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Winbond Electronics Corporation W632GU8MB-11
- Part No.:
- W632GU8MB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8MB-11.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,208
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Product details
Overview
W632GU8MB-11 from Winbond is a 2G-bit DDR3L SDRAM organized as 32M words × 8 banks × 8 bits, operating at 1.35V nominal supply with DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), supporting CAS Latency 5–13 and programmable CWL for memory subsystems in industrial computing and embedded controllers.
For engineers reviewing the W632GU8MB-11 datasheet, W632GU8MB-11 pinout, W632GU8MB-11 application, or W632GU8MB-11 equivalent, this device delivers JEDEC-compliant low-voltage DRAM performance with ZQ calibration, dynamic ODT, write leveling, and multi-purpose register support for system-level timing alignment in space-constrained designs.
Technical Context
The W632GU8MB-11 implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write transfers. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable burst lengths (BL8/BC4).
Its command interface accepts all operations on the rising edge of CK, while data and DM are referenced to both edges of DQS/DQS#. The device integrates asynchronous RESET#, on-die termination (RTT_NOM/RTT_WR), and ZQ calibration using an external 240Ω resistor to ground.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits), enabling 256 MB byte-addressable capacity |
| Data Rate | 1866 MT/s (DDR3L-1866), requiring 933 MHz clock frequency for full bandwidth |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V, compatible with 1.5 V DDR3 systems via voltage switch |
| CAS Latency | Configurable CL = 5, 6, 8, 10, 13; tAA min = 13.91 ns at CL=13 guarantees timing margin for high-speed reads |
| Refresh Interval | tREFI = 7.8 µs at 0°C ≤ TCASE ≤ 85°C; doubles to 3.9 µs above 85°C with ASR or manual self-refresh |
| Power Consumption | IDD0 ≤ 135 mA (active bank), IDD6 ≤ 11 mA (self-refresh), supporting thermal-limited industrial deployments |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant lead-free construction |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint and 1.0 mm profile, optimized for high-density PCB layouts in industrial and networking equipment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address lines; A12–A14 encode bank select per JEDEC DDR3L |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation and interleaving |
| CK, CK# | Differential Clock | Edge-triggered command latch point; defines all timing windows and data valid windows |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; referenced to DQS/DQS# for double-data-rate transfers |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe: center-aligned on writes, edge-aligned on reads; DLL-aligned to CK |
| DM | Data Mask | Per-byte write mask active on rising DQS edge; suppresses masked write data |
| RESET# | Asynchronous Reset | Active-low initialization signal; required for power-up sequence and functional reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM and RTT_WR impedances during reads/writes |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., WE# + RAS# + CAS# = WRITE) |
| CKE | Clock Enable | Gates internal clocks; controls entry/exit from power-down and self-refresh modes |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | One-time or periodic output driver and ODT impedance tuning using external 240Ω reference resistor |
| Write Leveling | System-initiated training mode to calibrate DQS-to-CK skew per byte lane, improving write setup/hold margins |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern readout for system-level timing validation without disturbing memory contents |
| Dynamic ODT (Rtt_WR) | Programmable on-the-fly ODT activation during WRITE bursts only, reducing stub reflections and crosstalk |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks, extending battery life in portable applications |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with local data buffering and firmware update storage. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7 or RISC-V SoC, interfaced via AXI or AHB bus with DDR3L PHY. Use Value: 1866 MT/s bandwidth sustains >1.2 GB/s sustained read throughput for multi-threaded ladder logic scanning and I/O mapping. | Use Scenario: Packet buffering and forwarding table storage in Layer 3 switching ASICs with integrated DDR3L controller. IC Role / Device Role / Timing Role: External frame buffer for traffic shaping and QoS queue management, synchronized to 933 MHz system clock. Use Value: Dynamic ODT and write leveling ensure signal integrity across 10+ inch PCB traces at 1866 MT/s, minimizing bit errors in 10Gbps line cards. |
| Medical Imaging Terminals | Automated Test Equipment (ATE) |
Use Scenario: DICOM image rendering pipeline requiring rapid access to uncompressed 12-bit grayscale buffers. IC Role / Device Role / Timing Role: Frame store for GPU-accelerated display engine, configured with CL=10 and AL=CL−1 for optimal read latency. Use Value: 8-bank interleaving enables concurrent fetches from four 1K-page rows, sustaining 1.1 GB/s read bandwidth for 4K@60fps UI rendering. | Use Scenario: High-speed digital pattern memory for vector-based stimulus generation in semiconductor test platforms. IC Role / Device Role / Timing Role: Pattern storage for 16-bit parallel digital I/O channels, accessed via burst reads aligned to tester clock domain. Use Value: Programmable CWL and tRCD/tRP matching to tester timing engines reduces pattern load latency by 22% versus fixed-latency alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | 1.5 V only; no 1.35 V DDR3L support; different tREFI scaling above 85°C; 96-ball FBGA | Requires separate 1.5 V rail; lacks ZQ calibration and dynamic ODT; higher IDD0/IDD6 | Select only if legacy 1.5 V infrastructure exists and temperature range stays ≤85°C |
| IS43TR16128B-125KBL | 16-bit bus width; 2 Gb density same; supports CL=9–11 only; no PASR or MPR | Needs bus-width adaptation; limited latency flexibility; no system-level calibration features | Choose when wider data path is needed and write leveling/ZQ are not required |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W632GU8MB-11 provides native 1.35 V operation, extended temperature support up to 95°C, and integrated system calibration tools-making it optimal for new industrial designs where power efficiency, thermal resilience, and timing margin are critical.
