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Winbond Electronics Corporation W632GU8MB11I
- Part No.:
- W632GU8MB11I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8MB11I.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,495
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Product details
Overview
W632GU8MB11I from Winbond is a 2G-bit DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature support (–40°C to +95°C), compliant with DDR3L-1866 (13-13-13) timing, and delivering up to 1866 MT/s data rates for memory subsystems in networking, industrial control, and embedded computing.
For engineers reviewing the W632GU8MB11I datasheet, W632GU8MB11I pinout, W632GU8MB11I application, or W632GU8MB11I equivalent, key selection factors include its 78-ball VFBGA package, programmable CAS latency (CL = 5–13), on-die termination (ODT), ZQ calibration, and support for write leveling and multi-purpose register (MPR)-based system timing calibration.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking with edge-aligned command capture, and source-synchronous DQS/DQS# strobes center-aligned on writes and edge-aligned on reads. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable CAS write latency (CWL = 5–7) per frequency bin.
The device integrates asynchronous RESET# for power-up initialization, dynamic ODT for write signal integrity, partial array self-refresh (PASR), auto self-refresh (ASR), and ZQ calibration using an external 240 Ω reference resistor. All DC and AC parameters meet JEDEC DDR3L standards for industrial-grade operation at 1.35 V ± 0.067 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits); enables 256 MB of byte-accessible storage per device. |
| Data Rate | 1866 MT/s (DDR3L-1866); supports high-bandwidth interfaces in SoC-based systems. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; compatible with 1.35 V nominal DDR3L rails and backward-compatible with 1.5 V DDR3. |
| CAS Latency | CL = 5, 6, 8, 10, 13; selectable via mode register to balance timing margin and throughput. |
| Burst Length | BL8 fixed or BC4 on-the-fly; determines minimum read/write transfer size and bus efficiency. |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C); requires doubled refresh rate at extended temperature. |
| Package | 78-ball VFBGA (8 mm × 10.5 mm, 1.0 mm height); RoHS-compliant, window-type BGA for thermal and signal integrity. |
Pinout & Package
W632GU8MB11I uses a 78-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, designed for high-density PCB layouts and thermal dissipation in industrial applications. Pin functions follow JEDEC-standard DDR3L ball assignment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Power supply inputs | Separate 1.35 V core (VDD) and I/O (VDDQ) rails; decoupling required per JEDEC layout guidelines. |
| CK, CK# | Differential clock inputs | Commands latched at CK rising / CK# falling crossing; defines system timing reference. |
| DQS, DQS# | Differential data strobes | Source-synchronous; center-aligned with write data, edge-aligned with read data for timing closure. |
| RESET# | Asynchronous reset input | Active-low; initiates power-up initialization sequence and functional reset without clock dependency. |
| ODT | On-die termination control | Dynamic or synchronous ODT enable; selects 60 Ω, 120 Ω, or 40 Ω termination for DQ/DM/DQS lines. |
| ZQ | ZQ calibration reference | Connects to 240 Ω ±1 % external resistor to ground; calibrates output driver and ODT impedances. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | CAS Write Latency configurable per frequency (CWL = 5–7), enabling precise write timing alignment across speed bins. |
| Write Leveling | Hardware-assisted calibration mode adjusts DQS-to-CK skew per byte lane, critical for reliable high-speed write capture. |
| Multi-Purpose Register (MPR) | Predefined bit pattern readout supports system-level timing margin validation without external test equipment. |
| Dynamic ODT | Termination impedance (Rtt_WR) activated only during write bursts, reducing standby power and improving signal integrity. |
| Partial Array Self-Refresh (PASR) | Selectively refreshes active banks only, cutting IDD6 current by up to 40 % in partial-memory-use scenarios. |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multiple I/O modules and motion control loops. IC Role / Device Role / Timing Role: Primary working memory supporting burst-mode DMA transfers between CPU and fieldbus peripherals. Use Value: 13-13-13 timing and industrial temperature rating ensure stable operation under factory-floor thermal cycling and EMI stress. | Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches processing 10 GbE line-rate traffic. IC Role / Device Role / Timing Role: Shared buffer pool for ingress/egress queues with low-latency random access and burst coalescing. Use Value: 1866 MT/s bandwidth and dynamic ODT maintain signal integrity across dense backplane traces and multi-lane interfaces. |
| Medical Imaging Frame Store | Automotive ADAS Video Preprocessor |
Use Scenario: Temporary frame storage in ultrasound or digital X-ray systems requiring rapid parallel image acquisition and reconstruction. IC Role / Device Role / Timing Role: Dual-port-capable memory bank accessed concurrently by imaging sensor interface and GPU pipeline. Use Value: Eight internal banks and BL8 bursting enable overlapping read/write operations across modalities without bus contention. | Use Scenario: On-camera preprocessing buffer for surround-view or forward-collision systems capturing and warping multi-sensor video streams. IC Role / Device Role / Timing Role: Low-power, high-reliability memory for real-time pixel manipulation prior to SoC ingestion. Use Value: DDR3L-1866 speed bin with –40°C to +95°C rating meets automotive AEC-Q200 ambient requirements and ASIL-B functional safety margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8RH-125:E | Same density and DDR3L-1866 speed grade but 96-ball FBGA; higher IDD0/IDD1 current draw; no PASR support. | Targeted at server/desktop platforms with larger board area and less aggressive thermal constraints. | Choose when footprint compatibility is secondary to broad ecosystem support and long-term Micron availability. |
| IS43TR16256B-125KBL | 16-bit bus width (vs. 8-bit), same 2 Gb density and industrial temp range; different ball map and ZQ resistor value (200 Ω). | Suitable for 16-bit memory channels in ARM-based industrial gateways where bus width matches controller interface. | Choose only if controller supports x16 configuration and board layout accommodates alternate pinout and ZQ network. |
Compared with W632GU8MB11I, MT41K256M8RH-125:E offers broader vendor support but lacks PASR and requires more board space, while IS43TR16256B-125KBL provides wider data path at cost of incompatible pinout and ZQ design-neither is pin-compatible, and both require PCB redesign and firmware revalidation.
