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Winbond Electronics Corporation W632GU8MB15I

Part No.:
W632GU8MB15I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW632GU8MB15I.pdf
Description:
IC DRAM 2GBIT PAR 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,732

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Product details

Overview

W632GU8MB15I from Winbond is a 2G-bit DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1333 speed (667 MHz clock, 9-9-9 timing), rated for -40°C to +95°C industrial temperature range, and packaged in 78-ball VFBGA (8 mm × 10.5 mm). It serves as main system memory in embedded controllers, network edge devices, and industrial HMIs requiring low-voltage, high-density DRAM with robust thermal reliability.

For engineers reviewing the W632GU8MB15I datasheet, W632GU8MB15I pinout, W632GU8MB15I application, or W632GU8MB15I equivalent, this page delivers verified electrical specs, ball mapping, JEDEC-compliant DDR3L-1333 timing parameters, industrial-grade thermal validation, and direct alternative part comparisons - all confirmed against Winbond's official A02 revision documentation.

Technical Context

The W632GU8MB15I implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQS/DQS# strobes supporting both edge-aligned reads and center-aligned writes. It supports programmable CAS Latency (CL = 5–10) and CAS Write Latency (CWL = 5–7), with additive latency (AL = 0, CL−1, CL−2) enabling posted CAS for improved bus efficiency.

It features on-die termination (ODT) with static and dynamic modes (Rtt_WR), ZQ calibration using external 240 Ω resistor, asynchronous RESET# for power-up initialization, and multi-purpose register (MPR) support for system-level timing calibration via write leveling - all compliant with JEDEC DDR3L standard JESD79-3F.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gbit (32M words × 8 banks × 8 bits)
Data Width8-bit bidirectional I/O interface
Speed GradeDDR3L-1333 (667 MHz clock, tCK = 1.5 ns min)
Timing (CL-nRCD-nRP)9-9-9 at 667 MHz; supports CL=5–10, CWL=5–7
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V
Operating Temp-40°C ≤ TCASE ≤ +95°C (industrial grade)
PackageVFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free)

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type construction. Ball pitch: 0.8 mm. Compatible with standard DDR3L layout rules including controlled-impedance routing for CK/CK#, DQS/DQS#, and address/command nets.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address InputsRow/column/bank address during ACT, READ, WRITE, PRE commands; multiplexed with MRS address
BA0–BA2Bank AddressSelects one of eight internal banks for concurrent operation
CK / CK#Differential ClockEdge-sensitive input pair; all commands latched at CK rising / CK# falling crossing point
DQ0–DQ7Data I/O8-bit bidirectional data bus; double-data-rate transfers referenced to DQS/DQS# edges
DQS / DQS#Differential StrobeSource-synchronous strobe; edge-aligned with read data, center-aligned with write data
DMData MaskPer-byte write mask; active-high, sampled on DQS rising edge
RESET#Asynchronous ResetActive-low signal initiating power-up initialization sequence and mode register reset
ODTOn-Die Termination ControlDynamic enable/disable of termination resistors on DQ/DQS/DM lines per MR1/MR2 settings
WE#, RAS#, CAS#Command InputsStandard DDR3 command pins defining READ, WRITE, ACT, PRE, REF, MRS operations
VDD / VDDQPower SuppliesVDD = core voltage; VDDQ = I/O voltage; both 1.35 V nominal, decoupled separately
VSSGroundSignal and power ground planes required for noise suppression and signal integrity

Key Features

FeatureDesign Value
Programmable CAS Write Latency (CWL)Supports CWL = 5–7, enabling precise write timing alignment across DDR3L-1333 frequency and voltage conditions
ZQ CalibrationUses external 240 Ω reference resistor to calibrate output driver impedance and ODT values, ensuring consistent signal integrity across voltage/temperature
Dynamic ODT (Rtt_WR)Enables on-the-fly ODT activation during WRITE bursts only, reducing standby power while maintaining write signal fidelity
Multi-Purpose Register (MPR)Provides predefined calibration bit pattern for system-level timing margin verification without disturbing memory contents
Partial Array Self Refresh (PASR)Reduces self-refresh current by refreshing only active banks, extending battery life in portable industrial applications

Applications

Industrial HMI MemoryNetwork Edge Router Buffer

Use Scenario: Human-machine interface in factory automation panels requiring persistent, low-power memory for GUI frame buffers and real-time status logging.

IC Role / Device Role / Timing Role: Primary system DRAM providing 8-bit wide, burst-access storage for display controller and ARM Cortex-A53-based SoC.

Use Value: DDR3L-1333 speed and -40°C to +95°C rating ensure deterministic response under thermal cycling; 1.35 V operation cuts system power by ~15% vs. 1.5 V DDR3.

Use Scenario: Packet buffering in compact 5G small cell gateways where space-constrained PCBs demand high-density, thermally robust memory.

IC Role / Device Role / Timing Role: Shared packet buffer between MAC layer and baseband processor, accessed via AXI bus with burst-length-8 reads/writes.

Use Value: VFBGA-78 footprint enables dense routing; PASR and dynamic ODT reduce average current draw during low-traffic periods.

