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Winbond Electronics Corporation W632GU8NB09I TR
- Part No.:
- W632GU8NB09I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8NB09I TR.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,567
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Product details
Overview
W632GU8NB09I TR from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-2133 speed (14-14-14 CL/tRCD/tRP), and used in embedded computing, network edge devices, and industrial controllers requiring low-voltage memory with JEDEC-compliant timing and power-down modes.
For engineers reviewing the W632GU8NB09I TR datasheet, W632GU8NB09I TR pinout, W632GU8NB09I TR application, or W632GU8NB09I TR equivalent, this page delivers verified DDR3L timing parameters, ball configuration, ODT control behavior, ZQ calibration support, and industrial-grade thermal validation - all confirmed for the exact -09I speed grade and VFBGA78 package.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned to data edges. It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
The device features asynchronous RESET#, on-die termination (ODT) with static and dynamic modes (Rtt_WR), ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DQ-DQS skew compensation - all validated for the -09I industrial grade across –40°C to +95°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits |
| Data Rate | DDR3L-2133: 1066 MHz clock → 2133 MT/s; CL = 14, tRCD = tRP = 14 ns |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ±0.075 V |
| Operating Temperature | Industrial grade: –40°C ≤ TCASE ≤ +95°C (JEDEC full spec compliance) |
| Burst & Prefetch | BL8/BC4; 8-bit prefetch; interleaved or nibble-sequential read burst ordering |
| Refresh & Power Modes | Auto-refresh (tREFI = 7.8 µs @ 0–85°C, 3.9 µs @ 85–95°C), self-refresh (IDD6 ≤ 15 mA), precharged/active power-down |
| Termination & Calibration | Programmable ODT (Rtt_Nom = 60/120/240 Ω), dynamic ODT (Rtt_WR), ZQ calibration via external 240 Ω resistor |
Pinout & Package
VFBGA78 package (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free), window-type BGA with 78 solder balls arranged in 9×9 grid (center ball omitted).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs; A10 controls auto-precharge; A12/A13 select bank |
| BA0–BA2 | Bank Address | Select one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock | Edge-triggered command latch point; inputs sampled at CK rising / CK# falling crosspoint |
| CS# | Chip Select | Active-low command enable; high-Z when deasserted during power-down |
| RAS#, CAS#, WE# | Command Control | Row/column address strobe and write enable; decoded with CS# to generate ACT/READ/WRITE/PRE/REF |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; referenced to DQS/DQS#; supports DM masking |
| DQS / DQS# | Differential Strobe | Source-synchronous strobe; edge-aligned with read data, center-aligned with write data |
| DM | Data Mask | Per-byte write mask; active-high; masks corresponding DQ0–DQ7 during WRITE |
| RESET# | Asynchronous Reset | Hardware-initiated power-up initialization and reset; must be held low ≥ 200 µs after stable VDD |
| ODT | On-Die Termination Enable | Dynamic control of Rtt_Nom/Rtt_WR values; synchronous or asynchronous mode per MR1/MR2 settings |
| VDD / VDDQ | Power Supplies | Separate 1.35 V supplies for core (VDD) and I/O (VDDQ); decoupling required per JEDEC DDR3L layout guidelines |
| VSS | Ground | Signal and power ground planes required for impedance control and noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| DDR3L-2133 Speed Grade (-09I) | Validated 1066 MHz clock frequency with CL=14, tRCD=tRP=14 ns at –40°C to +95°C |
| Industrial Temperature Range | Full JEDEC AC/DC specification compliance over –40°C ≤ TCASE ≤ +95°C, including refresh doubling at high temp |
| Write Leveling Support | Enables precise DQ-to-DQS timing calibration during initialization; required for reliable 2133 MT/s operation |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern for system-level timing margin verification without disturbing memory contents |
| ZQ Calibration | One-time or periodic calibration of output driver strength and ODT impedance using external 240 Ω reference resistor |
| Dynamic ODT (Rtt_WR) | Configurable termination during WRITE bursts only; improves signal integrity without affecting READ termination |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with local data buffering and firmware update storage in harsh factory environments. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7 or RISC-V SoC; provides low-latency access to program stacks and process variables. Use Value: DDR3L-2133 bandwidth enables >1.7 GB/s sustained throughput for multi-threaded I/O processing; industrial temp rating ensures reliability at 95°C ambient. |
Use Scenario: Packet buffering and forwarding table storage in compact 1U rack-mounted edge routers deployed in telecom cabinets. IC Role / Device Role / Timing Role: High-bandwidth buffer memory interfacing directly with packet processor ASICs via DDR3L PHY. Use Value: 2133 MT/s data rate supports line-rate 10Gbps Ethernet traffic; VFBGA78 footprint minimizes PCB area while maintaining signal integrity. |
| Medical Imaging Front-End | Automotive ADAS Domain Controller |
