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Winbond Electronics Corporation W632GU8MB-15
- Part No.:
- W632GU8MB-15
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8MB-15.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W632GU8MB-15 from Winbond is a 2G-bit DDR3L SDRAM organized as 32M words × 8 banks × 8 bits, operating at 1.35V nominal supply with DDR3L-1333 speed grade (9-9-9 CL-tRCD-tRP), supporting industrial temperature range (0°C to 95°C), and delivering 1333 MT/s data rates for memory subsystems in embedded computing and networking equipment.
For engineers reviewing the W632GU8MB-15 datasheet, W632GU8MB-15 pinout, W632GU8MB-15 application, or W632GU8MB-15 equivalent, this page provides verified DDR3L timing parameters, ball configuration, ODT control modes, ZQ calibration support, and JEDEC-compliant power-down and self-refresh behavior specific to the -15 speed bin.
Technical Context
The W632GU8MB-15 implements an 8-bank, 8-bit prefetch DDR3L architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write transfers. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
It features asynchronous RESET#, on-die termination (ODT) with static and dynamic modes (Rtt_WR), ZQ calibration using external 240Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DDR3L interface margin optimization - all compliant with JEDEC JESD79-3F for DDR3L-1333 operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits), enabling 256 MB of byte-addressable memory per device |
| Data Rate | 1333 MT/s (DDR3L-1333), requiring 667 MHz clock frequency with tCK(AVG) = 1.5 ns min for CL=9/CWL=7 |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V ± 0.075 V DDR3 systems |
| Timing Parameters | CL-tRCD-tRP = 9-9-9 (ns), tAA = 13.5 ns min, tRC = 49.5 ns min, supporting stable burst reads/writes under JEDEC conditions |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C, with full AC/DC specification compliance and doubled refresh rate (tREFI = 3.9 µs) above 85°C |
| Power Management | Supports Precharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self Refresh (PASR) |
| Interface Features | Differential CK/CK#, bi-directional DQS/DQS#, programmable ODT (Rtt_NOM = 60/120/240 Ω), ZQ calibration, and MPR-based timing calibration |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free), with 78-ball array arranged in 8×10.5 mm window BGA footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits for bank and memory location selection; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent access |
| CK, CK# | Differential Clock | Edge-triggered command latch reference; inputs sampled at crosspoint (CK↑ / CK#↓) |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low command decode lines defining ACT, READ, WRITE, PRE, REF, etc. |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence and resets internal state machines |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; edge-aligned on reads, center-aligned on writes |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; aligned with DQ for timing margin optimization |
| DM | Data Mask | Per-byte write mask controlling which DQ bits are written during burst operations |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors on DQ/DQS/DM lines per MR1/MR2 settings |
| VDD, VDDQ, VSS | Power/Ground | Separate core (VDD) and I/O (VDDQ) supplies; VSS pins provide low-inductance return paths |
| ZQ | ZQ Calibration Reference | Connects to external 240Ω ±1% resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 5–10 supported; enables timing optimization across varying clock frequencies and system load conditions |
| Dynamic ODT (Rtt_WR) | Termination impedance applied only during write bursts, improving signal integrity without affecting read eye margins |
| ZQ Calibration | One-time or periodic calibration using external 240Ω resistor ensures ±10% output driver and ODT impedance accuracy over voltage/temperature |
| Write Leveling Support | Enables controller-driven DQS-to-CK skew compensation, critical for reliable 1333 MT/s write setup/hold timing |
| Multi-Purpose Register (MPR) | Provides predefined read pattern for system-level timing calibration, eliminating need for external test patterns |
| Temperature-Extended Refresh | Automatic doubling of refresh rate (tREFI = 3.9 µs) above 85°C ensures data retention without host intervention |
Applications
| Industrial PLC Memory Buffer | Network Router Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with local data caching in programmable logic controllers. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O status buffering, interfaced via DDR3L controller with AL=0 and CL=9. Use Value: 1333 MT/s bandwidth and low-latency tRCD/tRP (9 ns) enable sub-millisecond response to fieldbus interrupts while maintaining thermal stability up to 95°C. | Use Scenario: High-throughput packet buffering in Layer 3 enterprise routers handling 10 Gbps line-rate traffic. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple ASIC engines, utilizing burst reads/writes and auto-precharge. Use Value: 8-bank concurrency and 1K-byte page size allow parallel packet queue management with minimal row activation overhead. |
| Medical Imaging Display Controller | Automotive ADAS Video Preprocessor |
