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Winbond Electronics Corporation W632GU8NB-09 TR
- Part No.:
- W632GU8NB-09 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8NB-09 TR.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W632GU8NB-09 TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in VFBGA-78 package, operating at 1.35V nominal supply with DDR3L-2133 speed grade (14-14-14 CL/tRCD/tRP), supporting 8 internal banks, 8-bit prefetch, and programmable CAS latency (CL = 5–14) and CAS write latency (CWL = 5–10). It enables high-bandwidth memory subsystems in industrial networking and embedded computing applications requiring low-voltage operation and extended temperature support.
For engineers reviewing the W632GU8NB-09 TR datasheet, W632GU8NB-09 TR pinout, W632GU8NB-09 TR application, or W632GU8NB-09 TR equivalent, this page delivers verified DDR3L timing parameters, ball configuration, ODT control modes, ZQ calibration behavior, and industrial-grade thermal specifications for reliable system integration and JEDEC-compliant layout validation.
Technical Context
This DDR3L SDRAM implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ transitions to clock edges, enabling stable 1066 MHz clock frequency (2133 MT/s data rate) under 1.283–1.45V VDD/VDDQ.
The device supports asynchronous RESET#, programmable mode registers (MR0–MR3), multi-purpose register (MPR) for timing calibration, write leveling, dynamic ODT (Rtt_WR), and partial array self-refresh (PASR). It operates across 0°C ≤ TCASE ≤ 95°C and is backward-compatible with 1.5V DDR3 systems via voltage-switching capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits), organized as 32M × 8 banks × 8 bits |
| Data Rate | 2133 MT/s (DDR3L-2133), fCKMAX = 1066 MHz - defines maximum sustained transfer bandwidth |
| CAS Latency (CL) | Configurable CL = 5–14 (e.g., CL=14 @ DDR3L-2133) - determines read access delay in clock cycles |
| CAS Write Latency (CWL) | Configurable CWL = 5–10 - sets minimum delay between write command and first valid write data |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); supports 1.5 V DDR3 backward compatibility |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C - validated for industrial ambient conditions without derating |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - dictates refresh command scheduling overhead |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type BGA construction. Ball pitch: 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits for bank and memory location selection; A10 controls auto-precharge |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock Inputs | Edge-triggered command latching point; all commands sampled at CK rising / CK# falling crossing |
| CS#, RAS#, CAS#, WE# | Command Control Signals | Active-low chip select and command decode lines defining ACT, READ, WRITE, PRE, REF, etc. |
| RESET# | Asynchronous Reset Input | Initiates power-up initialization sequence and resets internal state machines independently of clock |
| DQ0–DQ7 | Data I/O Lines | Bidirectional 8-bit data bus; referenced to DQS/DQS# for source-synchronous timing |
| DQS, DQS# | Differential Data Strobe | Source-synchronous strobe pair: edge-aligned with read data, center-aligned with write data |
| DM | Data Mask Input | Per-byte write mask controlling which DQ bits are written during burst operations |
| ODT | On-Die Termination Control | Enables/disables programmable termination resistors on DQ, DQS, and DM lines per MR1/MR2 settings |
| VDD, VDDQ | Power Supplies | Separate 1.35 V core (VDD) and I/O (VDDQ) supplies; supports independent voltage switching for DDR3 compatibility |
| VSS | Ground | Signal and power return path; multiple VSS balls ensure low-impedance reference for noise-sensitive I/O |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–10, dynamically matched to operating frequency - ensures optimal write timing margin across speed bins |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω ±1% resistor - corrects output driver and ODT impedance drift over PVT |
| Dynamic ODT (Rtt_WR) | Termination enabled only during write bursts - reduces standby power and improves signal integrity on bidirectional DQ bus |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS - enables system-level timing calibration without disturbing memory contents |
| Write Leveling Support | Hardware-assisted DQS-to-CK phase alignment procedure - eliminates board-level skew for reliable high-speed write capture |
| Partial Array Self-Refresh (PASR) | Configurable refresh of ¼, ½, or full array - cuts self-refresh current by up to 50% in memory-constrained low-power states |
Applications
| Industrial Networking Switches | Medical Imaging Controllers |
|---|---|
|
Use Scenario: High-throughput packet buffering and table lookups in Layer 3 Ethernet switches operating in factory-floor environments. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A9/A15-based switch fabric controllers, delivering 17.06 GB/s peak bandwidth at DDR3L-2133. Use Value: 1.35 V operation reduces system power by ~15% vs. 1.5 V DDR3 while maintaining full JEDEC timing compliance at 95°C case temperature. |
Use Scenario: Real-time frame buffering and DICOM processing in portable ultrasound and MRI console units. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for FPGA-accelerated image reconstruction pipelines with strict thermal envelope limits. Use Value: PASR and dynamic ODT reduce average IDD6 self-refresh current to 15 mA and minimize write-burst noise, preserving SNR in analog front-end circuits. |
| Automotive ADAS Domain Controllers | Industrial PLC Motion Control Units |
|
