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Winbond Electronics Corporation W632GU8NB11I
- Part No.:
- W632GU8NB11I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8NB11I.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,240
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Product details
Overview
W632GU8NB11I from Winbond is a 2 Gbit (256 M × 8) DDR3L SDRAM organized in 8 banks, operating at 1.35 V nominal supply with DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), supporting -40°C to +95°C industrial temperature range. It delivers 1866 MT/s data rates using differential CK/CK# and DQS/DQS# signaling, with programmable CAS latency (CL = 5–11), CWL (5–9), and on-die termination for high-speed memory subsystems in networking and embedded controllers.
For engineers reviewing the W632GU8NB11I datasheet, W632GU8NB11I pinout, W632GU8NB11I application, or W632GU8NB11I equivalent, this device requires attention to ZQ calibration timing, write leveling sequence, DLL-on/off switching constraints, and industrial-grade thermal derating of tREFI at 95°C case temperature.
Technical Context
The W632GU8NB11I implements a double-data-rate architecture with 8-bit prefetch, synchronous command decoding on rising CK edge, and source-synchronous I/O referenced to DQS/DQS#. Its internal 8-bank structure enables concurrent row activation and interleaved burst access to sustain bandwidth under multi-threaded workloads.
It supports asynchronous RESET# for power-up initialization and mode register programming (MR0–MR3) for CAS latency, additive latency, ODT configuration, PASR, ASR, and dynamic ODT (Rtt_WR). Write leveling and Multi-Purpose Register (MPR) enable system-level timing calibration without external test equipment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gbit (256 M words × 8 bits), 8-bank organization |
| Data Rate | 1866 MT/s (DDR3L-1866, 933 MHz clock) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 75 mV |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11 (JEDEC-compliant 13-13-13 timing) |
| CAS Write Latency | Programmable CWL = 5–9, matched to operating frequency (CWL = 7 at 933 MHz) |
| Operating Temperature | -40°C ≤ TCASE ≤ 95°C (industrial grade, full AC/DC specs) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate required) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and ball pitch of 0.8 mm. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, CK/CK#, DQS/DQS#, DM, and address/command banks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address during ACT, READ, WRITE, PRE; multiplexed with MRS commands |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for command targeting |
| CK / CK# | Differential Clock | Edge-triggered command latching; defines tCK period and all timing parameters |
| CS# | Chip Select | Active-low enables command decoding; high disables all internal operations |
| RAS#, CAS#, WE# | Command Control | Encoded with BA and A inputs to generate ACT, READ, WRITE, PRE, REF, MRS |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; synchronized to DQS/DQS# edges during reads/writes |
| DQS / DQS# | Differential Strobe | Source-synchronous strobe: center-aligned for writes, edge-aligned for reads |
| DM | Data Mask | Per-byte mask for WRITE bursts; sampled on DQS rising edge |
| RESET# | Asynchronous Reset | Forces power-up initialization sequence and clears internal state unconditionally |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1% external resistor to ground for output driver and ODT calibration |
Key Features
| Feature | Design Value |
|---|---|
| Programmable On-Die Termination (ODT) | Configurable RTT_NOM (60/120/40 Ω) and RTT_WR (60/120/40 Ω) via MR1/MR2 for signal integrity optimization per operation |
| Write Leveling Support | Enables controller-driven DQS-to-CK skew calibration during initialization, critical for reliable 1866 MT/s timing closure |
| Multi-Purpose Register (MPR) | Provides predefined read pattern for system-level timing margin validation without external test fixtures |
| Dynamic ODT (Rtt_WR) | Switches ODT impedance on-the-fly during WRITE bursts only, reducing stub reflections while minimizing standby power |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, extending battery life in portable applications |
| Auto Self-Refresh (ASR) | Automatically adjusts tREFI based on temperature sensor output, eliminating host software intervention across -40°C to +95°C range |
Applications
| Industrial PLC Controllers | Network Switch Buffer Memory |
|---|---|
Use Scenario: Real-time deterministic control logic execution with dual-core ARM Cortex-A9 processors requiring low-latency, high-bandwidth memory access. IC Role / Device Role / Timing Role: Primary system memory providing 1866 MT/s burst throughput and sub-14 ns tRCD for instruction/data fetch under interrupt-driven workloads. Use Value: Industrial temperature rating (-40°C to +95°C) ensures uninterrupted operation in cabinet-mounted automation hardware without forced cooling. |
Use Scenario: Packet buffering in Layer 2/3 Ethernet switches handling 10 GbE line-rate traffic with deep packet inspection and QoS queuing. IC Role / Device Role / Timing Role: Shared buffer memory supporting concurrent read-modify-write cycles across multiple traffic classes with bank interleaving. Use Value: Programmable ODT and write leveling enable stable 1866 MT/s operation on dense 10-layer PCBs with >8-inch trace lengths. |