Use Scenario: Frame buffering for high-resolution DICOM display subsystems in diagnostic ultrasound and MRI consoles. IC Role / Device Role / Timing Role: Dual-port frame store synchronized to display engine and image acquisition pipeline using separate DQS groups. Use Value: Differential DQS/DQS# and write leveling ensure pixel-perfect timing alignment across 1920×1080@60Hz video streams with zero dropped frames. | Use Scenario: On-camera preprocessing of raw sensor data before transmission to central domain controller in Level 2+ ADAS systems. IC Role / Device Role / Timing Role: Low-power image buffer supporting burst-intensive Bayer-to-YUV conversion with ASR mode during vehicle idle states. Use Value: DDR3L-1333 speed combined with Self-Refresh current of 11 mA allows >12-hour parking-mode operation without battery drain. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same density (2Gb), 125-ball FBGA, DDR3L-1600 (11-11-11), CL=11, higher speed but wider package | Requires PCB redesign due to different ball count and layout; suited for new designs targeting higher bandwidth | Select when migrating to 1600 MT/s and board space permits larger footprint |
| IS43TR16256B-15KBL | 16-bit bus width (vs. 8-bit), same DDR3L-1333 speed, 96-ball FBGA, supports CL=9 but lacks PASR and ASR | Not drop-in compatible; requires bus-width adaptation and loses extended-temperature refresh capability | Choose only if 16-bit interface is available and thermal refresh extension is not required |
Compared with MT41K256M8DA-125:A and IS43TR16256B-15KBL, the W632GU8MB-15 offers optimal balance of JEDEC-compliant DDR3L-1333 performance, 78-ball compact packaging, full temperature-extended refresh support, and integrated write leveling - making it ideal for cost- and space-constrained industrial upgrades.
Availability
W632GU8MB-15 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and JEDEC DDR3L compliance.
Supply support for W632GU8MB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GU8MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for energy-efficient, thermally robust memory subsystems in fanless embedded systems and extended-temperature networking equipment.
FAQ
What is the maximum operating frequency supported by the W632GU8MB-15?
The W632GU8MB-15 supports DDR3L-1333 operation at 667 MHz clock frequency (1333 MT/s data rate), with tCK(AVG) minimum of 1.5 ns for CL=9/CWL=7 configurations. Its fCKMAX is 667 MHz under JEDEC-specified conditions, and it does not support higher-speed bins such as DDR3L-1600 or DDR3L-1866.
Does the W632GU8MB-15 support both 1.35V and 1.5V supply voltages?
Yes, the W632GU8MB-15 operates at 1.35V nominal (VDD/VDDQ = 1.283 V to 1.45 V) for DDR3L compliance and is backward compatible with standard DDR3 1.5V ± 0.075V systems. Voltage switching between modes is supported per JEDEC specification, but must be coordinated with proper initialization and mode register programming.
What package type and ball count does the W632GU8MB-15 use?
The W632GU8MB-15 uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm thickness, featuring a window BGA construction and RoHS-compliant lead-free finish. It has 78 solder balls arranged in a defined grid per JEDEC MO-245, matching the pinout documented in Section 5 of the datasheet.
How does the W632GU8MB-15 handle refresh at elevated temperatures?
At case temperatures above 85°C, the W632GU8MB-15 automatically doubles its refresh rate to tREFI = 3.9 µS (versus 7.8 µS at ≤85°C), ensuring data retention integrity. This is achieved either via Auto Self-Refresh (ASR) enabled through MR2 or Manual Self-Refresh with extended temperature range mode (MR2 A6=0, A7=1).
Is write leveling supported on the W632GU8MB-15, and how is it implemented?
Yes, write leveling is fully supported on the W632GU8MB-15. It is implemented via dedicated DRAM-side logic that adjusts DQS-to-CK delay in response to controller-initiated commands, using the MPR to output calibration patterns. This feature is essential for achieving reliable 1333 MT/s write timing margins in real-world PCB layouts.
W632GU8MB-15 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8MB-15 FAQ
1.How can I place an order for W632GU8MB-15 through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8MB-15 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8MB-15 reliable?
The price and inventory of W632GU8MB-15 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8MB-15 is usually 5 days.
3.What payment methods are accepted for W632GU8MB-15?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8MB-15 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8MB-15?
W632GU8MB-15 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8MB-15 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8MB-15?
For technical support, including W632GU8MB-15 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8MB-15 requirements.
6.How does Aetrix verify that W632GU8MB-15 is sourced from the original manufacturer or authorized distributors?
All W632GU8MB-15 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8MB-15 meets industry standards.
7.What is the process for return or replacement of W632GU8MB-15?
All W632GU8MB-15 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8MB-15, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8MB-15 part is unused and in its original packaging.
Return procedure for W632GU8MB-15:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8MB-15 Tags
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