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Winbond Electronics Corporation W632GU8NB11I TR

Part No.:
W632GU8NB11I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW632GU8NB11I TR.pdf
Description:
IC DRAM 2GBIT PAR 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,927

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Product details

Overview

W632GU8NB11I TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in VFBGA-78 package, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), 8 internal banks, and 8-bit prefetch architecture. It serves as main memory in embedded controllers, network processors, and industrial HMIs requiring low-voltage, high-bandwidth data buffering.

For engineers reviewing the W632GU8NB11I TR datasheet, W632GU8NB11I TR pinout, W632GU8NB11I TR application, or W632GU8NB11I TR equivalent, key selection factors include its DDR3L-1866 timing compliance, programmable CAS Write Latency (CWL = 5–9), on-die termination (ODT) support for both static and dynamic modes, ZQ calibration capability, and industrial-grade thermal reliability up to +95°C case temperature.

Technical Context

This DDR3L SDRAM implements a double-data-rate interface synchronized to differential CK/CK# clocks, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to CK, enabling stable 1866 MT/s operation under JEDEC-compliant timing constraints.

The device supports asynchronous RESET#, programmable mode registers (MR0–MR3) for CAS latency, CWL, ODT, PASR, ASR, and write leveling, plus Multi-Purpose Register (MPR) for system-level timing calibration. It features 1K-byte page size, auto-precharge, and dual power-down modes (precharged and active) for dynamic power management.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Gb (256M words × 8 bits), organized as 32M × 8 banks × 8 bits
Data Rate 1866 MT/s (DDR3L-1866), tCK = 1.07 ns min (CL13/CWL9)
Supply Voltage VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward compatible to 1.5 V ±0.075 V
Operating Temperature –40°C ≤ TCASE ≤ +95°C (industrial grade, verified per JESD22-A104)
CAS Latency (CL) Programmable CL = 5, 6, 7, 8, 9, 10, 11, 13, 14; CL13 required for DDR3L-1866 (13-13-13)
CAS Write Latency (CWL) Programmable CWL = 5–9; CWL9 used with CL13 for 1866 MT/s operation
Package VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free)
Refresh Interval tREFI = 7.8 µs at 0°C–85°C; 3.9 µs at 85°C–95°C (doubled refresh rate)

Pinout & Package

VFBGA-78 package (8 × 10.5 mm², 1.0 mm thickness, Window BGA Type) with 78 solder balls arranged in 8 rows × 10 columns (2 missing balls at A1/A2), RoHS-compliant and lead-free.

Pin/Terminal Circuit Role Design Meaning
A1–A10, B1–B10, C1–C10, D1–D10, E1–E10, F1–F10, G1–G10, H1–H10 (excluding A1/A2) Address/Command/Data/Strobe/Control Ball mapping includes A0–A14 (row/column address), BA0–BA2 (bank select), CKE, CS#, RAS#, CAS#, WE#, DM0–DM7, DQ0–DQ63, DQS0–DQS7, DQS#0–DQS#7, CK/CK#, VDD, VDDQ, VSS, VSSQ, ZQ, RESET#
RESET# Asynchronous reset input Drives internal power-up initialization sequence and resets mode registers; active-low, sampled asynchronously
ZQ Calibration reference terminal Connects to 240 Ω ±1 % external resistor to ground for output driver and ODT impedance calibration
CK / CK# Differential clock input Latches all command/address inputs at crosspoint; defines timing reference for all DDR operations
DQS / DQS# Differential data strobe pair Source-synchronous strobe for DQ0–DQ63; edge-aligned on read, center-aligned on write; supports write leveling

Key Features

Feature Design Value
Programmable On-Die Termination (ODT) Configurable RTT values (60 Ω, 120 Ω, 40 Ω) for DQ, DM, DQS/DQS#; supports synchronous and dynamic ODT modes
ZQ Calibration One-time or periodic calibration using external 240 Ω resistor to trim output driver and ODT impedances across voltage/temperature
Write Leveling Support Enables controller-to-DRAM timing alignment by adjusting DQS launch delay; uses MPR read pattern and dedicated command sequence
Multi-Purpose Register (MPR) Predefined 128-bit pattern (0x0000_0000_0000_0000) readable via standard READ command for system timing margin validation
Partial Array Self-Refresh (PASR) Reduces self-refresh current by refreshing only selected banks (1/2/4/8 banks), lowering IDD6 by up to 50 % in partial-use scenarios
Auto Self-Refresh (ASR) & Temp-Sensitive Refresh Automatically doubles refresh rate (tREFI = 3.9 µs) above 85°C; MR2 bit A7 enables extended-temp ASR mode for 95°C operation

Applications

Industrial Human-Machine Interface (HMI) Network Edge Router Buffering

Use Scenario: Touch-enabled panel PC running real-time Linux OS with graphics overlay and protocol stack processing.

IC Role / Device Role / Timing Role: Main system memory providing 1866 MT/s bandwidth for frame buffer, application code, and packet buffering.

Use Value: DDR3L-1866 timing (13-13-13) and industrial –40°C to +95°C rating ensure deterministic response and thermal stability in uncontrolled factory environments.

Use Scenario: Layer-3 switch ASIC requiring burst-mode packet buffering with minimal latency jitter during traffic surges.

IC Role / Device Role / Timing Role: High-speed packet buffer interfacing directly to switch fabric controller via DDR3L PHY.

