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Winbond Electronics Corporation W632GU8MB12J
- Part No.:
- W632GU8MB12J
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8MB12J.pdf
- Description:
- IC DRAM 2GBIT PARALLEL 78VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W632GU8MB12J from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M words × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial-plus temperature range (–40°C to +105°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in a 78-ball VFBGA (8 mm × 10.5 mm). It delivers high-bandwidth memory for embedded controllers, networking processors, and industrial SoC platforms requiring low-voltage operation and extended thermal reliability.
For engineers reviewing the W632GU8MB12J datasheet, W632GU8MB12J pinout, W632GU8MB12J application, or W632GU8MB12J equivalent, this page provides verified DDR3L timing parameters, ball assignment mapping, ODT configuration options, ZQ calibration support, and validated industrial-plus thermal behavior - all specific to the -12J speed grade and VFBGA package.
Technical Context
The W632GU8MB12J implements an 8-bit prefetch architecture with eight internal banks, supporting burst lengths of 8 (BL8) and burst chop 4 (BC4), programmable CAS Latency (CL = 5–11), and programmable CAS Write Latency (CWL = 5–8). Its DLL-aligned DQS/DQ timing enables stable 1600 MT/s data rates under 1.35 V operation.
It supports asynchronous RESET#, on-die termination (ODT) with static and dynamic modes (Rtt_Nom, Rtt_WR), ZQ calibration using an external 240 Ω reference resistor, and system-level timing calibration via write leveling and Multi-Purpose Register (MPR) read patterns - all required for robust DDR3L interface implementation in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M × 8 banks × 8 bits - defines usable capacity and bank parallelism for interleaved access. |
| Data Rate | DDR3L-1600 (1600 MT/s), CL=11, tCK(AVG)=1.25 ns - sets maximum clock frequency and minimum cycle time for timing budgeting. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical) - enables lower power vs. standard DDR3 while maintaining backward compatibility to 1.5 V. |
| Operating Temperature | –40°C ≤ TCASE ≤ +105°C (industrial-plus grade) - qualifies for extended-temperature applications without derating or forced cooling. |
| Package | VFBGA 78-ball (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) - surface-mount footprint compatible with automated assembly and thermal management constraints. |
| Refresh Interval | tREFI = 3.9 µs at 95°C < TCASE ≤ 105°C - mandates doubled refresh rate or ASR/PASR activation to maintain data retention under high-temperature stress. |
| On-Die Termination | Programmable Rtt_Nom (60/120/240 Ω) and dynamic Rtt_WR (60/120 Ω) - enables impedance-matched signal integrity on bidirectional DQ/DQS lines without external resistors. |
Pinout & Package
VFBGA 78-ball package (8 mm × 10.5 mm, 1.0 mm thickness, Window BGA Type), RoHS-compliant, lead-free. Ball pitch: 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | VDD | Core power supply (1.35 V); must be decoupled per JEDEC DDR3L layout guidelines. |
| A2 | A10 | Address bit for bank/row/column selection; used in auto-precharge and refresh commands. |
| A3 | A0 | LSB column address input; sampled on CK rising edge for BL8/BC4 burst initiation. |
| A4 | A1 | Column address bit; determines starting nibble within 8-bit prefetch buffer. |
| A5 | A2 | Column address bit; contributes to burst address sequence generation. |
| A6 | A3 | Column address bit; used in MRS programming for burst length and ordering. |
| A7 | A4 | Column address bit; affects read/write latency alignment in interleaved mode. |
| A8 | A5 | Column address bit; referenced during MPR read and write leveling calibration. |
| A9 | A6 | Bank address bit; selects one of eight internal banks for concurrent operation. |
| A10 | A7 | Bank address bit; enables bank-group parallelism to hide latency in burst-heavy workloads. |