| Medical Imaging Front-End | Automotive ADAS Domain Controller |
Use Scenario: High-resolution ultrasound beamforming where raw ADC samples are streamed into memory at >1.2 GB/s before GPU-based reconstruction. IC Role / Device Role / Timing Role: Burst-capable frame buffer with BL8 and BC4 modes, supporting variable-length transfers aligned to pixel rows. Use Value: 1.35 V DDR3L operation reduces power delivery complexity and heat generation near sensitive analog front-end circuitry. |
Use Scenario: Sensor fusion processing in autonomous driving ECUs combining radar, camera, and LiDAR data streams with real-time OS scheduling. IC Role / Device Role / Timing Role: System memory with ASR and PASR enabling extended low-power sleep states while preserving context during vehicle ignition-off periods. Use Value: ZQ calibration and dynamic ODT maintain signal integrity across wide automotive temperature swings (-40°C to +105°C ambient, +95°C case). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8RH-125:E (Micron) | Same 2 Gbit × 8 density, VFBGA-78, DDR3L-1866; supports CL = 11 but lacks PASR and ASR features | Requires external temperature monitoring for refresh rate adjustment above 85°C | Preferred when legacy Micron ecosystem compatibility is required and PASR/ASR not needed |
| IS43TR16256B-125KBL (ISSI) | 16-bit bus width (x16), different pinout; supports same CL/CWL range and industrial temp but uses 96-ball FBGA | Not pin-compatible; requires PCB redesign and wider data path utilization | Consider only if higher per-cycle bandwidth (16-bit vs 8-bit) justifies layout change and cost premium |
Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GU8NB11I provides integrated thermal-aware refresh (ASR) and partial-array retention (PASR) within the standard 8-bit DDR3L-1866 footprint - delivering lower system power and simpler thermal management without sacrificing JEDEC compliance or industrial reliability.
Availability
W632GU8NB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU8NB11I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with industrial-grade reliability and advanced power management features.
FAQ
What is the maximum operating frequency supported by W632GU8NB11I?
The W632GU8NB11I supports DDR3L-1866 operation at 933 MHz clock frequency (1866 MT/s data rate), with tCK(AVG) = 1.07 ns minimum and CL-tRCD-tRP = 13-13-13 timing. This speed grade is validated across the full -40°C to +95°C industrial temperature range per JEDEC specification JESD79-3F.
Does W632GU8NB11I support both 1.35 V and 1.5 V operation?
Yes, W632GU8NB11I is fully backward-compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ± 75 mV) while maintaining DDR3L-1866 performance. However, 1.35 V nominal operation reduces power consumption by ~15% and is required to meet industrial temperature specifications at +95°C case temperature.
How does the ZQ calibration function work on W632GU8NB11I?
The W632GU8NB11I uses its ZQ pin to connect to a 240 Ω ±1% external resistor to ground. During ZQCAL command execution, the device calibrates internal output driver strength and ODT impedances to match process, voltage, and temperature variations - ensuring consistent signal integrity across 1866 MT/s operation without manual tuning.
What is the purpose of the Multi-Purpose Register (MPR) in W632GU8NB11I?
The MPR in W632GU8NB11I outputs a fixed 128-bit pattern (0x00000000FFFFFFFF) on DQ pins during MRS-read sequences. This enables system-level timing margin testing - such as setup/hold window validation - without requiring external test equipment or modifying user data patterns during production bring-up.
Is W632GU8NB11I pin-compatible with other Winbond DDR3L SDRAMs like W632GU8NB-11?
Yes, W632GU8NB11I shares identical VFBGA-78 pinout, ball assignment, and electrical interface with W632GU8NB-11 and all other W632GU8NB speed grades. The only differences are extended temperature qualification (-40°C to +95°C vs 0°C to +95°C) and guaranteed AC parameter compliance across the full industrial range.
W632GU8NB11I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8NB11I FAQ
1.How can I place an order for W632GU8NB11I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8NB11I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8NB11I reliable?
The price and inventory of W632GU8NB11I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB11I is usually 5 days.
3.What payment methods are accepted for W632GU8NB11I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB11I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8NB11I?
W632GU8NB11I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8NB11I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8NB11I?
For technical support, including W632GU8NB11I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB11I requirements.
6.How does Aetrix verify that W632GU8NB11I is sourced from the original manufacturer or authorized distributors?
All W632GU8NB11I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB11I meets industry standards.
7.What is the process for return or replacement of W632GU8NB11I?
All W632GU8NB11I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB11I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8NB11I part is unused and in its original packaging.
Return procedure for W632GU8NB11I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8NB11I Tags
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