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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W632GU8NB-09

Name: W632GU8NB-09
Brand: Winbond Electronics Corporation
SKU: W632GU8NB-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GU8NB-09

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 78-VFBGA

Datasheet:: W632GU8NB-09.pdf

Description:: IC DRAM 2GBIT PAR 78VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W632GU8NB-09 from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), supporting CAS Latency 14 and CWL 10, and designed for high-bandwidth memory subsystems in industrial computing, network edge devices, and embedded controllers requiring low-voltage operation and extended temperature stability.

For engineers reviewing the W632GU8NB-09 datasheet, W632GU8NB-09 pinout, W632GU8NB-09 application, or W632GU8NB-09 equivalent, this page delivers verified DDR3L timing parameters, ball configuration, ODT and ZQ calibration behavior, power-down modes, and JEDEC-compliant thermal specifications for -09 speed grade at 0°C to 95°C case temperature.

Technical Context

The W632GU8NB-09 implements an 8-bank, 8-bit prefetch DDR3L architecture with differential CK/CK# clock inputs and bidirectional DQS/DQS# strobes, supporting posted CAS, programmable additive latency (AL = 0, CL−1, CL−2), and dynamic on-die termination (Rtt_WR). Its DLL aligns DQ and DQS transitions to CK edges for precise source-synchronous timing.

It supports full JEDEC DDR3L-2133 compliance including ZQ calibration using external 240 Ω reference resistor, write leveling for per-lane skew compensation, multi-purpose register (MPR) readout for system-level timing calibration, and asynchronous RESET# for deterministic power-up initialization - all within a VFBGA78 (8 mm × 10.5 mm, 1.0 mm height) RoHS-compliant package.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - enables compact 256 MB memory modules without stacking.
Data Rate	2133 MT/s (DDR3L-2133), tCK(AVG) = 0.938–1.07 ns - supports high-throughput interfaces in SoC-based systems.
CAS Latency	CL = 14 (at DDR3L-2133), tAA = 13.09 ns - defines minimum read access delay from ACT to first valid data.
Supply Voltage	VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical), backward-compatible to 1.5 V ± 75 mV - allows flexible voltage rail design and legacy DDR3 interoperability.
Operating Temperature	0°C ≤ TCASE ≤ 95°C - validated for industrial-grade reliability without derating in fanless or thermally constrained enclosures.
Refresh Interval	tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) - requires doubled refresh rate above 85°C to maintain data retention integrity.
Package	VFBGA78 (8 mm × 10.5 mm, 1.0 mm height, 0.8 mm ball pitch) - surface-mount compatible with standard PCB reflow profiles and IPC-7351B land patterns.

Pinout & Package

VFBGA78 package with 78 solder balls arranged in 8×10.5 mm² footprint (ball pitch: 0.8 mm), RoHS-compliant, lead-free, window-type BGA construction optimized for signal integrity and thermal dissipation in dense memory layouts.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row/column address bits for bank and memory location selection; A10 controls auto-precharge.
BA0–BA2	Bank Address	Selects one of eight internal banks for concurrent operation and interleaved access.
CK / CK#	Differential Clock	Edge-triggered command latch point; all commands sampled at CK rising / CK# falling crossing.
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS# edges.
DQS / DQS#	Differential Strobe	Source-synchronous strobe: center-aligned with write data, edge-aligned with read data.
DM	Data Mask	Per-byte write mask enabling selective byte masking during burst writes without full bus turnaround.
RESET#	Asynchronous Reset	Active-low signal initiating power-up initialization sequence and clearing internal state independent of clock.
ODT	On-Die Termination Control	Dynamic enable/disable of programmable termination resistors (Rtt_NOM, Rtt_WR) on DQ/DQS/DM lines.
VDD / VDDQ	Power Supply	Separate 1.35 V core (VDD) and I/O (VDDQ) rails; decoupling required per JEDEC DDR3L layout guidelines.
VSS	Ground	Signal and power ground planes must be contiguous and low-inductance to meet AC noise margins.