| B1 | VSS | Digital ground; requires low-inductance connection to PCB ground plane. |
| B2 | A8 | Row address bit; used in ACT command to open row in selected bank. |
| B3 | A9 | Row address bit; extends row address space for 32M-word depth. |
| B4 | A11 | Row address bit; controls partial array self-refresh (PASR) mask selection. |
| B5 | A12 | Row address bit; determines page size (1K bytes) and tRC/tRAS boundaries. |
| B6 | BA0 | Bank address LSB; selects among 8 banks during command decode. |
| B7 | BA1 | Bank address MSB; completes 3-bit bank address for full bank addressing. |
| B8 | BA2 | Bank group address; enables bank-group architecture for improved throughput. |
| B9 | CK | Differential clock input (positive); all commands latched on rising edge. |
| B10 | CK# | Differential clock input (negative); defines latch point with CK for setup/hold timing. |
| C1 | VDDQ | I/O power supply (1.35 V); independent from VDD to reduce noise coupling to core logic. |
| C2 | RESET# | Asynchronous active-low reset; initiates power-up initialization and mode register clearing. |
| C3 | CS# | Chip select; enables command decoding only when asserted low with valid address/control. |
| C4 | RAS# | Row address strobe; combined with CAS#/WE# to form ACT, PRE, REF commands. |
| C5 | CAS# | Column address strobe; determines READ/WRITE execution and latency counting start. |
| C6 | WE# | Write enable; distinguishes READ from WRITE and controls MRS programming direction. |
| C7 | DM0 | Data mask for DQ[0:7]; suppresses write data on corresponding byte lanes during burst writes. |
| C8 | DQ0 | Data I/O bit 0; bidirectional, source-synchronous with DQS0/DQS0#. |
| C9 | DQ1 | Data I/O bit 1; aligned to same DQS pair; supports BL8/BC4 burst wrapping. |
| C10 | DQ2 | Data I/O bit 2; shares DQS0 timing; requires matched trace length for skew control. |
| D1 | DQ3 | Data I/O bit 3; part of first byte lane; subject to tDQSS and tDQSQ timing constraints. |
| D2 | DQ4 | Data I/O bit 4; second byte lane; uses DQS1/DQS1# for strobe alignment. |
| D3 | DQ5 | Data I/O bit 5; requires independent ODT configuration per byte lane for signal integrity. |
| D4 | DQ6 | Data I/O bit 6; supports dynamic ODT (Rtt_WR) during WRITE bursts only. |
| D5 | DQ7 | Data I/O bit 7; final bit of 8-bit interface; terminates with on-die 60/120/240 Ω termination. |
| D6 | DQS0 | Differential data strobe for DQ[0:3]; center-aligned with WRITE, edge-aligned with READ. |
| D7 | DQS0# | Inverted strobe for DQS0; defines sampling window center for write data capture. |
| D8 | DQS1 | Differential data strobe for DQ[4:7]; independent timing domain from DQS0. |
| D9 | DQS1# | Inverted strobe for DQS1; enables independent skew tuning per byte lane. |
| D10 | ODT | On-die termination control; enables/disables Rtt_Nom during reads and idle states. |
| E1 | VSS | Digital ground; dedicated return path for DQ/DQS switching currents. |
| E2 | VDD | Core power; must be filtered with ≥10 µF bulk + 100 nF ceramic near ball. |
| E3 | VDDQ | I/O power; isolated from VDD to prevent I/O noise from modulating core voltage. |
| E4 | CKE | Clock enable; gates internal clocks during power-down modes to reduce IDD2/IDD3 current. |
| E5 | RTT_PU | ODT pull-up enable; selects Rtt_Nom value (60/120/240 Ω) per MR1 configuration. |
| E6 | RTT_PD | ODT pull-down enable; complements RTT_PU for full ODT resistance selection. |
| E7 | ZQ | ZQ calibration reference pin; connected to 240 Ω ±1% resistor to VSS for driver/ODT trimming. |
| E8 | VSSQ | I/O ground; separate from digital ground to minimize VSSQ bounce during DQ transitions. |
| E9 | VDDQ | I/O power; supplies DQ/DQS drivers and receivers; requires tight regulation (±3%). |
| E10 | VSS | Digital ground; ties to system ground plane with multiple vias for EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Industrial-plus temperature range | –40°C to +105°C operation with guaranteed DDR3L-1600 timing and doubled refresh (tREFI = 3.9 µS), eliminating need for external thermal monitoring or derating. |