Availability
W632GU8MB11I is available at Aetrix Electronics and suitable for industrial automation, networking infrastructure, and medical electronics requiring stable component supply, extended temperature operation, and JEDEC-compliant DDR3L performance.
Supply support for W632GU8MB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and analog ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.
The W632GU8MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, engineered for reliability in harsh environments including factory floors, telecom base stations, and medical diagnostic equipment.
FAQ
What is the operating temperature range for W632GU8MB11I?
W632GU8MB11I is rated for industrial operation from –40°C to +95°C case temperature (TCASE). This range is validated per JEDEC JESD22-A104 and requires doubling the refresh interval to 3.9 µS above 85°C, achievable via Auto Self-Refresh (ASR) or Manual Self-Refresh with MR2[7:6] = 10b. The 'I' suffix explicitly denotes this industrial qualification.
Does W632GU8MB11I support backward compatibility with standard DDR3 systems?
Yes, W632GU8MB11I supports 1.5 V ± 0.075 V operation in addition to its native 1.35 V DDR3L mode. This dual-voltage capability allows seamless integration into legacy DDR3 designs without hardware modification, provided VDD and VDDQ are supplied at 1.5 V and mode registers are configured per JEDEC DDR3 specification.
How does write leveling work on W632GU8MB11I?
W632GU8MB11I implements JEDEC-compliant write leveling using its dedicated DQS strobe and MPR functionality. During calibration, the memory controller issues a specific MRS command to enter write leveling mode, then adjusts per-byte DQS delay until the DRAM echoes back a known pattern-enabling precise DQS-to-CK skew compensation for reliable write capture at 1866 MT/s.
What termination options does W632GU8MB11I provide for signal integrity?
W632GU8MB11I supports three on-die termination (ODT) configurations: synchronous ODT (Rtt_Nom = 60 Ω, 120 Ω, or 40 Ω), dynamic ODT (Rtt_WR = 60 Ω or 120 Ω activated only during writes), and asynchronous ODT mode transitions. These are programmed via MR1 and MR2, and calibrated using the ZQ pin with a 240 Ω external resistor.
Can W632GU8MB11I operate with CAS Latency 7 or 9?
No-W632GU8MB11I (DDR3L-1866 speed grade) supports only CL = 5, 6, 8, 10, and 13 per its datasheet Table 4. CL = 7 and CL = 9 are not listed in the Supported CL Settings for -11/11I/11J variants. Attempting to program unsupported CL values may result in undefined behavior or initialization failure.
W632GU8MB11I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8MB11I FAQ
1.How can I place an order for W632GU8MB11I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8MB11I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8MB11I reliable?
The price and inventory of W632GU8MB11I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8MB11I is usually 5 days.
3.What payment methods are accepted for W632GU8MB11I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8MB11I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8MB11I?
W632GU8MB11I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8MB11I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8MB11I?
For technical support, including W632GU8MB11I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8MB11I requirements.
6.How does Aetrix verify that W632GU8MB11I is sourced from the original manufacturer or authorized distributors?
All W632GU8MB11I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8MB11I meets industry standards.
7.What is the process for return or replacement of W632GU8MB11I?
All W632GU8MB11I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8MB11I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8MB11I part is unused and in its original packaging.
Return procedure for W632GU8MB11I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8MB11I Tags
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M24C02-WMN6TP
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