My Inquiry
My Account
Winbond Electronics Corporation W632GU8MB12I
- Part No.:
- W632GU8MB12I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8MB12I.pdf
- Description:
- IC DRAM 2GBIT PARALLEL 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,979
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W632GU8MB12I from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1600 speed grade (11-11-11 CL-tRCD-tRP), and delivering up to 1600 MT/s data rates for memory subsystems in networking infrastructure and industrial control systems.
For engineers reviewing the W632GU8MB12I datasheet, W632GU8MB12I pinout, W632GU8MB12I application, or W632GU8MB12I equivalent, this page provides verified timing parameters, validated ball mapping, confirmed ODT and ZQ calibration behavior, industrial-grade thermal derating, and JEDEC-compliant DDR3L-1600 interoperability details essential for high-reliability embedded memory design.
Technical Context
This device implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and high bandwidth efficiency. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), and posted CAS for optimized command bus utilization.
Key timing controls include DLL-aligned DQS-to-clock synchronization, write leveling for per-lane skew compensation, multi-purpose register (MPR) readout for system-level calibration, and dynamic on-die termination (Rtt_WR) activated during write bursts to maintain signal integrity on high-speed data buses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits |
| Data Rate | 1600 MT/s (DDR3L-1600), tCK = 1.25 ns min (CL11) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; backward compatible with 1.5 V ±75 mV |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C (industrial grade) |
| CAS Latency | Configurable CL = 5, 6, (7), 8, (9), 10, 11 - tRCD/tRP min = 13.75 ns at CL11 |
| CAS Write Latency | Configurable CWL = 5, 6, 7, 8 - WL = AL + CWL determines write timing alignment |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh required) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and window-type BGA construction using lead-free solder finish per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and memory location selection |
| BA0–BA2 | Bank Address | Select one of eight internal banks for concurrent operation |
| CK/CK# | Differential Clock | Edge-triggered command latch reference; inputs sampled at CK rising / CK# falling crossing |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus synchronized to DQS/DQS# strobes |
| DQS/DQS# | Differential Data Strobe | Source-synchronous strobe: edge-aligned on reads, center-aligned on writes |
| DM | Data Mask | Per-byte write mask controlling which DQ bits are written during burst operations |
| RESET# | Asynchronous Reset | Active-low initialization trigger for power-up sequence and functional reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of programmable termination resistors on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Inputs | Standard SDRAM command signals decoded with address on CK edge |
| VDD/VDDQ | Power Supplies | Separate 1.35 V core (VDD) and I/O (VDDQ) supplies; both support 1.5 V fallback |
| VSS | Ground | Signal and power return reference plane for noise-sensitive high-speed signaling |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | One-time or periodic output driver and ODT impedance tuning using external 240 Ω ±1% resistor to ground |
| Dynamic ODT (Rtt_WR) | Programmable termination activation only during write bursts to reduce stub reflections and improve write eye margin |
| Write Leveling | Per-lane DQS delay adjustment via MRS to compensate for board trace skew relative to CK |
| Multi-Purpose Register (MPR) | Predefined bit pattern readout for system-level timing calibration without disturbing memory contents |
| Partial Array Self Refresh (PASR) | Reduced self-refresh current by refreshing only active banks, lowering IDD6 in partial-use scenarios |
| Auto Self-Refresh (ASR) | Temperature-triggered automatic entry into self-refresh when ambient exceeds 85°C, eliminating host intervention |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with cyclic data exchange between CPU and I/O modules. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M4-based controllers requiring low-latency random access and sustained burst throughput. Use Value: DDR3L-1600 speed with CL11 ensures sub-14 ns tRCD access while industrial temp rating guarantees stable operation across factory floor thermal cycles. |
Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2/L3 switching ASICs before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth packet buffer interfacing directly to switch fabric controller with 8-bit wide DQ bus and DQS-strobed timing. Use Value: Dynamic ODT and write leveling maintain signal integrity at 1600 MT/s across multi-layer PCB traces, reducing bit error rate in 10/25 Gbps switch designs. |
| Medical Imaging Frame Store | Automotive ADAS Preprocessing Cache |
Use Scenario: Intermediate frame buffering in ultrasound or digital X-ray systems where image data must be held for real-time DSP pipeline processing. IC Role / Device Role / Timing Role: Low-power, high-reliability memory staging area between ADC interface and FPGA-based image processor. Use Value: 1.35 V DDR3L operation cuts dynamic power vs. standard DDR3; PASR reduces self-refresh current during idle imaging intervals. |
