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Winbond Electronics Corporation W632GU8KB-15 TR

Part No.:
W632GU8KB-15 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-TFBGA
Datasheet:
AetrixW632GU8KB-15 TR.pdf
Description:
IC DRAM 2GBIT PAR 78WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,629

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Product details

Overview

W632GU8KB-15 TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM organized in 8 banks, operating at 667 MHz (DDR3L-1333, CL=9), with 1.35V nominal VDD/VDDQ supply, 9-9-9 timing (tRCD/tRP/tRC), and WBGA-78 package. It serves as main system memory in low-power embedded controllers, industrial HMIs, and network edge devices requiring JEDEC-compliant DDR3L interface and extended temperature support.

For engineers reviewing the W632GU8KB-15 TR datasheet, W632GU8KB-15 TR pinout, W632GU8KB-15 TR application, or W632GU8KB-15 TR equivalent, this page delivers verified DDR3L-1333 timing parameters, ball-mapped I/O roles, ODT configuration options, ZQ calibration behavior, and industrial-grade (-40°C to +95°C) operation details critical for memory subsystem validation and layout sign-off.

Technical Context

This DDR3L SDRAM implements a double-data-rate architecture with 8-bit prefetch, differential CK/CK# and DQS/DQS# signaling, and DLL-based clock-to-data alignment. It supports programmable CAS Latency (CL=6,7,8,9,10), CAS Write Latency (CWL=5–7), additive latency (AL=0, CL−1, CL−2), and on-die termination (ODT) with synchronous and dynamic modes.

Key operational features include asynchronous RESET#, ZQ calibration using external 240Ω resistor, multi-purpose register (MPR) for timing calibration pattern readout, write leveling for DQ-DQS skew compensation, and partial array self-refresh (PASR) for power optimization. All commands are sampled on CK rising / CK# falling crossing points.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Gb (256M words × 8 bits), 8-bank organization - enables 256MB byte-addressable memory space per device.
Data Rate 1333 Mb/s/pin (DDR3L-1333) - requires 667 MHz differential clock; supports tCK = 1.5 ns min for CL=9 operation.
Timing (CL-tRCD-tRP) 9-9-9 - defines 9-cycle row-to-column delay and precharge time; minimum tRCD/tRP = 13.5 ns at 667 MHz.
Supply Voltage VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical) - lower than standard DDR3 (1.5 V), reducing active and standby power by ~20%.
Operating Temperature -40°C to +95°C case temperature - validated for industrial environments; requires MR2 A6=1b for ASR above 85°C.
Package WBGA-78 (8 mm × 10.5 mm, 0.8 mm pitch) - RoHS-compliant, lead-free; compatible with standard DDR3L PCB stackups and reflow profiles.
Refresh Interval tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - mandates doubled refresh rate or ASR/PASR activation at high temperature.

Pinout & Package

WBGA-78 package (8 mm × 10.5 mm, 0.8 mm ball pitch), RoHS-compliant, lead-free construction. Ball grid follows JEDEC-standard DDR3L layout with dedicated VDDQ, VSSQ, VREFCA, VREFDQ, ZQ, and ODT balls.

Pin/Terminal Circuit Role Design Meaning
CK / CK# Differential clock input Samples all address/control inputs at crossing point; determines maximum data rate and timing closure margin.
DQS / DQS# Differential data strobe (bidirectional) Source-synchronous timing reference for read/write data; center-aligned on write, edge-aligned on read.
RESET# Asynchronous reset input Initiates power-up sequence and clears internal state; must be held low ≥ 200 ns before stable VDD/VDDQ.
ZQ Calibration reference terminal Connects to 240Ω ±1% resistor to ground; calibrates output driver impedance and ODT values during ZQINIT/ZQCAL.
ODT On-die termination control Enables/disables programmable termination (RTT_NOM, RTT_WR) on DQ/DQS/DM lines; affects signal integrity and stub length tolerance.
VREFCA / VREFDQ Reference voltage inputs VREFCA sets command/address threshold (0.5×VDD); VREFDQ sets data I/O threshold (0.5×VDDQ); must be decoupled.

Key Features

Feature Design Value
Dynamic ODT (Rtt_WR) Enables write-time termination switching (e.g., RTT_NOM → RTT_75Ω) to suppress write echo and improve eye opening at high speed.
Write Leveling Allows controller to adjust DQS launch delay relative to CK to compensate for board skew; required before normal operation.
Multi-Purpose Register (MPR) Outputs fixed 01010101 pattern on DQ pins during MPR read mode; used for system-level timing margin verification and DQ-to-DQS deskew.
Partial Array Self-Refresh (PASR) Reduces self-refresh current up to 50% by refreshing only active banks; configured via MR2 bits A0–A2; critical for battery-backed systems.
Auto Self-Refresh (ASR) Automatically extends refresh rate when junction temperature exceeds 85°C; eliminates thermal monitoring firmware overhead.

Applications

Industrial HMI Network Edge Router

Use Scenario: Touch-enabled panel PC running Linux with real-time UI rendering and local data logging.

IC Role / Device Role / Timing Role: Primary system memory interfacing directly to ARM Cortex-A9/A15 SoC DDR3L controller.

Use Value: DDR3L-1333 speed and 9-9-9 timing meet SoC memory bandwidth requirements while 1.35V operation reduces thermal load in sealed enclosures.

Use Scenario: Fanless Layer 3 switch handling 1Gbps packet buffering and ACL table storage.

IC Role / Device Role / Timing Role: Packet buffer memory accessed by switch fabric ASIC with burst-heavy read/write patterns.

Use Value: 8-bank concurrency and auto-precharge enable simultaneous packet ingress/egress buffering without bank conflicts.