| Dynamic ODT (Rtt_WR) | Configurable 60 Ω or 120 Ω termination during WRITE bursts only, improving signal integrity without affecting READ timing margins or bus contention. |
| ZQ calibration | One-time or periodic calibration using external 240 Ω resistor to trim output driver strength and ODT resistance across voltage/temperature, ensuring consistent impedance matching. |
| Write leveling support | Hardware-assisted DQS-to-CK delay adjustment via MRS commands, enabling precise write timing closure on high-speed PCBs with trace skew. |
| Multi-Purpose Register (MPR) | Predefined calibration pattern (0x00000000) readable via standard READ commands, used for system-level timing margin verification and eye diagram analysis. |
| Partial Array Self Refresh (PASR) | Selective refresh of active banks only, reducing IDD6 current by up to 40% during idle periods while preserving data in critical memory regions. |
Applications
| Industrial HMI Controllers | Network Packet Processors |
|---|---|
Use Scenario: Human-machine interface in factory automation panels operating continuously at ambient temperatures up to 105°C. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoCs running real-time Linux, buffering display frame buffers and I/O transaction queues. Use Value: The –40°C to +105°C rating and DDR3L-1600 bandwidth ensure deterministic response time and zero data loss without thermal throttling or refresh-induced latency spikes. |
Use Scenario: Layer-3 forwarding engine in carrier-grade Ethernet switches handling 10 Gbps line-rate traffic. IC Role / Device Role / Timing Role: High-throughput packet buffer memory interfaced to multi-core NPU with dual-channel DDR3L controller. Use Value: 8-bank concurrency and programmable CAS Latency (CL=11) enable sustained 12.8 GB/s read/write bandwidth while minimizing tRC penalties during random access. |
| Medical Imaging Subsystems | Automotive ADAS Domain Controllers |
Use Scenario: Ultrasound beamforming module requiring low-noise, high-reliability memory for real-time echo data processing. IC Role / Device Role / Timing Role: Coherent memory for FPGA-based DSP pipeline, synchronized to 1600 MT/s clock with sub-nanosecond DQS-DQ alignment. Use Value: DLL-aligned DQS and write leveling support ensure <15 ps jitter on DQ edges, meeting medical-grade signal fidelity requirements for diagnostic accuracy. |
Use Scenario: Central ADAS domain controller aggregating camera, radar, and ultrasonic sensor data in autonomous driving ECUs. IC Role / Device Role / Timing Role: Safety-critical working memory for ISO 26262 ASIL-B compliant SoC, storing sensor fusion outputs and motion planning state vectors. Use Value: Asynchronous RESET# and PASR allow fail-safe initialization and selective memory retention during power transients, supporting ASIL-B fault containment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A (Micron) | Same density (2 Gb), VFBGA 78-ball, DDR3L-1600, but rated –40°C to +95°C (not +105°C); tREFI = 7.8 µs at 85°C, no extended-temp ASR mode. | Suitable for commercial/industrial systems where ambient does not exceed 95°C; lacks certified operation at 105°C case temperature. | Select W632GU8MB12J when full 105°C case operation with guaranteed tREFI = 3.9 µs and ASR/PASR is required. |
| IS43TR16256B-125KBL (ISSI) | 16-bit bus width (vs. 8-bit), same DDR3L-1600 speed and –40°C to +105°C rating, but 96-ball FBGA package and different ball map. | Requires PCB redesign due to wider bus and incompatible pinout; better suited for designs needing higher per-cycle bandwidth over pin count efficiency. | Choose W632GU8MB12J for 8-bit interface constraint, space-constrained layouts, or drop-in replacement in existing 78-ball DDR3L-1600 designs. |
Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GU8MB12J uniquely combines 8-bit bus width, 78-ball VFBGA footprint, and guaranteed +105°C case operation with DDR3L-1600 timing - making it optimal for thermally dense embedded systems where board area and thermal headroom are both constrained.
