Winbond Electronics Corporation W632GU8MB09I

Overview

W632GU8MB09I from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M words × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature support (–40°C to +95°C), compliant with DDR3L-2133 (14-14-14 CL-tRCD-tRP), and delivering up to 2133 MT/s data rates for memory subsystems in networking, industrial control, and embedded computing.

For engineers reviewing the W632GU8MB09I datasheet, W632GU8MB09I pinout, W632GU8MB09I application, or W632GU8MB09I equivalent, this device requires attention to its VFBGA-78 package layout, DDR3L-2133 timing constraints, industrial-grade thermal validation, and compatibility with JEDEC-compliant DDR3L controllers supporting posted CAS, dynamic ODT, and ZQ calibration.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-based DQ/DQS-to-clock alignment, and source-synchronous double-data-rate I/O using differential CK/CK# and DQS/DQS# pairs. All commands are registered on the rising edge of CK, while data transfers occur on both edges of DQS.

It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), auto-precharge, multi-purpose register (MPR)-assisted timing calibration, write leveling, and dynamic on-die termination (Rtt_WR) for signal integrity optimization during high-speed writes.

Key Specifications

Pinout & Package

VFBGA-78 package with 0.8 mm ball pitch, 8 × 10.5 mm body size, and 1.0 mm profile. Ball map conforms to JEDEC MO-270AC standard for DDR3L SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, W632GU8MB09I delivers higher bandwidth (2133 vs. 1600 MT/s), industrial temperature robustness, and integrated calibration features (MPR, write leveling, dynamic ODT) essential for high-reliability embedded systems without additional PHY tuning effort.

Availability

W632GU8MB09I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W632GU8MB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GU8MB09I belongs to Winbond's DDR3L SDRAM product line, designed specifically for high-reliability embedded systems demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant interoperability with mainstream SoC memory controllers.

FAQ

What is the maximum data rate supported by W632GU8MB09I?

W632GU8MB09I supports DDR3L-2133 operation with a maximum data rate of 2133 MT/s, corresponding to a clock frequency of 1066 MHz. This is validated under industrial temperature conditions (–40°C to +95°C) and requires CL = 14, tRCD = tRP = 14 cycles, and proper ZQ calibration per JEDEC specification.

Does W632GU8MB09I support backward compatibility with standard DDR3 (1.5 V) systems?

Yes, W632GU8MB09I is fully backward compatible with 1.5 V DDR3 systems. It operates within VDD/VDDQ = 1.425 V to 1.575 V (1.5 V ± 0.075 V) and maintains full AC/DC parameter compliance, allowing drop-in replacement in legacy DDR3 designs without hardware modification.

How does the Multi-Purpose Register (MPR) function in W632GU8MB09I?

The MPR in W632GU8MB09I outputs a fixed 128-bit pattern (0x0000000000000000FFFFFFFFFFFFFFFF) upon MRS entry, enabling system-level timing calibration. It is used during write leveling and DQS-to-DQ deskew procedures to measure and correct inter-lane skew without requiring external test vectors or pattern generators.

What power-saving features are implemented in W632GU8MB09I?

W632GU8MB09I implements multiple power-saving features: Precharged Power Down and Active Power Down modes (enabled via CKE gating), Partial Array Self-Refresh (PASR) to refresh only active banks, and Auto Self-Refresh (ASR) for temperature-adaptive refresh scheduling - collectively reducing IDD6 to 11 mA and IDD0 to 140 mA at 2133 MT/s.

Is W632GU8MB09I pin-compatible with other Winbond DDR3L SDRAMs in the same family?

Yes, W632GU8MB09I shares identical VFBGA-78 pinout and ball assignment with all members of the W632GU8MB family (e.g., W632GU8MB-11, W632GU8MB11I). This allows direct substitution across speed grades and temperature variants without PCB layout changes, provided timing and voltage constraints are met.