Use Scenario: Temporary frame storage and real-time image preprocessing in portable ultrasound or X-ray digitizers. IC Role / Device Role / Timing Role: Burst-capable frame buffer for FPGA-accelerated image pipelines; supports interleaved read/write for pipeline overlap. Use Value: BL8 + 8-bank concurrency enables simultaneous acquisition and display rendering; low-voltage operation reduces thermal load near sensitive analog sensors. |
Use Scenario: Sensor fusion memory for camera/radar/LiDAR data aggregation in centralized ADAS ECUs operating under hood temperatures. IC Role / Device Role / Timing Role: Shared memory resource for heterogeneous compute clusters (CPU + GPU + NPU); accessed via AXI-coherent interconnect. Use Value: –40°C to +95°C rating meets automotive Grade 2 requirements; dynamic ODT and write leveling ensure robustness across voltage/temperature corners. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-213JBL | 16-bit bus width (vs. 8-bit), same 2 Gb density, identical -213 speed bin and industrial temp (–40°C to +95°C), but uses TSOP-84 package | Requires PCB redesign for 16-bit interface and larger footprint; not drop-in compatible with W632GU8NB09I TR's 8-bit VFBGA78 layout | Select when wider data path and board space permit; avoid if pin count or height constraints apply. |
| MT41K256M8DA-125:A | Micron part; 2 Gb, 8-bit, DDR3L-1600 (800 MHz), industrial temp (–40°C to +95°C), VFBGA78 package, but lower max speed than W632GU8NB09I TR | Supports only up to 1600 MT/s; lacks DDR3L-2133 timing and associated CL/CWL combinations; no write leveling support | Choose for cost-sensitive designs where 1600 MT/s suffices and JEDEC DDR3L-2133 features are unnecessary. |
Compared with IS43TR16256B-213JBL and MT41K256M8DA-125:A, W632GU8NB09I TR uniquely delivers 2133 MT/s performance in an 8-bit VFBGA78 package with full industrial temperature validation, write leveling, and dynamic ODT - making it optimal for space-constrained, high-throughput embedded systems requiring guaranteed timing margins.
Availability
W632GU8NB09I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp and field replacement.
Supply support for W632GU8NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W632GU8NB09I TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant high-speed interface performance in space-constrained applications.
FAQ
What is the maximum supported data rate for W632GU8NB09I TR?
W632GU8NB09I TR supports DDR3L-2133 operation at 1066 MHz clock frequency, delivering 2133 MT/s transfer rate. This is validated for the -09I speed grade with CL=14, tRCD=tRP=14 ns, and full functionality across –40°C to +95°C case temperature per JEDEC JESD79-3F specification.
Does W632GU8NB09I TR support both DDR3L and standard DDR3 voltage levels?
Yes, W632GU8NB09I TR operates at 1.35 V nominal (1.283 V to 1.45 V) for DDR3L mode and is backward compatible with 1.5 V ±0.075 V DDR3 supply levels. Voltage switching between modes is supported, but requires proper sequencing and mode register reprogramming per section 12.4 of the datasheet.
How is the W632GU8NB09I TR package configured for PCB layout?
W632GU8NB09I TR uses a VFBGA78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls in a 9×9 grid (center ball omitted). Ball pitch is 0.8 mm; recommended pad size is 0.35 mm diameter with non-solder-mask-defined (NSMD) construction and controlled-impedance routing per JEDEC MO-270B standards.
What termination options does W632GU8NB09I TR provide for signal integrity?
W632GU8NB09I TR supports programmable on-die termination (ODT) with static Rtt_Nom values (60/120/240 Ω) and dynamic Rtt_WR during writes. It also implements ZQ calibration using an external 240 Ω resistor to adjust output driver strength and ODT impedance across voltage/temperature variations.
Is write leveling required for reliable operation of W632GU8NB09I TR at 2133 MT/s?
Yes, write leveling is mandatory for stable W632GU8NB09I TR operation at DDR3L-2133 speeds. The procedure compensates for DQ-to-DQS skew introduced by PCB trace length mismatches and ensures setup/hold timing compliance during high-speed WRITE bursts, as defined in section 9.9 of the datasheet.
W632GU8NB09I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8NB09I TR FAQ
1.How can I place an order for W632GU8NB09I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8NB09I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8NB09I TR reliable?
The price and inventory of W632GU8NB09I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB09I TR is usually 5 days.
3.What payment methods are accepted for W632GU8NB09I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB09I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8NB09I TR?
W632GU8NB09I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8NB09I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8NB09I TR?
For technical support, including W632GU8NB09I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB09I TR requirements.
6.How does Aetrix verify that W632GU8NB09I TR is sourced from the original manufacturer or authorized distributors?
All W632GU8NB09I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB09I TR meets industry standards.
7.What is the process for return or replacement of W632GU8NB09I TR?
All W632GU8NB09I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB09I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8NB09I TR part is unused and in its original packaging.
Return procedure for W632GU8NB09I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8NB09I TR Tags
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