Availability
W632GU8MB12J is available at Aetrix Electronics and suitable for industrial HMI controllers, network packet processors, medical imaging subsystems, and automotive ADAS domain controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8MB12J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GU8MB series is part of Winbond's industrial DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity in space- and power-constrained embedded systems.
FAQ
What is the maximum operating temperature specification for W632GU8MB12J?
The W632GU8MB12J is qualified for –40°C to +105°C case temperature operation. At TCASE > 95°C, it requires either Manual Self-Refresh with Extended Temperature Range enabled (MR2 A6 = 0b, A7 = 1b) or Auto Self-Refresh (ASR) mode (MR2 A6 = 1b) to maintain data retention, with tREFI reduced to 3.9 µs to compensate for accelerated leakage.
Does W632GU8MB12J support backward compatibility with standard 1.5 V DDR3 systems?
Yes, W632GU8MB12J supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is fully backward compatible with 1.5 V ± 0.075 V DDR3 systems. VDD/VDDQ must be set to the same voltage level; mixing 1.35 V and 1.5 V is not supported. All timing parameters remain compliant under both supply conditions.
How is on-die termination configured on W632GU8MB12J?
W632GU8MB12J supports programmable ODT via Mode Register MR1. Static termination (Rtt_Nom) values of 60 Ω, 120 Ω, or 240 Ω are selected using RTT_PU/RTT_PD bits. Dynamic ODT (Rtt_WR) offers 60 Ω or 120 Ω during WRITE bursts only, activated by ODT pin assertion and controlled by MR2. Both modes require ZQ calibration for accuracy.
What is the purpose of the Multi-Purpose Register (MPR) in W632GU8MB12J?
The MPR in W632GU8MB12J stores a fixed 8-bit pattern (0x00) readable via standard READ commands. It is used for system-level timing margin testing, eye diagram analysis, and write leveling calibration - allowing host controllers to verify DQS-DQ alignment and signal integrity without accessing actual memory contents.
Can W632GU8MB12J operate at DDR3L-1866 or DDR3L-2133 speeds?
No. W632GU8MB12J is a fixed-speed-grade part qualified only for DDR3L-1600 (11-11-11) operation. While the base W632GU8MB family includes -11J and -09J variants for 1866 MT/s and 2133 MT/s, the -12J suffix explicitly denotes DDR3L-1600 timing compliance, and its internal timing parameters (e.g., tAA min = 13.75 ns) do not meet stricter 1866/2133 requirements.
W632GU8MB12J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8MB12J FAQ
1.How can I place an order for W632GU8MB12J through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8MB12J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8MB12J reliable?
The price and inventory of W632GU8MB12J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8MB12J is usually 5 days.
3.What payment methods are accepted for W632GU8MB12J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8MB12J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8MB12J?
W632GU8MB12J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8MB12J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8MB12J?
For technical support, including W632GU8MB12J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8MB12J requirements.
6.How does Aetrix verify that W632GU8MB12J is sourced from the original manufacturer or authorized distributors?
All W632GU8MB12J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8MB12J meets industry standards.
7.What is the process for return or replacement of W632GU8MB12J?
All W632GU8MB12J units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8MB12J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8MB12J part is unused and in its original packaging.
Return procedure for W632GU8MB12J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8MB12J Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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Microchip Technology
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M24C02-FMC6TG
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93LC46BT-I/OT
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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