Key Features

Feature	Design Value
ZQ Calibration	One-time or periodic calibration of output driver strength and ODT impedance using external 240 Ω resistor to ground - ensures consistent signal integrity across voltage/temperature.
Write Leveling	Per-lane DQS-to-CK skew adjustment via MRS-controlled training mode - eliminates setup/hold violations in high-speed write capture paths.
Dynamic ODT (Rtt_WR)	Programmable termination activation only during write operations - reduces standby power and improves write eye margin without affecting read termination.
Multi-Purpose Register (MPR)	Predefined 128-bit pattern readable via special MRS command - used for system-level timing margin verification and board-level signal integrity validation.
Partial Array Self-Refresh (PASR)	Configurable self-refresh of selected banks only - cuts IDD6 current by up to 50% when full memory array is not required active.
Posted CAS with AL	Additive Latency (AL = 0, CL−1, CL−2) decouples command bus utilization from data return timing - increases command bandwidth efficiency in burst-heavy workloads.

Applications

Industrial HMI Controllers	Network Edge Routers
Use Scenario: Fanless panel PCs and programmable logic controllers running real-time OS with GUI rendering and protocol stacks. IC Role / Device Role / Timing Role: Primary system memory buffer for CPU instruction/data cache coherency and frame buffer storage. Use Value: DDR3L-2133 bandwidth meets 1080p video overlay and dual Ethernet packet buffering requirements while staying within 1.35 V power envelope.	Use Scenario: Compact Layer 3 switches handling 1 GbE line-rate forwarding with deep packet inspection. IC Role / Device Role / Timing Role: Packet buffer memory interfacing directly to switch fabric ASIC with source-synchronous DQS timing. Use Value: Dynamic ODT and write leveling ensure reliable 2133 MT/s writes under variable temperature and voltage conditions across multiple PHY lanes.
Medical Imaging Gateways	Automated Test Equipment (ATE)
Use Scenario: DICOM image preprocessing units aggregating ultrasound or X-ray sensor streams before cloud upload. IC Role / Device Role / Timing Role: High-throughput frame store supporting burst reads/writes between FPGA-accelerated processing blocks. Use Value: 8-bank concurrency and 1K-byte page size enable overlapping memory accesses to sustain >1.6 GB/s effective bandwidth.	Use Scenario: Modular PXI chassis performing high-speed digital pattern generation and acquisition at 500+ MHz sampling rates. IC Role / Device Role / Timing Role: On-board memory for waveform storage and real-time comparison logic with deterministic latency. Use Value: Asynchronous RESET# and guaranteed tRAS/tRC timing allow predictable boot and test sequence synchronization across temperature extremes.

Industrial HMI Controllers

Network Edge Routers

Use Scenario: Fanless panel PCs and programmable logic controllers running real-time OS with GUI rendering and protocol stacks.

IC Role / Device Role / Timing Role: Primary system memory buffer for CPU instruction/data cache coherency and frame buffer storage.

Use Value: DDR3L-2133 bandwidth meets 1080p video overlay and dual Ethernet packet buffering requirements while staying within 1.35 V power envelope.

Use Scenario: Compact Layer 3 switches handling 1 GbE line-rate forwarding with deep packet inspection.

IC Role / Device Role / Timing Role: Packet buffer memory interfacing directly to switch fabric ASIC with source-synchronous DQS timing.

Use Value: Dynamic ODT and write leveling ensure reliable 2133 MT/s writes under variable temperature and voltage conditions across multiple PHY lanes.

Medical Imaging Gateways

Automated Test Equipment (ATE)

Use Scenario: DICOM image preprocessing units aggregating ultrasound or X-ray sensor streams before cloud upload.

IC Role / Device Role / Timing Role: High-throughput frame store supporting burst reads/writes between FPGA-accelerated processing blocks.

Use Value: 8-bank concurrency and 1K-byte page size enable overlapping memory accesses to sustain >1.6 GB/s effective bandwidth.

Use Scenario: Modular PXI chassis performing high-speed digital pattern generation and acquisition at 500+ MHz sampling rates.

IC Role / Device Role / Timing Role: On-board memory for waveform storage and real-time comparison logic with deterministic latency.