Use Scenario: Sensor fusion buffer and neural network inference scratchpad in ISO 26262-compliant ADAS ECUs with ASIL-B requirements. IC Role / Device Role / Timing Role: Safety-relevant memory subsystem supporting ECC-capable controllers; leverages asynchronous RESET# for fail-safe reinitialization. Use Value: Validated 0–95°C operation with guaranteed tREFI = 3.9 µS at 95°C enables robust refresh management without software intervention during thermal transients. |
Use Scenario: Deterministic motion profile storage and real-time I/O mapping in CNC and servo drive controllers with microsecond-level jitter budgets. IC Role / Device Role / Timing Role: Low-jitter memory interface synchronized to deterministic real-time OS scheduler ticks via precise CK/CK# differential routing. Use Value: DLL-on mode with programmable AL (0, CL−1, CL−2) enables posted CAS optimization, reducing command bus contention and improving worst-case latency predictability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | 2Gb DDR3L, 1.25 ns tCK min (DDR3L-1600), VFBGA-78, CL=11/CWL=7 - slower max speed, tighter tCK tolerance | Targeted at cost-sensitive industrial controllers where 1600 MT/s suffices and extended 95°C operation is not required | Select when design prioritizes Micron's long-term supply assurance and does not require DDR3L-2133 bandwidth |
| IS43TR16256B-125KBL | 2Gb DDR3L, 1.25 ns tCK min (DDR3L-1600), FBGA-96, CL=11/CWL=7 - larger 96-ball package, no PASR or write leveling support | Suitable for legacy PCBs designed for 96-ball DDR3 footprints; lacks advanced calibration features needed for >1600 MT/s designs | Choose only for drop-in replacement on existing 96-ball layouts; avoid for new DDR3L-2133 designs due to missing features |
Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GU8NB-09 TR delivers higher bandwidth (2133 vs. 1600 MT/s), industrial-temperature support up to 95°C with validated tREFI scaling, and hardware write leveling - making it optimal for new designs demanding performance, thermal resilience, and signal integrity at the DDR3L limit.
Availability
W632GU8NB-09 TR is available at Aetrix Electronics and suitable for industrial networking switches, medical imaging controllers, automotive ADAS domain controllers, and PLC motion control units requiring stable component supply, long-lifecycle support, and guaranteed 0–95°C operation.
Supply support for W632GU8NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM products for industrial, automotive, and communications markets.
The W632GU8NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, engineered for robust operation in thermally demanding embedded systems where reliability, JEDEC compliance, and low-voltage efficiency are critical.
FAQ
What is the maximum data rate supported by the W632GU8NB-09 TR?
The W632GU8NB-09 TR supports DDR3L-2133 operation with a maximum data rate of 2133 MT/s, corresponding to a 1066 MHz clock frequency (tCK = 0.938 ns minimum). This speed grade is validated under 1.283–1.45 V VDD/VDDQ and 0–95°C case temperature with CL=14 and tRCD/tRP=14 cycles.
Does the W632GU8NB-09 TR support both DDR3L and standard DDR3 voltage levels?
Yes, the W632GU8NB-09 TR is backward-compatible with 1.5 V DDR3 systems. It operates natively at 1.35 V (DDR3L) but accepts VDD/VDDQ = 1.5 V ± 0.075 V per JEDEC specification. Voltage switching between modes requires controlled sequencing per Section 12.4 of the datasheet to avoid latch-up.
How does the W632GU8NB-09 TR handle refresh at elevated temperatures?
At TCASE > 85°C, the W632GU8NB-09 TR mandates doubling the refresh rate to tREFI = 3.9 µS (vs. 7.8 µS at ≤85°C). This is achieved either via Auto Self-Refresh (ASR) with MR2[7:6] = 10b or manual entry into Self-Refresh mode - both methods ensure data retention without host intervention.
What termination options are available on the W632GU8NB-09 TR data bus?
The W632GU8NB-09 TR provides programmable on-die termination (ODT) on DQ, DQS/DQS#, and DM lines via MR1 and MR2. It supports synchronous ODT (Rtt_NOM), dynamic ODT (Rtt_WR), and asynchronous ODT modes, with selectable impedances of 120 Ω, 60 Ω, 40 Ω, and 30 Ω depending on RTT setting and ODT activation timing.
Is write leveling supported on the W632GU8NB-09 TR, and how is it implemented?
Yes, the W632GU8NB-09 TR fully supports hardware-assisted write leveling per JEDEC DDR3L spec. The controller issues a write leveling command, and the DRAM returns a phase-shifted DQS pulse; the controller adjusts DQS delay until edge alignment with CK is achieved - a process documented in Section 9.9 of the datasheet.
W632GU8NB-09 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8NB-09 TR FAQ
1.How can I place an order for W632GU8NB-09 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8NB-09 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8NB-09 TR reliable?
The price and inventory of W632GU8NB-09 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB-09 TR is usually 5 days.
3.What payment methods are accepted for W632GU8NB-09 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB-09 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8NB-09 TR?
W632GU8NB-09 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8NB-09 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8NB-09 TR?
For technical support, including W632GU8NB-09 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB-09 TR requirements.
6.How does Aetrix verify that W632GU8NB-09 TR is sourced from the original manufacturer or authorized distributors?
All W632GU8NB-09 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB-09 TR meets industry standards.
7.What is the process for return or replacement of W632GU8NB-09 TR?
All W632GU8NB-09 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB-09 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8NB-09 TR part is unused and in its original packaging.
Return procedure for W632GU8NB-09 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8NB-09 TR Tags
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