Winbond Electronics Corporation W632GU8NB-12

Overview

W632GU8NB-12 from Winbond is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 800 MHz (DDR3L-1600, CL=11), with 1.35 V nominal supply, 8 internal banks, and 8-bit prefetch architecture. It delivers high-bandwidth memory for embedded controllers, industrial HMIs, and network edge devices requiring low-voltage operation and JEDEC-compliant timing.

For engineers reviewing the W632GU8NB-12 datasheet, W632GU8NB-12 pinout, W632GU8NB-12 application, or W632GU8NB-12 equivalent, this page provides verified speed bin parameters (11-11-11), ODT configuration options, ZQ calibration support, write leveling capability, and thermal grade validation for 0°C to 95°C case temperature operation.

Technical Context

This DDR3L SDRAM implements source-synchronous I/O using differential DQS/DQS# strobes aligned to CK/CK#, with DLL-based clock-data alignment and programmable additive latency (AL = 0, CL−1, CL−2). It supports posted CAS, auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

The device integrates on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration for output driver and ODT impedance tuning, and multi-purpose register (MPR) readout for system-level timing calibration. Its asynchronous RESET# pin enables deterministic power-up initialization and runtime reset independent of clock state.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free), ball pitch 0.8 mm, window BGA type.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, the W632GU8NB-12 offers native x8 interface, validated 0–95°C operation without derating, and simplified ZQ calibration using standard 240 Ω resistor-making it optimal for cost-sensitive industrial and networking applications where pinout fidelity and thermal margin are critical.

Availability

W632GU8NB-12 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging systems, and automated test equipment requiring stable component supply, long-term lifecycle support, and guaranteed JEDEC DDR3L-1600 compliance.

Supply support for W632GU8NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W632GU8NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained embedded systems needing JEDEC-compliant low-voltage memory with robust thermal performance and system-level calibration features.

FAQ

What is the maximum operating frequency and CAS latency supported by the W632GU8NB-12?

The W632GU8NB-12 is rated for DDR3L-1600 operation at 800 MHz with tCK = 1.25 ns minimum. Its supported CAS latency values include CL = 5, 6, 7, 8, 9, 10, and 11, with CL = 11 being the default setting for full-speed operation. The device also supports programmable additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency in high-throughput systems.

Does the W632GU8NB-12 support both 1.35 V and 1.5 V operation?

Yes, the W632GU8NB-12 supports dual-voltage operation: it is fully compliant with DDR3L specifications at 1.35 V (VDD/VDDQ = 1.283 V to 1.45 V) and backward compatible with standard DDR3 at 1.5 V (±0.075 V). Voltage switching between modes is supported via mode register MR1, and both configurations maintain full AC/DC parameter compliance per JEDEC JESD79-3F.

How does write leveling function in the W632GU8NB-12, and why is it required?

Write leveling in the W632GU8NB-12 compensates for flight-time skew between CK and DQS signals across all 8 byte lanes. It operates by toggling DQS while monitoring DQ feedback to determine optimal DQS delay taps. This calibration is mandatory before high-speed writes at 1600 MT/s to ensure setup/hold timing margins are met-especially critical in systems with asymmetric trace routing or multiple memory devices.

What package type and ball count does the W632GU8NB-12 use?

The W632GU8NB-12 uses a VFBGA-78 package: 8 mm × 10.5 mm footprint, 1.0 mm thickness, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. It contains 78 solder balls arranged in a window BGA layout optimized for thermal dissipation and signal integrity in high-density PCB designs.

Can the W632GU8NB-12 operate in self-refresh mode at 95°C case temperature?

Yes, the W632GU8NB-12 is qualified for self-refresh operation across its full rated temperature range of 0°C ≤ TCASE ≤ 95°C. At 95°C, the device doubles refresh rate (tREFI = 3.9 µS) and maintains IDD6 ≤ 15 mA. This behavior is enabled automatically when MR2[7:6] = 10b (Auto Self-Refresh with Extended Temp Range), ensuring data retention without host intervention.