Availability
W632GU8MB-11 is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging terminals, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile RAM products.
The W632GU8MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, low-voltage compatibility, and JEDEC-compliant timing robustness.
FAQ
What is the maximum operating frequency supported by the W632GU8MB-11?
The W632GU8MB-11 supports DDR3L-1866 operation with a maximum clock frequency of 933 MHz (1866 MT/s data rate). Its tCK(AVG) specification allows stable operation down to 1.875 ns (533 MHz) for CL=7/CWL=6 configurations, but full speed compliance requires adherence to the 13-13-13 timing bin defined in the datasheet. This ensures interoperability with standard DDR3L controllers without derating.
Does the W632GU8MB-11 support backward compatibility with standard 1.5 V DDR3 systems?
Yes, the W632GU8MB-11 supports dual-voltage operation: it functions at 1.35 V nominal for DDR3L mode and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. Voltage switching between modes is controlled via VDD/VDDQ supply rails and does not require changes to command sequences or timing parameters, enabling drop-in replacement in mixed-voltage platforms.
How does the W632GU8MB-11 implement On-Die Termination (ODT)?
The W632GU8MB-11 supports both synchronous and dynamic ODT modes. RTT_NOM values (60 Ω, 120 Ω, 40 Ω) are set via MR1, while RTT_WR (60 Ω, 120 Ω, 40 Ω) is activated dynamically during WRITE bursts via ODT pin assertion. This dual-mode configuration minimizes signal reflections on bidirectional DQ/DQS buses without requiring external termination resistors.
What is the purpose of the Multi-Purpose Register (MPR) in the W632GU8MB-11?
The MPR in the W632GU8MB-11 stores a fixed 128-bit calibration pattern used during system initialization to verify DQ-DQS timing alignment without accessing user data. When enabled via MR3, the MPR outputs this pattern on DQ pins during READ commands, allowing host controllers to perform eye-diagram measurements and adjust delay settings-critical for achieving reliable 1866 MT/s operation on lossy PCBs.
Can the W632GU8MB-11 operate in Partial Array Self Refresh (PASR) mode?
Yes, the W632GU8MB-11 supports PASR via MR2 programming to refresh only selected banks (1/2/4/8), reducing self-refresh current from 11 mA to as low as 5.5 mA depending on configuration. This feature is especially valuable in battery-powered or thermally constrained applications such as portable diagnostic devices or fanless industrial gateways where power budget and thermal headroom are limited.
W632GU8MB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8MB-11 FAQ
1.How can I place an order for W632GU8MB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8MB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8MB-11 reliable?
The price and inventory of W632GU8MB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8MB-11 is usually 5 days.
3.What payment methods are accepted for W632GU8MB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8MB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8MB-11?
W632GU8MB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8MB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8MB-11?
For technical support, including W632GU8MB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8MB-11 requirements.
6.How does Aetrix verify that W632GU8MB-11 is sourced from the original manufacturer or authorized distributors?
All W632GU8MB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8MB-11 meets industry standards.
7.What is the process for return or replacement of W632GU8MB-11?
All W632GU8MB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8MB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8MB-11 part is unused and in its original packaging.
Return procedure for W632GU8MB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8MB-11 Tags
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