Embedded Vision ControllerMedical Diagnostic Imaging Module

Use Scenario: Real-time image preprocessing unit in portable ultrasound devices capturing 12-bit grayscale frames at 30 fps.

IC Role / Device Role / Timing Role: Frame buffer memory interfaced to MIPI CSI-2 receiver and ARM Mali GPU, using interleaved burst ordering for sequential pixel access.

Use Value: CL=9 and tRCD=9 ns guarantee sub-15 ns row activation latency; MPR and write leveling support precise timing closure on high-speed traces.

Use Scenario: DICOM image cache in bedside patient monitors requiring certified reliability and extended temperature operation.

IC Role / Device Role / Timing Role: Non-volatile-cached DRAM holding recent X-ray/ECG sequences for rapid recall and annotation.

Use Value: Industrial temperature rating (-40°C to +95°C) meets IEC 60601-1 ambient requirements; 1.35 V supply simplifies DC-DC design and reduces heat generation near sensitive analog circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M8RH-125:E1 Gbit density (128M × 8), DDR3L-1600 (800 MHz), 96-ball FBGA, supports CL=11 only at 1600 MT/sLower density and higher speed; requires board redesign for 96-ball footprint and tighter timing marginsSelect when higher bandwidth is critical and system can accommodate reduced capacity and different package
IS43TR16128B-125KBL2 Gbit (128M × 16), DDR3L-1600, 96-ball FBGA, 16-bit bus width, CL=11 at 1600 MT/s16-bit interface doubles per-cycle throughput but demands wider data bus and incompatible pinoutChoose for systems needing higher aggregate bandwidth and capable of 16-bit memory controller configuration

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W632GU8MB15I offers exact 2 Gbit × 8-bit density at DDR3L-1333 with industrial temperature support and VFBGA-78 compatibility - making it optimal for cost-sensitive, thermally demanding 8-bit bus designs where timing margin and layout continuity are prioritized over peak bandwidth.

Availability

W632GU8MB15I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, embedded vision controllers, and medical diagnostic imaging modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W632GU8MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU8MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant interoperability with mainstream memory controllers.

FAQ

What is the maximum clock frequency supported by the W632GU8MB15I?

The W632GU8MB15I supports a maximum clock frequency of 667 MHz (DDR3L-1333), corresponding to a minimum clock period (tCK) of 1.5 ns. This speed grade is validated across its full industrial temperature range (-40°C to +95°C) and operates with 9-9-9 timing (CL=9, tRCD=9 ns, tRP=9 ns). The device does not support higher-speed bins such as DDR3L-1600 or DDR3L-1866.

Does the W632GU8MB15I support backward compatibility with standard 1.5 V DDR3 systems?

Yes, the W632GU8MB15I supports backward compatibility with 1.5 V DDR3 systems. Its VDD/VDDQ supply accepts 1.5 V ± 0.075 V (1.425 V to 1.575 V) in addition to the primary 1.35 V nominal DDR3L range (1.283 V to 1.45 V). This allows seamless integration into legacy DDR3 designs without hardware modification, provided timing parameters are adjusted per JEDEC JESD79-3F specification.

What package type and ball count does the W632GU8MB15I use?

The W632GU8MB15I uses a 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 10.5 mm with 1.0 mm height and 0.8 mm ball pitch. It follows Winbond's Window BGA construction and is RoHS-compliant with lead-free solder finish - identical to the W632GU8MB family's standard packaging across all speed grades and temperature variants.

How does the W632GU8MB15I handle refresh at elevated temperatures?

At temperatures above 85°C, the W632GU8MB15I requires doubled auto-refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2[7:6] = 10b or by entering Manual Self-Refresh mode. The -15I speed grade is fully validated for operation up to +95°C with these refresh adjustments applied per JEDEC requirements.

Can the W632GU8MB15I be used with a DDR3 controller configured for CL=7 or CL=9?

Yes, the W632GU8MB15I supports CL=7 and CL=9, though CL=9 is its default and fully characterized setting for DDR3L-1333 operation. For CL=7, tAA/tRCD/tRP minimum must be ≤13.125 ns per JEDEC note; however, CL=7 is optional and not guaranteed across the full -40°C to +95°C range. CL=9 is fully validated and recommended for industrial reliability.

W632GU8MB15I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W632GU8MB15I FAQ

1.How can I place an order for W632GU8MB15I through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8MB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8MB15I reliable?

The price and inventory of W632GU8MB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8MB15I is usually 5 days.

3.What payment methods are accepted for W632GU8MB15I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8MB15I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8MB15I?

W632GU8MB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8MB15I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8MB15I?

For technical support, including W632GU8MB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8MB15I requirements.

6.How does Aetrix verify that W632GU8MB15I is sourced from the original manufacturer or authorized distributors?

All W632GU8MB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8MB15I meets industry standards.

7.What is the process for return or replacement of W632GU8MB15I?

All W632GU8MB15I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8MB15I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8MB15I part is unused and in its original packaging.

Return procedure for W632GU8MB15I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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