Use Value: Asynchronous RESET# and guaranteed tRAS/tRC timing allow predictable boot and test sequence synchronization across temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M8DA-125:A	2 Gb DDR3L, 125-ball FBGA, DDR3L-1600 (11-11-11), CL=11, operates at 1.283–1.45 V but rated only to 90°C case temp.	Limited to lower data rate and narrower temperature range; lacks PASR and extended 105°C variants.	Choose for cost-sensitive designs where 1600 MT/s suffices and thermal margin is ≥5°C below 95°C.
IS43TR16256B-125KBL	2 Gb DDR3L, 96-ball FBGA, DDR3L-1600 (11-11-11), CL=11, supports 0°C–95°C but no industrial-plus (105°C) variant.	No write leveling support, no MPR, and no dynamic ODT - limits signal integrity tuning in high-speed layouts.	Choose for simpler controller implementations lacking DDR3L training features, where layout constraints favor 96-ball footprint.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W632GU8NB-09 delivers higher bandwidth (2133 vs. 1600 MT/s), broader temperature coverage (up to 95°C case), and advanced calibration features (write leveling, MPR, dynamic ODT) essential for robust operation in thermally demanding embedded systems.

Availability

W632GU8NB-09 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and guaranteed DDR3L-2133 performance at 0°C to 95°C.

Supply support for W632GU8NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM products for industrial, automotive, and communications markets.

The W632GU8NB-09 belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability memory subsystems in space-constrained and thermally challenging embedded applications.

FAQ

What is the maximum supported data rate for W632GU8NB-09?

The W632GU8NB-09 is rated for DDR3L-2133 operation, delivering 2133 MT/s with CL=14 and tCK(AVG) = 0.938–1.07 ns. This speed grade is validated across its full 0°C to 95°C case temperature range and requires compliant controller timing parameters including tRCD=14 ns, tRP=14 ns, and tRC=46 ns.

Does W632GU8NB-09 support both DDR3L and standard DDR3 voltage levels?

Yes, W632GU8NB-09 supports dual-voltage operation: it functions at 1.35 V nominal (1.283–1.45 V) for DDR3L mode and is backward-compatible with 1.5 V ± 75 mV for legacy DDR3 systems. Voltage switching must follow JEDEC-specified sequencing and stabilization timing before initialization.

How does the W632GU8NB-09 handle thermal derating above 85°C?

Above 85°C case temperature, the W632GU8NB-09 requires doubling the refresh frequency (tREFI reduced from 7.8 µs to 3.9 µs) to maintain data retention. This is automatically triggered when MR2[7:6] = 10b (Auto Self-Refresh enabled), and applies up to its 95°C upper limit.

What calibration features are implemented in W632GU8NB-09 for high-speed signal integrity?

The W632GU8NB-09 includes ZQ calibration for output driver and ODT impedance tuning, write leveling for per-lane DQS-to-CK skew correction, and Multi-Purpose Register (MPR) readout for system-level timing margin validation - all essential for stable 2133 MT/s operation in production hardware.

Is W632GU8NB-09 pin-compatible with other Winbond DDR3L parts like W632GU8NB-11 or W632GU8NB-12?

Yes, all W632GU8NB speed grades share identical VFBGA78 pinout, ball assignment, and functional interface. The -09, -11, -12, and -15 variants differ only in speed bin, timing parameters, and temperature grading - enabling drop-in replacement within the same PCB layout when controller firmware supports the target CL/CWL settings.

W632GU8NB-09 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 78-VFBGA

Packaging:: Tray

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3L

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: Parallel

Clock Frequency:: 1.067 GHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.283V ~ 1.45V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 78-VFBGA (8x10.5)

W632GU8NB-09 FAQ

1.How can I place an order for W632GU8NB-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8NB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8NB-09 reliable?

The price and inventory of W632GU8NB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB-09 is usually 5 days.

3.What payment methods are accepted for W632GU8NB-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8NB-09?

W632GU8NB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8NB-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8NB-09?

For technical support, including W632GU8NB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB-09 requirements.

6.How does Aetrix verify that W632GU8NB-09 is sourced from the original manufacturer or authorized distributors?

All W632GU8NB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB-09 meets industry standards.

7.What is the process for return or replacement of W632GU8NB-09?

All W632GU8NB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8NB-09 part is unused and in its original packaging.

Return procedure for W632GU8NB-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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