Use Value: Programmable CWL and write leveling enable precise DQS-to-DQ timing closure; dynamic ODT improves signal integrity during back-to-back writes.

Medical Imaging Control Unit Automated Test Equipment (ATE) Memory Subsystem

Use Scenario: Ultrasound front-end controller acquiring and preprocessing real-time echo data before transfer to host CPU.

IC Role / Device Role / Timing Role: Low-voltage (1.35 V) memory subsystem reducing system power and heat generation near sensitive analog circuitry.

Use Value: Backward compatibility to 1.5 V allows reuse of legacy DDR3 designs; ZQ calibration maintains signal fidelity across long-term field deployment.

Use Scenario: Modular ATE platform requiring hot-swappable memory modules with guaranteed timing margin across production test cycles.

IC Role / Device Role / Timing Role: Calibrated memory resource supporting deterministic read/write timing verification via MPR and write leveling sequences.

Use Value: MPR read pattern and write leveling capability allow automated board-level timing validation without external instruments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS43TR16256BL-125KBL 16-bit bus width (vs. 8-bit), 2Gb density, DDR3L-1600 (11-11-11), same VFBGA-96 package but incompatible pinout Requires PCB redesign due to 16-bit interface and different ball map; suited for higher-throughput systems with wider data paths Select only if 16-bit interface and lower 1600 MT/s speed are acceptable; not drop-in compatible
MT41K128M8RH-125:E Micron 1Gb (128M × 8) DDR3L-1600 (11-11-11), VFBGA-78, industrial temp (–40°C to +95°C), but lower density and slower speed Lower bandwidth and capacity; suitable for cost-sensitive or space-constrained designs where 1866 MT/s is unnecessary Choose when design can tolerate reduced performance and smaller memory footprint; pin-compatible but requires timing revalidation

Compared with IS43TR16256BL-125KBL and MT41K128M8RH-125:E, the W632GU8NB11I TR delivers higher 1866 MT/s throughput and full DDR3L-1866 timing compliance in an 8-bit configuration, making it optimal for bandwidth-constrained industrial controllers needing precise timing control and thermal robustness without bus-width expansion.

Availability

W632GU8NB11I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for W632GU8NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU8NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant timing robustness.

FAQ

What is the maximum data rate supported by the W632GU8NB11I TR?

The W632GU8NB11I TR supports DDR3L-1866 operation at 1866 MT/s, corresponding to a minimum clock period (tCK) of 1.07 ns. This speed grade is validated for CL13/tRCD13/tRP13 timing and requires CWL9. The device achieves this rate using its 8-bit prefetch architecture and DLL-synchronized DQS-to-DQ alignment, ensuring reliable operation within industrial temperature limits.

Does the W632GU8NB11I TR support backward compatibility with standard 1.5V DDR3 systems?

Yes, the W632GU8NB11I TR supports backward compatibility with 1.5V DDR3 systems. Its VDD/VDDQ supply range extends to 1.5V ±0.075V, and all DC and AC timing parameters meet JEDEC DDR3 specifications at that voltage. However, DDR3L-specific features like lower IDD currents and extended temperature operation are only guaranteed at 1.35V nominal.

How does the ZQ calibration function work on the W632GU8NB11I TR?

The W632GU8NB11I TR uses its ZQ pin to connect to a 240 Ω ±1 % external resistor to ground. Upon receiving a ZQCL (ZQ Calibration Long) command, the device performs internal trimming of output driver strength and ODT impedance values across process, voltage, and temperature variations. Calibration must be performed after power-up and periodically during operation to maintain signal integrity.

What is the purpose of the Multi-Purpose Register (MPR) in the W632GU8NB11I TR?

The MPR in the W632GU8NB11I TR stores a fixed 128-bit pattern (0x0000_0000_0000_0000) accessible via standard READ commands. It is used for system-level timing margin validation-controllers read the MPR pattern while sweeping DQS delays to determine optimal write timing windows, enabling robust high-speed link training without external test equipment.

Can the W632GU8NB11I TR operate reliably at +95°C case temperature?

Yes, the W632GU8NB11I TR is rated for –40°C ≤ TCASE ≤ +95°C and fully complies with JEDEC AC/DC specifications across this range. At temperatures above +85°C, it automatically doubles refresh frequency (tREFI = 3.9 µs) and supports Manual Self-Refresh mode (MR2 A6=0, A7=1) to maintain data retention integrity under extended thermal stress conditions.

W632GU8NB11I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
Parallel
Clock Frequency:
933 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W632GU8NB11I TR FAQ

1.How can I place an order for W632GU8NB11I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8NB11I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8NB11I TR reliable?

The price and inventory of W632GU8NB11I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB11I TR is usually 5 days.

3.What payment methods are accepted for W632GU8NB11I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB11I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8NB11I TR?

W632GU8NB11I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8NB11I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8NB11I TR?

For technical support, including W632GU8NB11I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB11I TR requirements.

6.How does Aetrix verify that W632GU8NB11I TR is sourced from the original manufacturer or authorized distributors?

All W632GU8NB11I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB11I TR meets industry standards.

7.What is the process for return or replacement of W632GU8NB11I TR?

All W632GU8NB11I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB11I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8NB11I TR part is unused and in its original packaging.

Return procedure for W632GU8NB11I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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