Medical Diagnostic Terminal Smart Energy Gateway

Use Scenario: Portable ultrasound imaging device requiring deterministic frame buffer access and low standby power.

IC Role / Device Role / Timing Role: Frame buffer and application code memory supporting burst reads and partial refresh during idle periods.

Use Value: PASR and ASR reduce IDD6 to 19 mA at 85°C and allow selective bank refresh-extending battery life during diagnostic pauses.

Use Scenario: DIN-rail mounted smart meter concentrator aggregating 100+ submeters over RS485 and cellular backhaul.

IC Role / Device Role / Timing Role: Firmware execution and protocol stack memory for dual-core MCU with DDR3L interface.

Use Value: -40°C to +95°C rating ensures reliable boot and memory initialization across outdoor temperature extremes without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K128M8RH-125:E 1Gb density, DDR3L-1600 (CL=11), 96-ball FBGA; higher speed but half capacity; no PASR support. Requires two devices for 2Gb capacity; lacks partial array self-refresh-unsuitable for ultra-low-power sleep states. Select when system demands >1333 MT/s and board layout accommodates larger FBGA footprint and dual-die placement.
IS43TR16128B-15HBL 2Gb density, DDR3L-1333 (CL=9), 96-ball FBGA; same timing but different ballout; supports ODT but no write leveling. Missing write leveling and MPR-limits timing margin validation capability in high-speed layouts with long traces. Choose for cost-sensitive industrial designs where full JEDEC DDR3L compliance suffices and board-level skew is minimal.

Compared with MT41K128M8RH-125:E and IS43TR16128B-15HBL, W632GU8KB-15 TR uniquely combines 2Gb density, industrial temperature range, write leveling, PASR, and MPR in a compact WBGA-78 package-making it optimal for space-constrained, thermally demanding, and low-power DDR3L implementations.

Availability

W632GU8KB-15 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical diagnostic terminals, and smart energy gateways requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GU8KB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GU8KB-15 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-voltage, high-reliability embedded systems where power efficiency, extended temperature operation, and JEDEC compliance are mandatory.

FAQ

What is the maximum operating frequency of the W632GU8KB-15 TR?

The W632GU8KB-15 TR is rated for DDR3L-1333 operation, with a maximum clock frequency of 667 MHz (tCK = 1.5 ns). Its speed grade "-15" confirms compliance with JEDEC's 9-9-9 timing specification (tRCD/tRP/tRC = 9 cycles), and it supports optional down-binning to DDR3L-1066 if system timing margins permit. The W632GU8KB-15 TR does not support DDR3L-1600 or DDR3L-1866 speeds.

Does the W632GU8KB-15 TR support both 1.35V and 1.5V operation?

Yes, the W632GU8KB-15 TR is backward-compatible with standard DDR3 1.5V supplies: it operates at VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical) for DDR3L mode, and supports VDD/VDDQ = 1.425 V to 1.575 V (1.5 V ± 0.075 V) for legacy DDR3 compatibility. Voltage switching between modes requires proper sequencing and MR register reprogramming. The W632GU8KB-15 TR must not be operated outside these specified ranges.

How is ZQ calibration performed on the W632GU8KB-15 TR?

ZQ calibration on the W632GU8KB-15 TR uses an external 240Ω ±1% resistor connected between the ZQ ball and ground. Calibration is initiated via ZQINIT (at power-up) or ZQCAL (during operation) commands, adjusting output driver strength and ODT values to maintain 34Ω nominal impedance. The W632GU8KB-15 TR requires stable VDD/VDDQ and ambient temperature < 85°C during calibration; repeated ZQCAL is recommended after large temperature shifts.

What is the purpose of the MPR (Multi-Purpose Register) in the W632GU8KB-15 TR?

The MPR in the W632GU8KB-15 TR outputs a fixed 01010101 pattern on DQ[7:0] during MPR read mode (enabled via MR3). This deterministic pattern allows system designers to verify DQ-to-DQS timing margins, validate write leveling results, and perform board-level signal integrity testing without requiring functional memory access. The W632GU8KB-15 TR supports only Pattern 0 (01010101); other MPR patterns are not implemented.

Can the W632GU8KB-15 TR operate reliably at 95°C case temperature?

Yes, the W632GU8KB-15 TR is qualified for -40°C to +95°C case temperature operation. At temperatures above 85°C, Auto Self-Refresh (ASR) must be enabled (MR2 A6 = 1b) to double refresh rate (tREFI = 3.9 µs), or Manual Self-Refresh with extended temperature mode (MR2 A6 = 0b, A7 = 1b) must be used. The W632GU8KB-15 TR's IDD6 remains 19 mA across the full range, ensuring predictable power behavior.

W632GU8KB-15 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-WBGA (10.5x8)

W632GU8KB-15 TR FAQ

1.How can I place an order for W632GU8KB-15 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8KB-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8KB-15 TR reliable?

The price and inventory of W632GU8KB-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8KB-15 TR is usually 5 days.

3.What payment methods are accepted for W632GU8KB-15 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8KB-15 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8KB-15 TR?

W632GU8KB-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8KB-15 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8KB-15 TR?

For technical support, including W632GU8KB-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8KB-15 TR requirements.

6.How does Aetrix verify that W632GU8KB-15 TR is sourced from the original manufacturer or authorized distributors?

All W632GU8KB-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8KB-15 TR meets industry standards.

7.What is the process for return or replacement of W632GU8KB-15 TR?

All W632GU8KB-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8KB-15 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8KB-15 TR part is unused and in its original packaging.

Return procedure for W632GU8KB-15 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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