Winbond Electronics Corporation W632GU8NB-11 TR

Overview

W632GU8NB-11 TR from Winbond is a 2 Gbit (256 M × 8) DDR3L SDRAM organized in 8 banks, supporting DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), 1.35 V nominal supply, and industrial temperature range (0°C to 95°C). It delivers 1866 MT/s data rates with programmable CAS latency (CL = 5–11), CWL = 5–9, and on-die termination for high-speed memory subsystems in networking and embedded computing.

For engineers reviewing the W632GU8NB-11 TR datasheet, W632GU8NB-11 TR pinout, W632GU8NB-11 TR application, or W632GU8NB-11 TR equivalent, key selection criteria include DDR3L-1866 timing compliance, VFBGA-78 package compatibility, ZQ calibration support, asynchronous RESET# functionality, and dual-mode ODT configuration for signal integrity optimization in dense PCB layouts.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with inputs latched at the crosspoint and bidirectional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS-clock timing across process, voltage, and temperature variations.

It supports full JEDEC DDR3L features including programmable mode registers (MR0–MR3), multi-purpose register (MPR) for system-level timing calibration, write leveling, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and auto self-refresh (ASR) with temperature-compensated refresh intervals up to 105°C for extended-grade variants.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and ball pitch of 0.8 mm. Ball layout follows JEDEC-standard DDR3L pin assignment for address/command/data/strobe/termination signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W632GU8NB-11 TR provides native 1.35 V operation with guaranteed DDR3L-1866 timing, VFBGA-78 pinout compatibility, and integrated ZQ calibration-making it optimal for new designs prioritizing power efficiency, JEDEC compliance, and drop-in replacement within existing 8-bit DDR3L footprints.

Availability

W632GU8NB-11 TR is available at Aetrix Electronics and suitable for networking infrastructure, industrial automation, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L performance.

Supply support for W632GU8NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GU8NB-11 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, power-constrained embedded systems requiring JEDEC-compliant high-speed memory with extended temperature reliability and robust signal integrity features.

FAQ

What is the maximum supported CAS latency for W632GU8NB-11 TR at DDR3L-1866 speed?

W632GU8NB-11 TR supports CAS Latency (CL) values of 5, 6, 7, 8, 9, 10, and 11 at DDR3L-1866 speed. CL = 11 corresponds to tRCD = 13.91 ns minimum, aligning with the 13-13-13 timing bin. Higher CL settings (13, 14) are reserved for slower speed grades and are not valid for the -11 suffix variant.

Does W632GU8NB-11 TR require an external ZQ reference resistor, and what value is specified?

Yes, W632GU8NB-11 TR requires an external 240 Ω ±1% resistor connected between the ZQ pin and ground for factory and runtime calibration of output driver strength and on-die termination impedances. This ensures ±5% impedance accuracy across voltage and temperature for reliable signal integrity at 1866 MT/s.

Can W632GU8NB-11 TR operate at 1.5 V, and what are the implications?

W632GU8NB-11 TR is backward compatible with 1.5 V VDD/VDDQ operation per JEDEC DDR3 standards. However, at 1.5 V, it retains DDR3L-1866 timing specifications only if all AC parameters-including tAA, tRCD, and tRP-are verified under 1.5 V conditions. Full DDR3L certification applies strictly at 1.35 V nominal.

How does the RESET# pin function in W632GU8NB-11 TR, and is it mandatory for initialization?

The RESET# pin in W632GU8NB-11 TR provides asynchronous hardware reset and initiates power-up initialization sequence. It is mandatory for reliable startup: asserting RESET# low for ≥200 ns after VDD/VDDQ stabilization triggers internal state machine reset and mode register clearing, ensuring deterministic configuration before first command.

What package type and ball count does W632GU8NB-11 TR use, and is it RoHS compliant?

W632GU8NB-11 TR uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm height and 0.8 mm ball pitch. It is manufactured with lead-free materials and fully complies with RoHS Directive 2011/65/EU, confirmed in the device's package specification section and revision history.