tAA and tRCD min timing at 667 MHz with calibrated DQ-DQS alignment, reducing bit error rate in burst-heavy traffic scenarios.

Medical Imaging Front-Ends Automotive ADAS Domain Controllers

Use Scenario: Image frame buffering in ultrasound or digital X-ray systems where data coherency and thermal reliability are safety-critical.

IC Role / Device Role / Timing Role: Dual-rank memory subsystem supporting burst-intensive pixel streaming with ZQ-calibrated output drivers.

Use Value: Delivers consistent 1.35 V operation across –40°C to +95°C with <±1% VDDQ tolerance, ensuring stable ADC-to-memory pipeline timing during cold-start and thermal soak.

Use Scenario: Vision processing memory for camera fusion and object detection in autonomous driving ECUs operating in under-hood environments.

IC Role / Device Role / Timing Role: Low-voltage DDR3L memory co-located with SoC, leveraging industrial temp rating and ASR for junction temperature management.

Use Value: Reduces system power by 15% vs. 1.5 V DDR3 while maintaining full JEDEC AC/DC specs at 95°C case, extending thermal headroom for sustained AI inference workloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K256M8RH-125:E (Micron)Same density (2Gb × 8), 93-ball FBGA, DDR3L-1600 base speed (125 MHz tCK), CL=11 defaultHigher base speed bin; requires revalidation of tRCD/tRP/tRC at 1333 MT/s; no TDQS/TDQS# supportSelect if higher-speed headroom or Micron-qualified supply chain is required; verify PCB layout compatibility with 93-ball footprint.
IS43TR16256B-125KBL (ISSI)16-bit wide (x16), 2Gb density, 96-ball FBGA, DDR3L-1600, CL=11, supports temperature-compensated refreshWider data bus reduces channel count but increases routing complexity; different ballout and VREFDQ placementPrefer for x16 interface designs or where ISSI's automotive qualification (AEC-Q100 Grade 3) is mandatory; not drop-in compatible.

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GU8KB15I TR offers native 78-ball WBGA compactness, TDQS# support for x8 DQS training, and guaranteed industrial temperature operation without derating - making it optimal for space-constrained, thermally aggressive embedded systems requiring JEDEC DDR3L-1333 compliance.

Availability

W632GU8KB15I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W632GU8KB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GU8KB series is part of Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with industrial temperature support and robust power management features.

FAQ

What is the maximum operating frequency and CAS latency supported by the W632GU8KB15I TR?

The W632GU8KB15I TR is rated for DDR3L-1333 operation with a maximum clock frequency of 667 MHz (tCK = 1.5 ns). Its supported CAS latencies include CL = 6, 7, 8, 9, and 10, with tAA/tRCD/tRP minimums of 13.5 ns at CL=9. The device also supports down-binning to CL=7 and CL=9 under specific SPD programming conditions per JEDEC specification JESD79-3F.

Does the W632GU8KB15I TR support both 1.35 V and 1.5 V operation?

Yes, the W632GU8KB15I TR supports dual-voltage operation: it is fully compliant with DDR3L specifications at 1.35 V nominal (VDD/VDDQ = 1.283 V to 1.45 V) and backward-compatible with standard DDR3 at 1.5 V ± 75 mV. Voltage switching between modes is supported via VDDQ/VDDQ pin control, and all DC/AC parameters remain valid across both ranges per datasheet Section 11.

How does the W632GU8KB15I TR implement On-Die Termination (ODT)?

The W632GU8KB15I TR provides programmable ODT via mode registers MR1 and MR2, supporting synchronous (Rtt_Nom) and dynamic (Rtt_WR) termination on DQ, DM, and DQS/DQS# pins. Valid RTT values include 60 Ω, 120 Ω, and 40 Ω. Dynamic ODT activates only during write operations, minimizing noise on read paths while maintaining signal integrity at 1333 MT/s.

What is the purpose of the ZQ pin on the W632GU8KB15I TR?

The ZQ pin on the W632GU8KB15I TR connects to an external 240 Ω ±1% precision resistor to ground and enables factory-trimmed calibration of output driver strength and ODT impedance. ZQ calibration commands (ZQCL and ZQCS) must be issued after power-up and periodically during operation to maintain ±1% impedance accuracy across voltage and temperature variations.

Can the W632GU8KB15I TR operate reliably at 95°C case temperature?

Yes, the W632GU8KB15I TR is qualified for industrial temperature range (–40°C ≤ TCASE ≤ 95°C). At 95°C, it requires either Auto Self-Refresh (ASR) enabled via MR2 or Manual Self-Refresh with extended temperature capability (MR2 A6=0, A7=1) to double refresh rate (tREFI = 3.9 µS), ensuring data retention while maintaining IDD6 ≤ 19 mA.

W632GU8KB15I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-WBGA (10.5x8)

W632GU8KB15I TR FAQ

1.How can I place an order for W632GU8KB15I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8KB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8KB15I TR reliable?

The price and inventory of W632GU8KB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8KB15I TR is usually 5 days.

3.What payment methods are accepted for W632GU8KB15I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8KB15I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8KB15I TR?

W632GU8KB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8KB15I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8KB15I TR?

For technical support, including W632GU8KB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8KB15I TR requirements.

6.How does Aetrix verify that W632GU8KB15I TR is sourced from the original manufacturer or authorized distributors?

All W632GU8KB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8KB15I TR meets industry standards.

7.What is the process for return or replacement of W632GU8KB15I TR?

All W632GU8KB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8KB15I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8KB15I TR part is unused and in its original packaging.

Return procedure for W632GU8KB15I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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