Use Scenario: On-camera preprocessing cache for vision ECUs performing lane detection and object classification prior to CAN/FlexRay transmission. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for CNN inference engines running on automotive-grade SoCs. Use Value: –40°C to +95°C rating meets AEC-Q100 Grade 2 requirements; ASR mode enables safe thermal shutdown during extended sun-load conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-125KBL | 16-bit bus width, 4 Gb density, same DDR3L-1600 speed bin and industrial temp range | Requires PCB redesign for wider data bus and different ball count (96 vs. 78) | Choose when higher bandwidth per cycle is needed and layout allows 16-bit interface |
| MT41K256M8DA-125:A | Micron part with identical 2 Gb × 8 configuration, VFBGA-78, and DDR3L-1600 spec; supports same CL/CWL ranges | Same pinout and electrical interface; JEDEC-compliant drop-in replacement with validated interoperability | Preferred for second-source assurance where Micron qualification and long-term lifecycle support are prioritized |
Compared with IS43TR16256B-125KBL, W632GU8MB12I offers narrower 8-bit bus compatibility with existing legacy controllers and lower pin-count routing complexity; versus MT41K256M8DA-125:A, it provides equivalent performance with Winbond's industrial reliability focus and distinct ZQ calibration implementation.
Availability
W632GU8MB12I is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network switch packet buffers, medical imaging frame stores, and automotive ADAS preprocessing caches requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8MB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W632GU8MB12I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with industrial temperature resilience and robust signal integrity features.
FAQ
What is the maximum supported CAS Latency for W632GU8MB12I at DDR3L-1600 speed?
W632GU8MB12I supports CAS Latency (CL) values of 5, 6, (7), 8, (9), 10, and 11 at DDR3L-1600 speed. The CL11 setting corresponds to the 11-11-11 timing bin and requires tRCD/tRP ≥13.75 ns. Optional CL7 and CL9 are supported but require tAA/tRCD/tRP ≤13.125 ns per JEDEC specification.
Does W632GU8MB12I support both 1.35 V and 1.5 V operation?
Yes, W632GU8MB12I is fully backward compatible with 1.5 V DDR3 operation. It operates at 1.35 V nominal (1.283–1.45 V range) for DDR3L mode and accepts 1.5 V ±75 mV for legacy DDR3 systems. VDD and VDDQ must be supplied at the same voltage level during operation.
How does the ZQ calibration function work on W632GU8MB12I?
W632GU8MB12I performs ZQ calibration using an external 240 Ω ±1% precision resistor connected between ZQ pin and VSS. The internal circuit adjusts output driver strength and ODT impedance to match this reference, ensuring consistent signal integrity across voltage and temperature variations. Calibration is initiated via ZQCL command and recommended after power-up and periodically during operation.
What is the purpose of the Multi-Purpose Register (MPR) in W632GU8MB12I?
The MPR in W632GU8MB12I provides a predefined 128-bit calibration pattern readable via standard READ commands. This enables system-level timing margin testing and write leveling without accessing actual memory content, preserving data integrity during field calibration and manufacturing test procedures.
Is W632GU8MB12I pin-compatible with other Winbond DDR3L SDRAMs in the same package?
W632GU8MB12I uses the standard VFBGA-78 ball map defined in the Winbond DDR3L family datasheet. It shares identical pinout with all W632GU8MB variants (e.g., -09I, -11J, -15), enabling PCB reuse across speed grades and temperature options within the same density and bus width configuration.
W632GU8MB12I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8MB12I FAQ
1.How can I place an order for W632GU8MB12I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8MB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8MB12I reliable?
The price and inventory of W632GU8MB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8MB12I is usually 5 days.
3.What payment methods are accepted for W632GU8MB12I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8MB12I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8MB12I?
W632GU8MB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8MB12I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8MB12I?
For technical support, including W632GU8MB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8MB12I requirements.
6.How does Aetrix verify that W632GU8MB12I is sourced from the original manufacturer or authorized distributors?
All W632GU8MB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8MB12I meets industry standards.
7.What is the process for return or replacement of W632GU8MB12I?
All W632GU8MB12I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8MB12I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8MB12I part is unused and in its original packaging.
Return procedure for W632GU8MB12I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8MB12I Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
